JP4951865B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4951865B2
JP4951865B2 JP2005057873A JP2005057873A JP4951865B2 JP 4951865 B2 JP4951865 B2 JP 4951865B2 JP 2005057873 A JP2005057873 A JP 2005057873A JP 2005057873 A JP2005057873 A JP 2005057873A JP 4951865 B2 JP4951865 B2 JP 4951865B2
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JP
Japan
Prior art keywords
electrode
layer
light emitting
semiconductor layer
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005057873A
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English (en)
Japanese (ja)
Other versions
JP2006245230A5 (enExample
JP2006245230A (ja
Inventor
雅彦 佐野
良司 谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2005057873A priority Critical patent/JP4951865B2/ja
Publication of JP2006245230A publication Critical patent/JP2006245230A/ja
Publication of JP2006245230A5 publication Critical patent/JP2006245230A5/ja
Application granted granted Critical
Publication of JP4951865B2 publication Critical patent/JP4951865B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2005057873A 2005-03-02 2005-03-02 半導体発光素子 Expired - Fee Related JP4951865B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005057873A JP4951865B2 (ja) 2005-03-02 2005-03-02 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005057873A JP4951865B2 (ja) 2005-03-02 2005-03-02 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2006245230A JP2006245230A (ja) 2006-09-14
JP2006245230A5 JP2006245230A5 (enExample) 2008-03-27
JP4951865B2 true JP4951865B2 (ja) 2012-06-13

Family

ID=37051342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005057873A Expired - Fee Related JP4951865B2 (ja) 2005-03-02 2005-03-02 半導体発光素子

Country Status (1)

Country Link
JP (1) JP4951865B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5056082B2 (ja) 2006-04-17 2012-10-24 日亜化学工業株式会社 半導体発光素子
JP2008140841A (ja) * 2006-11-30 2008-06-19 Matsushita Electric Ind Co Ltd 発光素子
JP4782022B2 (ja) * 2007-01-09 2011-09-28 株式会社豊田中央研究所 電極の形成方法
JP5139005B2 (ja) * 2007-08-22 2013-02-06 株式会社東芝 半導体発光素子及び半導体発光装置
DE102008024327A1 (de) * 2008-05-20 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer reflektierenden Schicht
JP5563031B2 (ja) * 2012-08-24 2014-07-30 株式会社東芝 半導体発光素子及び半導体発光装置
JP5590258B2 (ja) 2013-01-23 2014-09-17 三菱マテリアル株式会社 Ａｇ合金膜形成用スパッタリングターゲットおよびＡｇ合金膜、Ａｇ合金反射膜、Ａｇ合金導電膜、Ａｇ合金半透過膜
JP6159130B2 (ja) * 2013-04-12 2017-07-05 スタンレー電気株式会社 半導体発光素子
JP2015056647A (ja) 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
JP5850077B2 (ja) 2014-04-09 2016-02-03 三菱マテリアル株式会社 Ａｇ合金膜及びＡｇ合金膜形成用スパッタリングターゲット
KR102501181B1 (ko) * 2016-06-14 2023-02-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
JP2019143242A (ja) 2018-02-20 2019-08-29 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金スパッタリングターゲットの製造方法
JP7333585B2 (ja) * 2019-07-02 2023-08-25 国立研究開発法人物質・材料研究機構 マグネシウム、スズ、窒素からなる化合物を含む半導体材料及びそれを用いた顔料
CN113410346B (zh) * 2021-07-30 2023-03-21 山西中科潞安紫外光电科技有限公司 一种倒装结构深紫外led芯片及其制备方法
CN113659050B (zh) * 2021-08-17 2023-07-04 天津三安光电有限公司 一种发光二极管及其制备方法
CN113707628A (zh) * 2021-08-30 2021-11-26 乐山无线电股份有限公司 一种防止银迁移的平面二极管芯片
CN115472720B (zh) * 2022-10-31 2023-03-24 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
WO2025182842A1 (ja) * 2024-02-27 2025-09-04 ヌヴォトンテクノロジージャパン株式会社 半導体発光素子、及び、半導体発光素子の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916011B2 (ja) * 1997-02-21 2007-05-16 シャープ株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP3912845B2 (ja) * 1997-04-24 2007-05-09 シャープ株式会社 窒化ガリウム系化合物半導体発光ダイオード及びその製造方法
JP3130292B2 (ja) * 1997-10-14 2001-01-31 松下電子工業株式会社 半導体発光装置及びその製造方法
JP4118370B2 (ja) * 1997-12-15 2008-07-16 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 反射ｐ電極を有する窒化物半導体発光装置およびその製造方法ならびに半導体光電子装置
JPH11220171A (ja) * 1998-02-02 1999-08-10 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体素子
JP2000174339A (ja) * 1998-12-04 2000-06-23 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子およびＧａＮ系半導体受光素子
JP2003168823A (ja) * 2001-09-18 2003-06-13 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2003243705A (ja) * 2002-02-07 2003-08-29 Lumileds Lighting Us Llc 発光半導体の方法及び装置

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