JP4948354B2 - p−ドープされかつエピタキシャル被覆された、シリコンからなる半導体ウェハの製造方法 - Google Patents
p−ドープされかつエピタキシャル被覆された、シリコンからなる半導体ウェハの製造方法 Download PDFInfo
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- JP4948354B2 JP4948354B2 JP2007271686A JP2007271686A JP4948354B2 JP 4948354 B2 JP4948354 B2 JP 4948354B2 JP 2007271686 A JP2007271686 A JP 2007271686A JP 2007271686 A JP2007271686 A JP 2007271686A JP 4948354 B2 JP4948354 B2 JP 4948354B2
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- concentration
- doped
- single crystal
- nitrogen
- semiconductor wafer
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- 239000004065 semiconductor Substances 0.000 title claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 17
- 229910052710 silicon Inorganic materials 0.000 title claims description 17
- 239000010703 silicon Substances 0.000 title claims description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 88
- 229910052757 nitrogen Inorganic materials 0.000 claims description 45
- 229910052760 oxygen Inorganic materials 0.000 claims description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 35
- 239000001301 oxygen Substances 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 description 45
- 235000012431 wafers Nutrition 0.000 description 39
- 238000005259 measurement Methods 0.000 description 14
- 239000002244 precipitate Substances 0.000 description 12
- 230000006911 nucleation Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010899 nucleation Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 150000002829 nitrogen Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
CN = 2715×1014×exp(−0.91×1017×CO)
かつ下限濃度は次の式により計算される
CN = 235×1014×exp(−0.91×1017×CO)
前記式中、CO及びCNは[1/cm3]のディメンションを有する。
Claims (3)
- チョクラルスキー法を用いて、0.2〜2.5mbarの水素分圧でシリコン単結晶を引き上げ、
前記単結晶の引き上げの間に、前記単結晶をホウ素、水素及び窒素でドーピングし、
酸素濃度COに従って単結晶中の窒素の濃度を
上限濃度と下限濃度とにより限定される領域内にあるように制御し、
前記上限濃度は次の式により計算され
C N = 2715×10 14 ×exp(−0.91×10 -17 ×C O )
かつ下限濃度は次の式により計算され
C N = 235×10 14 ×exp(−0.91×10 -17 ×C O )
前記式中、C O 及びC N は[1/cm 3 ]のディメンションを有し、かつ、
前記窒素濃度は、1×10 14 cm -3 より大きな値でかつ1×10 15 cm -3 より低い値に調整され、
前記単結晶を加工して、p-ドープされた半導体ウェハを形成させ、
及び前記半導体ウェハをエピタキシャル被覆すること
を有する、p-ドープされかつエピタキシャル被覆された、シリコンからなる半導体ウェハの製造方法。 - 単結晶引き上げの間に前記単結晶中への酸素の包含を制御して低下させる、請求項1記載の方法。
- p/p-ドープされたエピウェハを作成する、請求項1又は2記載方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006049231 | 2006-10-18 | ||
DE102006049231.5 | 2006-10-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008100906A JP2008100906A (ja) | 2008-05-01 |
JP4948354B2 true JP4948354B2 (ja) | 2012-06-06 |
Family
ID=39318449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007271686A Active JP4948354B2 (ja) | 2006-10-18 | 2007-10-18 | p−ドープされかつエピタキシャル被覆された、シリコンからなる半導体ウェハの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7470323B2 (ja) |
JP (1) | JP4948354B2 (ja) |
KR (1) | KR100930022B1 (ja) |
CN (1) | CN101187056B (ja) |
SG (1) | SG142208A1 (ja) |
TW (1) | TWI360591B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008046617B4 (de) * | 2008-09-10 | 2016-02-04 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung |
EP2309038B1 (en) * | 2009-10-08 | 2013-01-02 | Siltronic AG | production method of an epitaxial wafer |
DE102010034002B4 (de) * | 2010-08-11 | 2013-02-21 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
US11111602B2 (en) * | 2014-07-31 | 2021-09-07 | Globalwafers Co., Ltd. | Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size |
DE102015226399A1 (de) | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
DE102017213587A1 (de) * | 2017-08-04 | 2019-02-07 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209055A (ja) | 1997-01-24 | 1998-08-07 | Mitsubishi Materials Shilicon Corp | 薄膜エピタキシャルウェ−ハおよびその製造方法 |
EP0959154B1 (en) | 1998-05-22 | 2010-04-21 | Shin-Etsu Handotai Co., Ltd | A method for producing an epitaxial silicon single crystal wafer and the epitaxial single crystal wafer |
JP3988307B2 (ja) | 1999-03-26 | 2007-10-10 | 株式会社Sumco | シリコン単結晶、シリコンウェーハ及びエピタキシャルウェーハ |
KR100788988B1 (ko) | 1999-10-15 | 2007-12-28 | 신에쯔 한도타이 가부시키가이샤 | 에피텍셜 웨이퍼용 실리콘 단결정 웨이퍼, 에피텍셜웨이퍼 및 이들의 제조방법 그리고 평가방법 |
KR100347141B1 (ko) * | 2000-01-05 | 2002-08-03 | 주식회사 하이닉스반도체 | 에피택셜 실리콘 웨이퍼 제조 방법 |
DE10014650A1 (de) | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
JP2003002786A (ja) * | 2001-06-25 | 2003-01-08 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板、エピタキシャルウエーハおよびこれらの製造方法 |
JP4570317B2 (ja) * | 2002-08-29 | 2010-10-27 | 株式会社Sumco | シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法 |
US7704318B2 (en) | 2003-02-25 | 2010-04-27 | Sumco Corporation | Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate |
US20060225639A1 (en) | 2005-04-08 | 2006-10-12 | Toshiaki Ono | Method for growing silicon single crystal, and silicon wafer |
US7435294B2 (en) | 2005-04-08 | 2008-10-14 | Sumco Corporation | Method for manufacturing silicon single crystal, and silicon wafer |
JP2007022865A (ja) * | 2005-07-19 | 2007-02-01 | Sumco Corp | シリコン単結晶の製造方法 |
-
2007
- 2007-07-13 SG SG200705208-7A patent/SG142208A1/en unknown
- 2007-08-30 KR KR1020070087771A patent/KR100930022B1/ko active IP Right Grant
- 2007-09-18 CN CN200710152826XA patent/CN101187056B/zh active Active
- 2007-10-11 US US11/870,565 patent/US7470323B2/en active Active
- 2007-10-16 TW TW096138635A patent/TWI360591B/zh active
- 2007-10-18 JP JP2007271686A patent/JP4948354B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008100906A (ja) | 2008-05-01 |
TW200819561A (en) | 2008-05-01 |
TWI360591B (en) | 2012-03-21 |
SG142208A1 (en) | 2008-05-28 |
US20080096371A1 (en) | 2008-04-24 |
KR100930022B1 (ko) | 2009-12-07 |
CN101187056A (zh) | 2008-05-28 |
KR20080035447A (ko) | 2008-04-23 |
US7470323B2 (en) | 2008-12-30 |
CN101187056B (zh) | 2011-11-16 |
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