SG142208A1 - Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon - Google Patents
Process for producing p»-doped and epitaxially coated semiconductor wafers from siliconInfo
- Publication number
- SG142208A1 SG142208A1 SG200705208-7A SG2007052087A SG142208A1 SG 142208 A1 SG142208 A1 SG 142208A1 SG 2007052087 A SG2007052087 A SG 2007052087A SG 142208 A1 SG142208 A1 SG 142208A1
- Authority
- SG
- Singapore
- Prior art keywords
- doped
- silicon
- semiconductor wafers
- producing
- epitaxially coated
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 235000012431 wafers Nutrition 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006049231 | 2006-10-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG142208A1 true SG142208A1 (en) | 2008-05-28 |
Family
ID=39318449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200705208-7A SG142208A1 (en) | 2006-10-18 | 2007-07-13 | Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7470323B2 (ja) |
| JP (1) | JP4948354B2 (ja) |
| KR (1) | KR100930022B1 (ja) |
| CN (1) | CN101187056B (ja) |
| SG (1) | SG142208A1 (ja) |
| TW (1) | TWI360591B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008046617B4 (de) * | 2008-09-10 | 2016-02-04 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung |
| EP2309038B1 (en) * | 2009-10-08 | 2013-01-02 | Siltronic AG | production method of an epitaxial wafer |
| DE102010034002B4 (de) * | 2010-08-11 | 2013-02-21 | Siltronic Ag | Siliciumscheibe und Verfahren zu deren Herstellung |
| KR102384041B1 (ko) | 2014-07-31 | 2022-04-08 | 글로벌웨이퍼스 씨오., 엘티디. | 질소 도핑 및 공공 지배 실리콘 잉곳 및 그로부터 형성된, 반경방향으로 균일하게 분포된 산소 석출 밀도 및 크기를 갖는 열 처리 웨이퍼 |
| DE102015226399A1 (de) * | 2015-12-22 | 2017-06-22 | Siltronic Ag | Siliciumscheibe mit homogener radialer Sauerstoffvariation |
| DE102017213587A1 (de) * | 2017-08-04 | 2019-02-07 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10209055A (ja) | 1997-01-24 | 1998-08-07 | Mitsubishi Materials Shilicon Corp | 薄膜エピタキシャルウェ−ハおよびその製造方法 |
| DE69942263D1 (de) | 1998-05-22 | 2010-06-02 | Shinetsu Handotai Kk | Einkristalline epitaktische Siliciumscheibe und Verfahren zu ihrer Herstellung |
| JP3988307B2 (ja) | 1999-03-26 | 2007-10-10 | 株式会社Ｓｕｍｃｏ | シリコン単結晶、シリコンウェーハ及びエピタキシャルウェーハ |
| WO2001027362A1 (fr) * | 1999-10-15 | 2001-04-19 | Shin-Etsu Handotai Co., Ltd. | Microplaquette epitaxiale, silicium monocristallin a cet effet, procede de production et d'evaluation |
| KR100347141B1 (ko) * | 2000-01-05 | 2002-08-03 | 주식회사 하이닉스반도체 | 에피택셜 실리콘 웨이퍼 제조 방법 |
| DE10014650A1 (de) | 2000-03-24 | 2001-10-04 | Wacker Siltronic Halbleitermat | Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe |
| JP2003002786A (ja) * | 2001-06-25 | 2003-01-08 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板、エピタキシャルウエーハおよびこれらの製造方法 |
| JP4570317B2 (ja) * | 2002-08-29 | 2010-10-27 | 株式会社Ｓｕｍｃｏ | シリコン単結晶とエピタキシャルウェーハ並びにそれらの製造方法 |
| KR100743821B1 (ko) | 2003-02-25 | 2007-07-30 | 가부시키가이샤 섬코 | 실리콘 단결정 육성 방법, 실리콘 웨이퍼 제조 방법 및 ｓｏｉ 기판 제조 방법 |
| US7435294B2 (en) | 2005-04-08 | 2008-10-14 | Sumco Corporation | Method for manufacturing silicon single crystal, and silicon wafer |
| US20060225639A1 (en) | 2005-04-08 | 2006-10-12 | Toshiaki Ono | Method for growing silicon single crystal, and silicon wafer |
| JP2007022865A (ja) * | 2005-07-19 | 2007-02-01 | Sumco Corp | シリコン単結晶の製造方法 |
-
2007
- 2007-07-13 SG SG200705208-7A patent/SG142208A1/en unknown
- 2007-08-30 KR KR1020070087771A patent/KR100930022B1/ko active IP Right Grant
- 2007-09-18 CN CN200710152826XA patent/CN101187056B/zh active Active
- 2007-10-11 US US11/870,565 patent/US7470323B2/en active Active
- 2007-10-16 TW TW096138635A patent/TWI360591B/zh active
- 2007-10-18 JP JP2007271686A patent/JP4948354B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI360591B (en) | 2012-03-21 |
| JP2008100906A (ja) | 2008-05-01 |
| KR100930022B1 (ko) | 2009-12-07 |
| TW200819561A (en) | 2008-05-01 |
| JP4948354B2 (ja) | 2012-06-06 |
| CN101187056A (zh) | 2008-05-28 |
| US20080096371A1 (en) | 2008-04-24 |
| CN101187056B (zh) | 2011-11-16 |
| KR20080035447A (ko) | 2008-04-23 |
| US7470323B2 (en) | 2008-12-30 |
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