JP4947842B2 - 荷電粒子線露光装置 - Google Patents

荷電粒子線露光装置 Download PDF

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Publication number
JP4947842B2
JP4947842B2 JP2001074737A JP2001074737A JP4947842B2 JP 4947842 B2 JP4947842 B2 JP 4947842B2 JP 2001074737 A JP2001074737 A JP 2001074737A JP 2001074737 A JP2001074737 A JP 2001074737A JP 4947842 B2 JP4947842 B2 JP 4947842B2
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Japan
Prior art keywords
charged particle
particle beam
openings
array
optical system
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Expired - Fee Related
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JP2001074737A
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Japanese (ja)
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JP2001345261A (ja
JP2001345261A5 (enExample
Inventor
治人 小野
康弘 島田
隆行 八木
広 前原
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Canon Inc
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Canon Inc
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Priority to JP2001074737A priority Critical patent/JP4947842B2/ja
Priority to US09/819,906 priority patent/US6872952B2/en
Publication of JP2001345261A publication Critical patent/JP2001345261A/ja
Publication of JP2001345261A5 publication Critical patent/JP2001345261A5/ja
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001074737A 2000-03-31 2001-03-15 荷電粒子線露光装置 Expired - Fee Related JP4947842B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2001074737A JP4947842B2 (ja) 2000-03-31 2001-03-15 荷電粒子線露光装置
US09/819,906 US6872952B2 (en) 2000-03-31 2001-03-29 Electron optical system array, method of manufacturing the same, charged-particle beam exposure apparatus, and device manufacturing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000097066 2000-03-31
JP2000097066 2000-03-31
JP2000-97066 2000-03-31
JP2001074737A JP4947842B2 (ja) 2000-03-31 2001-03-15 荷電粒子線露光装置

Publications (3)

Publication Number Publication Date
JP2001345261A JP2001345261A (ja) 2001-12-14
JP2001345261A5 JP2001345261A5 (enExample) 2008-04-17
JP4947842B2 true JP4947842B2 (ja) 2012-06-06

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JP2001074737A Expired - Fee Related JP4947842B2 (ja) 2000-03-31 2001-03-15 荷電粒子線露光装置

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US (1) US6872952B2 (enExample)
JP (1) JP4947842B2 (enExample)

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US20010052576A1 (en) 2001-12-20
JP2001345261A (ja) 2001-12-14
US6872952B2 (en) 2005-03-29

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