JP4945948B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4945948B2 JP4945948B2 JP2005219606A JP2005219606A JP4945948B2 JP 4945948 B2 JP4945948 B2 JP 4945948B2 JP 2005219606 A JP2005219606 A JP 2005219606A JP 2005219606 A JP2005219606 A JP 2005219606A JP 4945948 B2 JP4945948 B2 JP 4945948B2
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- Japan
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- 239000004065 semiconductor Substances 0.000 title claims description 76
- 239000000758 substrate Substances 0.000 claims description 51
- 238000009792 diffusion process Methods 0.000 claims description 49
- 239000002344 surface layer Substances 0.000 claims description 14
- 238000002955 isolation Methods 0.000 description 48
- 230000003071 parasitic effect Effects 0.000 description 12
- 238000006073 displacement reaction Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Description
42 第2導電型の第1領域
43 第2導電型の第2領域
44 第1導電型の第3領域
45 第1電極
46 第2電極
Claims (3)
- 第1導電型の半導体基板と、
前記半導体基板の第1主面側の表面層に選択的に設けられた、回路領域である第2導電型の第1領域と、
前記第1領域から離れて前記半導体基板の第1主面側の表面層に設けられた、前記第1領域よりも低電位を基準とする回路領域である第2導電型の第2領域と、
前記半導体基板の第1主面側の表面層の、前記第1領域と前記第2領域の間に設けられた前記半導体基板よりも高濃度の第1導電型の第3領域と、
前記第3領域に接触する第1電極と、
前記半導体基板の第2主面に接触し、かつ前記第1電極と同電位にされる第2電極と、
を備え、
前記第1領域と前記第2領域との間隔は、第1導電型の前記半導体基板の少数キャリアの拡散長よりも短いことを特徴とする半導体装置。 - 前記第1領域と前記第2領域との間隔は、100μmよりも短いことを特徴とする請求項1に記載の半導体装置。
- 前記第1領域および前記第2領域には、横型の半導体素子により回路が構成されることを特徴とする請求項1または2に記載の半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005219606A JP4945948B2 (ja) | 2005-07-28 | 2005-07-28 | 半導体装置 |
US11/447,758 US7538408B2 (en) | 2005-07-28 | 2006-06-06 | Inhibition of parasitic transistor operation in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005219606A JP4945948B2 (ja) | 2005-07-28 | 2005-07-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007036062A JP2007036062A (ja) | 2007-02-08 |
JP4945948B2 true JP4945948B2 (ja) | 2012-06-06 |
Family
ID=37693353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005219606A Active JP4945948B2 (ja) | 2005-07-28 | 2005-07-28 | 半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7538408B2 (ja) |
JP (1) | JP4945948B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5935296B2 (ja) * | 2011-11-08 | 2016-06-15 | 富士電機株式会社 | 基準電圧回路 |
JP5996969B2 (ja) * | 2012-08-24 | 2016-09-21 | 新電元工業株式会社 | 高耐圧半導体装置 |
CN104221147B (zh) * | 2012-09-13 | 2017-02-22 | 富士电机株式会社 | 半导体集成电路装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0915508A1 (en) * | 1997-10-10 | 1999-05-12 | STMicroelectronics S.r.l. | Integrated circuit with highly efficient junction insulation |
JP2000236067A (ja) | 1999-02-16 | 2000-08-29 | Fuji Electric Co Ltd | 半導体装置 |
JP2001015691A (ja) * | 1999-06-30 | 2001-01-19 | Toshiba Microelectronics Corp | 半導体集積回路 |
JP3951815B2 (ja) * | 2001-06-11 | 2007-08-01 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US6642583B2 (en) * | 2001-06-11 | 2003-11-04 | Fuji Electric Co., Ltd. | CMOS device with trench structure |
JP4569105B2 (ja) * | 2003-12-25 | 2010-10-27 | 富士電機システムズ株式会社 | 半導体装置 |
-
2005
- 2005-07-28 JP JP2005219606A patent/JP4945948B2/ja active Active
-
2006
- 2006-06-06 US US11/447,758 patent/US7538408B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7538408B2 (en) | 2009-05-26 |
US20070023782A1 (en) | 2007-02-01 |
JP2007036062A (ja) | 2007-02-08 |
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