JP4939756B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4939756B2
JP4939756B2 JP2005018020A JP2005018020A JP4939756B2 JP 4939756 B2 JP4939756 B2 JP 4939756B2 JP 2005018020 A JP2005018020 A JP 2005018020A JP 2005018020 A JP2005018020 A JP 2005018020A JP 4939756 B2 JP4939756 B2 JP 4939756B2
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JP
Japan
Prior art keywords
film
wiring pattern
pattern
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005018020A
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English (en)
Japanese (ja)
Other versions
JP2005244203A5 (enExample
JP2005244203A (ja
Inventor
舜平 山崎
博信 小路
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005018020A priority Critical patent/JP4939756B2/ja
Publication of JP2005244203A publication Critical patent/JP2005244203A/ja
Publication of JP2005244203A5 publication Critical patent/JP2005244203A5/ja
Application granted granted Critical
Publication of JP4939756B2 publication Critical patent/JP4939756B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10W72/536—
    • H10W72/5363—
    • H10W72/884—
    • H10W74/00—
    • H10W74/15—
    • H10W90/724—
    • H10W90/734—

Landscapes

  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005018020A 2004-01-26 2005-01-26 半導体装置の作製方法 Expired - Fee Related JP4939756B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005018020A JP4939756B2 (ja) 2004-01-26 2005-01-26 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004017634 2004-01-26
JP2004017652 2004-01-26
JP2004017634 2004-01-26
JP2004017652 2004-01-26
JP2005018020A JP4939756B2 (ja) 2004-01-26 2005-01-26 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005244203A JP2005244203A (ja) 2005-09-08
JP2005244203A5 JP2005244203A5 (enExample) 2008-01-24
JP4939756B2 true JP4939756B2 (ja) 2012-05-30

Family

ID=35025561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005018020A Expired - Fee Related JP4939756B2 (ja) 2004-01-26 2005-01-26 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4939756B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008209797A (ja) * 2007-02-27 2008-09-11 Sumitomo Heavy Ind Ltd レーザ照射装置、及び、露光方法
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP5708191B2 (ja) * 2010-05-19 2015-04-30 セントラル硝子株式会社 保護膜形成用薬液
WO2011155407A1 (ja) * 2010-06-07 2011-12-15 セントラル硝子株式会社 保護膜形成用薬液
US9228120B2 (en) 2010-06-07 2016-01-05 Central Glass Company, Limited Liquid chemical for forming protecting film
JP5716527B2 (ja) * 2010-06-28 2015-05-13 セントラル硝子株式会社 撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
JP5712670B2 (ja) * 2011-02-25 2015-05-07 セントラル硝子株式会社 撥水性保護膜形成薬液
KR20130046431A (ko) * 2010-06-28 2013-05-07 샌트랄 글래스 컴퍼니 리미티드 발수성 보호막 형성제, 발수성 보호막 형성용 약액과 당해 약액을 이용한 웨이퍼의 세정 방법
WO2012002243A1 (ja) * 2010-06-28 2012-01-05 セントラル硝子株式会社 撥水性保護膜形成剤、撥水性保護膜形成用薬液と該薬液を用いたウェハの洗浄方法
KR101396271B1 (ko) * 2010-06-30 2014-05-16 샌트랄 글래스 컴퍼니 리미티드 웨이퍼의 세정방법
WO2012002200A1 (ja) * 2010-06-30 2012-01-05 セントラル硝子株式会社 ウェハの洗浄方法
JP2012033880A (ja) * 2010-06-30 2012-02-16 Central Glass Co Ltd 撥水性保護膜形成用薬液
JP5637212B2 (ja) * 2010-08-27 2014-12-10 東京エレクトロン株式会社 基板処理方法、パターン形成方法、半導体素子の製造方法、および半導体素子
WO2013080900A1 (en) 2011-12-02 2013-06-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6306278B2 (ja) * 2012-04-09 2018-04-04 Jsr株式会社 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3926076B2 (ja) * 1999-12-24 2007-06-06 日本電気株式会社 薄膜パターン形成方法
JP2002313226A (ja) * 2001-04-12 2002-10-25 Fujitsu Ltd 薄型表示装置の電極形成方法および電極材料

Also Published As

Publication number Publication date
JP2005244203A (ja) 2005-09-08

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