JP4936788B2 - プローバ及びプローブ接触方法 - Google Patents

プローバ及びプローブ接触方法 Download PDF

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Publication number
JP4936788B2
JP4936788B2 JP2006136133A JP2006136133A JP4936788B2 JP 4936788 B2 JP4936788 B2 JP 4936788B2 JP 2006136133 A JP2006136133 A JP 2006136133A JP 2006136133 A JP2006136133 A JP 2006136133A JP 4936788 B2 JP4936788 B2 JP 4936788B2
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Japan
Prior art keywords
probe
electrode
relative position
temperature
wafer
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Expired - Fee Related
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JP2006136133A
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English (en)
Japanese (ja)
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JP2007311389A5 (enExample
JP2007311389A (ja
Inventor
太一 藤田
貴浩 伯耆田
哲郎 秦
義之 横山
哲 森山
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Tokyo Seimitsu Co Ltd
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Tokyo Seimitsu Co Ltd
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Application filed by Tokyo Seimitsu Co Ltd filed Critical Tokyo Seimitsu Co Ltd
Priority to JP2006136133A priority Critical patent/JP4936788B2/ja
Priority to US11/744,192 priority patent/US7405584B2/en
Priority to KR1020070047295A priority patent/KR100851419B1/ko
Publication of JP2007311389A publication Critical patent/JP2007311389A/ja
Publication of JP2007311389A5 publication Critical patent/JP2007311389A5/ja
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Publication of JP4936788B2 publication Critical patent/JP4936788B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2891—Features relating to contacting the IC under test, e.g. probe heads; chucks related to sensing or controlling of force, position, temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
JP2006136133A 2006-05-16 2006-05-16 プローバ及びプローブ接触方法 Expired - Fee Related JP4936788B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006136133A JP4936788B2 (ja) 2006-05-16 2006-05-16 プローバ及びプローブ接触方法
US11/744,192 US7405584B2 (en) 2006-05-16 2007-05-03 Prober and probe contact method
KR1020070047295A KR100851419B1 (ko) 2006-05-16 2007-05-15 프로버 및 탐침 접촉 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006136133A JP4936788B2 (ja) 2006-05-16 2006-05-16 プローバ及びプローブ接触方法

Publications (3)

Publication Number Publication Date
JP2007311389A JP2007311389A (ja) 2007-11-29
JP2007311389A5 JP2007311389A5 (enExample) 2009-04-16
JP4936788B2 true JP4936788B2 (ja) 2012-05-23

Family

ID=38711414

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006136133A Expired - Fee Related JP4936788B2 (ja) 2006-05-16 2006-05-16 プローバ及びプローブ接触方法

Country Status (3)

Country Link
US (1) US7405584B2 (enExample)
JP (1) JP4936788B2 (enExample)
KR (1) KR100851419B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105439B2 (ja) 1986-02-19 1995-11-13 三洋電機株式会社 半導体集積回路装置の製造方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4744382B2 (ja) * 2006-07-20 2011-08-10 株式会社東京精密 プローバ及びプローブ接触方法
JP4932618B2 (ja) * 2007-06-29 2012-05-16 東京エレクトロン株式会社 検査方法及びこの方法を記録したプログラム記録媒体
JP5555633B2 (ja) 2007-10-10 2014-07-23 カスケード・マイクロテク・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング 所定の温度条件下で試験基板を検査する方法及び温度条件を設定可能な検査装置
JP5071131B2 (ja) * 2008-01-31 2012-11-14 東京エレクトロン株式会社 プローブ装置
US7977956B2 (en) * 2009-04-28 2011-07-12 Formfactor, Inc. Method and apparatus for probe card alignment in a test system
KR20110020028A (ko) * 2009-08-21 2011-03-02 삼성전자주식회사 다수의 패드들을 포함하는 반도체 장치
KR20120104812A (ko) * 2011-03-14 2012-09-24 삼성전자주식회사 반도체 디바이스 테스트 장치 및 방법
CN102565677A (zh) * 2012-01-19 2012-07-11 嘉兴景焱智能装备技术有限公司 一种芯片的测试方法及其测试装置和该装置的使用方法
WO2014132856A1 (ja) * 2013-02-27 2014-09-04 株式会社東京精密 プローブ装置のアライメント支援装置及びアライメント支援方法
KR102066155B1 (ko) 2013-03-08 2020-01-14 삼성전자주식회사 프로빙 방법, 이를 수행하기 위한 프로브 카드 및 프로브 카드를 포함하는 프로빙 장치
JP5718978B2 (ja) * 2013-05-28 2015-05-13 株式会社東京精密 ウェーハの検査方法
KR102396428B1 (ko) 2014-11-11 2022-05-11 삼성전자주식회사 반도체 테스트 장치 및 방법
US10481177B2 (en) 2014-11-26 2019-11-19 Tokyo Seimitsu Co. Ltd. Wafer inspection method
JP6821910B2 (ja) * 2017-01-20 2021-01-27 株式会社東京精密 プローバ及びプローブ針の接触方法
JP6869123B2 (ja) * 2017-06-23 2021-05-12 東京エレクトロン株式会社 プローブ装置及び針跡転写方法
CN111316110B (zh) 2017-11-15 2023-07-14 卡普雷斯股份有限公司 用于测试测试样品电气性能的探针和相关的接近探测器
JP7398930B2 (ja) * 2018-11-27 2023-12-15 東京エレクトロン株式会社 検査装置システム
US11262401B2 (en) * 2020-04-22 2022-03-01 Mpi Corporation Wafer probe station
JP7534047B2 (ja) * 2020-12-07 2024-08-14 東京エレクトロン株式会社 検査装置の制御方法及び検査装置
JP7004935B2 (ja) * 2020-12-14 2022-01-21 株式会社東京精密 プローバ及びプローブ針の接触方法
JP7727169B2 (ja) * 2021-06-04 2025-08-21 株式会社東京精密 プローバ制御装置、プローバ制御方法、及びプローバ
JP2023048267A (ja) * 2021-09-28 2023-04-07 エイブリック株式会社 プローバ、プローブ位置補正方法、プローブ位置補正プログラム及び半導体装置の製造方法
CN115274484B (zh) * 2022-08-03 2023-09-29 立川(无锡)半导体设备有限公司 一种晶圆检测装置及其检测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3172760B2 (ja) * 1997-03-07 2001-06-04 東京エレクトロン株式会社 バキュームコンタクタ
US6111421A (en) * 1997-10-20 2000-08-29 Tokyo Electron Limited Probe method and apparatus for inspecting an object
JP3424011B2 (ja) * 1997-11-19 2003-07-07 東京エレクトロン株式会社 プローブ方法及びプローブ装置
JPH11163066A (ja) * 1997-11-29 1999-06-18 Tokyo Electron Ltd ウエハ試験装置
JPH11176893A (ja) * 1997-12-15 1999-07-02 Toshiba Corp ウェーハ測定装置
JP2001210683A (ja) 2000-01-25 2001-08-03 Tokyo Seimitsu Co Ltd プローバのチャック機構
JP3902747B2 (ja) 2002-07-01 2007-04-11 株式会社東京精密 プローブ装置
JP4357813B2 (ja) * 2002-08-23 2009-11-04 東京エレクトロン株式会社 プローブ装置及びプローブ方法
JP4030413B2 (ja) * 2002-11-22 2008-01-09 株式会社東京精密 ウエハプローバ
KR100977328B1 (ko) * 2003-05-09 2010-08-20 동부일렉트로닉스 주식회사 프로버 시스템의 탐침 정렬 방법
US7728953B2 (en) * 2004-03-01 2010-06-01 Nikon Corporation Exposure method, exposure system, and substrate processing apparatus
JP4589710B2 (ja) * 2004-12-13 2010-12-01 株式会社日本マイクロニクス プローバ
JP4529135B2 (ja) * 2005-04-11 2010-08-25 富士機械製造株式会社 対回路基板作業システム
JP4744382B2 (ja) * 2006-07-20 2011-08-10 株式会社東京精密 プローバ及びプローブ接触方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105439B2 (ja) 1986-02-19 1995-11-13 三洋電機株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
KR20070111367A (ko) 2007-11-21
JP2007311389A (ja) 2007-11-29
KR100851419B1 (ko) 2008-08-08
US7405584B2 (en) 2008-07-29
US20070268033A1 (en) 2007-11-22

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