JP4934193B2 - 誘電体バリア放電ランプアセンブリを用いた基板処理チャンバ - Google Patents

誘電体バリア放電ランプアセンブリを用いた基板処理チャンバ Download PDF

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JP4934193B2
JP4934193B2 JP2009507992A JP2009507992A JP4934193B2 JP 4934193 B2 JP4934193 B2 JP 4934193B2 JP 2009507992 A JP2009507992 A JP 2009507992A JP 2009507992 A JP2009507992 A JP 2009507992A JP 4934193 B2 JP4934193 B2 JP 4934193B2
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Japan
Prior art keywords
gas
discharge
electrode
lamp assembly
dielectric barrier
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Expired - Fee Related
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JP2009507992A
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Japanese (ja)
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JP2009535825A5 (https=
JP2009535825A (ja
Inventor
ヨセフ マイケル ラニッシュ，
カウシャル キショア シン，
ブルース アダムス，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
    • H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
JP2009507992A 2006-04-27 2007-04-27 誘電体バリア放電ランプアセンブリを用いた基板処理チャンバ Expired - Fee Related JP4934193B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/380,553 US7978964B2 (en) 2006-04-27 2006-04-27 Substrate processing chamber with dielectric barrier discharge lamp assembly
US11/380,553 2006-04-27
PCT/US2007/067684 WO2007127947A2 (en) 2006-04-27 2007-04-27 Substrate processing chamber with dielectric barrier discharge lamp assembly

Publications (3)

Publication Number Publication Date
JP2009535825A JP2009535825A (ja) 2009-10-01
JP2009535825A5 JP2009535825A5 (https=) 2012-02-09
JP4934193B2 true JP4934193B2 (ja) 2012-05-16

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JP2009507992A Expired - Fee Related JP4934193B2 (ja) 2006-04-27 2007-04-27 誘電体バリア放電ランプアセンブリを用いた基板処理チャンバ

Country Status (3)

Country Link
US (2) US7978964B2 (https=)
JP (1) JP4934193B2 (https=)
WO (1) WO2007127947A2 (https=)

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* Cited by examiner, † Cited by third party
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US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20070128862A1 (en) 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US20080090393A1 (en) * 2006-10-10 2008-04-17 Wolfgang Aderhold Ultra shallow junction with rapid thermal anneal
US20090014423A1 (en) * 2007-07-10 2009-01-15 Xuegeng Li Concentric flow-through plasma reactor and methods therefor
US7718707B2 (en) * 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
US8821637B2 (en) 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US8471170B2 (en) * 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8968438B2 (en) * 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
JP5169046B2 (ja) * 2007-07-20 2013-03-27 ウシオ電機株式会社 光照射式加熱処理装置
US20090053878A1 (en) * 2007-08-21 2009-02-26 Maxim Kelman Method for fabrication of semiconductor thin films using flash lamp processing
US8548311B2 (en) 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US8283607B2 (en) * 2008-04-09 2012-10-09 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US8367983B2 (en) * 2008-04-09 2013-02-05 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US20100096569A1 (en) * 2008-10-21 2010-04-22 Applied Materials, Inc. Ultraviolet-transmitting microwave reflector comprising a micromesh screen
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
US8584612B2 (en) * 2009-12-17 2013-11-19 Lam Research Corporation UV lamp assembly of degas chamber having rotary shutters
US8865602B2 (en) * 2012-09-28 2014-10-21 Applied Materials, Inc. Edge ring lip
US9153427B2 (en) 2012-12-18 2015-10-06 Agilent Technologies, Inc. Vacuum ultraviolet photon source, ionization apparatus, and related methods
JP5931769B2 (ja) * 2013-02-01 2016-06-08 アイシン高丘株式会社 赤外炉及び赤外線加熱方法
US20140270731A1 (en) * 2013-03-12 2014-09-18 Applied Materials, Inc. Thermal management apparatus for solid state light source arrays
CN105190851B (zh) * 2013-05-10 2018-03-16 应用材料公司 使用顺应性材料进行的圆顶冷却
US10410890B2 (en) * 2013-06-21 2019-09-10 Applied Materials, Inc. Light pipe window structure for thermal chamber applications and processes
KR20170013916A (ko) * 2014-05-27 2017-02-07 어플라이드 머티어리얼스, 인코포레이티드 연성 재료를 이용한 윈도우 냉각
JP2016018609A (ja) * 2014-07-04 2016-02-01 ウシオ電機株式会社 エキシマランプおよびエキシマ光照射装置
US10699922B2 (en) * 2014-07-25 2020-06-30 Applied Materials, Inc. Light pipe arrays for thermal chamber applications and thermal processes
KR101771667B1 (ko) * 2015-12-18 2017-08-28 한국과학기술원 유전체 장벽 방전용 전극 조립체 및 이를 이용한 플라즈마 처리장치
CN109011180B (zh) * 2018-08-24 2024-06-14 重庆半岛医疗科技有限公司 一种均匀发光的介质阻挡放电光源

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485333A (en) 1982-04-28 1984-11-27 Eg&G, Inc. Vapor discharge lamp assembly
JPS63260132A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 表面改質装置
JPH01134932A (ja) * 1987-11-19 1989-05-26 Oki Electric Ind Co Ltd 基板清浄化方法及び基板清浄化装置
US5155336A (en) 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
JPH0410410A (ja) * 1990-02-02 1992-01-14 Sharp Corp 薄膜製造装置
JP4218192B2 (ja) * 1999-08-05 2009-02-04 株式会社日立ハイテクノロジーズ 基板処理装置及び処理方法
US6631726B1 (en) 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
JP2001176865A (ja) * 1999-12-15 2001-06-29 Seiko Epson Corp 処理装置及び処理方法

Also Published As

Publication number Publication date
US7978964B2 (en) 2011-07-12
US20110263138A1 (en) 2011-10-27
WO2007127947A2 (en) 2007-11-08
WO2007127947A3 (en) 2008-12-04
US8582962B2 (en) 2013-11-12
JP2009535825A (ja) 2009-10-01
US20070252500A1 (en) 2007-11-01

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