JP4920152B2 - 構造基板の製造方法および半導体素子の製造方法 - Google Patents

構造基板の製造方法および半導体素子の製造方法 Download PDF

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Publication number
JP4920152B2
JP4920152B2 JP2001315705A JP2001315705A JP4920152B2 JP 4920152 B2 JP4920152 B2 JP 4920152B2 JP 2001315705 A JP2001315705 A JP 2001315705A JP 2001315705 A JP2001315705 A JP 2001315705A JP 4920152 B2 JP4920152 B2 JP 4920152B2
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region
substrate
manufacturing
semiconductor
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JP2003124115A (ja
JP2003124115A5 (enExample
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俊雅 小林
健作 元木
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Sony Corp
Sumitomo Electric Industries Ltd
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Sony Corp
Sumitomo Electric Industries Ltd
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JP2001315705A 2001-10-12 2001-10-12 構造基板の製造方法および半導体素子の製造方法 Expired - Lifetime JP4920152B2 (ja)

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JP2001315705A JP4920152B2 (ja) 2001-10-12 2001-10-12 構造基板の製造方法および半導体素子の製造方法

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JP2001315705A JP4920152B2 (ja) 2001-10-12 2001-10-12 構造基板の製造方法および半導体素子の製造方法

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JP2003124115A JP2003124115A (ja) 2003-04-25
JP2003124115A5 JP2003124115A5 (enExample) 2005-06-23
JP4920152B2 true JP4920152B2 (ja) 2012-04-18

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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3916584B2 (ja) 2003-04-24 2007-05-16 シャープ株式会社 窒化物半導体レーザ装置
US7462882B2 (en) 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
JP4229005B2 (ja) 2003-06-26 2009-02-25 住友電気工業株式会社 ＧａＮ基板及びその製造方法、並びに窒化物半導体素子
JP3841092B2 (ja) 2003-08-26 2006-11-01 住友電気工業株式会社 発光装置
JP2005191530A (ja) 2003-12-03 2005-07-14 Sumitomo Electric Ind Ltd 発光装置
US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
TWI375994B (en) * 2004-09-01 2012-11-01 Sumitomo Electric Industries Epitaxial substrate and semiconductor element
WO2007001098A1 (en) * 2005-06-25 2007-01-04 Seoul Opto Device Co., Ltd. Nanostructure having a nitride-based quantum well and light emitting diode employing the same
JP4907929B2 (ja) * 2005-06-27 2012-04-04 株式会社東芝 電界効果型半導体装置及び電界効果型半導体装置の製造方法
JP4656410B2 (ja) 2005-09-05 2011-03-23 住友電気工業株式会社 窒化物半導体デバイスの製造方法
JP5168849B2 (ja) 2006-08-11 2013-03-27 住友電気工業株式会社 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法
JP5509840B2 (ja) * 2009-12-22 2014-06-04 豊田合成株式会社 半導体発光素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100629558B1 (ko) * 1997-10-30 2006-09-27 스미토모덴키고교가부시키가이샤 ＧａＮ단결정기판 및 그 제조방법
AU2795699A (en) * 1998-02-27 1999-09-15 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth through masks, and gallium nitride semiconductor structures fabricated thereby
JP2001068786A (ja) * 1999-06-24 2001-03-16 Sharp Corp 窒化物系化合物半導体発光素子およびその製造方法
JP4145437B2 (ja) * 1999-09-28 2008-09-03 住友電気工業株式会社 単結晶ＧａＮの結晶成長方法及び単結晶ＧａＮ基板の製造方法と単結晶ＧａＮ基板
JP3571641B2 (ja) * 1999-11-15 2004-09-29 松下電器産業株式会社 窒化物半導体素子
US6355497B1 (en) * 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
JP4797257B2 (ja) * 2001-02-22 2011-10-19 ソニー株式会社 半導体素子の作製方法
JP3864870B2 (ja) * 2001-09-19 2007-01-10 住友電気工業株式会社 単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
JP3801125B2 (ja) * 2001-10-09 2006-07-26 住友電気工業株式会社 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
JP4290358B2 (ja) * 2001-10-12 2009-07-01 住友電気工業株式会社 半導体発光素子の製造方法
JP4388720B2 (ja) * 2001-10-12 2009-12-24 住友電気工業株式会社 半導体発光素子の製造方法

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