JP4908935B2 - 光電変換装置及び撮像システム - Google Patents

光電変換装置及び撮像システム Download PDF

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Publication number
JP4908935B2
JP4908935B2 JP2006161641A JP2006161641A JP4908935B2 JP 4908935 B2 JP4908935 B2 JP 4908935B2 JP 2006161641 A JP2006161641 A JP 2006161641A JP 2006161641 A JP2006161641 A JP 2006161641A JP 4908935 B2 JP4908935 B2 JP 4908935B2
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Japan
Prior art keywords
photoelectric conversion
insulating layer
switching element
conversion device
conversion element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006161641A
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English (en)
Japanese (ja)
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JP2007329433A (ja
JP2007329433A5 (enExample
Inventor
実 渡辺
千織 望月
孝昌 石井
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006161641A priority Critical patent/JP4908935B2/ja
Priority to US11/750,719 priority patent/US7550731B2/en
Publication of JP2007329433A publication Critical patent/JP2007329433A/ja
Publication of JP2007329433A5 publication Critical patent/JP2007329433A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2006161641A 2006-06-09 2006-06-09 光電変換装置及び撮像システム Expired - Fee Related JP4908935B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006161641A JP4908935B2 (ja) 2006-06-09 2006-06-09 光電変換装置及び撮像システム
US11/750,719 US7550731B2 (en) 2006-06-09 2007-05-18 Coversion apparatus and imaging system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006161641A JP4908935B2 (ja) 2006-06-09 2006-06-09 光電変換装置及び撮像システム

Publications (3)

Publication Number Publication Date
JP2007329433A JP2007329433A (ja) 2007-12-20
JP2007329433A5 JP2007329433A5 (enExample) 2009-07-09
JP4908935B2 true JP4908935B2 (ja) 2012-04-04

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Family Applications (1)

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JP2006161641A Expired - Fee Related JP4908935B2 (ja) 2006-06-09 2006-06-09 光電変換装置及び撮像システム

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US (1) US7550731B2 (enExample)
JP (1) JP4908935B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638772B2 (en) * 2007-02-28 2009-12-29 Canon Kabushiki Kaisha Imaging apparatus and radiation imaging system
WO2010067645A1 (ja) * 2008-12-10 2010-06-17 シャープ株式会社 表示装置
JP5500876B2 (ja) * 2009-06-08 2014-05-21 キヤノン株式会社 光電変換装置の製造方法
JP5766467B2 (ja) * 2011-03-02 2015-08-19 株式会社東芝 薄膜トランジスタ及びその製造方法、表示装置
JP5963551B2 (ja) 2012-06-06 2016-08-03 キヤノン株式会社 アクティブマトリクスパネル、検出装置、及び、検出システム
US9935152B2 (en) 2012-12-27 2018-04-03 General Electric Company X-ray detector having improved noise performance
US9917133B2 (en) * 2013-12-12 2018-03-13 General Electric Company Optoelectronic device with flexible substrate
WO2015138329A1 (en) 2014-03-13 2015-09-17 General Electric Company Curved digital x-ray detector for weld inspection
WO2016104339A1 (ja) * 2014-12-25 2016-06-30 シャープ株式会社 フォトセンサ基板、及びその製造方法
US9628105B1 (en) * 2015-10-02 2017-04-18 Senseeker Engineering Inc. Electronic circuit having dynamic resistance element

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05243547A (ja) * 1992-03-02 1993-09-21 Hitachi Ltd 薄膜光センサ
US5917199A (en) * 1998-05-15 1999-06-29 Ois Optical Imaging Systems, Inc. Solid state imager including TFTS with variably doped contact layer system for reducing TFT leakage current and increasing mobility and method of making same
JP2002148342A (ja) * 2000-11-07 2002-05-22 Canon Inc 放射線撮像装置
JP3884922B2 (ja) * 2001-05-11 2007-02-21 キヤノン株式会社 光検出装置及び放射線検出装置
US6847039B2 (en) 2001-03-28 2005-01-25 Canon Kabushiki Kaisha Photodetecting device, radiation detecting device, and radiation imaging system
JP2003258226A (ja) * 2002-02-27 2003-09-12 Canon Inc 放射線検出装置及びその製造方法
TW540128B (en) * 2002-07-12 2003-07-01 Hannstar Display Corp Manufacturing method of X-ray detector array
JP4266656B2 (ja) * 2003-02-14 2009-05-20 キヤノン株式会社 固体撮像装置及び放射線撮像装置
JP4067055B2 (ja) * 2003-10-02 2008-03-26 キヤノン株式会社 撮像装置及びその製造方法、放射線撮像装置、放射線撮像システム

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Publication number Publication date
JP2007329433A (ja) 2007-12-20
US7550731B2 (en) 2009-06-23
US20070295966A1 (en) 2007-12-27

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