JP4908227B2 - Ｍｒａｍ技術のｍｔｊに使用される合成反強磁性体構造 - Google Patents

Ｍｒａｍ技術のｍｔｊに使用される合成反強磁性体構造 Download PDF

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Publication number
JP4908227B2
JP4908227B2 JP2006545636A JP2006545636A JP4908227B2 JP 4908227 B2 JP4908227 B2 JP 4908227B2 JP 2006545636 A JP2006545636 A JP 2006545636A JP 2006545636 A JP2006545636 A JP 2006545636A JP 4908227 B2 JP4908227 B2 JP 4908227B2
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layer
electrode
saf
mtj
ferromagnetic
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Japanese (ja)
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JP2007515075A (ja
JP2007515075A5 (enExample
Inventor
ブイ． ピータムバラム、スリーニバス
ダブリュ． デイブ、レヌー
エム． スローター、ジョン
サン、ジージュン
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Everspin Technologies Inc
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Everspin Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
JP2006545636A 2003-12-18 2004-11-04 Ｍｒａｍ技術のｍｔｊに使用される合成反強磁性体構造 Expired - Lifetime JP4908227B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/740,338 US6946697B2 (en) 2003-12-18 2003-12-18 Synthetic antiferromagnet structures for use in MTJs in MRAM technology
US10/740,338 2003-12-18
PCT/US2004/037058 WO2005067472A2 (en) 2003-12-18 2004-11-04 Synthetic antiferromagnet structures for use in mtjs in mram technology

Publications (3)

Publication Number Publication Date
JP2007515075A JP2007515075A (ja) 2007-06-07
JP2007515075A5 JP2007515075A5 (enExample) 2007-12-13
JP4908227B2 true JP4908227B2 (ja) 2012-04-04

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JP2006545636A Expired - Lifetime JP4908227B2 (ja) 2003-12-18 2004-11-04 Ｍｒａｍ技術のｍｔｊに使用される合成反強磁性体構造

Country Status (7)

Country Link
US (2) US6946697B2 (enExample)
EP (1) EP1697996A2 (enExample)
JP (1) JP4908227B2 (enExample)
KR (1) KR101122970B1 (enExample)
CN (1) CN100495723C (enExample)
TW (1) TWI370545B (enExample)
WO (1) WO2005067472A2 (enExample)

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Also Published As

Publication number Publication date
CN100495723C (zh) 2009-06-03
TWI370545B (en) 2012-08-11
WO2005067472A2 (en) 2005-07-28
CN1894801A (zh) 2007-01-10
EP1697996A2 (en) 2006-09-06
TW200532914A (en) 2005-10-01
WO2005067472A3 (en) 2006-03-02
US20050247964A1 (en) 2005-11-10
US7226796B2 (en) 2007-06-05
KR20070001912A (ko) 2007-01-04
US20050133840A1 (en) 2005-06-23
US6946697B2 (en) 2005-09-20
KR101122970B1 (ko) 2012-03-15
JP2007515075A (ja) 2007-06-07

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