KR101122970B1 - Ｍｒａｍ 기술의 ｍｔｊｓ에 사용하는 합성 반강자성체구조 - Google Patents

Ｍｒａｍ 기술의 ｍｔｊｓ에 사용하는 합성 반강자성체구조 Download PDF

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KR101122970B1
KR101122970B1 KR1020067011933A KR20067011933A KR101122970B1 KR 101122970 B1 KR101122970 B1 KR 101122970B1 KR 1020067011933 A KR1020067011933 A KR 1020067011933A KR 20067011933 A KR20067011933 A KR 20067011933A KR 101122970 B1 KR101122970 B1 KR 101122970B1
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South Korea
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layer
mtj
electrode
ferromagnetic
iron
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KR20070001912A (ko
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스리니바스 브이. 피에탐바람
레누 더블유. 데이브
존 엠. 슬러터
지준 선
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에버스핀 테크놀러지스, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1107—Magnetoresistive
    • Y10T428/1121—Multilayer

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
KR1020067011933A 2003-12-18 2004-11-04 Ｍｒａｍ 기술의 ｍｔｊｓ에 사용하는 합성 반강자성체구조 Expired - Fee Related KR101122970B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/740,338 2003-12-18
US10/740,338 US6946697B2 (en) 2003-12-18 2003-12-18 Synthetic antiferromagnet structures for use in MTJs in MRAM technology
PCT/US2004/037058 WO2005067472A2 (en) 2003-12-18 2004-11-04 Synthetic antiferromagnet structures for use in mtjs in mram technology

Publications (2)

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KR20070001912A KR20070001912A (ko) 2007-01-04
KR101122970B1 true KR101122970B1 (ko) 2012-03-15

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US (2) US6946697B2 (enExample)
EP (1) EP1697996A2 (enExample)
JP (1) JP4908227B2 (enExample)
KR (1) KR101122970B1 (enExample)
CN (1) CN100495723C (enExample)
TW (1) TWI370545B (enExample)
WO (1) WO2005067472A2 (enExample)

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Also Published As

Publication number Publication date
KR20070001912A (ko) 2007-01-04
JP2007515075A (ja) 2007-06-07
TWI370545B (en) 2012-08-11
EP1697996A2 (en) 2006-09-06
JP4908227B2 (ja) 2012-04-04
CN100495723C (zh) 2009-06-03
TW200532914A (en) 2005-10-01
CN1894801A (zh) 2007-01-10
WO2005067472A2 (en) 2005-07-28
WO2005067472A3 (en) 2006-03-02
US20050133840A1 (en) 2005-06-23
US6946697B2 (en) 2005-09-20
US20050247964A1 (en) 2005-11-10
US7226796B2 (en) 2007-06-05

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