JP4907693B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4907693B2 JP4907693B2 JP2009116030A JP2009116030A JP4907693B2 JP 4907693 B2 JP4907693 B2 JP 4907693B2 JP 2009116030 A JP2009116030 A JP 2009116030A JP 2009116030 A JP2009116030 A JP 2009116030A JP 4907693 B2 JP4907693 B2 JP 4907693B2
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- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Description
一方、この発明が対象とする半導体装置は、基板に搭載されたスイッチング素子と配線部材とを有し、配線部材は、装置外部と電流の受け渡しをするために、外部端子と接続されるとともに、スイッチング素子とも接続される。スイッチング素子と配線部材の接続には、主として比較的電気抵抗が小さいアルミニウムを主成分とする材質からなる金属細線が用いられることが多い。また、スイッチング素子には、半導体装置が制御する電流を引き出すための第一の電極が素子表面に形成されるとともに、電流を流したり遮断したりするために電圧もしくは電流を印加する第二の電極が第一の電極と同じ素子表面に形成されている。
図1は、この発明の実施の形態1を説明するために一部を取り出した部分模式図であり、図1(a)は平面、図1(b)は横断面を示す。
スイッチング素子1は、基板2に形成された金属配線パターン3の上に例えばはんだや導電ペーストによって接合される。スイッチング素子1には、その表面に半導体装置の主たる電流を制御するための第一の電極4と、スイッチング素子のゲートあるいはベースの電圧もしくは電流を制御するための第二の電極5が形成されている。第一の電極4には本実施の形態では4本の第一の金属細線6が接合されている。第一の金属細線6のもう一方の端部は、外装ケース7に保持された第一の配線部材である第一のターミナル部8あるいは基板2上の配線パターン部12に接合されている。このように、第一の金属細線によって第一の配線部材とスイッチング素子、あるいはスイッチング素子同士を電気的に接続することになる。
また、第一の金属細線6は大きな電流を制御するために、電気抵抗の小さいアルミニウムを材質とし、線径は直径100〜600μm程度で、好ましくは、300〜500μmであれば、接合する際のエネルギーでスイッチング素子に損傷を与えることなく、接合することができる。一方、第二の金属細線9は、同等の機械的特性を有するアルミニウムあるいは金を材質とし、線径は直径15〜150μm程度で、好ましくは、20〜80μmであれば、第二の電極面積に対して十分に位置的な尤度をもって接合することができる。
第二の金属細線9は線径が小さいために、第一の金属細線と比べると剛性があまり大きくなく、半導体装置がさらされる温度サイクルや振動が加わると、封入樹脂との機械的物性の差異によって封入樹脂と金属細線が相対的に変位し、発生するストレスに対する耐量が第一の金属細線6に比べて小さい。
また、剛性が高い第一の金属細線6が例えば振動時に封入樹脂11に対して発生する慣性力を受け止めて樹脂の動きを拘束するため、剛性が小さい第二の金属細線9が樹脂に揺られることがなく、耐振性の向上が顕著である。
図2は、この発明の実施の形態2を説明するための半導体装置の概略図で、平面図を模式的に示す図である。本実施の形態では、第二の金属細線9a、9bは第一の金属細線6a、6bに囲まれるように配線されている。同様に、第二の金属細線9c、9dは第一の金属細線6c、6dに囲まれるように配線されている。また、図示しないが本実施形態においても、半導体装置内部に樹脂が封入されている。
剛性が大きい第一の金属細線6a、6b、6c、6dによって囲まれる領域の封入樹脂は、両側の金属細線に拘束されるために温度変化や振動時の変位が小さくなり、第一の金属細線6a、6b、6c、6dと同等材質である第二の金属細線9a、9b、9c、9dとの相対変位が小さくなり、ストレスを低減することができる。
さらに、第一の金属細線6a、6b、6c、6dによって囲まれる領域は小さい容積であるために、第二の金属細線9a、9b、9c、9dへの機械的影響が小さくなり、とりわけ振動時の樹脂の動きが小さくなるので、耐振性の向上が顕著となる。
なお、第一の金属細線6aは第二の金属細線9aよりも長く、第二の金属細線9a、9bと第二の電極5ならびに配線パターン部12の接合部は、第一の金属細線6aの両端部から金属細線6bとの垂線で囲まれた領域(図3中斜線部)内に位置している。第二の金属細線9c、9dの場合も同様である。このような位置関係によって、特に信頼性を左右する接合部14、15近傍の樹脂が剛性の高い第一の金属細線6a、6b又は6c、6dの拘束を受けるので、接合部の信頼性が向上し、半導体装置としての信頼性が向上する。
なお、本発明の実施形態のごとく、第一の金属細線が複数本形成されている場合には、第二の金属細線に最も近く配置された第一の金属細線6a1,6b1,6c1,6d1が、その他の金属細線と異なり、第二の金属細線の高さより高くするようにすれば、他の第一の金属細線を所望の高さとしつつ、上記と同様の効果を奏することができる。
Claims (2)
- スイッチング素子、前記スイッチング素子に形成された第一の電極と第二の電極、前記第一の電極と電気的に繋がる第一の配線部材、前記第一の電極と前記第一の配線部材を繋ぐ少なくとも1本の第一の金属細線、前記第二の電極と電気的に繋がる第二の配線部材、前記第二の電極と前記第二の配線部材を繋ぐ少なくとも1本の第二の金属細線、前記スイッチング素子、前記第一の配線部材、前記第二の配線部材、前記第一の金属細線および前記第二の金属細線を収納する外装ケース、前記外装ケースに封入する封入樹脂とを有する半導体装置であって、前記第一の金属細線は、前記第二の金属細線よりも線径が大きく、前記第一の金属細線の近傍に略並行に前記第二の金属細線を配線するとともに、前記第一の金属細線の高さは、前記第二の金属細線の高さより高くなるよう配線され、しかも、前記第二の金属細線は、前記第一の金属細線に囲まれるように配線されているものであり、前記第一の金属細線は複数本平行して設けられ、そのうち、少なくとも前記第二の金属細線に最も近い金属細線を前記第二の金属細線の高さよりも高くしたことを特徴とする半導体装置。
- 前記第二の金属細線と接続される配線パターン部は、前記第一の金属細線の下をくぐって形成されていることを特徴とする請求項1記載の半導体装置。
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