JP4906425B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4906425B2
JP4906425B2 JP2006202715A JP2006202715A JP4906425B2 JP 4906425 B2 JP4906425 B2 JP 4906425B2 JP 2006202715 A JP2006202715 A JP 2006202715A JP 2006202715 A JP2006202715 A JP 2006202715A JP 4906425 B2 JP4906425 B2 JP 4906425B2
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JP
Japan
Prior art keywords
refrigerant
sample
sample stage
space
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006202715A
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English (en)
Japanese (ja)
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JP2008034408A5 (https=
JP2008034408A (ja
Inventor
賢悦 横川
匠 丹藤
誠一郎 菅野
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2006202715A priority Critical patent/JP4906425B2/ja
Priority to US11/512,081 priority patent/US7771564B2/en
Publication of JP2008034408A publication Critical patent/JP2008034408A/ja
Publication of JP2008034408A5 publication Critical patent/JP2008034408A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2006202715A 2006-07-26 2006-07-26 プラズマ処理装置 Expired - Fee Related JP4906425B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006202715A JP4906425B2 (ja) 2006-07-26 2006-07-26 プラズマ処理装置
US11/512,081 US7771564B2 (en) 2006-07-26 2006-08-30 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006202715A JP4906425B2 (ja) 2006-07-26 2006-07-26 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2008034408A JP2008034408A (ja) 2008-02-14
JP2008034408A5 JP2008034408A5 (https=) 2009-07-09
JP4906425B2 true JP4906425B2 (ja) 2012-03-28

Family

ID=38984961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006202715A Expired - Fee Related JP4906425B2 (ja) 2006-07-26 2006-07-26 プラズマ処理装置

Country Status (2)

Country Link
US (1) US7771564B2 (https=)
JP (1) JP4906425B2 (https=)

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US20040149219A1 (en) * 2002-10-02 2004-08-05 Tomohiro Okumura Plasma doping method and plasma doping apparatus
JP4906425B2 (ja) * 2006-07-26 2012-03-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
DE102007026349A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Aus einer Vielzahl diffusionsverschweißter Scheiben bestehender Gasverteiler
JP5417338B2 (ja) * 2007-10-31 2014-02-12 ラム リサーチ コーポレーション 冷却液と構成部品本体との間の熱伝導性を制御するためにガス圧を使用する温度制御モジュール及び温度制御方法
JP2009204288A (ja) * 2008-02-29 2009-09-10 Nishiyama Corp 冷却装置
JP5382602B2 (ja) * 2008-03-11 2014-01-08 住友電気工業株式会社 ウエハ保持体および半導体製造装置
JP5210706B2 (ja) * 2008-05-09 2013-06-12 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
KR101514098B1 (ko) * 2009-02-02 2015-04-21 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치와 온도 측정 방법 및 장치
US8042351B2 (en) * 2009-11-13 2011-10-25 Echostar Technologies Llc Systems and methods for providing air conditioning to an electronic component in a satellite antenna installation
JP5401286B2 (ja) * 2009-12-04 2014-01-29 株式会社日立ハイテクノロジーズ 試料台の温度制御機能を備えた真空処理装置及びプラズマ処理装置
US9978565B2 (en) * 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components
KR101276262B1 (ko) * 2011-11-21 2013-06-20 피에스케이 주식회사 반도체 제조 장치 및 반도체 제조 방법
JP5863582B2 (ja) * 2012-07-02 2016-02-16 東京エレクトロン株式会社 プラズマ処理装置、及び温度制御方法
WO2014116392A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Electrostatic chuck with concentric cooling base
TW201518538A (zh) * 2013-11-11 2015-05-16 應用材料股份有限公司 像素化冷卻溫度控制的基板支撐組件
US9034771B1 (en) * 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
KR101563495B1 (ko) * 2014-07-31 2015-10-27 한국에너지기술연구원 광-전자적 측정 시에 샘플의 온도를 제어하는 장치 및 이를 이용한 태양전지 측정 장치
KR102147615B1 (ko) 2014-10-30 2020-08-24 도쿄엘렉트론가부시키가이샤 기판 적재대
JP6982394B2 (ja) * 2017-02-02 2021-12-17 東京エレクトロン株式会社 被加工物の処理装置、及び載置台
CN107841727A (zh) * 2017-12-15 2018-03-27 北京创昱科技有限公司 一种冷却构件及真空镀膜设备
JP7066438B2 (ja) * 2018-02-13 2022-05-13 東京エレクトロン株式会社 冷却システム
JP7101024B2 (ja) * 2018-04-03 2022-07-14 東京エレクトロン株式会社 温調システム
JP7112915B2 (ja) * 2018-09-07 2022-08-04 東京エレクトロン株式会社 温調システム
KR102646904B1 (ko) 2018-12-04 2024-03-12 삼성전자주식회사 플라즈마 처리 장치
JP7458156B2 (ja) * 2019-08-22 2024-03-29 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2026015961A (ja) * 2024-07-22 2026-02-03 東京エレクトロン株式会社 ステージ、基板処理装置、および温度調整方法
CN120272875B (zh) * 2025-05-07 2025-11-14 山东力冠微电子装备有限公司 制备大尺寸多晶金刚石薄膜的mpcvd设备及制备方法

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JP2512783B2 (ja) * 1988-04-20 1996-07-03 株式会社日立製作所 プラズマエッチング方法及び装置
EP0491503A3 (en) * 1990-12-19 1992-07-22 AT&T Corp. Method for depositing metal
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
US5427670A (en) * 1992-12-10 1995-06-27 U.S. Philips Corporation Device for the treatment of substrates at low temperature
JPH09157846A (ja) * 1995-12-01 1997-06-17 Teisan Kk 温度調節装置
US5748435A (en) * 1996-12-30 1998-05-05 Applied Materials, Inc. Apparatus for controlling backside gas pressure beneath a semiconductor wafer
JP3965258B2 (ja) * 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US6474986B2 (en) * 1999-08-11 2002-11-05 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
US6450805B1 (en) * 1999-08-11 2002-09-17 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP2002134417A (ja) * 2000-10-23 2002-05-10 Tokyo Electron Ltd プラズマ処理装置
US6581275B2 (en) * 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US6656838B2 (en) * 2001-03-16 2003-12-02 Hitachi, Ltd. Process for producing semiconductor and apparatus for production
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
KR100389449B1 (ko) * 2001-06-26 2003-06-27 주성엔지니어링(주) 대칭형 유로블럭을 가지는 진공판
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
US7195693B2 (en) * 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
JP4214114B2 (ja) * 2002-09-10 2009-01-28 東京エレクトロン株式会社 処理装置，および，処理装置のメンテナンス方法
US7347901B2 (en) * 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
JP2005079539A (ja) * 2003-09-03 2005-03-24 Hitachi Ltd プラズマ処理装置
JP2005085803A (ja) * 2003-09-04 2005-03-31 Shinwa Controls Co Ltd サセプタ
JP4191120B2 (ja) 2004-09-29 2008-12-03 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4906425B2 (ja) * 2006-07-26 2012-03-28 株式会社日立ハイテクノロジーズ プラズマ処理装置

Also Published As

Publication number Publication date
US20080023147A1 (en) 2008-01-31
US7771564B2 (en) 2010-08-10
JP2008034408A (ja) 2008-02-14

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