CN107841727A - 一种冷却构件及真空镀膜设备 - Google Patents

一种冷却构件及真空镀膜设备 Download PDF

Info

Publication number
CN107841727A
CN107841727A CN201711353205.8A CN201711353205A CN107841727A CN 107841727 A CN107841727 A CN 107841727A CN 201711353205 A CN201711353205 A CN 201711353205A CN 107841727 A CN107841727 A CN 107841727A
Authority
CN
China
Prior art keywords
cooling
rotating shaft
chamber
bar
actuator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711353205.8A
Other languages
English (en)
Inventor
管长乐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zishi Energy Co.,Ltd.
Original Assignee
Beijing Chong Yu Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Chong Yu Technology Co Ltd filed Critical Beijing Chong Yu Technology Co Ltd
Priority to CN201711353205.8A priority Critical patent/CN107841727A/zh
Publication of CN107841727A publication Critical patent/CN107841727A/zh
Priority to PCT/CN2018/092388 priority patent/WO2019114237A1/zh
Priority to JP2018123296A priority patent/JP2019108606A/ja
Priority to TW107122520A priority patent/TWI662143B/zh
Priority to KR1020180075880A priority patent/KR20190072389A/ko
Priority to US16/022,733 priority patent/US20190189473A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411Cooling of the reaction chamber walls
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463Cooling of the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D15/00Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
    • F28D15/02Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
    • F28D15/0266Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with separate evaporating and condensing chambers connected by at least one conduit; Loop-type heat pipes; with multiple or common evaporating or condensing chambers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32522Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002Cooling arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001Maintaining constant desired temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明涉及半导体生产设备领域,公开了一种冷却构件及真空镀膜设备,包括冷却板和旋转机构,所述冷却板包括若干根冷却条,所述冷却条与冷却液管路连通,所述旋转机构包括驱动件和转轴,所述驱动件与所述转轴的一端连接,所述转轴的另一端与所述冷却条连接。旋转机构驱动冷却板内的冷却条转动,冷却状态,冷却条与腔室内的基片平行,加大冷却面积,提高冷却效率;非冷却状态,驱动件驱动冷却条转动,使冷却条与腔室内的基片垂直,减小冷却面积,提高加热效率,实现工艺温度的快速切换,降低工艺生产时间,提高设备产能,节约能源消耗。

Description

一种冷却构件及真空镀膜设备
技术领域
本发明涉及半导体生产设备领域,特别是涉及一种冷却构件及真空镀膜设备。
背景技术
在薄膜太阳能电池组件中,薄膜层起到光电转换的作用,其性能在很大程度上决定了电池片的光电转换效率,即电池片的关键性能参数。薄膜层一般采用MOCVD(MetalOrganic Chemical Vapor Deposition,金属有机化学气相沉积)的加工方式进行材料生长,而MOCVD生产设备非常昂贵,在整条薄膜太阳能电池片生产线中,MOCVD设备成本占据非常高的比例,其产能的提高能够极大的降低电池片的制造成本。
MOCVD的机理是一种热化学反应,在较高的温度下(一般在几百到1000摄氏度之间),真空腔室中通入特定的工艺气体以及金属有机物源,进行化学反应,在基片上生长出特定材料的薄膜层。一个连续工艺过程(一般持续几分钟到几十分钟之间)往往分为几个阶段,在不同的阶段,工艺温度和工艺气体会有变化,工艺气体种类切换和流量控制,当前已经有很多成熟的零部件以及控制方法可用,但工艺温度的快速切换将影响电池片膜层生长工艺的总时间,影响到设备产能。
MOCVD工艺腔室在真空条件下工作,设定的工艺压力一般在几十到一百Torr之间,真空腔室内的气体对流传热效率会非常低,且由于膜层生长其上的基片与加热器不接触,没有热传导产生,因此,基片的温度切换都是采用热辐射的方式获得能量。
当前的常见方案,真空腔室构成一个空间,真空腔室外壁由耐腐蚀的不锈钢材料构成,由于基片的温度范围控制在300~1200℃,而根据实际需要及安全考虑,腔室外壁不能超过60℃,所以,腔室外壁会设计有冷却水系统,确保工艺过程中,腔室壁温度稳定。当前,加热一般采用红外灯管作为加热源,通过热辐射,基片升温速度很快,可达到20度/秒以上,甚至可以把基片的加热分别在两个腔室分段进行,第一个腔室的作用是预热,比如加热到500摄氏度,然后再传入第二个腔室,即工艺腔室,能迅速加热到工艺温度(比如700℃),节省加热所需的时间,提高设备的产能。但在工艺腔室内,基片在不同工艺阶段需要切换成不同的温度,部分相邻工艺步骤之间需要降低温度,并且在工艺结束后,基片温度必须降低到一定范围才能传出工艺腔室,一般在400℃左右,如果在较高温度下传出长有膜层的基片,新生成的膜层将在高温下挥发分解,造成膜层质量下降,并污染传输腔室。在这些温度降低的过程中,当前常用的方法是停止红外灯管的能量,通过腔室壁(恒温,25℃)的冷却系统将热量带走,基片冷却时间较长,从而降低了设备产能。
发明内容
(一)要解决的技术问题
本发明的目的是提供一种冷却构件及真空镀膜设备,以解决现有太阳能电池片膜层生长工艺中无法快速切换工艺温度,设备产能低的问题。
(二)技术方案
为了解决上述技术问题,本发明提供一种冷却构件,包括冷却板和旋转机构,所述冷却板包括若干根冷却条,所述冷却条与冷却液管路连通,所述旋转机构包括驱动件和转轴,所述驱动件与所述转轴的一端连接,所述转轴的另一端与所述冷却条连接。
其中,所述冷却板还包括框架,所述冷却条设于所述框架内,所述框架上设有用以所述转轴穿过的穿孔。
其中,所述冷却条设有与所述转轴适配的贯穿孔,所述冷却条与所述转轴同步转动。
其中,所述驱动件为电机或气缸。
其中,所述框架与所述转轴的材质均为不锈钢材质。
一种真空镀膜设备,包括腔室、用以加热基片的加热灯管和以上任一项所述的冷却构件,所述驱动件安装在所述腔室的侧壁外侧,所述冷却板安装在所述加热灯管与所述腔室的底板之间。
其中,所述转轴的一端通过第一密封旋转装置穿过腔室的侧壁与所述驱动件连接,所述转轴的另一端通过第二密封旋转装置可旋转的安装在对称侧的腔室侧壁上。
其中,所述第一密封旋转装置与所述第二密封旋转装置均为磁流体轴承。
其中,所述框架通过支撑件固定在所述腔室的底板上侧。
其中,所述加热灯管为红外灯管,所述红外灯管安装于基片的下侧。
(三)有益效果
本发明提供的一种冷却构件,旋转机构驱动冷却板内的冷却条转动,冷却状态,冷却条与腔室内的基片平行,加大冷却面积,提高冷却效率;非冷却状态,驱动件驱动冷却条转动,使冷却条与腔室内的基片垂直,减小冷却面积,提高加热效率,实现工艺温度的快速切换,降低工艺生产时间,提高设备产能,节约能源消耗。
附图说明
图1为本发明实施例的结构示意图;
图2为图1中沿A-A向的剖视图。
图中,1:腔室;2:基片;3:加热灯管;4:冷却板;41:框架;42:冷却条;5:驱动件;6:第一密封旋转装置;7:转轴;8:第二密封旋转装置。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实例用于说明本发明,但不用来限制本发明的范围。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
如图2所示,本发明实施例提供一种冷却构件,包括冷却板4和旋转机构,冷却板4包括框架41和设于框架41内的冷却条42,冷却条42与冷却液管路连通,旋转机构包括驱动件5和转轴7,驱动件5与转轴7的一端连接,框架41上设有穿孔,转轴7的另一端穿过穿孔并与冷却条42连接。
其中,冷却板4包括框架41和设于框架41内的若干根冷却条42,优选10根冷却条42,冷却条42与冷却液管路连通,保证冷却液在冷却条42内循环流动,提高冷却效率,同时可根据实际需要控制冷却条42内的冷却液流量控制冷却条42的冷却效果。
进一步的,每根冷却条42对应一个适配的旋转机构,旋转机构包括驱动件5和转轴7,驱动件5为电机或气缸,优选气缸,成本低,易控制。
其中,气缸的驱动端与转轴7的一端连接,转轴7的另一端与第二密封旋转装置8可旋转连接,第一密封旋转装置6与第二密封旋转装置8优选的为磁流体轴承。
进一步的,框架41上设有穿孔,冷却条42设有贯穿孔,转轴7依次穿过框架41一端的穿孔和冷却条42的贯穿孔,最后从框架41另一端的穿孔穿出,保证转轴7在穿孔内可自由旋转,同时,转轴7与贯穿孔套接实现过盈配合,使转轴7带动冷却条42同步转动,框架41支撑转轴7和冷却条42,保证正常工作。冷却条42无贯穿孔时,可以将转轴7与冷却条42焊接成一体,从而使转轴7带动冷却条42同步转动。
其中,框架41和转轴7的材质均为耐腐蚀的不锈钢材质,优选SST316L型号。
如图1所示,本发明实施例提供一种真空镀膜设备,包括腔室1、用以加热基片2的加热灯管3和冷却构件,驱动件5安装在腔室1的侧壁外侧,冷却板4安装在加热灯管3与腔室1的底板之间。
进一步的,加热灯管3安装于基片2的下侧,作为热源以加热基片2,冷却板4安装在加热灯管3与腔室底板之间,用以冷却基片2,加热灯管3优选红外灯管加热,耗能低,加热效率高,框架41通过支撑件固定在腔室1的底板上侧。
其中,转轴7的一端通过第一密封旋转装置6穿过腔室1的侧壁与驱动件5连接,气缸的驱动端通过第一密封旋转装置6安装在腔室1的侧壁外侧,第一密封旋转装置6与腔室1的侧壁密封适配,保证腔室1的整体密封性;转轴7的另一端通过第二密封旋转装置8可旋转的安装在对称侧的腔室1的侧壁上,第一密封旋转装置6与第二密封旋转装置8均为磁流体轴承,保证转轴7与腔室1的侧壁密封连接,提高设备的密封性能。
本发明实施例的操作步骤如下:
当基片需要降温时,使冷却条与基片平行,冷却液循环流动,可根据需要加大冷却液的流量,以提高冷却效率;
当基片需要加热时,气缸驱动转轴带动冷却条转动90度,使冷却条与基片垂直,并降低冷却液流量,使红外加热管充分对基片加热,提高加热效率。
本发明提供的一种冷却构件,旋转机构驱动冷却板内的冷却条转动,冷却状态,冷却条与腔室内的基片平行,加大冷却面积,提高冷却效率;非冷却状态,驱动件驱动冷却条转动,使冷却条与腔室内的基片垂直,减小冷却面积,提高加热效率,实现工艺温度的快速切换,降低工艺生产时间,提高设备产能,节约能源消耗。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (10)

1.一种冷却构件,其特征在于,包括冷却板和旋转机构,所述冷却板包括若干根冷却条,所述冷却条与冷却液管路连通,所述旋转机构包括驱动件和转轴,所述驱动件与所述转轴的一端连接,所述转轴的另一端与所述冷却条连接。
2.如权利要求1所述的冷却构件,其特征在于,所述冷却板还包括框架,所述冷却条设于所述框架内,所述框架上设有用以所述转轴穿过的穿孔。
3.如权利要求1所述的冷却构件,其特征在于,所述冷却条设有与所述转轴适配的贯穿孔,所述冷却条与所述转轴同步转动。
4.如权利要求1所述的冷却构件,其特征在于,所述驱动件为电机或气缸。
5.如权利要求2所述的冷却构件,其特征在于,所述框架与所述转轴的材质均为不锈钢材质。
6.一种真空镀膜设备,其特征在于,包括腔室、用以加热基片的加热灯管和权利要求1-5任一项所述的冷却构件,所述驱动件安装在所述腔室的侧壁外侧,所述冷却板安装在所述加热灯管与所述腔室的底板之间。
7.如权利要求6所述的真空镀膜设备,其特征在于,所述转轴的一端通过第一密封旋转装置穿过腔室的侧壁与所述驱动件连接,所述转轴的另一端通过第二密封旋转装置可旋转的安装在对称侧的腔室侧壁上。
8.如权利要求7所述的真空镀膜设备,其特征在于,所述第一密封旋转装置与所述第二密封旋转装置均为磁流体轴承。
9.如权利要求6所述的真空镀膜设备,其特征在于,所述框架通过支撑件固定在所述腔室的底板上侧。
10.如权利要求6所述的真空镀膜设备,其特征在于,所述加热灯管为红外灯管,所述红外灯管安装于基片的下侧。
CN201711353205.8A 2017-12-15 2017-12-15 一种冷却构件及真空镀膜设备 Pending CN107841727A (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201711353205.8A CN107841727A (zh) 2017-12-15 2017-12-15 一种冷却构件及真空镀膜设备
PCT/CN2018/092388 WO2019114237A1 (zh) 2017-12-15 2018-06-22 冷却构件及真空镀膜设备
JP2018123296A JP2019108606A (ja) 2017-12-15 2018-06-28 冷却部材及び真空蒸着装置
TW107122520A TWI662143B (zh) 2017-12-15 2018-06-29 冷卻構件及真空鍍膜設備
KR1020180075880A KR20190072389A (ko) 2017-12-15 2018-06-29 냉각부재 및 진공코팅장비
US16/022,733 US20190189473A1 (en) 2017-12-15 2018-06-29 Cooling Member and Vacuum Coating Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711353205.8A CN107841727A (zh) 2017-12-15 2017-12-15 一种冷却构件及真空镀膜设备

Publications (1)

Publication Number Publication Date
CN107841727A true CN107841727A (zh) 2018-03-27

Family

ID=61663720

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711353205.8A Pending CN107841727A (zh) 2017-12-15 2017-12-15 一种冷却构件及真空镀膜设备

Country Status (6)

Country Link
US (1) US20190189473A1 (zh)
JP (1) JP2019108606A (zh)
KR (1) KR20190072389A (zh)
CN (1) CN107841727A (zh)
TW (1) TWI662143B (zh)
WO (1) WO2019114237A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019114237A1 (zh) * 2017-12-15 2019-06-20 北京创昱科技有限公司 冷却构件及真空镀膜设备
CN110142272A (zh) * 2019-05-07 2019-08-20 德淮半导体有限公司 一种整流板和槽式清洗机

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7422531B2 (ja) * 2019-12-17 2024-01-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN112251732B (zh) * 2020-08-31 2023-02-17 广东鼎泰机器人科技有限公司 一种涂层机的载料装置
CN114369797A (zh) * 2022-01-14 2022-04-19 江苏宇狮薄膜科技有限公司 一种镀膜机

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101665913A (zh) * 2009-09-30 2010-03-10 东莞宏威数码机械有限公司 真空镀膜用处理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768952B2 (ja) * 1988-08-04 1998-06-25 忠弘 大見 金属酸化処理装置及び金属酸化処理方法
US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
JP4625183B2 (ja) * 1998-11-20 2011-02-02 ステアーグ アール ティ ピー システムズ インコーポレイテッド 半導体ウェハのための急速加熱及び冷却装置
US6689221B2 (en) * 2000-12-04 2004-02-10 Applied Materials, Inc. Cooling gas delivery system for a rotatable semiconductor substrate support assembly
US6824343B2 (en) * 2002-02-22 2004-11-30 Applied Materials, Inc. Substrate support
US6783630B2 (en) * 2002-08-27 2004-08-31 Axcelis Technologies, Inc. Segmented cold plate for rapid thermal processing (RTP) tool for conduction cooling
JP4380236B2 (ja) * 2003-06-23 2009-12-09 東京エレクトロン株式会社 載置台及び熱処理装置
JP4417221B2 (ja) * 2004-10-18 2010-02-17 株式会社フューチャービジョン 基板冷却装置
JP4906425B2 (ja) * 2006-07-26 2012-03-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5276388B2 (ja) * 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
US8274017B2 (en) * 2009-12-18 2012-09-25 Applied Materials, Inc. Multifunctional heater/chiller pedestal for wide range wafer temperature control
WO2013076966A1 (ja) * 2011-11-22 2013-05-30 株式会社神戸製鋼所 プラズマ発生源及びこれを備えた真空プラズマ処理装置
CN104878370A (zh) * 2015-05-29 2015-09-02 沈阳拓荆科技有限公司 一种分体式可控温加热盘结构
US10415137B2 (en) * 2016-01-01 2019-09-17 Applied Materials, Inc. Non-metallic thermal CVD/ALD Gas Injector and Purge Systems
CN107841727A (zh) * 2017-12-15 2018-03-27 北京创昱科技有限公司 一种冷却构件及真空镀膜设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101665913A (zh) * 2009-09-30 2010-03-10 东莞宏威数码机械有限公司 真空镀膜用处理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019114237A1 (zh) * 2017-12-15 2019-06-20 北京创昱科技有限公司 冷却构件及真空镀膜设备
CN110142272A (zh) * 2019-05-07 2019-08-20 德淮半导体有限公司 一种整流板和槽式清洗机

Also Published As

Publication number Publication date
KR20190072389A (ko) 2019-06-25
US20190189473A1 (en) 2019-06-20
JP2019108606A (ja) 2019-07-04
TWI662143B (zh) 2019-06-11
WO2019114237A1 (zh) 2019-06-20
TW201928095A (zh) 2019-07-16

Similar Documents

Publication Publication Date Title
CN107841727A (zh) 一种冷却构件及真空镀膜设备
WO2017221631A1 (ja) 保持装置
JP3610275B2 (ja) 半導体製造工程設備用熱電冷却温度調節装置
JP5072958B2 (ja) マルチスロットロードロックチャンバおよび操作方法
CN101495829B (zh) 带有管中的加热器的负载锁定室
WO2003033973A1 (fr) Dispositif de circulation de fluide chauffant et equipement de traitement thermique faisant appel audit dispositif
US20120264072A1 (en) Method and apparatus for performing reactive thermal treatment of thin film pv material
TW200932965A (en) Apparatus for growing single crystal and process for growing single crystal
US20090126378A1 (en) Chiller of etch equipment for semiconductor processing
CN103266301B (zh) 可调短距离快速升降温蒸镀炉及其制造方法
CN207828408U (zh) 一种冷却构件及真空镀膜设备
JP4742431B2 (ja) 熱処理装置
JP4618288B2 (ja) 熱媒体循環装置及びこれを用いた熱処理装置
KR101795439B1 (ko) 인라인 스퍼터링 시스템
KR102359376B1 (ko) 기판의 열처리 오븐
JPH07135182A (ja) 熱処理装置
KR101544004B1 (ko) 개선된 기판 열처리 챔버용 도어, 및 이를 구비한 기판 열처리 챔버 및 장치
KR101473176B1 (ko) 열처리 장치
CN109423627B (zh) 圆盘类零件一次性全表面气相沉积炉
CN220116602U (zh) 一种硅钢高温退火炉
KR101442208B1 (ko) 열처리 시스템과 열처리 방법 및 그를 이용한 cigs 태양전지의 제조 방법
CN220450294U (zh) 一种用于沉积设备的调温装置
JP6925377B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
CN216129662U (zh) 石墨烯金属复合粉体生长炉
CN212876505U (zh) 一种新型平板式液晶显示颗粒炉智能控制板

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital

Applicant after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd.

Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital

Applicant before: Beijing Chuangyu Technology Co.,Ltd.

Address after: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital

Applicant after: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd.

Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital

Applicant before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY (BEIJING) Co.,Ltd.

CB02 Change of applicant information
TA01 Transfer of patent application right

Effective date of registration: 20210203

Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208

Applicant after: Zishi Energy Co.,Ltd.

Address before: 102209 Beijing city Changping District town Beiqijia Hongfu Pioneer Park No. 15 hospital

Applicant before: DONGTAI HI-TECH EQUIPMENT TECHNOLOGY Co.,Ltd.

TA01 Transfer of patent application right