JP4895275B2 - 基板処理装置用の部品及び皮膜形成方法 - Google Patents
基板処理装置用の部品及び皮膜形成方法 Download PDFInfo
- Publication number
- JP4895275B2 JP4895275B2 JP2006265149A JP2006265149A JP4895275B2 JP 4895275 B2 JP4895275 B2 JP 4895275B2 JP 2006265149 A JP2006265149 A JP 2006265149A JP 2006265149 A JP2006265149 A JP 2006265149A JP 4895275 B2 JP4895275 B2 JP 4895275B2
- Authority
- JP
- Japan
- Prior art keywords
- component
- substrate processing
- processing apparatus
- film
- cooling plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 57
- 238000000034 method Methods 0.000 title claims description 36
- 238000001816 cooling Methods 0.000 claims description 50
- 230000008569 process Effects 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 238000009835 boiling Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 12
- 150000007524 organic acids Chemical class 0.000 claims description 10
- 238000007743 anodising Methods 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 42
- 239000011148 porous material Substances 0.000 description 39
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 33
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- 229910052782 aluminium Inorganic materials 0.000 description 20
- 239000000243 solution Substances 0.000 description 20
- 230000035882 stress Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 14
- 235000006408 oxalic acid Nutrition 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 238000009832 plasma treatment Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
クーリングプレート36の表面に図6の処理によってアルマイト皮膜57を形成し、該クーリングプレート36を基板処理装置10に組み込んだ。次いで、熱酸化膜を有するウエハWを準備し、基板処理装置10によって該ウエハWにHARC処理を施した。このHARC処理では、チャンバ11内の圧力が3.33Pa(25mTorr)に設定され、天井電極板35には3300Wの高周波電力が供給され、サセプタ12には3800Wの高周波電力が供給され、処理空間SにC5F8ガス、Arガス及びO2ガスからなる処理ガス(C5F8ガス、Arガス及びO2ガスの流量比は29/750/47)が供給され、吸着面及びウエハWの裏面の間隙において、ウエハWの中央部及び周縁部にはそれぞれ2.00MPa(15Torr)のHeガス及び5.33MPa(40Torr)のHeガスが供給され、チャンバ11の内壁において、天井部、側壁部、底面部の温度はそれぞれ60℃、60℃、20℃に設定され、この状態が60秒間に亘って維持された。そして、HARC処理後、ウエハWの熱酸化膜のエッチレートを算出し、また、基板処理装置10からクーリングプレート36を取り外してアルマイト皮膜57の状態を確認した。
クーリングプレート36の表面に硫酸溶液を用いた陽極酸化処理及び水蒸気を用いた封孔処理によってアルマイト皮膜48を形成し、該クーリングプレート36を基板処理装置10に組み込んだ。次いで、熱酸化膜を有するウエハWを準備し、基板処理装置10によって該ウエハWに実施例と同じ条件のHARC処理を施した。そして、HARC処理後、ウエハWの熱酸化膜のエッチレートを算出し、また、基板処理装置10からクーリングプレート36を取り外してアルマイト皮膜48の状態を確認した。
W ウエハ
10 基板処理装置
11 チャンバ
36 クーリングプレート
37 上部電極体
48,57 アルマイト皮膜
49,56 アルミニウム基材
50 バリア層
51 ポーラス層
52,58 セル
53,59 ポア
55 結晶柱
60,61,63 酸化アルミニウム
Claims (4)
- 基板にプラズマ処理を施す基板処理装置用の部品において、
前記部品をなす基材は主成分がJIS規格のA6061合金であり、
前記部品を直流電源の陽極に接続し且つ有機酸を主成分とする溶液中に浸漬する陽極酸化処理によって前記部品の表面に形成された皮膜を備え、
前記皮膜には沸騰水中に5分〜10分に亘って浸漬する半封孔処理が施されていることを特徴とする基板処理装置用の部品。 - 前記部品の表面は少なくとも1つの穴部又は凹部の表面であることを特徴とする請求項1記載の基板処理装置用の部品。
- 前記基板処理装置用の部品は円板状のクーリングプレートであり、該クーリングプレートは複数の貫通孔を有することを特徴とする請求項1又は2に記載の基板処理装置用の部品。
- 基板にプラズマ処理を施す基板処理装置用の部品の皮膜形成方法において、
前記部品をなす基材は主成分がJIS規格のA6061合金であり、
前記部品を直流電源の陽極に接続し且つ有機酸を主成分とする溶液中に浸漬する陽極酸化ステップと、
沸騰水中に前記部品を5分〜10分に亘って浸漬する半封孔ステップとを有することを特徴とする皮膜形成方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006265149A JP4895275B2 (ja) | 2006-09-28 | 2006-09-28 | 基板処理装置用の部品及び皮膜形成方法 |
CN2007101418397A CN101153407B (zh) | 2006-09-28 | 2007-08-14 | 基板处理装置用的部件及保护膜形成方法 |
KR1020070097315A KR100924852B1 (ko) | 2006-09-28 | 2007-09-27 | 기판 처리 장치용 부품 및 피막 형성 방법 |
US11/862,720 US20080105203A1 (en) | 2006-09-28 | 2007-09-27 | Component for substrate processing apparatus and method of forming film on the component |
TW096136038A TWI439575B (zh) | 2006-09-28 | 2007-09-27 | A substrate processing device, and a film forming method |
US13/436,079 US20120186985A1 (en) | 2006-09-28 | 2012-03-30 | Component for substrate processing apparatus and method of forming film on the component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006265149A JP4895275B2 (ja) | 2006-09-28 | 2006-09-28 | 基板処理装置用の部品及び皮膜形成方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011254336A Division JP5336570B2 (ja) | 2011-11-21 | 2011-11-21 | ガス導入装置及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008081815A JP2008081815A (ja) | 2008-04-10 |
JP4895275B2 true JP4895275B2 (ja) | 2012-03-14 |
Family
ID=39255286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006265149A Active JP4895275B2 (ja) | 2006-09-28 | 2006-09-28 | 基板処理装置用の部品及び皮膜形成方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4895275B2 (ja) |
KR (1) | KR100924852B1 (ja) |
CN (1) | CN101153407B (ja) |
TW (1) | TWI439575B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5666118B2 (ja) * | 2008-10-10 | 2015-02-12 | 旭化成イーマテリアルズ株式会社 | ペリクル用支持枠の製造方法 |
JP4980455B2 (ja) * | 2010-02-08 | 2012-07-18 | 富士フイルム株式会社 | 絶縁層付金属基板の製造方法、半導体装置の製造方法、太陽電池の製造方法、電子回路の製造方法、および発光素子の製造方法 |
JP5336570B2 (ja) * | 2011-11-21 | 2013-11-06 | 東京エレクトロン株式会社 | ガス導入装置及び基板処理装置 |
JP6119483B2 (ja) * | 2013-07-26 | 2017-04-26 | アイシン精機株式会社 | パーソナルビークル |
JP6439655B2 (ja) * | 2015-11-04 | 2018-12-19 | トヨタ自動車株式会社 | ガスタンク部材の製造方法 |
CN106498469A (zh) * | 2016-09-30 | 2017-03-15 | 北京小米移动软件有限公司 | 金属壳的制造方法、金属壳及终端 |
CN107217284B (zh) * | 2017-06-02 | 2019-07-26 | 中国航发南方工业有限公司 | 深孔铝件硬质阳极氧化方法及其制作的深孔铝件 |
CN109183111B (zh) * | 2018-08-03 | 2021-02-09 | 昆山品钰康机电设备有限公司 | 一种汽车内外装饰用铝合金的表面处理工艺 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2654991B2 (ja) * | 1989-07-13 | 1997-09-17 | ワイケイケイ株式会社 | アルミニウム材の多色表面処理方法 |
JPH03150155A (ja) * | 1989-11-08 | 1991-06-26 | Sankyo Alum Ind Co Ltd | アルミニウムと繊維強化プラスチックとの複合材の製造方法 |
JP2737649B2 (ja) * | 1994-04-26 | 1998-04-08 | 日本電気株式会社 | 電子写真用感光体 |
JPH10130884A (ja) * | 1996-10-25 | 1998-05-19 | Nagayama Kogyosho:Kk | 耐熱性陽極酸化皮膜の処理方法 |
JPH11229185A (ja) * | 1998-02-13 | 1999-08-24 | Kobe Steel Ltd | 耐熱割れ性および耐食性に優れたAl材料 |
US7780786B2 (en) * | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
KR20050095846A (ko) * | 2003-01-28 | 2005-10-04 | 토소가부시키가이샤 | 내식성 부재 및 그 제조 방법 |
JP2004292887A (ja) * | 2003-03-26 | 2004-10-21 | Tokyo Electron Ltd | プラズマ処理容器内部材の製造方法、およびそれにより製造されたプラズマ処理容器内部材 |
-
2006
- 2006-09-28 JP JP2006265149A patent/JP4895275B2/ja active Active
-
2007
- 2007-08-14 CN CN2007101418397A patent/CN101153407B/zh not_active Expired - Fee Related
- 2007-09-27 TW TW096136038A patent/TWI439575B/zh active
- 2007-09-27 KR KR1020070097315A patent/KR100924852B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN101153407A (zh) | 2008-04-02 |
TW200825210A (en) | 2008-06-16 |
KR20080029839A (ko) | 2008-04-03 |
CN101153407B (zh) | 2011-07-20 |
JP2008081815A (ja) | 2008-04-10 |
TWI439575B (zh) | 2014-06-01 |
KR100924852B1 (ko) | 2009-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4895275B2 (ja) | 基板処理装置用の部品及び皮膜形成方法 | |
JP5693807B2 (ja) | 基板処理装置用の部品及び皮膜形成方法 | |
US20120186985A1 (en) | Component for substrate processing apparatus and method of forming film on the component | |
CN100418187C (zh) | 等离子体处理装置、环形部件和等离子体处理方法 | |
KR100299569B1 (ko) | 알루미늄부재의표면처리방법및플라즈마처리장치 | |
JP4486372B2 (ja) | プラズマ処理装置 | |
JP4987911B2 (ja) | プラズマ処理容器内部材 | |
KR102289801B1 (ko) | 파티클 발생 억제 방법 및 진공 장치 | |
JP2004190136A (ja) | プラズマ処理容器内部材 | |
US20160189988A1 (en) | Evacuation method and vacuum processing apparatus | |
JP5336570B2 (ja) | ガス導入装置及び基板処理装置 | |
TWI424137B (zh) | Vacuum pumping method | |
JP2016207788A (ja) | 上部電極の表面処理方法、プラズマ処理装置及び上部電極 | |
JPH05114582A (ja) | 真空処理装置 | |
JP2020205382A (ja) | 基板処理装置、基板処理システム及び基板搬送方法 | |
JP6956696B2 (ja) | パーティクル発生抑制方法及び真空装置 | |
JP2006339678A (ja) | プラズマ処理装置及び電極部材 | |
JP4773735B2 (ja) | 真空容器の水分除去方法、該方法を実行するためのプログラム、及び記憶媒体 | |
US20040000375A1 (en) | Plasma etch chamber equipped with multi-layer insert ring | |
JP7445408B2 (ja) | 基板処理装置及び基板処理装置の立ち上げまたはメンテナンス方法 | |
KR20070031168A (ko) | 반도체 제조장치의 챔버 | |
JP2010050405A (ja) | 真空処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090827 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110825 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110920 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4895275 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150106 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |