JP4875936B2 - 異物・欠陥検出方法および異物・欠陥検査装置 - Google Patents

異物・欠陥検出方法および異物・欠陥検査装置 Download PDF

Info

Publication number
JP4875936B2
JP4875936B2 JP2006187351A JP2006187351A JP4875936B2 JP 4875936 B2 JP4875936 B2 JP 4875936B2 JP 2006187351 A JP2006187351 A JP 2006187351A JP 2006187351 A JP2006187351 A JP 2006187351A JP 4875936 B2 JP4875936 B2 JP 4875936B2
Authority
JP
Japan
Prior art keywords
illumination spot
illuminance distribution
inspection
digital data
illumination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006187351A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008014849A (ja
JP2008014849A5 (enExample
Inventor
孝裕 富樫
繁 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2006187351A priority Critical patent/JP4875936B2/ja
Priority to US11/822,330 priority patent/US7456948B2/en
Publication of JP2008014849A publication Critical patent/JP2008014849A/ja
Priority to US12/266,079 priority patent/US7619729B2/en
Publication of JP2008014849A5 publication Critical patent/JP2008014849A5/ja
Priority to US12/574,185 priority patent/US8094298B2/en
Application granted granted Critical
Publication of JP4875936B2 publication Critical patent/JP4875936B2/ja
Priority to US13/743,315 priority patent/USRE44977E1/en
Priority to US13/743,245 priority patent/USRE44840E1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8861—Determining coordinates of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G01N2021/8874—Taking dimensions of defect into account
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2006187351A 2006-07-07 2006-07-07 異物・欠陥検出方法および異物・欠陥検査装置 Expired - Fee Related JP4875936B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006187351A JP4875936B2 (ja) 2006-07-07 2006-07-07 異物・欠陥検出方法および異物・欠陥検査装置
US11/822,330 US7456948B2 (en) 2006-07-07 2007-07-05 Method for detecting particles and defects and inspection equipment thereof
US12/266,079 US7619729B2 (en) 2006-07-07 2008-11-06 Method for detecting particles and defects and inspection equipment thereof
US12/574,185 US8094298B2 (en) 2006-07-07 2009-10-06 Method for detecting particles and defects and inspection equipment thereof
US13/743,315 USRE44977E1 (en) 2006-07-07 2013-01-16 Method for detecting particles and defects and inspection equipment thereof
US13/743,245 USRE44840E1 (en) 2006-07-07 2013-01-16 Method for detecting particles and defects and inspection equipment thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006187351A JP4875936B2 (ja) 2006-07-07 2006-07-07 異物・欠陥検出方法および異物・欠陥検査装置

Publications (3)

Publication Number Publication Date
JP2008014849A JP2008014849A (ja) 2008-01-24
JP2008014849A5 JP2008014849A5 (enExample) 2009-02-19
JP4875936B2 true JP4875936B2 (ja) 2012-02-15

Family

ID=38918830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006187351A Expired - Fee Related JP4875936B2 (ja) 2006-07-07 2006-07-07 異物・欠陥検出方法および異物・欠陥検査装置

Country Status (2)

Country Link
US (5) US7456948B2 (enExample)
JP (1) JP4875936B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4699891B2 (ja) * 2005-12-14 2011-06-15 シャープ株式会社 半導体装置及び半導体装置の外観検査方法
JP4959225B2 (ja) * 2006-05-17 2012-06-20 株式会社日立ハイテクノロジーズ 光学式検査方法及び光学式検査装置
JP5279992B2 (ja) * 2006-07-13 2013-09-04 株式会社日立ハイテクノロジーズ 表面検査方法及び装置
JP2008032582A (ja) * 2006-07-31 2008-02-14 Hitachi High-Technologies Corp 異物・欠陥検査装置および異物欠陥・検査方法
JP5156413B2 (ja) * 2008-02-01 2013-03-06 株式会社日立ハイテクノロジーズ 欠陥検査方法及び欠陥検査装置
JP2009194107A (ja) * 2008-02-13 2009-08-27 Canon Inc 有効光源形状のデータベースの生成方法、光学像の算出方法、プログラム、露光方法及びデバイス製造方法
JP2009236791A (ja) 2008-03-28 2009-10-15 Hitachi High-Technologies Corp 欠陥検査方法及び欠陥検査装置
JP5406677B2 (ja) * 2009-01-26 2014-02-05 株式会社日立ハイテクノロジーズ 暗視野欠陥検査方法及び暗視野欠陥検査装置
JP5331586B2 (ja) * 2009-06-18 2013-10-30 株式会社日立ハイテクノロジーズ 欠陥検査装置および検査方法
US8767069B2 (en) * 2010-06-30 2014-07-01 Luminex Corporation Apparatus, system, and method for increasing measurement accuracy in a particle imaging device using light distribution
JP2012137350A (ja) * 2010-12-27 2012-07-19 Hitachi High-Technologies Corp 欠陥検査方法および欠陥検査装置
JP5637841B2 (ja) * 2010-12-27 2014-12-10 株式会社日立ハイテクノロジーズ 検査装置
CN102642155B (zh) * 2012-05-02 2013-12-11 哈尔滨工业大学 一种基于图像辅助的微小零件回转调心方法
JP5686394B1 (ja) * 2014-04-11 2015-03-18 レーザーテック株式会社 ペリクル検査装置
CN107407552B (zh) * 2015-03-06 2019-11-12 株式会社富士 识别装置及识别方法
CN105203383B (zh) * 2015-09-08 2018-08-28 西宁特殊钢股份有限公司 一种简单可行的发蓝断口检验方法
DE102020102419A1 (de) * 2020-01-31 2021-08-05 Carl Zeiss Microscopy Gmbh Partikelanalyse mit Lichtmikroskop und Mehrpixelpolarisationsfilter
US11544838B2 (en) * 2020-03-21 2023-01-03 Kla Corporation Systems and methods of high-resolution review for semiconductor inspection in backend and wafer level packaging
DE102021205001B4 (de) * 2021-05-18 2023-07-27 Carl Zeiss Microscopy Gmbh Verfahren zum Positionieren von Objekten in einem Teilchenstrahlmikroskop mithilfe einer flexiblen Teilchenstrahlschranke sowie Computerprogrammprodukt
KR102804207B1 (ko) * 2022-10-04 2025-05-09 세메스 주식회사 기판 검사 장치 및 방법

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129547B (en) * 1982-11-02 1986-05-21 Cambridge Instr Ltd Reticle inspection
DE3475566D1 (en) * 1984-05-14 1989-01-12 Ibm Deutschland Method and device for the inspection of surfaces
US4902131A (en) * 1985-03-28 1990-02-20 Kabushiki Kaisha Toshiba Surface inspection method and apparatus therefor
JPS62266444A (ja) * 1986-05-15 1987-11-19 Toshiba Corp 表面検査装置
US4952058A (en) * 1987-04-27 1990-08-28 Hitach, Ltd. Method and apparatus for detecting abnormal patterns
JPH0820371B2 (ja) * 1988-01-21 1996-03-04 株式会社ニコン 欠陥検査装置及び欠陥検査方法
US5249216B1 (en) * 1989-10-19 1996-11-05 Sumitomo Electric Industries Total reflection x-ray fluorescence apparatus
JP2757545B2 (ja) * 1990-07-27 1998-05-25 大日本スクリーン製造 株式会社 複数の画像読取りシステム相互の位置誤差補償方法
ATE169440T1 (de) * 1990-09-21 1998-08-15 Canon Kk Abdruckbewertungsvorrichtung
JPH04177111A (ja) * 1990-11-13 1992-06-24 Mitsubishi Electric Corp 位相シフトマスク検査装置
JP2671241B2 (ja) * 1990-12-27 1997-10-29 日立電子エンジニアリング株式会社 ガラス板の異物検出装置
US5410400A (en) * 1991-06-26 1995-04-25 Hitachi, Ltd. Foreign particle inspection apparatus
US5377001A (en) * 1991-07-20 1994-12-27 Tet Techno Trust Investment Settlement Apparatus for surface inspection
CH685650A5 (de) * 1991-07-20 1995-08-31 Tencor Instruments Einrichtung für Oberflächeninspektionen.
US5377002A (en) * 1991-07-20 1994-12-27 Tet Techno Trust Investment Settlement Apparatus for surface inspections
US5436464A (en) * 1992-04-13 1995-07-25 Nikon Corporation Foreign particle inspecting method and apparatus with correction for pellicle transmittance
US5486919A (en) * 1992-04-27 1996-01-23 Canon Kabushiki Kaisha Inspection method and apparatus for inspecting a particle, if any, on a substrate having a pattern
JPH06242012A (ja) * 1993-02-16 1994-09-02 Toshiba Corp 異物検査装置
JP3137160B2 (ja) * 1994-04-01 2001-02-19 日立電子エンジニアリング株式会社 ウエハの位置ズレ補正方法
JPH08201308A (ja) 1995-01-31 1996-08-09 Toyota Motor Corp 製品の表面欠陥検出方法およびその装置
JPH08234413A (ja) * 1995-02-24 1996-09-13 Mitsubishi Electric Corp フォトマスクパターン欠陥検査装置及びフォトマスクパターン欠陥検査方法
US5903342A (en) * 1995-04-10 1999-05-11 Hitachi Electronics Engineering, Co., Ltd. Inspection method and device of wafer surface
JP3545517B2 (ja) * 1995-10-11 2004-07-21 コニカミノルタホールディングス株式会社 放射線画像情報読取装置
US5798829A (en) * 1996-03-05 1998-08-25 Kla-Tencor Corporation Single laser bright field and dark field system for detecting anomalies of a sample
AU3376597A (en) * 1996-06-04 1998-01-05 Tencor Instruments Optical scanning system for surface inspection
US5883714A (en) * 1996-10-07 1999-03-16 Phase Metrics Method and apparatus for detecting defects on a disk using interferometric analysis on reflected light
US5963726A (en) * 1998-03-20 1999-10-05 National Instruments Corporation Instrumentation system and method including an improved driver software architecture
JP4089798B2 (ja) * 1998-04-13 2008-05-28 株式会社トプコン 表面検査装置
US6618136B1 (en) * 1998-09-07 2003-09-09 Minolta Co., Ltd. Method and apparatus for visually inspecting transparent body and translucent body
US6122047A (en) * 1999-01-14 2000-09-19 Ade Optical Systems Corporation Methods and apparatus for identifying the material of a particle occurring on the surface of a substrate
US6529270B1 (en) * 1999-03-31 2003-03-04 Ade Optical Systems Corporation Apparatus and method for detecting defects in the surface of a workpiece
JP2001004347A (ja) * 1999-06-22 2001-01-12 Mitsubishi Electric Corp 欠陥検査装置
US6590645B1 (en) * 2000-05-04 2003-07-08 Kla-Tencor Corporation System and methods for classifying anomalies of sample surfaces
JP3671822B2 (ja) * 2000-07-26 2005-07-13 株式会社日立製作所 欠陥検査方法および欠陥検査システム
JP2003098111A (ja) * 2000-09-21 2003-04-03 Hitachi Ltd 欠陥検査方法およびその装置
JP2002098645A (ja) * 2000-09-26 2002-04-05 Hitachi Electronics Eng Co Ltd 基板の表面検査装置及び表面検査方法
JP2002181725A (ja) * 2000-12-11 2002-06-26 Mitsubishi Electric Corp 微小異物解析方法、分析装置、半導体装置の製造方法および液晶表示装置の製造方法
JP3881530B2 (ja) * 2000-12-27 2007-02-14 株式会社日立ハイテクノロジーズ 表面欠陥検査装置
JP2002228596A (ja) * 2001-01-31 2002-08-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの測定方法及び半導体ウェーハの製造方法
JP2002228428A (ja) * 2001-02-02 2002-08-14 Nikon Corp 異物検出装置及び露光装置
JP2004271421A (ja) * 2003-03-11 2004-09-30 Nikon Corp 異物検査装置及び方法並びに露光装置
US7068363B2 (en) * 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US7433031B2 (en) * 2003-10-29 2008-10-07 Core Tech Optical, Inc. Defect review system with 2D scanning and a ring detector
JP4908925B2 (ja) * 2006-02-08 2012-04-04 株式会社日立ハイテクノロジーズ ウェハ表面欠陥検査装置およびその方法
JP5147202B2 (ja) * 2006-06-30 2013-02-20 株式会社日立ハイテクノロジーズ 光学式欠陥検査装置
JP4755054B2 (ja) * 2006-09-01 2011-08-24 株式会社日立ハイテクノロジーズ 表面検査方法、及び表面検査装置

Also Published As

Publication number Publication date
USRE44977E1 (en) 2014-07-01
US20100020315A1 (en) 2010-01-28
US20090066941A1 (en) 2009-03-12
JP2008014849A (ja) 2008-01-24
US7456948B2 (en) 2008-11-25
US8094298B2 (en) 2012-01-10
USRE44840E1 (en) 2014-04-15
US7619729B2 (en) 2009-11-17
US20080007725A1 (en) 2008-01-10

Similar Documents

Publication Publication Date Title
JP4875936B2 (ja) 異物・欠陥検出方法および異物・欠陥検査装置
US6810139B2 (en) Pixel based machine for patterned wafers
JP5355922B2 (ja) 欠陥検査装置
JP4908925B2 (ja) ウェハ表面欠陥検査装置およびその方法
JP5732637B2 (ja) ウェハ周縁端の異物検査方法、及び異物検査装置
US7916288B2 (en) Defect inspection method
US20120092656A1 (en) Defect Inspection Method and Defect Inspection Apparatus
JP2009300426A (ja) レチクル欠陥検査装置およびレチクル欠陥検査方法
US8937714B2 (en) Inspecting apparatus and inspecting method
KR20170007337A (ko) 웨이퍼 에지 검출 및 검사
US20160211112A1 (en) Method and Apparatus for Reviewing Defects
US12345661B2 (en) Defect inspection apparatus and defect inspection method
JP2009204387A (ja) 表面検査方法およびそれを用いた検査装置
US9587936B2 (en) Scanning inspection system with angular correction
WO2011036838A1 (ja) 欠陥検査方法及びその装置
JP5319876B2 (ja) 表面検査装置及び表面検査方法
JP2006352122A (ja) チャックに対する光ビームの位置のドリフトを決定する方法およびシステム
WO2018131101A1 (ja) 荷電粒子ビーム装置および光学式検査装置
US20130010290A1 (en) Surface inspection device and surface inspection method
JP2005351845A (ja) 基板検査装置および方法
JP2009156574A (ja) 検査装置及び検査方法
JP2008128770A (ja) レンズ性能検査装置及びレンズ性能検査方法
JP5668113B2 (ja) 欠陥検査装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081224

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110222

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110516

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111128

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141202

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4875936

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees