JP4874996B2 - ポリマー発光ダイオードおよびその製造方法 - Google Patents

ポリマー発光ダイオードおよびその製造方法 Download PDF

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Publication number
JP4874996B2
JP4874996B2 JP2007551775A JP2007551775A JP4874996B2 JP 4874996 B2 JP4874996 B2 JP 4874996B2 JP 2007551775 A JP2007551775 A JP 2007551775A JP 2007551775 A JP2007551775 A JP 2007551775A JP 4874996 B2 JP4874996 B2 JP 4874996B2
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Prior art keywords
electrode
layer
light emitting
ion
charge
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Expired - Fee Related
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JP2007551775A
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English (en)
Japanese (ja)
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JP2008529268A (ja
JP2008529268A5 (enExample
Inventor
エデュアルド イェー メイエル
エリック アー ミューレンカンプ
ラルフ クルト
スティーヴ クリンク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips NV
Koninklijke Philips Electronics NV
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Publication of JP2008529268A publication Critical patent/JP2008529268A/ja
Publication of JP2008529268A5 publication Critical patent/JP2008529268A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/135—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising mobile ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/167—Electron transporting layers between the light-emitting layer and the anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
JP2007551775A 2005-01-21 2006-01-16 ポリマー発光ダイオードおよびその製造方法 Expired - Fee Related JP4874996B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP05100363.0 2005-01-21
EP05100363 2005-01-21
PCT/IB2006/050142 WO2006077514A1 (en) 2005-01-21 2006-01-16 Polymer light-emitting diode and a method of manufacturing it

Publications (3)

Publication Number Publication Date
JP2008529268A JP2008529268A (ja) 2008-07-31
JP2008529268A5 JP2008529268A5 (enExample) 2009-03-05
JP4874996B2 true JP4874996B2 (ja) 2012-02-15

Family

ID=36581485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007551775A Expired - Fee Related JP4874996B2 (ja) 2005-01-21 2006-01-16 ポリマー発光ダイオードおよびその製造方法

Country Status (7)

Country Link
US (1) US7868537B2 (enExample)
EP (1) EP1844503A1 (enExample)
JP (1) JP4874996B2 (enExample)
KR (1) KR20070095430A (enExample)
CN (1) CN100539243C (enExample)
TW (1) TW200703712A (enExample)
WO (1) WO2006077514A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8324614B2 (en) 2007-08-23 2012-12-04 Sri International Electroluminescent devices employing organic cathodes
US8575585B2 (en) * 2009-07-13 2013-11-05 Hewlett-Packard Development Company, L.P. Memristive device
US9299941B2 (en) * 2011-01-13 2016-03-29 Samsung Electronics Co., Ltd. Organic semiconductor device and method of manufacturing the same
KR101860973B1 (ko) 2011-05-25 2018-05-24 오스람 옵토 세미컨덕터스 게엠베하 광전 반도체 칩
KR20140099437A (ko) 2011-08-02 2014-08-12 스미또모 가가꾸 가부시키가이샤 도펀트 주입 층
IN2014CN03096A (enExample) * 2011-10-26 2015-07-03 Koninkl Philips Nv
WO2013173845A1 (en) 2012-05-18 2013-11-21 Sumitomo Chemical Co., Ltd. Multilayer light-emitting electrochemical cell device structures
GB2551501A (en) * 2016-06-17 2017-12-27 Sumitomo Chemical Co Nanoparticles
JP2019057540A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 記憶素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01277824A (ja) * 1988-04-30 1989-11-08 Nippon Seiki Co Ltd 電気化学発光表示装置及びその製造方法
JP2000058907A (ja) * 1998-08-05 2000-02-25 Mitsubishi Chemicals Corp 電気化学的発光素子
JP2004265620A (ja) * 2003-01-09 2004-09-24 Dainippon Ink & Chem Inc 電気化学発光素子およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5682043A (en) * 1994-06-28 1997-10-28 Uniax Corporation Electrochemical light-emitting devices
US5767624A (en) 1996-06-26 1998-06-16 International Business Machines Corporation Light emitting device
DE69834259T2 (de) 1997-03-11 2007-04-26 The Ohio State University Research Foundation, Columbus Bipolare/ac lichtemittierende vorrichtungen mit variabler farbe
WO2007030679A2 (en) * 2005-09-07 2007-03-15 The Regents Of The University Of California Materials for the formation of polymer junction diodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01277824A (ja) * 1988-04-30 1989-11-08 Nippon Seiki Co Ltd 電気化学発光表示装置及びその製造方法
JP2000058907A (ja) * 1998-08-05 2000-02-25 Mitsubishi Chemicals Corp 電気化学的発光素子
JP2004265620A (ja) * 2003-01-09 2004-09-24 Dainippon Ink & Chem Inc 電気化学発光素子およびその製造方法

Also Published As

Publication number Publication date
WO2006077514A1 (en) 2006-07-27
KR20070095430A (ko) 2007-09-28
JP2008529268A (ja) 2008-07-31
CN100539243C (zh) 2009-09-09
CN101107727A (zh) 2008-01-16
EP1844503A1 (en) 2007-10-17
US20090039766A1 (en) 2009-02-12
US7868537B2 (en) 2011-01-11
TW200703712A (en) 2007-01-16

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