KR20070095430A - 고분자 발광 다이오드 및 그 형성 방법 - Google Patents

고분자 발광 다이오드 및 그 형성 방법 Download PDF

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Publication number
KR20070095430A
KR20070095430A KR1020077018987A KR20077018987A KR20070095430A KR 20070095430 A KR20070095430 A KR 20070095430A KR 1020077018987 A KR1020077018987 A KR 1020077018987A KR 20077018987 A KR20077018987 A KR 20077018987A KR 20070095430 A KR20070095430 A KR 20070095430A
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KR
South Korea
Prior art keywords
electrode
light emitting
layer
charge
ions
Prior art date
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Ceased
Application number
KR1020077018987A
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English (en)
Korean (ko)
Inventor
에두아르트 요트 마이예르
에릭 아. 모이렌캄프
랄프 쿠르트
스테페 클린크
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
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Publication of KR20070095430A publication Critical patent/KR20070095430A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/135—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising mobile ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/167—Electron transporting layers between the light-emitting layer and the anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
KR1020077018987A 2005-01-21 2006-01-16 고분자 발광 다이오드 및 그 형성 방법 Ceased KR20070095430A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05100363.0 2005-01-21
EP05100363 2005-01-21

Publications (1)

Publication Number Publication Date
KR20070095430A true KR20070095430A (ko) 2007-09-28

Family

ID=36581485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077018987A Ceased KR20070095430A (ko) 2005-01-21 2006-01-16 고분자 발광 다이오드 및 그 형성 방법

Country Status (7)

Country Link
US (1) US7868537B2 (enExample)
EP (1) EP1844503A1 (enExample)
JP (1) JP4874996B2 (enExample)
KR (1) KR20070095430A (enExample)
CN (1) CN100539243C (enExample)
TW (1) TW200703712A (enExample)
WO (1) WO2006077514A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8324614B2 (en) 2007-08-23 2012-12-04 Sri International Electroluminescent devices employing organic cathodes
US8575585B2 (en) * 2009-07-13 2013-11-05 Hewlett-Packard Development Company, L.P. Memristive device
US9299941B2 (en) * 2011-01-13 2016-03-29 Samsung Electronics Co., Ltd. Organic semiconductor device and method of manufacturing the same
KR101860973B1 (ko) 2011-05-25 2018-05-24 오스람 옵토 세미컨덕터스 게엠베하 광전 반도체 칩
KR20140099437A (ko) 2011-08-02 2014-08-12 스미또모 가가꾸 가부시키가이샤 도펀트 주입 층
IN2014CN03096A (enExample) * 2011-10-26 2015-07-03 Koninkl Philips Nv
WO2013173845A1 (en) 2012-05-18 2013-11-21 Sumitomo Chemical Co., Ltd. Multilayer light-emitting electrochemical cell device structures
GB2551501A (en) * 2016-06-17 2017-12-27 Sumitomo Chemical Co Nanoparticles
JP2019057540A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 記憶素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750561B2 (ja) * 1988-04-30 1995-05-31 日本精機株式会社 電気化学発光表示装置及びその製造方法
US5682043A (en) * 1994-06-28 1997-10-28 Uniax Corporation Electrochemical light-emitting devices
US5767624A (en) 1996-06-26 1998-06-16 International Business Machines Corporation Light emitting device
DE69834259T2 (de) 1997-03-11 2007-04-26 The Ohio State University Research Foundation, Columbus Bipolare/ac lichtemittierende vorrichtungen mit variabler farbe
JP2000058907A (ja) * 1998-08-05 2000-02-25 Mitsubishi Chemicals Corp 電気化学的発光素子
JP2004265620A (ja) * 2003-01-09 2004-09-24 Dainippon Ink & Chem Inc 電気化学発光素子およびその製造方法
WO2007030679A2 (en) * 2005-09-07 2007-03-15 The Regents Of The University Of California Materials for the formation of polymer junction diodes

Also Published As

Publication number Publication date
WO2006077514A1 (en) 2006-07-27
JP2008529268A (ja) 2008-07-31
JP4874996B2 (ja) 2012-02-15
CN100539243C (zh) 2009-09-09
CN101107727A (zh) 2008-01-16
EP1844503A1 (en) 2007-10-17
US20090039766A1 (en) 2009-02-12
US7868537B2 (en) 2011-01-11
TW200703712A (en) 2007-01-16

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