CN100539243C - 聚合物发光二极管及其制造方法 - Google Patents

聚合物发光二极管及其制造方法 Download PDF

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Publication number
CN100539243C
CN100539243C CNB2006800028886A CN200680002888A CN100539243C CN 100539243 C CN100539243 C CN 100539243C CN B2006800028886 A CNB2006800028886 A CN B2006800028886A CN 200680002888 A CN200680002888 A CN 200680002888A CN 100539243 C CN100539243 C CN 100539243C
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CN
China
Prior art keywords
electrode
ion
layer
light
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2006800028886A
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English (en)
Chinese (zh)
Other versions
CN101107727A (zh
Inventor
E·J·梅杰
E·A·穆伦坎普
R·库特
S·克林克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Publication date
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Publication of CN101107727A publication Critical patent/CN101107727A/zh
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Publication of CN100539243C publication Critical patent/CN100539243C/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/135—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising mobile ions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/157—Hole transporting layers between the light-emitting layer and the cathode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/167—Electron transporting layers between the light-emitting layer and the anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
CNB2006800028886A 2005-01-21 2006-01-16 聚合物发光二极管及其制造方法 Expired - Fee Related CN100539243C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05100363.0 2005-01-21
EP05100363 2005-01-21

Publications (2)

Publication Number Publication Date
CN101107727A CN101107727A (zh) 2008-01-16
CN100539243C true CN100539243C (zh) 2009-09-09

Family

ID=36581485

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006800028886A Expired - Fee Related CN100539243C (zh) 2005-01-21 2006-01-16 聚合物发光二极管及其制造方法

Country Status (7)

Country Link
US (1) US7868537B2 (enExample)
EP (1) EP1844503A1 (enExample)
JP (1) JP4874996B2 (enExample)
KR (1) KR20070095430A (enExample)
CN (1) CN100539243C (enExample)
TW (1) TW200703712A (enExample)
WO (1) WO2006077514A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8324614B2 (en) 2007-08-23 2012-12-04 Sri International Electroluminescent devices employing organic cathodes
US8575585B2 (en) * 2009-07-13 2013-11-05 Hewlett-Packard Development Company, L.P. Memristive device
US9299941B2 (en) * 2011-01-13 2016-03-29 Samsung Electronics Co., Ltd. Organic semiconductor device and method of manufacturing the same
KR101860973B1 (ko) 2011-05-25 2018-05-24 오스람 옵토 세미컨덕터스 게엠베하 광전 반도체 칩
KR20140099437A (ko) 2011-08-02 2014-08-12 스미또모 가가꾸 가부시키가이샤 도펀트 주입 층
IN2014CN03096A (enExample) * 2011-10-26 2015-07-03 Koninkl Philips Nv
WO2013173845A1 (en) 2012-05-18 2013-11-21 Sumitomo Chemical Co., Ltd. Multilayer light-emitting electrochemical cell device structures
GB2551501A (en) * 2016-06-17 2017-12-27 Sumitomo Chemical Co Nanoparticles
JP2019057540A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 記憶素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235414B1 (en) * 1997-03-11 2001-05-22 The Ohio State University Research Foundation Color variable bipolar/AC light-emitting devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750561B2 (ja) * 1988-04-30 1995-05-31 日本精機株式会社 電気化学発光表示装置及びその製造方法
US5682043A (en) * 1994-06-28 1997-10-28 Uniax Corporation Electrochemical light-emitting devices
US5767624A (en) 1996-06-26 1998-06-16 International Business Machines Corporation Light emitting device
JP2000058907A (ja) * 1998-08-05 2000-02-25 Mitsubishi Chemicals Corp 電気化学的発光素子
JP2004265620A (ja) * 2003-01-09 2004-09-24 Dainippon Ink & Chem Inc 電気化学発光素子およびその製造方法
WO2007030679A2 (en) * 2005-09-07 2007-03-15 The Regents Of The University Of California Materials for the formation of polymer junction diodes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6235414B1 (en) * 1997-03-11 2001-05-22 The Ohio State University Research Foundation Color variable bipolar/AC light-emitting devices

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
- Ionic materials to improve charge injection in polymer electroluminescent devices. TAE-WOO LEE ET AL.PROCEEDINGS OF THE SPIE,Vol.vol.4991 . 2003 *
Polymer Light-Emitting Electrochemical Cells With Frozen p-i-nJunction at Room Temperature. GANG YU ET AL.ADVANCED MATERIALS,Vol.vol.10 No.no.5. 1998 *

Also Published As

Publication number Publication date
WO2006077514A1 (en) 2006-07-27
KR20070095430A (ko) 2007-09-28
JP2008529268A (ja) 2008-07-31
JP4874996B2 (ja) 2012-02-15
CN101107727A (zh) 2008-01-16
EP1844503A1 (en) 2007-10-17
US20090039766A1 (en) 2009-02-12
US7868537B2 (en) 2011-01-11
TW200703712A (en) 2007-01-16

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090909

Termination date: 20130116

CF01 Termination of patent right due to non-payment of annual fee