JP4873132B2 - アクチュエータ装置の製造方法 - Google Patents
アクチュエータ装置の製造方法 Download PDFInfo
- Publication number
- JP4873132B2 JP4873132B2 JP2006069803A JP2006069803A JP4873132B2 JP 4873132 B2 JP4873132 B2 JP 4873132B2 JP 2006069803 A JP2006069803 A JP 2006069803A JP 2006069803 A JP2006069803 A JP 2006069803A JP 4873132 B2 JP4873132 B2 JP 4873132B2
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- JP
- Japan
- Prior art keywords
- lower electrode
- film
- piezoelectric
- piezoelectric element
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims description 77
- 238000005530 etching Methods 0.000 claims description 25
- 238000001039 wet etching Methods 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 15
- 238000000605 extraction Methods 0.000 claims 1
- 239000011796 hollow space material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 122
- 239000000463 material Substances 0.000 description 25
- 230000001681 protective effect Effects 0.000 description 21
- 239000012212 insulator Substances 0.000 description 19
- 239000002243 precursor Substances 0.000 description 18
- 238000010304 firing Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000007788 liquid Substances 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000005238 degreasing Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000013212 metal-organic material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 238000000018 DNA microarray Methods 0.000 description 1
- 208000016169 Fish-eye disease Diseases 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
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- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006069803A JP4873132B2 (ja) | 2005-03-24 | 2006-03-14 | アクチュエータ装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005086534 | 2005-03-24 | ||
| JP2005086534 | 2005-03-24 | ||
| JP2006069803A JP4873132B2 (ja) | 2005-03-24 | 2006-03-14 | アクチュエータ装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006297909A JP2006297909A (ja) | 2006-11-02 |
| JP2006297909A5 JP2006297909A5 (enExample) | 2009-04-30 |
| JP4873132B2 true JP4873132B2 (ja) | 2012-02-08 |
Family
ID=37466549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006069803A Expired - Fee Related JP4873132B2 (ja) | 2005-03-24 | 2006-03-14 | アクチュエータ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4873132B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5376107B2 (ja) * | 2007-07-05 | 2013-12-25 | セイコーエプソン株式会社 | 圧電素子及びその製造方法、アクチュエータ装置、液体噴射ヘッド並びに液体噴射装置 |
| JP2009206329A (ja) * | 2008-02-28 | 2009-09-10 | Seiko Epson Corp | 圧電素子およびその製造方法、圧電アクチュエータ、並びに、液体噴射ヘッド |
| JP2010073898A (ja) * | 2008-09-18 | 2010-04-02 | Alps Electric Co Ltd | 圧電素子の製造方法、及びジャイロセンサの製造方法 |
| EP2578408B1 (en) * | 2010-06-03 | 2016-05-18 | Konica Minolta IJ Technologies, Inc. | Inkjet head and method for producing inkjet head |
| JP6024171B2 (ja) * | 2012-04-13 | 2016-11-09 | セイコーエプソン株式会社 | 液体噴射ヘッド及び液体噴射装置並びにアクチュエーター |
| JP6060672B2 (ja) * | 2012-12-20 | 2017-01-18 | セイコーエプソン株式会社 | 液体噴射ヘッド、液体噴射装置、圧電素子及びその製造方法 |
| JP6111724B2 (ja) * | 2013-02-18 | 2017-04-12 | 株式会社リコー | 液滴吐出ヘッドの製造方法 |
| JP5879288B2 (ja) * | 2013-03-06 | 2016-03-08 | 株式会社東芝 | インクジェットヘッドおよびインクジェットヘッドの製造方法 |
| JP6390386B2 (ja) * | 2014-12-01 | 2018-09-19 | ブラザー工業株式会社 | 液体吐出装置、及び、液体吐出装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10211701A (ja) * | 1996-11-06 | 1998-08-11 | Seiko Epson Corp | 圧電体素子を備えたアクチュエータ及びインクジェット式記録ヘッド、並びにこれらの製造方法 |
| JPH10264384A (ja) * | 1997-03-27 | 1998-10-06 | Seiko Epson Corp | インクジェット式記録ヘッド、その製造方法および圧電体素子 |
| JP3102481B1 (ja) * | 1998-06-08 | 2000-10-23 | セイコーエプソン株式会社 | インクジェット式記録ヘッド及びインクジェット式記録装置 |
| WO2003061023A1 (en) * | 2002-01-11 | 2003-07-24 | Ngk Insulators, Ltd. | Piezoelectric/ electrostrictive device and its production method |
-
2006
- 2006-03-14 JP JP2006069803A patent/JP4873132B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006297909A (ja) | 2006-11-02 |
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