JP4869654B2 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
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- JP4869654B2 JP4869654B2 JP2005226865A JP2005226865A JP4869654B2 JP 4869654 B2 JP4869654 B2 JP 4869654B2 JP 2005226865 A JP2005226865 A JP 2005226865A JP 2005226865 A JP2005226865 A JP 2005226865A JP 4869654 B2 JP4869654 B2 JP 4869654B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 23
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 229910052911 sodium silicate Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000005406 washing Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Description
図4は、受光面とは反対の面にのみ電極が形成されている構造の太陽電池で裏面接合型太陽電池と称される。図において、p型シリコン基板1の裏面及び端面にn型拡散層2が形成されており、p型シリコン基板1とn型拡散層2との境界がpn接合3となっている。n型拡散層2と電気的に接続すべく第1電極5が、p型シリコン基板1と電気的に接続すべく第2電極6がそれぞれ裏面に形成されている。なお、反射防止膜4が受光面側に形成されている。
他の方法として、エッチング耐性のある膜を形成・パターニングをした後に、酸、アルカリなどによるウェットエッチングで、又はRIE(Reactive Ion Etching)などのドライエッチングで不要領域の拡散層をエッチングする方法(マスクエッチング)がある。しかしこれらの方法ではプロセス中で、エッチングレジスト塗布、乾燥、レジスト除去、洗浄など、工程数が増え製造コストが増加するという問題がある。
図1は、本発明に係る実施の形態1の表面接合型太陽電池の製造工程を示す図である。最終形状として、p型シリコン基板1の表面及び端面にn型拡散層2が形成されており、p型シリコン基板1とn型拡散層2との境界がpn接合3となっている。n型拡散層2と電気的に接続すべく第1電極5が、p型シリコン基板1と電気的に接続すべく第2電極6がそれぞれ形成されている。なお、反射防止膜4が受光面側に形成されている。
なお、p型シリコン基板の裏面周辺部にあるn型拡散層だけをエッチングするようにしたので、p型シリコン基板端面部の拡散層を発電に寄与する領域として残すことができ、出力電流を大きくすることができる。
図2は、本発明に係る実施の形態2の裏面接合型太陽電池の製造工程を示す図である。最終形状として、p型シリコン基板1の裏面及び端面にn型拡散層2が形成されており、p型シリコン基板1とn型拡散層2との境界がpn接合3となっている。n型拡散層2と電気的に接続すべく第1電極5が、p型シリコン基板1と電気的に接続すべく第2電極6がそれぞれ裏面に形成されている。なお、反射防止膜4が受光面側に形成されている。
2:n型拡散層
3:pn接合
4:反射防止膜
5:第1電極
6:第2電極
10:珪酸ナトリウム(Na2SiO3)
Claims (5)
- 結晶系シリコン基板に前記基板と逆導電型層となる拡散層を形成する拡散層形成ステップと、
前記拡散層の一部上に水を添加した珪酸ナトリウム(Na2SiO3)を塗布する塗布ステップと、
前記水を添加し、4Pa・s以上の粘度にした珪酸ナトリウム(Na 2 SiO 3 )を乾燥させながら前記拡散層をエッチング除去するエッチングステップと、
前記拡散層と電気的に接続する第1の電極及び前記基板と電気的に接続する第2の電極を形成する電極形成ステップと、
を含むことを特徴とする太陽電池の製造方法。 - 前記塗布ステップでは、前記基板の受光面と反対側の面の周辺部に沿って、前記水を添加した珪酸ナトリウム(Na2SiO3)を塗布することを特徴とする請求項1記載の太陽電池の製造方法。
- 前記塗布ステップでは、前記基板の受光面と反対側の面において、前記水を添加した珪酸ナトリウム(Na2SiO3)をディスペンサーまたはスクリーン印刷により塗布することを特徴とする請求項2記載の太陽電池の製造方法。
- 前記エッチングステップでは、室温でエッチングを行うことを特徴とする請求項1記載の太陽電池の製造方法。
- 前記水を添加した珪酸ナトリウム(Na2SiO3)の粘度は、4Pa・s以上7Pa・s以下であることを特徴とする請求項1〜4のいずれかに記載の太陽電池の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005226865A JP4869654B2 (ja) | 2005-08-04 | 2005-08-04 | 太陽電池の製造方法 |
US11/300,539 US7741139B2 (en) | 2005-08-04 | 2005-12-15 | Solar cell manufacturing method |
DE102006016996A DE102006016996A1 (de) | 2005-08-04 | 2006-04-07 | Herstellungsverfahren für Solarzellen |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005226865A JP4869654B2 (ja) | 2005-08-04 | 2005-08-04 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007042940A JP2007042940A (ja) | 2007-02-15 |
JP4869654B2 true JP4869654B2 (ja) | 2012-02-08 |
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JP2005226865A Expired - Fee Related JP4869654B2 (ja) | 2005-08-04 | 2005-08-04 | 太陽電池の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7741139B2 (ja) |
JP (1) | JP4869654B2 (ja) |
DE (1) | DE102006016996A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008235521A (ja) | 2007-03-20 | 2008-10-02 | Sanyo Electric Co Ltd | 半導体基板の割断方法及び太陽電池の割断方法並びに太陽電池 |
US20100255626A1 (en) * | 2007-12-20 | 2010-10-07 | Teoss Co., Ltd. | high viscosity etchant and a selective etching method for photovoltaic element substrates of solar cells using the same |
CN101866970B (zh) * | 2010-05-31 | 2012-09-19 | 江西赛维Ldk太阳能高科技有限公司 | 一种太阳能电池片及其太阳能电池串和太阳能电池组件 |
JP5718782B2 (ja) * | 2011-09-30 | 2015-05-13 | 三菱電機株式会社 | 光起電力装置の製造方法 |
JP6306855B2 (ja) * | 2013-10-31 | 2018-04-04 | 東京応化工業株式会社 | 太陽電池の製造方法 |
JP2015213189A (ja) * | 2015-07-09 | 2015-11-26 | 三菱電機株式会社 | 光起電力装置の製造方法 |
CN109463019B (zh) * | 2016-06-13 | 2022-06-24 | 信越化学工业株式会社 | 太阳能电池及其制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US4137123A (en) * | 1975-12-31 | 1979-01-30 | Motorola, Inc. | Texture etching of silicon: method |
US4322571A (en) * | 1980-07-17 | 1982-03-30 | The Boeing Company | Solar cells and methods for manufacture thereof |
JP2794141B2 (ja) | 1992-05-22 | 1998-09-03 | シャープ株式会社 | 光電変換装置の製造方法 |
JPH11214722A (ja) | 1998-01-28 | 1999-08-06 | Mitsubishi Electric Corp | 太陽電池、およびその製造方法並びに製造装置 |
US6558570B2 (en) * | 1998-07-01 | 2003-05-06 | Micron Technology, Inc. | Polishing slurry and method for chemical-mechanical polishing |
DE10032279B4 (de) | 2000-07-03 | 2006-09-28 | Christian-Albrechts-Universität Zu Kiel | Elektrische Passivierung der Randgebiete von Solarzellen |
EP1378947A1 (en) * | 2002-07-01 | 2004-01-07 | Interuniversitair Microelektronica Centrum Vzw | Semiconductor etching paste and the use thereof for localised etching of semiconductor substrates |
JP2005150614A (ja) * | 2003-11-19 | 2005-06-09 | Sharp Corp | 太陽電池及びその製造方法 |
-
2005
- 2005-08-04 JP JP2005226865A patent/JP4869654B2/ja not_active Expired - Fee Related
- 2005-12-15 US US11/300,539 patent/US7741139B2/en not_active Expired - Fee Related
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2006
- 2006-04-07 DE DE102006016996A patent/DE102006016996A1/de not_active Ceased
Also Published As
Publication number | Publication date |
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DE102006016996A1 (de) | 2007-02-15 |
US20070031986A1 (en) | 2007-02-08 |
JP2007042940A (ja) | 2007-02-15 |
US7741139B2 (en) | 2010-06-22 |
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