JP4863882B2 - 膜のエッチング選択比の変更方法 - Google Patents
膜のエッチング選択比の変更方法 Download PDFInfo
- Publication number
- JP4863882B2 JP4863882B2 JP2006547391A JP2006547391A JP4863882B2 JP 4863882 B2 JP4863882 B2 JP 4863882B2 JP 2006547391 A JP2006547391 A JP 2006547391A JP 2006547391 A JP2006547391 A JP 2006547391A JP 4863882 B2 JP4863882 B2 JP 4863882B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- sacrificial gate
- lattice
- film
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005530 etching Methods 0.000 title claims description 74
- 238000000034 method Methods 0.000 title description 70
- 239000013078 crystal Substances 0.000 claims description 122
- 239000000758 substrate Substances 0.000 claims description 64
- 239000002019 doping agent Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 182
- 125000004429 atom Chemical group 0.000 description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 47
- 229910052710 silicon Inorganic materials 0.000 description 40
- 239000010703 silicon Substances 0.000 description 40
- 239000007772 electrode material Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 29
- 230000008569 process Effects 0.000 description 26
- 238000001994 activation Methods 0.000 description 24
- 230000004913 activation Effects 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 230000008859 change Effects 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 8
- 239000000908 ammonium hydroxide Substances 0.000 description 8
- -1 for example Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 125000004437 phosphorous atom Chemical group 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000004075 alteration Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/924—To facilitate selective etching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Description
CMOS集積回路の性能は劇的に改善され得る。図2A乃至2Pは、伝統的なプレーナ型デバイスを有するCMOS集積回路を形成するためのゲート置換方法を例示しているが、同一の技術が、図1Eに示されるような非プレーナ型デバイスすなわち3ゲートデバイスを有するCMOS集積回路を形成するために用いられ得る。
Claims (3)
- 集積回路の製造方法であって:
半導体基板の第1チャネル領域上に犠牲ゲート誘電層及び第1犠牲ゲート電極を形成し、かつ前記半導体基板の第2チャネル領域上に犠牲ゲート誘電層及び第2犠牲ゲート電極を形成する工程;
前記第1犠牲ゲート電極はエッチャントでエッチングされ、かつ前記第2犠牲ゲート電極は前記第1犠牲ゲート電極をエッチングするエッチャントでエッチングされないように、前記第2犠牲ゲート電極に結晶格子の原子より小さいドーパント原子を注入し、アニールすることによって、前記第2犠牲ゲート電極を変化させる工程;
前記第1犠牲ゲート電極を覆うように、かつ前記第2犠牲ゲート電極を覆うように誘電層を形成する工程;
前記第1犠牲ゲート電極及び前記第2犠牲ゲート電極の頂部表面を露出するように前記誘電層を平坦化する工程;
前記誘電層を平坦化する工程の直後に、第1の開口を形成して前記半導体基板の前記第1チャネル領域を露出するように、前記第2犠牲ゲート電極をエッチングすることなく前記第1犠牲ゲート電極を前記第1犠牲ゲート電極をエッチングするエッチャントでエッチングし、次に犠牲ゲート誘電層を犠牲ゲート誘電層をエッチングするエッチャントでエッチングする工程;
前記誘電層上及び前記第1の開口内にゲート誘電層を堆積し、次に第1金属膜を堆積する工程;
第1金属ゲート電極を形成するように、前記誘電層の頂部から前記第1金属膜及び前記ゲート誘電層を除去する工程;
第2の開口を形成して前記半導体基板の前記第2チャネル領域を露出するように、前記第2犠牲ゲート電極を前記第1犠牲ゲート電極をエッチングするエッチャントとは異なるエッチャントでエッチングし、次に犠牲ゲート誘電層を犠牲ゲート誘電層をエッチングするエッチャントでエッチングする工程;
前記誘電層上及び前記第2の開口内にゲート誘電層を堆積し、次に前記第1金属膜とは異なる第2金属膜を堆積する工程;及び
第2金属ゲート電極を形成するように、前記誘電層の頂部から前記第2金属膜及び前記ゲート誘電層を除去する工程;
を有する製造方法。 - 請求項1に記載の製造方法であって、前記第1金属膜が3.9eVと4.2eVとの間の仕事関数を有するところの製造方法。
- 請求項1に記載の製造方法であって、前記第2金属膜が4.9eVから5.2eVの間の仕事関数を有するところの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/750,045 | 2003-12-30 | ||
US10/750,045 US7247578B2 (en) | 2003-12-30 | 2003-12-30 | Method of varying etch selectivities of a film |
PCT/US2004/043393 WO2005067020A2 (en) | 2003-12-30 | 2004-12-23 | A method of varying etch selectivities of a film |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007517406A JP2007517406A (ja) | 2007-06-28 |
JP4863882B2 true JP4863882B2 (ja) | 2012-01-25 |
Family
ID=34711191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006547391A Expired - Fee Related JP4863882B2 (ja) | 2003-12-30 | 2004-12-23 | 膜のエッチング選択比の変更方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7247578B2 (ja) |
EP (1) | EP1702356A2 (ja) |
JP (1) | JP4863882B2 (ja) |
KR (1) | KR100838853B1 (ja) |
CN (1) | CN1902739A (ja) |
TW (1) | TWI247351B (ja) |
WO (1) | WO2005067020A2 (ja) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7456476B2 (en) * | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
US6909151B2 (en) | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7247578B2 (en) | 2003-12-30 | 2007-07-24 | Intel Corporation | Method of varying etch selectivities of a film |
US7268058B2 (en) * | 2004-01-16 | 2007-09-11 | Intel Corporation | Tri-gate transistors and methods to fabricate same |
US7154118B2 (en) | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
US7504328B2 (en) * | 2004-05-11 | 2009-03-17 | National University Of Singapore | Schottky barrier source/drain n-mosfet using ytterbium silicide |
US8399934B2 (en) * | 2004-12-20 | 2013-03-19 | Infineon Technologies Ag | Transistor device |
US8178902B2 (en) | 2004-06-17 | 2012-05-15 | Infineon Technologies Ag | CMOS transistor with dual high-k gate dielectric and method of manufacture thereof |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7084025B2 (en) * | 2004-07-07 | 2006-08-01 | Chartered Semiconductor Manufacturing Ltd | Selective oxide trimming to improve metal T-gate transistor |
US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7332439B2 (en) | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20060202266A1 (en) | 2005-03-14 | 2006-09-14 | Marko Radosavljevic | Field effect transistor with metal source/drain regions |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) * | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US7402875B2 (en) | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
US8188551B2 (en) * | 2005-09-30 | 2012-05-29 | Infineon Technologies Ag | Semiconductor devices and methods of manufacture thereof |
US7479421B2 (en) | 2005-09-28 | 2009-01-20 | Intel Corporation | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
KR100739653B1 (ko) * | 2006-05-13 | 2007-07-13 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터 및 그 제조 방법 |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
US7465623B2 (en) * | 2006-08-28 | 2008-12-16 | Advanced Micro Devices, Inc. | Methods for fabricating a semiconductor device on an SOI substrate |
EP1914800A1 (en) * | 2006-10-20 | 2008-04-23 | Interuniversitair Microelektronica Centrum | Method of manufacturing a semiconductor device with multiple dielectrics |
JP2008210874A (ja) * | 2007-02-23 | 2008-09-11 | Toshiba Corp | 半導体装置の製造方法 |
US8822293B2 (en) * | 2008-03-13 | 2014-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
JP2011192776A (ja) * | 2010-03-15 | 2011-09-29 | Toshiba Corp | 半導体装置の製造方法 |
US8609495B2 (en) * | 2010-04-08 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid gate process for fabricating finfet device |
US8283734B2 (en) * | 2010-04-09 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-threshold voltage device and method of making same |
CN102655121A (zh) * | 2011-03-03 | 2012-09-05 | 中国科学院微电子研究所 | 牺牲栅去除方法及栅堆叠制作方法 |
US8685807B2 (en) * | 2011-05-04 | 2014-04-01 | Globalfoundries Inc. | Method of forming metal gates and metal contacts in a common fill process |
US9070784B2 (en) | 2011-07-22 | 2015-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure of a CMOS semiconductor device and method of forming the same |
CN103165426B (zh) * | 2011-12-12 | 2015-09-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
US9397217B2 (en) * | 2012-12-28 | 2016-07-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure of non-planar semiconductor device |
US8987082B2 (en) * | 2013-05-31 | 2015-03-24 | Stmicroelectronics, Inc. | Method of making a semiconductor device using sacrificial fins |
US10297602B2 (en) * | 2017-05-18 | 2019-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implantations for forming source/drain regions of different transistors |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3390507A (en) * | 1964-08-27 | 1968-07-02 | Dow Chemical Co | Method of forming a dual compartment container |
US3738880A (en) * | 1971-06-23 | 1973-06-12 | Rca Corp | Method of making a semiconductor device |
GB1501114A (en) * | 1974-04-25 | 1978-02-15 | Rca Corp | Method of making a semiconductor device |
CA1129118A (en) | 1978-07-19 | 1982-08-03 | Tetsushi Sakai | Semiconductor devices and method of manufacturing the same |
US4465528A (en) | 1981-07-15 | 1984-08-14 | Fujitsu Limited | Method of producing a walled emitter semiconductor device |
GB2131748B (en) | 1982-12-15 | 1986-05-21 | Secr Defence | Silicon etch process |
JPS6328067A (ja) | 1986-07-22 | 1988-02-05 | Sony Corp | 半導体装置の製造方法 |
JPH04322427A (ja) * | 1991-04-23 | 1992-11-12 | Toshiba Corp | 半導体装置の製造方法 |
US5358908A (en) * | 1992-02-14 | 1994-10-25 | Micron Technology, Inc. | Method of creating sharp points and other features on the surface of a semiconductor substrate |
US5431777A (en) * | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
DE19530944A1 (de) * | 1994-10-07 | 1996-04-11 | At & T Corp | Mikrobearbeitung von Silizium |
US6309975B1 (en) * | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
MY120464A (en) * | 1997-12-09 | 2005-10-31 | Shinetsu Handotai Kk | Semiconductor wafer processing method and semiconductor wafers produced by the same |
FR2790250B1 (fr) * | 1999-02-25 | 2001-06-01 | Automatisme Nouveau Organisati | Dispositif formant goulotte d'evacuation d'objets, module incorporant de telles goulottes et installation de tri d'objets equipes de celles-ci |
GB2358737A (en) | 1999-03-01 | 2001-08-01 | Nec Corp | Methods for manufacturing a complimentary integrated circuit |
JP3264264B2 (ja) * | 1999-03-01 | 2002-03-11 | 日本電気株式会社 | 相補型集積回路とその製造方法 |
US6255698B1 (en) | 1999-04-28 | 2001-07-03 | Advanced Micro Devices, Inc. | Separately optimized gate structures for n-channel and p-channel transistors in an integrated circuit |
US6171910B1 (en) * | 1999-07-21 | 2001-01-09 | Motorola Inc. | Method for forming a semiconductor device |
JP2002198441A (ja) * | 2000-11-16 | 2002-07-12 | Hynix Semiconductor Inc | 半導体素子のデュアル金属ゲート形成方法 |
US6858483B2 (en) | 2002-12-20 | 2005-02-22 | Intel Corporation | Integrating n-type and p-type metal gate transistors |
US7183184B2 (en) | 2003-12-29 | 2007-02-27 | Intel Corporation | Method for making a semiconductor device that includes a metal gate electrode |
US7247578B2 (en) | 2003-12-30 | 2007-07-24 | Intel Corporation | Method of varying etch selectivities of a film |
US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
-
2003
- 2003-12-30 US US10/750,045 patent/US7247578B2/en not_active Expired - Fee Related
-
2004
- 2004-08-19 TW TW093124988A patent/TWI247351B/zh not_active IP Right Cessation
- 2004-12-23 CN CNA2004800395316A patent/CN1902739A/zh active Pending
- 2004-12-23 WO PCT/US2004/043393 patent/WO2005067020A2/en active Application Filing
- 2004-12-23 KR KR1020067013061A patent/KR100838853B1/ko not_active IP Right Cessation
- 2004-12-23 JP JP2006547391A patent/JP4863882B2/ja not_active Expired - Fee Related
- 2004-12-23 EP EP04815466A patent/EP1702356A2/en not_active Withdrawn
-
2007
- 2007-04-19 US US11/788,799 patent/US20070197042A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW200522181A (en) | 2005-07-01 |
JP2007517406A (ja) | 2007-06-28 |
US20070197042A1 (en) | 2007-08-23 |
TWI247351B (en) | 2006-01-11 |
WO2005067020A3 (en) | 2005-12-15 |
WO2005067020A2 (en) | 2005-07-21 |
EP1702356A2 (en) | 2006-09-20 |
KR20060105871A (ko) | 2006-10-11 |
KR100838853B1 (ko) | 2008-06-16 |
US7247578B2 (en) | 2007-07-24 |
US20050148131A1 (en) | 2005-07-07 |
CN1902739A (zh) | 2007-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4863882B2 (ja) | 膜のエッチング選択比の変更方法 | |
US7105390B2 (en) | Nonplanar transistors with metal gate electrodes | |
US9559119B2 (en) | High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process | |
KR101374461B1 (ko) | 반도체 소자의 접촉 구조 | |
KR100702553B1 (ko) | 벌크 반도체로부터 형성된 finFET 소자 및 그 제조방법 | |
JP2010527153A (ja) | チップレス・エピタキシャルソース/ドレイン領域を有する半導体デバイス | |
TW201017733A (en) | Semiconductor device having metal gate stack and fabrication method thereof | |
TW201013758A (en) | Semiconductor device and method for making semiconductor device having metal gate stack | |
US11456373B2 (en) | Semiconductor device and method | |
TW200428537A (en) | Improved MOS transistor | |
US11527628B2 (en) | Semiconductor device and method | |
TW202027278A (zh) | 半導體元件及其製造方法 | |
TW201009905A (en) | Method for making metal gate stack of semiconductor device | |
US11735481B2 (en) | Semiconductor device and method | |
WO2013170477A1 (zh) | 半导体器件及其制造方法 | |
TW594887B (en) | Process for producing semiconductor device and semiconductor device | |
TWI809743B (zh) | 半導體裝置和製造方法 | |
TW202230528A (zh) | 半導體元件及其製造方法 | |
TW513757B (en) | Manufacture method of ultra fine metal gate | |
KR100467642B1 (ko) | 반도체 소자 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090217 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090514 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090609 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090904 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091020 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100217 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20100304 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20100430 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110920 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111108 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141118 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |