JP4851804B2 - 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法 - Google Patents

集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法 Download PDF

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Publication number
JP4851804B2
JP4851804B2 JP2006035507A JP2006035507A JP4851804B2 JP 4851804 B2 JP4851804 B2 JP 4851804B2 JP 2006035507 A JP2006035507 A JP 2006035507A JP 2006035507 A JP2006035507 A JP 2006035507A JP 4851804 B2 JP4851804 B2 JP 4851804B2
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Japan
Prior art keywords
sample
image
processing
ion beam
scanning
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JP2006035507A
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Japanese (ja)
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JP2007214088A5 (enExample
JP2007214088A (ja
Inventor
裕也 鈴木
武夫 上野
紀恵 矢口
充 今野
毅 大西
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2006035507A priority Critical patent/JP4851804B2/ja
Priority to US11/654,685 priority patent/US7612337B2/en
Publication of JP2007214088A publication Critical patent/JP2007214088A/ja
Publication of JP2007214088A5 publication Critical patent/JP2007214088A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/25—Tubes for localised analysis using electron or ion beams
    • H01J2237/2505—Tubes for localised analysis using electron or ion beams characterised by their application
    • H01J2237/2516—Secondary particles mass or energy spectrometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2006035507A 2006-02-13 2006-02-13 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法 Expired - Fee Related JP4851804B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006035507A JP4851804B2 (ja) 2006-02-13 2006-02-13 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法
US11/654,685 US7612337B2 (en) 2006-02-13 2007-01-18 Focused ion beam system and a method of sample preparation and observation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006035507A JP4851804B2 (ja) 2006-02-13 2006-02-13 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法

Publications (3)

Publication Number Publication Date
JP2007214088A JP2007214088A (ja) 2007-08-23
JP2007214088A5 JP2007214088A5 (enExample) 2009-11-05
JP4851804B2 true JP4851804B2 (ja) 2012-01-11

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JP2006035507A Expired - Fee Related JP4851804B2 (ja) 2006-02-13 2006-02-13 集束イオンビーム加工観察装置、集束イオンビーム加工観察システム及び加工観察方法

Country Status (2)

Country Link
US (1) US7612337B2 (enExample)
JP (1) JP4851804B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
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JP5001661B2 (ja) * 2006-03-13 2012-08-15 株式会社クレステック 電子ビーム記録装置
JP5313124B2 (ja) * 2006-03-16 2013-10-09 バーテックス ファーマシューティカルズ インコーポレイテッド 立体的化合物を製造するための方法および中間体
US7872236B2 (en) * 2007-01-30 2011-01-18 Hermes Microvision, Inc. Charged particle detection devices
JP5009126B2 (ja) * 2007-10-26 2012-08-22 真則 尾張 アトムプローブ用針状試料の加工方法及び集束イオンビーム装置
JP5105281B2 (ja) * 2007-12-04 2012-12-26 エスアイアイ・ナノテクノロジー株式会社 試料加工方法および装置
US7960697B2 (en) * 2008-10-23 2011-06-14 Hermes-Microvision, Inc. Electron beam apparatus
US8299432B2 (en) * 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US7919760B2 (en) * 2008-12-09 2011-04-05 Hermes-Microvision, Inc. Operation stage for wafer edge inspection and review
US8094924B2 (en) * 2008-12-15 2012-01-10 Hermes-Microvision, Inc. E-beam defect review system
JP5352335B2 (ja) 2009-04-28 2013-11-27 株式会社日立ハイテクノロジーズ 複合荷電粒子線装置
JP5739119B2 (ja) * 2009-09-15 2015-06-24 株式会社日立ハイテクサイエンス 断面加工観察装置
GB201002645D0 (en) 2010-02-17 2010-03-31 Univ Lancaster Method and apparatus for ion beam polishing
JP5612493B2 (ja) * 2010-03-18 2014-10-22 株式会社日立ハイテクサイエンス 複合荷電粒子ビーム装置
JP2012168027A (ja) * 2011-02-15 2012-09-06 Sumitomo Metal Mining Co Ltd 電子顕微鏡用試料の作製方法
CZ303228B6 (cs) * 2011-03-23 2012-06-06 Tescan A.S. Zpusob analýzy materiálu fokusovaným elektronovým svazkem s využitím charakteristického rentgenového zárení a zpetne odražených elektronu a zarízení k jeho provádení
CA2835713C (en) * 2011-05-13 2023-04-04 Fibics Incorporated Microscopy imaging method and system
JP5751935B2 (ja) 2011-06-06 2015-07-22 株式会社日立ハイテクノロジーズ 荷電粒子線装置及び試料作製方法
CN102944569A (zh) * 2012-12-07 2013-02-27 北京泰德制药股份有限公司 一种脂微球/脂质乳剂微观结构的测定方法
JP6215557B2 (ja) * 2013-04-02 2017-10-18 株式会社日立ハイテクノロジーズ 電子顕微鏡
JP6207081B2 (ja) * 2014-03-24 2017-10-04 株式会社日立ハイテクサイエンス 集束イオンビーム装置
JP6385899B2 (ja) 2014-07-21 2018-09-05 エフ・イ−・アイ・カンパニー Ｔｅｍ試料取付け構造
EP3125270B1 (en) * 2015-07-27 2019-04-10 FEI Company Tem sample mounting geometry
US11024481B2 (en) * 2016-03-04 2021-06-01 Fei Company Scanning electron microscope
US10714309B1 (en) * 2019-04-04 2020-07-14 Fei Company Using images from secondary microscope detectors to automatically generate labeled images from primary microscope detectors
JP7577341B2 (ja) * 2019-04-19 2024-11-05 ディレクト、エレクトロン、エルピー ４ｄ ｓｔｅｍを用いて元素組成を判定するシステム、装置、および方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3132938B2 (ja) * 1993-02-03 2001-02-05 セイコーインスツルメンツ株式会社 断面加工観察用荷電ビーム装置および加工方法
JP2919229B2 (ja) 1993-07-07 1999-07-12 日本電気株式会社 集束イオンビーム加工方法
JP4185604B2 (ja) * 1998-11-18 2008-11-26 株式会社日立製作所 試料解析方法、試料作成方法およびそのための装置
JP2000223061A (ja) 1999-02-01 2000-08-11 Seiko Instruments Inc 集束イオンビーム装置
JP3897271B2 (ja) * 1999-09-17 2007-03-22 株式会社日立製作所 加工観察装置及び試料加工方法
JP3688160B2 (ja) * 1999-09-17 2005-08-24 株式会社日立製作所 走査電子顕微鏡
JP4006165B2 (ja) * 2000-04-21 2007-11-14 株式会社日立製作所 元素分析装置及び走査透過型電子顕微鏡並びに元素分析方法
JP2003007246A (ja) * 2001-06-22 2003-01-10 Jeol Ltd 電子顕微鏡
JP2003016988A (ja) * 2001-06-27 2003-01-17 Fujitsu Ltd フォーカストイオンビーム装置及びそれを利用したフォーカストイオンビーム加工方法
JP4199629B2 (ja) * 2003-09-18 2008-12-17 株式会社日立ハイテクノロジーズ 内部構造観察方法とその装置
JP4733959B2 (ja) * 2003-12-24 2011-07-27 株式会社日立ハイテクノロジーズ プローブ接触方法及び荷電粒子線装置
JP4426871B2 (ja) * 2004-02-25 2010-03-03 エスアイアイ・ナノテクノロジー株式会社 Ｆｉｂ／ｓｅｍ複合装置の画像ノイズ除去
JP2006105960A (ja) * 2004-09-13 2006-04-20 Jeol Ltd 試料検査方法及び試料検査装置
KR20070093053A (ko) * 2004-11-15 2007-09-17 크레던스 시스템스 코포레이션 집속 이온 빔 데이터 분석에 관한 시스템 및 방법

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US20070187597A1 (en) 2007-08-16
US7612337B2 (en) 2009-11-03
JP2007214088A (ja) 2007-08-23

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