JP4851060B2 - 半導体レーザ素子の製造方法 - Google Patents

半導体レーザ素子の製造方法 Download PDF

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Publication number
JP4851060B2
JP4851060B2 JP2003067217A JP2003067217A JP4851060B2 JP 4851060 B2 JP4851060 B2 JP 4851060B2 JP 2003067217 A JP2003067217 A JP 2003067217A JP 2003067217 A JP2003067217 A JP 2003067217A JP 4851060 B2 JP4851060 B2 JP 4851060B2
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Japan
Prior art keywords
substrate
region
cutting
wafer
semiconductor
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Expired - Lifetime
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JP2003067217A
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English (en)
Japanese (ja)
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JP2003338652A (ja
JP2003338652A5 (enrdf_load_stackoverflow
Inventor
文嗣 福世
憲志 福満
信治 神山
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to JP2003067217A priority Critical patent/JP4851060B2/ja
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Publication of JP2003338652A5 publication Critical patent/JP2003338652A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]

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  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2003067217A 2002-03-12 2003-03-12 半導体レーザ素子の製造方法 Expired - Lifetime JP4851060B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003067217A JP4851060B2 (ja) 2002-03-12 2003-03-12 半導体レーザ素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-67372 2002-03-12
JP2002067372 2002-03-12
JP2003067217A JP4851060B2 (ja) 2002-03-12 2003-03-12 半導体レーザ素子の製造方法

Publications (3)

Publication Number Publication Date
JP2003338652A JP2003338652A (ja) 2003-11-28
JP2003338652A5 JP2003338652A5 (enrdf_load_stackoverflow) 2006-04-27
JP4851060B2 true JP4851060B2 (ja) 2012-01-11

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JP2003067217A Expired - Lifetime JP4851060B2 (ja) 2002-03-12 2003-03-12 半導体レーザ素子の製造方法

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JP (1) JP4851060B2 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007087973A (ja) 2005-09-16 2007-04-05 Rohm Co Ltd 窒化物半導体素子の製法およびその方法により得られる窒化物半導体発光素子
JP5037082B2 (ja) * 2006-10-02 2012-09-26 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP2008311404A (ja) * 2007-06-14 2008-12-25 Disco Abrasive Syst Ltd ウエーハの加工方法
DE102007033242A1 (de) * 2007-07-12 2009-01-15 Jenoptik Automatisierungstechnik Gmbh Verfahren und Vorrichtung zum Trennen einer Planplatte aus sprödbrüchigem Material in mehrere Einzelplatten mittels Laser
JP2009049390A (ja) 2007-07-25 2009-03-05 Rohm Co Ltd 窒化物半導体素子およびその製造方法
KR101009653B1 (ko) 2008-10-24 2011-01-19 주식회사 에피밸리 3족 질화물 반도체 발광소자
WO2010098186A1 (ja) * 2009-02-25 2010-09-02 日亜化学工業株式会社 半導体素子の製造方法
JP2010239005A (ja) * 2009-03-31 2010-10-21 Kinki Univ 裏面照射型撮像素子の製造方法、その製造方法により製造された裏面照射型撮像素子及びそれを備えた撮像装置
JP2013046924A (ja) * 2011-07-27 2013-03-07 Toshiba Mach Co Ltd レーザダイシング方法
JP5146618B1 (ja) * 2012-05-30 2013-02-20 富士ゼロックス株式会社 発光素子の製造方法
JP5115671B1 (ja) * 2012-05-30 2013-01-09 富士ゼロックス株式会社 ウエハ切断装置、半導体素子の製造方法
WO2015008189A2 (en) * 2013-07-18 2015-01-22 Koninklijke Philips N.V. Dicing a wafer of light emitting devices
JP2017046225A (ja) * 2015-08-27 2017-03-02 株式会社ディスコ Ｂａｗデバイス及びｂａｗデバイスの製造方法
WO2017217335A1 (ja) * 2016-06-13 2017-12-21 三菱電機株式会社 半導体装置の製造方法
CN111986986B (zh) * 2020-08-24 2024-05-03 松山湖材料实验室 一种晶圆的剥离方法及剥离装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0732281B2 (ja) * 1985-10-25 1995-04-10 株式会社日立製作所 劈開装置及び劈開方法
JP3024990B2 (ja) * 1990-08-31 2000-03-27 日本石英硝子株式会社 石英ガラス材料の切断加工方法
JP3449201B2 (ja) * 1997-11-28 2003-09-22 日亜化学工業株式会社 窒化物半導体素子の製造方法
JP3626442B2 (ja) * 2000-09-13 2005-03-09 浜松ホトニクス株式会社 レーザ加工方法
JP2003017790A (ja) * 2001-07-03 2003-01-17 Matsushita Electric Ind Co Ltd 窒化物系半導体素子及び製造方法
JP2003046177A (ja) * 2001-07-31 2003-02-14 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法
JP2003338468A (ja) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子
JP2003338636A (ja) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk 発光素子の製造方法、発光ダイオード、及び半導体レーザ素子

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US12070875B2 (en) 2019-05-17 2024-08-27 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

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