JP4844196B2 - 放射線検出回路 - Google Patents

放射線検出回路 Download PDF

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Publication number
JP4844196B2
JP4844196B2 JP2006093927A JP2006093927A JP4844196B2 JP 4844196 B2 JP4844196 B2 JP 4844196B2 JP 2006093927 A JP2006093927 A JP 2006093927A JP 2006093927 A JP2006093927 A JP 2006093927A JP 4844196 B2 JP4844196 B2 JP 4844196B2
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JP
Japan
Prior art keywords
signal
circuit
radiation
radiation detection
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006093927A
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English (en)
Japanese (ja)
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JP2007271295A (ja
JP2007271295A5 (enExample
Inventor
隆 松本
聡 花沢
肇彦 森脇
正和 石橋
成章 桐木
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Hitachi Ltd
Original Assignee
Hitachi Ltd
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Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2006093927A priority Critical patent/JP4844196B2/ja
Priority to US11/656,478 priority patent/US7518112B2/en
Publication of JP2007271295A publication Critical patent/JP2007271295A/ja
Publication of JP2007271295A5 publication Critical patent/JP2007271295A5/ja
Application granted granted Critical
Publication of JP4844196B2 publication Critical patent/JP4844196B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/247—Detector read-out circuitry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Noise Elimination (AREA)
  • Nuclear Medicine (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2006093927A 2006-03-30 2006-03-30 放射線検出回路 Expired - Fee Related JP4844196B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006093927A JP4844196B2 (ja) 2006-03-30 2006-03-30 放射線検出回路
US11/656,478 US7518112B2 (en) 2006-03-30 2007-01-23 Radiation detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006093927A JP4844196B2 (ja) 2006-03-30 2006-03-30 放射線検出回路

Publications (3)

Publication Number Publication Date
JP2007271295A JP2007271295A (ja) 2007-10-18
JP2007271295A5 JP2007271295A5 (enExample) 2008-11-20
JP4844196B2 true JP4844196B2 (ja) 2011-12-28

Family

ID=38557435

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006093927A Expired - Fee Related JP4844196B2 (ja) 2006-03-30 2006-03-30 放射線検出回路

Country Status (2)

Country Link
US (1) US7518112B2 (enExample)
JP (1) JP4844196B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101903798B (zh) * 2007-11-02 2012-12-12 华盛顿大学 用于正电子发射断层摄影术的数据采集
US8210440B1 (en) * 2008-07-31 2012-07-03 Ixys Ch Gmbh Low-cost magnetic stripe reader using independent switching thresholds
US7932563B2 (en) * 2009-01-30 2011-04-26 Xilinx, Inc. Techniques for improving transistor-to-transistor stress uniformity
WO2012007634A1 (en) * 2010-07-16 2012-01-19 Helsingin Yliopisto Radiation detector, pitch adapter, and method for producing a pitch adapter
WO2012020670A1 (ja) * 2010-08-09 2012-02-16 株式会社東芝 核医学イメージング装置及び核医学イメージングシステム
JP6219282B2 (ja) * 2012-08-02 2017-10-25 株式会社堀場製作所 増幅器及び放射線検出器
CN111462723B (zh) * 2020-03-31 2023-09-26 上海联影医疗科技股份有限公司 主动降噪方法及装置
US12198669B2 (en) 2019-12-30 2025-01-14 Shanghai United Imaging Healthcare Co., Ltd. Systems and methods for reducing noise in imaging system
CN118944607B (zh) * 2024-10-12 2024-12-10 南京大学 复位式电荷灵敏放大电路、数据信号的放大及复位方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6282781A (ja) * 1985-10-07 1987-04-16 Seiko Epson Corp 固体撮像装置
JPH05175520A (ja) * 1991-12-20 1993-07-13 Fujitsu Ltd 光電気回路混載モジュール
JPH06331750A (ja) * 1993-05-18 1994-12-02 Toshiba Corp 放射線エネルギースペクトル測定装置
US6613978B2 (en) * 1993-06-18 2003-09-02 Maxwell Technologies, Inc. Radiation shielding of three dimensional multi-chip modules
JPH0863339A (ja) * 1994-08-22 1996-03-08 Shimadzu Corp ディジタル積分回路
JP3344550B2 (ja) * 1997-08-07 2002-11-11 シャープ株式会社 受光増幅装置
JP4187376B2 (ja) * 2000-02-16 2008-11-26 ローム株式会社 受光増幅装置
US6509565B2 (en) * 2001-02-20 2003-01-21 Ideas Asa Discriminator circuit for a charge detector
US6590215B2 (en) * 2001-04-05 2003-07-08 Toshiba Corporation Readout circuit for a charge detector
JP2003179814A (ja) * 2001-12-10 2003-06-27 Canon Inc 映像信号処理装置
US6720594B2 (en) * 2002-01-07 2004-04-13 Xerox Corporation Image sensor array with reduced pixel crosstalk
JP2004080747A (ja) * 2002-06-17 2004-03-11 Teac Corp 回路基板及びこれを具備する情報記憶装置
JP2004037382A (ja) * 2002-07-05 2004-02-05 Toshiba Corp 放射線検出器及び放射線診断装置
JP4136845B2 (ja) * 2002-08-30 2008-08-20 富士電機ホールディングス株式会社 半導体モジュールの製造方法
JP3863872B2 (ja) * 2003-09-30 2006-12-27 株式会社日立製作所 陽電子放出型断層撮影装置
JP4329491B2 (ja) * 2003-10-28 2009-09-09 パナソニック電工株式会社 赤外線検出装置
JP4369215B2 (ja) * 2003-12-10 2009-11-18 住友重機械工業株式会社 Ｐｅｔ装置
JP2006090827A (ja) 2004-09-24 2006-04-06 Hitachi Ltd 放射線検査装置及びそのタイミング補正方法
JP4403045B2 (ja) * 2004-09-30 2010-01-20 富士フイルム株式会社 放射線画像検出器
JP3818317B1 (ja) * 2005-09-30 2006-09-06 株式会社日立製作所 核医学診断装置及び核医学診断装置における放射線検出器の識別方法

Also Published As

Publication number Publication date
US20070228279A1 (en) 2007-10-04
JP2007271295A (ja) 2007-10-18
US7518112B2 (en) 2009-04-14

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