JP4826803B2 - 感放射線性樹脂組成物および液晶表示素子用スペーサーとその製造法 - Google Patents

感放射線性樹脂組成物および液晶表示素子用スペーサーとその製造法 Download PDF

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JP4826803B2
JP4826803B2 JP2007072696A JP2007072696A JP4826803B2 JP 4826803 B2 JP4826803 B2 JP 4826803B2 JP 2007072696 A JP2007072696 A JP 2007072696A JP 2007072696 A JP2007072696 A JP 2007072696A JP 4826803 B2 JP4826803 B2 JP 4826803B2
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parts
radiation
resin composition
film
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JP2008233517A (ja
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大吾 一戸
龍司 杉
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JSR Corp
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JSR Corp
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Priority to KR1020080025350A priority patent/KR101411778B1/ko
Priority to TW097109643A priority patent/TWI427409B/zh
Priority to CN2008100868786A priority patent/CN101271270B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
    • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Liquid Crystal (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2007072696A 2007-03-20 2007-03-20 感放射線性樹脂組成物および液晶表示素子用スペーサーとその製造法 Active JP4826803B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007072696A JP4826803B2 (ja) 2007-03-20 2007-03-20 感放射線性樹脂組成物および液晶表示素子用スペーサーとその製造法
KR1020080025350A KR101411778B1 (ko) 2007-03-20 2008-03-19 감방사선성 수지 조성물 및 액정 표시 소자용 스페이서와그의 제조 방법
TW097109643A TWI427409B (zh) 2007-03-20 2008-03-19 Sensitive linear resin composition and spacer for liquid crystal display device and method for manufacturing the same
CN2008100868786A CN101271270B (zh) 2007-03-20 2008-03-20 放射线敏感性树脂组合物、液晶显示元件用间隔体及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007072696A JP4826803B2 (ja) 2007-03-20 2007-03-20 感放射線性樹脂組成物および液晶表示素子用スペーサーとその製造法

Publications (2)

Publication Number Publication Date
JP2008233517A JP2008233517A (ja) 2008-10-02
JP4826803B2 true JP4826803B2 (ja) 2011-11-30

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JP (1) JP4826803B2 (zh)
KR (1) KR101411778B1 (zh)
CN (1) CN101271270B (zh)
TW (1) TWI427409B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008059670A1 (fr) 2006-11-15 2008-05-22 Taiyo Ink Mfg. Co., Ltd. Composition de résine photodurcissable/thermodurcissable, object durci et plaque de câblage imprimée
JP5396833B2 (ja) * 2008-11-28 2014-01-22 Ｊｓｒ株式会社 感放射線性樹脂組成物、液晶表示素子のスペーサーおよび保護膜ならびにそれらの形成方法
JP5210201B2 (ja) * 2009-02-24 2013-06-12 東京応化工業株式会社 感光性樹脂組成物、ドライフィルム、及びパターン形成方法
KR20150061006A (ko) * 2010-05-13 2015-06-03 히타치가세이가부시끼가이샤 감광성 도전 필름, 도전막의 형성 방법 및 도전 패턴의 형성 방법
KR20120014789A (ko) * 2010-08-10 2012-02-20 삼성전자주식회사 표시 장치 제조 방법 및 이를 이용한 표시 장치
EP2762500B1 (en) * 2011-09-27 2017-05-03 Sekisui Plastics Co., Ltd. Spacer particle for resin composition layer and use thereof
JP5814097B2 (ja) * 2011-12-06 2015-11-17 富士フイルム株式会社 マイクロレンズアレイ露光用フォトスペーサ用感光性樹脂組成物
CN104254582A (zh) * 2012-04-24 2014-12-31 昭和电工株式会社 透明粘合粘接片用组合物、其制造方法和透明粘合粘接片
CN103840063A (zh) * 2013-11-15 2014-06-04 芜湖德豪润达光电科技有限公司 Led封装基板及其制作方法
JP6428393B2 (ja) * 2014-03-18 2018-11-28 Jsr株式会社 感放射線性組成物、硬化膜、表示素子及び着色剤分散液
JP6464764B2 (ja) * 2015-01-16 2019-02-06 Jsr株式会社 感放射線性着色組成物、スペーサー、その形成方法及び液晶表示素子
KR102437844B1 (ko) * 2015-04-02 2022-08-31 롬엔드하스전자재료코리아유한회사 착색 감광성 수지 조성물 및 이를 이용한 블랙 컬럼 스페이서

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US5347967A (en) * 1993-06-25 1994-09-20 Mcculloch Corporation Four-stroke internal combustion engine
JP4257758B2 (ja) * 1999-02-25 2009-04-22 大日本印刷株式会社 感光性樹脂組成物及びカラーフィルター
JP4014946B2 (ja) * 2001-09-28 2007-11-28 東亞合成株式会社 感光性パターン形成用硬化性樹脂、その製造方法、硬化性樹脂組成物、カラーフィルター、液晶パネル用基板、及び、液晶パネル
JP4351519B2 (ja) * 2003-11-26 2009-10-28 東洋インキ製造株式会社 感光性組成物およびカラーフィルタ
JP4315010B2 (ja) * 2004-02-13 2009-08-19 Ｊｓｒ株式会社 感放射線性樹脂組成物、表示パネル用スペーサーおよび表示パネル
JP2006282889A (ja) * 2005-04-01 2006-10-19 Jsr Corp 感放射線性樹脂組成物、それから形成された突起およびスペーサー、ならびにそれらを具備する液晶表示素子
JP4862998B2 (ja) * 2005-07-27 2012-01-25 Ｊｓｒ株式会社 側鎖不飽和重合体、感放射線性樹脂組成物および液晶表示素子用スペーサー
TWI388581B (zh) * 2005-08-25 2013-03-11 Jsr Corp Side-chain unsaturated polymers, radiation-sensitive resin compositions, and spacers for liquid crystal display elements
JP2007171320A (ja) * 2005-12-20 2007-07-05 Chisso Corp 感光性組成物およびそれを用いた表示素子

Also Published As

Publication number Publication date
CN101271270A (zh) 2008-09-24
KR20080085760A (ko) 2008-09-24
KR101411778B1 (ko) 2014-06-24
TW200903150A (en) 2009-01-16
TWI427409B (zh) 2014-02-21
JP2008233517A (ja) 2008-10-02
CN101271270B (zh) 2012-08-29

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