JP4826362B2 - マイクロレンズの形成方法 - Google Patents
マイクロレンズの形成方法 Download PDFInfo
- Publication number
- JP4826362B2 JP4826362B2 JP2006178502A JP2006178502A JP4826362B2 JP 4826362 B2 JP4826362 B2 JP 4826362B2 JP 2006178502 A JP2006178502 A JP 2006178502A JP 2006178502 A JP2006178502 A JP 2006178502A JP 4826362 B2 JP4826362 B2 JP 4826362B2
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- Prior art keywords
- etching
- lens material
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- material layer
- gas
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- 238000000034 method Methods 0.000 title claims description 57
- 238000005530 etching Methods 0.000 claims description 283
- 239000000463 material Substances 0.000 claims description 124
- 238000012545 processing Methods 0.000 claims description 99
- 230000008569 process Effects 0.000 claims description 26
- 239000011368 organic material Substances 0.000 claims description 16
- 229910010272 inorganic material Inorganic materials 0.000 claims description 14
- 239000011147 inorganic material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 130
- 238000000151 deposition Methods 0.000 description 27
- 230000008021 deposition Effects 0.000 description 27
- 230000001965 increasing effect Effects 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000295 emission spectrum Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 206010010071 Coma Diseases 0.000 description 3
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- -1 cycloolefin maleic anhydride Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00365—Production of microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Ophthalmology & Optometry (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006178502A JP4826362B2 (ja) | 2006-06-28 | 2006-06-28 | マイクロレンズの形成方法 |
| US11/761,880 US7862732B2 (en) | 2006-06-28 | 2007-06-12 | Method for forming micro lenses and semiconductor device including the micro lenses |
| TW096123363A TWI466272B (zh) | 2006-06-28 | 2007-06-27 | A microlens forming method and a semiconductor device |
| KR1020070063369A KR20080002638A (ko) | 2006-06-28 | 2007-06-27 | 마이크로 렌즈의 형성 방법 및 반도체 장치 |
| CNA2007101268281A CN101097846A (zh) | 2006-06-28 | 2007-06-28 | 微透镜形成方法以及半导体装置 |
| KR1020080131214A KR20090014134A (ko) | 2006-06-28 | 2008-12-22 | 마이크로 렌즈의 형성 방법 및 반도체 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006178502A JP4826362B2 (ja) | 2006-06-28 | 2006-06-28 | マイクロレンズの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008009079A JP2008009079A (ja) | 2008-01-17 |
| JP4826362B2 true JP4826362B2 (ja) | 2011-11-30 |
Family
ID=39011546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006178502A Active JP4826362B2 (ja) | 2006-06-28 | 2006-06-28 | マイクロレンズの形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4826362B2 (ko) |
| KR (2) | KR20080002638A (ko) |
| CN (1) | CN101097846A (ko) |
| TW (1) | TWI466272B (ko) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159748A (ja) * | 2006-12-22 | 2008-07-10 | Toppan Printing Co Ltd | 固体撮像素子の製造方法及び固体撮像素子 |
| CN101949518A (zh) * | 2010-09-29 | 2011-01-19 | 上海铭源光源发展有限公司 | 一种蝇眼透镜结构的制作方法 |
| JP5372102B2 (ja) | 2011-02-09 | 2013-12-18 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP2013077740A (ja) | 2011-09-30 | 2013-04-25 | Sony Corp | 固体撮像素子、固体撮像素子の製造方法、及び、電子機器 |
| TWI669809B (zh) | 2012-05-30 | 2019-08-21 | 日商新力股份有限公司 | Imaging element, imaging device, manufacturing device and method |
| KR101614093B1 (ko) * | 2012-05-30 | 2016-04-20 | 맷슨 테크놀로지, 인크. | 마이크로 렌즈의 형성 방법 |
| JP6099345B2 (ja) * | 2012-09-27 | 2017-03-22 | シャープ株式会社 | レンズおよびその製造方法、固体撮像素子、電子情報機器 |
| US20140183334A1 (en) * | 2013-01-03 | 2014-07-03 | Visera Technologies Company Limited | Image sensor for light field device and manufacturing method thereof |
| JP2015065268A (ja) | 2013-09-25 | 2015-04-09 | ソニー株式会社 | レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器 |
| US10665627B2 (en) | 2017-11-15 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens |
| WO2020122032A1 (ja) * | 2018-12-13 | 2020-06-18 | 凸版印刷株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
| CN110107841B (zh) * | 2019-03-13 | 2023-11-10 | 赣州市众恒光电科技有限公司 | 一种出光角可变的防护工矿灯 |
| US11808959B2 (en) | 2020-08-11 | 2023-11-07 | Himax Technologies Limited | Optical element and wafer level optical module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110952A (ja) * | 2000-10-02 | 2002-04-12 | Sony Corp | オンチップマイクロレンズの形成方法および固体撮像素子の製造方法 |
| JP4450597B2 (ja) * | 2003-09-24 | 2010-04-14 | 東京エレクトロン株式会社 | マイクロレンズの形成方法 |
| JP4830306B2 (ja) * | 2004-06-23 | 2011-12-07 | 凸版印刷株式会社 | 固体撮像素子の製造方法 |
-
2006
- 2006-06-28 JP JP2006178502A patent/JP4826362B2/ja active Active
-
2007
- 2007-06-27 TW TW096123363A patent/TWI466272B/zh active
- 2007-06-27 KR KR1020070063369A patent/KR20080002638A/ko active Search and Examination
- 2007-06-28 CN CNA2007101268281A patent/CN101097846A/zh active Pending
-
2008
- 2008-12-22 KR KR1020080131214A patent/KR20090014134A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200810099A (en) | 2008-02-16 |
| KR20080002638A (ko) | 2008-01-04 |
| CN101097846A (zh) | 2008-01-02 |
| TWI466272B (zh) | 2014-12-21 |
| JP2008009079A (ja) | 2008-01-17 |
| KR20090014134A (ko) | 2009-02-06 |
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