TW200810099A - Method for forming micro lenses and semiconductor device including the micro lenses - Google Patents
Method for forming micro lenses and semiconductor device including the micro lenses Download PDFInfo
- Publication number
- TW200810099A TW200810099A TW096123363A TW96123363A TW200810099A TW 200810099 A TW200810099 A TW 200810099A TW 096123363 A TW096123363 A TW 096123363A TW 96123363 A TW96123363 A TW 96123363A TW 200810099 A TW200810099 A TW 200810099A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- etching
- lens material
- lens
- intermediate layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims abstract description 171
- 239000000463 material Substances 0.000 claims abstract description 129
- 238000012545 processing Methods 0.000 claims abstract description 86
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000011368 organic material Substances 0.000 claims abstract description 19
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 15
- 239000011147 inorganic material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052770 Uranium Inorganic materials 0.000 claims description 48
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 45
- 238000003384 imaging method Methods 0.000 claims description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 230000003362 replicative effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 247
- 239000007789 gas Substances 0.000 description 127
- 238000000151 deposition Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 9
- 229910052707 ruthenium Inorganic materials 0.000 description 9
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- -1 acryl Chemical group 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 3
- 206010010071 Coma Diseases 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 230000000675 anti-caries Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002250 progressing effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001748 luminescence spectrum Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- HCVDENZMQSPJRI-UHFFFAOYSA-N 3,3,4-triethyldodecane Chemical compound CCCCCCCCC(CC)C(CC)(CC)CC HCVDENZMQSPJRI-UHFFFAOYSA-N 0.000 description 1
- 101100118976 Mus musculus Clint1 gene Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005678 polyethylene based resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00365—Production of microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Ophthalmology & Optometry (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
200810099 . (1) 九、發明說明 【發明所屬之技術領域】 本發明是關於形成例如CCD固體攝像元件或液晶顯 示元件等的作爲晶片上透鏡等來使用的微透鏡之技術。 【先前技術】 cCD固體攝像元件或MOS型固體攝像元件，爲了要 φ 增多對像素的入射光量來使感度提高，而以形成微透鏡來 提高對感光部的聚光度的方式構成，對應於各像素之微透 鏡則是例如呈矩陣配列。然後，爲了要提高c C D或C Μ Ο S 感測器的感度，要求增大微透鏡的面積來增多聚光點的光 量。因此，必須縮窄相互間相鄰之微透鏡彼此間的間隔， 具體上必須如第1 6圖所示，將縱向或橫向並排之微透鏡 1 〇 〇彼此間的隔離間隔D1與相互間對角位置上之微透鏡 1 0 0的隔離間隔D 2予以縮窄或是無距離。 φ 這種微透鏡1 0 0係藉由材料來使透過性優異的波長區 域或可以聚光的區域有所不同，透鏡材料最好是依照該用 途來選用有機材料之外，可以自由選擇氮化矽膜或氧化矽 膜的無機材料等的無機材料。然則，爲了要形成微透鏡 1 00，使用例如如第1 7 ( a )圖所示由下側起依序使感光部 或導電膜所形成的下層部分1〇1、與透鏡材料層1〇2、與 由抗鈾膜所形成之遮卓層103層積在一起的半導體晶圓（ 以下，簡稱爲「晶圓」）W。然後，將遮罩層1 〇 3如同圖 所不形成爲透鏡形狀’藉由處理氣體的電漿來蝕刻遮罩層 -4- 200810099 . (2) 、 103及透鏡材料層102，如第17 ( b )圖所示，將遮罩層 103的透鏡形狀複製在透鏡材料層102來形成微透鏡1〇〇 〇 此處，前述遮罩層103係藉由光學光刻製程（ photolithography)進行圖案處理，形成爲透鏡形狀，但會 因曝光製程之後的熱處理而引起軟化。因而，透鏡彼此間 相接近設置，就會因前述軟化，而該表面張力致使透鏡彼 H 此間相接觸，透鏡形狀因此變形。因而，遮罩層1 0 3則是 透鏡彼此間隔著例如〇·2〜0 5 μπι程度的間隔作爲D1來配置 ，使透鏡彼此間不會相接觸，又相互間對角位置上的透鏡 彼此間成爲例如1 μπι程度的間隔作爲D2。於是，也會在 被複製到透鏡材料層1 02之微透鏡1 00彼此間，形成對應 於該D1和D2的間隔。 然而，透鏡材料層1 02由無機材料所構成的情況，被 複製到透鏡材料層1 02之微透鏡1 00彼此間的間隔D 1和 φ D2，會有如第17圖中以間隔D1代表所表示，變成大於 被形成在遮罩層的間隔d 1和d2 (以下，稱爲初期間隔d 1 和d2 )的問題。 此處，例如使用氮化矽膜來作爲透鏡材料之微透鏡的 形成方法，作爲縮窄微透鏡彼此間的距離之手法，在日本 專利文獻1中已有揭示該技術。該技術的透徵爲：使用 SF6氣體和CHF3氣體來作爲處理氣體，並且調節該兩種 氣體的流量，將遮罩層及由Si3N4膜所形成之透鏡材料層 的2層予以蝕刻處理，使堆積物堆積在被形成在遮罩層之 -5- 200810099 . . (3) . 透鏡的側壁來縮窄透鏡彼此間的距離，複製此形狀，藉此 來縮窄微透鏡彼此間的間隔。 然而，依據本發明團隊的驗證，被認爲即使依照該文 獻的手法，仍無法充分縮窄間隔D 1和D2，視爲並不足以 達到解決本發明的課題。然後，這情形變成對於使用無機 材料的微透鏡之固體攝像元件提高感度造成阻礙的一個要 因，因而，無法充分確保依照用途自由選擇有機材料或無 φ 機材料來作爲微透鏡的材料之材料選擇的自由度。 專利文獻1 :日本專利特開2005- 1 0 1 232號公報 【發明內容】 <發明所欲解決之課題> 本發明係鑑於上述問題而形成，其目的是提供有關可 以控制透鏡的形狀，藉由此方式可以使表面積很大但縮窄 相鄰之微透鏡彼此間的間隔的微透鏡之形成方法、及具備 有這種微透鏡之半導體裝置的技術。 <用以解決課題之手段> 因而’本發明的微透鏡之形成方法，其透徵爲，包括 有以下的步驟： 在基板上，形成由無機材料所形成之透鏡材料層的步 驟；及 接著’在該透鏡材料層上，形成由有機材料所形成之 中間層的步驟；及 -6 - 200810099 , (4) . 接著，在該透鏡材料層上，形成由有機材料所形成之 遮罩層的步驟；及 接著，在前述遮罩層形成透鏡形狀的過程；及 接著，對前述遮罩層和中間層，進行蝕刻處理，將遮 罩層的透鏡形狀複製到前述中間層的步驟；及 接著，使用含有SF6氣體和CHF3氣體之處理氣體， 對前述中間層和透鏡材料層，進行蝕刻處理，將中間層的 Φ 透鏡形狀複製到前述透鏡材料層，形成透鏡的步驟。 前述透鏡材料層係由從氮化矽膜和氧化矽膜、以及氮 氧化矽膜所選出之膜所形成，前述遮罩層及中間層進行蝕 刻的步驟則是使用含有碳和氟的氣體來作爲處理氣體。另 外，前述遮罩層可以由抗蝕膜所形成，也可以由以與中間 層相同種類的有機材料所形成之膜所形成。 另外，當前述透鏡材料層爲氮化矽膜時，前述中間層 及透鏡材料層進行蝕刻的步驟，最好是在前述透鏡材料層 Φ 的鈾刻速度除以中間層的蝕刻速度所獲得之鈾刻選擇比變 成1.0以上且1.6以下的蝕刻條件下進行，再更好是在蝕 刻選擇比變成1.4以上且1.6以下的蝕刻條件下進行。另 外，當前述透鏡材料層爲氧化矽膜時，前述中間層及透鏡 材料層進行蝕刻的步驟，最好是在前述透鏡材料層的蝕刻 速度除以中間層的蝕刻速度所獲得之触刻選擇比變成1.7 以上的蝕刻條件下進行，再更好是蝕刻選擇比變成1.8以 上的蝕刻條件下進行。此處，前述蝕刻選擇比係經由調整 例如SF6氣體和CHF3氣體的流量比來控制。 200810099 . (5) . 前述微透鏡可以作爲以對應於固體攝像元件呈行列狀 並排的複數個的各個感光部的方式設置之聚光用的微透鏡 來使用。另外，本發明的半導體裝置，其特徵爲：具備有 以既述的方法進行成膜之微透鏡。 〔發明效果〕 依據本發明，由後述的實施例就會明白，可以進行透 鏡形狀的控制，藉由此方式，可以形成表面積很大的微透 鏡，而可以縮窄柑鄰微透鏡彼此間的間隔。 【實施方式】 首先，以例子來說明本發明的半導體裝置的一例中具 備有微透鏡之CCD固體攝像元件。第1圖爲前述€€0固 體攝像元件的構成的一例，圖中，圖號2具備有呈行列狀 並排在表面部之感光部21及垂直暫存器22之半導體基板 例如Si基板。射入到前述感光部2 1之光藉由光電二極體 來進行光電轉換，藉由垂直暫存器22傳送到輸出部（未 圖示）。在該Si基板2的上層側之感光部2 1以外的區域 ，設有由例如多晶矽（polysilicon )所組成並成爲傳送電 極之導電膜23，在該導電膜23之上側的區域’形成有例 如鋁所組成之遮光膜24。 遮光膜24係用來一面將光射入到感光部21’ 一面抑 制光射入到前述導電膜23，因而’在對應於遮光膜24的 感光部21之區域’形成有用來讓光射入之開□部°在該 -8- 200810099 - (6) ★ 遮光膜24上，形成有例如聚醯亞胺系或聚乙烯系的樹脂 所組成之平坦化膜25。 在前述平坦化膜25上形成有濾色層26，該濾色層26 的上層，在與各別的感光部2 1相對應的區域，形成有由 無機材料所形成之微透鏡3，該徽透鏡3係用來讓光聚光 到感光部21，爲了要聚集更大範圍的光，而以平面上的大 小大於感光部2 1的方式形成。 φ 接著，根據第2圖和第3圖來說明上述微透鏡3之形 成方法。微透鏡3係如同上述，呈行列狀形成在成爲基板 的晶圓W上，在X、Y方向上所相鄰之微透鏡3彼此間之 間形成有間隔D 1，在斜方向上所相鄰之微透鏡3彼此間 之間形成有間隔D2 (參考第1 6圖）。本發明之目的係經 由調整透鏡形狀，使前述間隔D 1和間隔D2小於被形成 在遮罩層3 3的初期間隔d 1、d 2，不過可以藉由縮窄間隔 D1來自動地縮窄間隔D2，故以下，針對間隔D1來進行 Φ 說明。 首先，在Si基板2上形成感光部21及垂直暫存器22 後，形成導電膜23及遮光膜24，接著，平坦化膜25與濾 色層26依序來形成。然後，如第1圖所示，以例如1 μπ1 程度的厚度，在濾色層2 6的上層形成由無機材料例如氮 化矽膜所形成之透鏡材料層3 1，再將中間層3 2與遮罩層 3 3依該順序形成在透鏡材料層3 1的上層。前述中間層3 2 係利用由有機材料所形成的膜，以例如0 · 5〜1 . 5 μπι程度的 厚度所構成，前述遮罩層3 3則是利用由有機材料所形成 -9 - 200810099 - (7) * 的膜，以例如0.6 μπι程度的厚度所構成。 此處，前述氮化砍膜（silicon nitride膜）係指含有 矽（Si )和氮（N )之膜，被推認主成分爲Si3N4膜，不 過以下，以「SiN膜」來進行說明。列舉該SiN膜之形成 方法的一例，原料氣體採用含有矽和氮之氣體，例如二氯 矽烷（SiCl2 )氣和氨（NH4 )氣，由藉由令該兩二氯矽烷 氣和氨氣電漿化，令含在電漿中之矽和氮的各活性種堆積 φ 在濾色層26上所形成。 另外，形成中間層32之前述有機膜係稱爲由有機材 料例如C、Η以及Ο所形成之有機物的膜，可以採用例如 酚系抗鈾膜、丙烯基系抗蝕膜、KrF抗蝕膜、將環烯烴順 丁烯二酸酐作爲平台之抗飩膜（COMA抗蝕膜）。該中間 層32則是以旋轉塗布來塗佈特定的抗蝕液，以此方式， 形成在透鏡材料層3 1上。 進而，前述遮罩層33可以採用KrF系抗蝕膜或I線 Φ 系抗蝕膜、X線系抗鈾膜等的酚系和丙烯基系抗蝕膜、將 環烯烴順丁烯二酸酐作爲平台之抗蝕膜（COMA抗蝕膜） 。該遮罩層3 3則是以旋轉塗布來塗佈特定的抗鈾液，以 此方式，形成在中間層32上，之後藉由光學光刻製程（ photolithography )進行圖案處理，進行熱處理來加工成如 同第1圖所示之特定的透鏡形狀。 接著，如第2 ( a )圖所示，使用含有碳和氟之第1處 理氣體例如CF4氣體及C4F8氣體，將遮罩層33及中間層 32予以鈾刻處理，藉由此方式，將遮罩層33的透鏡形狀 -10- 200810099 辦 (8) . 複製到中間層32。此處，該蝕刻處理被推認爲經由將CF4 氣體及C4F8氣體電漿化，從該兩氣體所解離出來之解離 生成物中的F自由基作爲餓刻種來作用，CF自由基、 (CF2)n自由基等作爲堆積種來作用，一面同時進行F自由 基的飩刻及CF自由基等的堆積，一面逐漸進展蝕刻。此 時，前述堆積種逐漸堆積在遮罩層33之透鏡形狀的周緣 區域，故選擇特定的蝕刻條件的話，經由該堆積，遮罩層 φ 33的透鏡形狀可以藉由透鏡寬度變大，複製該遮罩層33 ，中間層3 2則增大透鏡寬度。 然則，蝕刻初期時，被認爲如第3 ( a )圖中的虛線所 示，變成前述間隔D 1大於初期間隔d 1，但原因並不明確 。然而，中間層3 2係由含有C的有機材料所形成，進行 前述鈾刻時，從中間層32產生含在堆積種的C。因此， 被認爲該產生的C對於前述CF自由基等的堆積不但不會 妨礙反而會促進，所以隨著鈾刻進展，前述變大的間隔 φ D1藉由前述堆積物迅速被埋塡起來，透鏡形狀的擴展速 度變快。 以此方式，同時進行前述飩刻和堆積，遮罩層33的 透鏡形狀本身變大，且對中間層3 2的前述間隔D 1埋塡堆 積物，則如第3 ( b )圖所示，中間層3 2的形狀逐漸變大 ’前述間隔ΕΠ縮窄。然後，選擇最適當的蝕刻條件，使 中間層32的底邊彼此間相接觸，間隔di則變成零，進而 有關間隔D2也儘可能接近零。 接著’如第2 ( b )圖所示，使用由CF4氣體及C4F8 -11 - 200810099 . (9) . 氣體所組成的第2處理氣體，將中間層32及透鏡材料層 3 1予以蝕刻，藉由此方式，將中間層32的透鏡形狀複製 到透鏡材料層3 1。此處，鈾刻處理則是被推認爲將SF6氣 體及CHF3氣體予以電漿化，從該兩氣體所解離出來之解 離生成物中的F自由基作爲飩刻種來作用，C自由基、CF 自由基、CF2自由基、CF3自由基等作爲堆積種來作用， 一面同時進行F自由基的蝕刻及CF自由基等的堆積，一 φ 面逐漸進展飩刻。 此處，針對構成透鏡材料層31之SiN膜，被認爲CF 自由基（CF* ) 、CF2自由基（CF2* ) 、CF3自由基（CF2*) 等都是依照以下的反應來作用。這些反應式中，SiF4f、 N2丨分別表示產生SiF4氣體、N2氣體，C丨表示在透鏡材料 層3 1中C作爲堆積種來作用。(1) EMBODIMENT OF THE INVENTION The present invention relates to a technique of forming a microlens used as a wafer-on-lens or the like, for example, a CCD solid-state imaging device or a liquid crystal display device. [Prior Art] The cCD solid-state imaging device or the MOS-type solid-state imaging device is configured to increase the sensitivity of the light-receiving portion by increasing the amount of incident light to the pixel, and to form a microlens to increase the concentration of the light-receiving portion, corresponding to each pixel. The microlenses are, for example, arranged in a matrix. Then, in order to increase the sensitivity of the c C D or C Μ Ο S sensor, it is required to increase the area of the microlens to increase the amount of light at the condensing point. Therefore, it is necessary to narrow the interval between the mutually adjacent microlenses, and specifically, as shown in FIG. 16, the longitudinally or laterally spaced microlenses 1 〇〇 are spaced apart from each other by a distance D1 from each other. The isolation interval D 2 of the microlens 100 in position is narrowed or has no distance. φ This kind of microlens 100 is made of a material to make a wavelength region excellent in transparency or a region where light can be concentrated. The lens material is preferably selected from organic materials in accordance with the use, and can be freely selected and nitrided. An inorganic material such as an inorganic material of a ruthenium film or a ruthenium oxide film. However, in order to form the microlens 100, for example, the lower portion 1〇1 and the lens material layer 1〇2 formed by the photosensitive portion or the conductive film from the lower side as shown in Fig. 7(a) are used. A semiconductor wafer (hereinafter simply referred to as "wafer") W laminated with a masking layer 103 formed of an anti-uranium film. Then, the mask layer 1 〇 3 is not formed into a lens shape as shown in the figure. The mask layer is etched by the plasma of the processing gas -4-200810099. (2), 103 and the lens material layer 102, such as the 17th ( b), the lens shape of the mask layer 103 is reproduced in the lens material layer 102 to form a microlens 1 . Here, the mask layer 103 is patterned by photolithography. It is formed into a lens shape, but is softened by heat treatment after the exposure process. Therefore, the lenses are disposed close to each other, and the surface tension causes the lenses to contact each other due to the aforementioned softening, and the lens shape is thus deformed. Therefore, the mask layer 110 is disposed such that the lenses are spaced apart from each other by, for example, a distance of 〇2 to 0 5 μm as D1, so that the lenses do not contact each other, and the lenses at mutually diagonal positions are mutually For example, an interval of about 1 μm is taken as D2. Thus, the gaps corresponding to the D1 and D2 are also formed between the microlenses 100 which are copied to the lens material layer 102. However, in the case where the lens material layer 102 is composed of an inorganic material, the intervals D 1 and φ D2 which are copied to the microlenses 100 of the lens material layer 102 are represented by the interval D1 as shown in FIG. It becomes a problem larger than the intervals d 1 and d2 (hereinafter, referred to as initial intervals d 1 and d2 ) formed in the mask layer. Here, for example, a method of forming a microlens using a tantalum nitride film as a lens material is disclosed in Japanese Patent Laid-Open No. Hei. The technique reveals that SF6 gas and CHF3 gas are used as the processing gas, and the flow rates of the two gases are adjusted, and the mask layer and the two layers of the lens material layer formed of the Si3N4 film are etched to form a stack. The material is deposited on the sidewall of the mask to be formed in the mask layer to narrow the distance between the lenses, and to replicate the shape, thereby narrowing the gap between the microlenses. However, according to the verification by the team of the present invention, it is considered that even if the intervals D 1 and D 2 are not sufficiently narrowed according to the method of the document, it is considered that the problem of the present invention is not sufficiently solved. Then, this situation becomes a factor that hinders the sensitivity of the solid-state imaging element using the microlens of the inorganic material, and therefore, it is not possible to sufficiently ensure that the organic material or the material without the φ machine is selected as the material of the material of the microlens according to the use. Degree of freedom. [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-1101 232. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] The present invention has been made in view of the above problems, and an object thereof is to provide a shape in which a lens can be controlled. In this way, a method of forming a microlens having a large surface area but narrowing the interval between adjacent microlenses, and a technique of a semiconductor device including such a microlens can be obtained. <Means for Solving the Problem> Thus, the method for forming a microlens according to the present invention includes the steps of: forming a lens material layer formed of an inorganic material on a substrate; and Next, 'the step of forming an intermediate layer formed of an organic material on the lens material layer; and -6 - 200810099, (4). Next, a mask layer formed of an organic material is formed on the lens material layer And a step of forming a lens shape in the mask layer; and, subsequently, etching the mask layer and the intermediate layer to copy the lens shape of the mask layer to the intermediate layer; and then The step of forming a lens by etching the intermediate layer and the lens material layer using a processing gas containing SF6 gas and CHF3 gas, and copying the Φ lens shape of the intermediate layer to the lens material layer. The lens material layer is formed of a film selected from a tantalum nitride film and a hafnium oxide film, and a hafnium oxynitride film. The step of etching the mask layer and the intermediate layer is to use a gas containing carbon and fluorine as a gas. Process the gas. Further, the mask layer may be formed of a resist film or a film formed of the same type of organic material as the intermediate layer. In addition, when the lens material layer is a tantalum nitride film, the step of etching the intermediate layer and the lens material layer is preferably uranium obtained by dividing the uranium engraving speed of the lens material layer Φ by the etching speed of the intermediate layer. The etching selection is performed under etching conditions of 1.0 or more and 1.6 or less, and more preferably under etching conditions in which the etching selectivity is 1.4 or more and 1.6 or less. In addition, when the lens material layer is a ruthenium oxide film, the step of etching the intermediate layer and the lens material layer is preferably a etch rate selected by the etch rate of the lens material layer divided by the etch rate of the intermediate layer. It is carried out under etching conditions of 1.7 or more, and more preferably under etching conditions in which the etching selectivity is 1.8 or more. Here, the aforementioned etching selectivity is controlled by adjusting the flow ratio of, for example, SF6 gas and CHF3 gas. 20081099. (5) The microlens can be used as a condensing microlens provided so as to correspond to a plurality of photosensitive portions in which the solid-state imaging elements are arranged in a matrix. Further, a semiconductor device of the present invention is characterized in that it has a microlens formed by a method described above. [Effect of the Invention] According to the present invention, it will be understood from the embodiments described later that the lens shape can be controlled, whereby a microlens having a large surface area can be formed, and the interval between the cubital microlenses can be narrowed. . [Embodiment] First, a CCD solid-state imaging device having a microlens in an example of the semiconductor device of the present invention will be described by way of example. Fig. 1 is a view showing an example of the configuration of the above-described solid-state image sensor. In the figure, the figure 2 includes a semiconductor substrate such as a Si substrate which is arranged in a row and is arranged on the surface portion of the light-receiving portion 21 and the vertical register 22. The light incident on the light-receiving portion 21 is photoelectrically converted by the photodiode, and is transmitted to the output portion (not shown) by the vertical register 22. In a region other than the photosensitive portion 21 on the upper layer side of the Si substrate 2, a conductive film 23 composed of, for example, polysilicon and serving as a transfer electrode is provided, and a region 'on the upper side of the conductive film 23 is formed with, for example, aluminum. The light shielding film 24 is composed of. The light shielding film 24 is for suppressing light from entering the conductive film 23 while emitting light to the photosensitive portion 21', and thus 'in the region corresponding to the photosensitive portion 21 of the light shielding film 24' is formed to allow light to be incident thereon. In the light-shielding film 24, a flattening film 25 composed of, for example, a polyimide-based or polyethylene-based resin is formed. A color filter layer 26 is formed on the planarizing film 25, and an upper layer of the color filter layer 26 is formed with a microlens 3 formed of an inorganic material in a region corresponding to each of the photosensitive portions 21, and the emblem The lens 3 is used to condense light to the light-receiving portion 21, and is formed in such a manner that the size on the plane is larger than that of the light-receiving portion 21 in order to collect a larger range of light. φ Next, a method of forming the above-described microlens 3 will be described based on Figs. 2 and 3 . The microlenses 3 are formed in a matrix on the wafer W as a substrate as described above, and the microlenses 3 adjacent in the X and Y directions are formed with a space D1 adjacent to each other in the oblique direction. The microlenses 3 are formed with a space D2 therebetween (refer to Fig. 16). The object of the present invention is to adjust the shape of the lens such that the interval D 1 and the interval D2 are smaller than the initial intervals d 1 and d 2 formed in the mask layer 33, but the interval can be automatically narrowed by narrowing the interval D1. Since D2 is the following, Φ is described for the interval D1. First, after the photosensitive portion 21 and the vertical register 22 are formed on the Si substrate 2, the conductive film 23 and the light shielding film 24 are formed, and then the planarization film 25 and the color filter layer 26 are sequentially formed. Then, as shown in Fig. 1, a lens material layer 3 1 formed of an inorganic material such as a tantalum nitride film is formed on the upper layer of the color filter layer 26 at a thickness of, for example, 1 μπ1, and the intermediate layer 3 2 is further The mask layer 3 3 is formed in the upper layer of the lens material layer 31 in this order. The intermediate layer 3 2 is formed by a film formed of an organic material, for example, having a thickness of about 0.5 to 1.5 μm, and the mask layer 33 is formed of an organic material - 9 - 200810099 - The film of (7) * is composed of, for example, a thickness of about 0.6 μm. Here, the silicon nitride film is a film containing bismuth (Si) and nitrogen (N), and the main component is a Si3N4 film. Hereinafter, the "SiN film" will be described. As an example of the method for forming the SiN film, the material gas is a gas containing helium and nitrogen, such as dichlorosilane (SiCl2) gas and ammonia (NH4) gas, by causing the two dichloromethane gas and the ammonia gas plasma. The active species φ of the ruthenium and nitrogen contained in the plasma are formed on the color filter layer 26. Further, the organic film forming the intermediate layer 32 is referred to as a film of an organic material formed of an organic material such as C, lanthanum, and cerium, and for example, a phenol-based uranium-resistant film, an acryl-based resist film, a KrF resist film, or the like may be used. The cyclic olefin maleic anhydride was used as a platform anti-caries film (COMA resist film). The intermediate layer 32 is formed by applying a specific resist liquid by spin coating, and is formed on the lens material layer 31 in this manner. Further, the mask layer 33 may be a phenol-based or acryl-based resist film such as a KrF-based resist film, an I-line Φ-based resist film or an X-ray uranium-resistant film, or a cycloolefin maleic anhydride. Platform resist film (COMA resist film). The mask layer 33 is coated with a specific anti-uranium liquid by spin coating, and is formed on the intermediate layer 32 in this manner, and then patterned by photolithography to perform heat treatment. The specific lens shape is shown in Figure 1. Next, as shown in the second (a) diagram, the mask layer 33 and the intermediate layer 32 are uranium-etched using a first processing gas containing carbon and fluorine, such as CF4 gas and C4F8 gas, thereby shielding The lens shape of the cover layer 33-10-200810099 (8). Copy to the intermediate layer 32. Here, the etching treatment is considered to be performed by plasma-oxidizing CF4 gas and C4F8 gas, and F radicals in the dissociated product dissociated from the two gases act as hungry species, CF radical, (CF2) The n-radical or the like acts as a deposition species, and simultaneously performs etching of the F radicals and deposition of CF radicals, and gradually progresses etching. At this time, the deposited species are gradually deposited on the peripheral region of the lens shape of the mask layer 33. Therefore, when a specific etching condition is selected, the lens shape of the mask layer φ 33 can be increased by the lens width by the deposition. The mask layer 33 and the intermediate layer 32 increase the lens width. However, at the initial stage of etching, it is considered that the interval D 1 is larger than the initial interval d 1 as indicated by a broken line in the third graph (a), but the reason is not clear. However, the intermediate layer 32 is formed of an organic material containing C, and when the uranium engraving is performed, C contained in the deposited species is generated from the intermediate layer 32. Therefore, it is considered that the C generated by the above does not hinder the deposition of the CF radical or the like, but as the uranium engraving progresses, the enlarged interval φ D1 is quickly buried by the deposit. The expansion speed of the lens shape becomes faster. In this manner, the aforementioned engraving and stacking are simultaneously performed, the lens shape of the mask layer 33 itself becomes large, and the deposit is buried in the interval D 1 of the intermediate layer 32, as shown in FIG. 3(b). The shape of the intermediate layer 3 2 gradually becomes larger, and the aforementioned interval is narrowed. Then, the most appropriate etching conditions are selected such that the bottom edges of the intermediate layer 32 are in contact with each other, and the interval di becomes zero, and the interval D2 is also as close as possible to zero. Then, as shown in the second (b) diagram, the intermediate layer 32 and the lens material layer 31 are etched using the second processing gas composed of CF4 gas and C4F8 -11 - 200810099. (9). In this way, the lens shape of the intermediate layer 32 is copied to the lens material layer 31. Here, the uranium engraving treatment is considered to be to plasmon the SF6 gas and the CHF3 gas, and the F radicals in the dissociated product dissociated from the two gases act as a sputum seed, C radical, CF. Free radicals, CF2 radicals, CF3 radicals, and the like act as a deposition species, and at the same time, F radical etching and CF radicals are deposited at the same time, and a φ plane gradually progresses. Here, it is considered that the CFN radical (CF*), the CF2 radical (CF2*), the CF3 radical (CF2*), and the like act on the SiN film constituting the lens material layer 31 in accordance with the following reaction. In these reaction formulas, SiF4f and N2丨 respectively indicate the generation of SiF4 gas and N2 gas, and C丨 indicates that C acts as a deposition species in the lens material layer 31.
Si3N4 + 12CF*— 3SiF4t+ 2N2T + 12C4 Si3N4+ 6CF2* 3SiF4T + 2Ν2ί + 6C| • S13N4 + 4CF2*^ 3SiF4T + 2N2T + 4C| 此時，由前述C自由基等所組成的堆積種，逐漸堆積 在中間層3 2之透鏡形狀的周緣區域，所以透鏡寬度更加 變大，複製該中間層32，因此透鏡材料層31的透鏡寬度 變大。一方面，鈾刻初期時，變成透鏡材料層的間隔D1 大於初期間隔d 1，這點也與前述同樣。此處，透鏡材料層 31蝕刻中，如前述的反應式所示，與C自由基起反應而 產生氮氣（N2 )，不過被認爲會因該n2氣體來而妨礙到 C自由基的堆積。因而，被推認爲與由有機膜所形成的中 -12 - 200810099 * (10) . 間層32鈾刻作比較，利用前述堆積物來埋塡透鏡材料 3 1的間隔D1不容易進展，透鏡形狀的擴展速度變慢。 然而，如前述，中間層3 2的間隔D1充分縮窄，又 述堆積種有逐漸堆積到中間層32之透鏡形狀的周緣區 的傾向，經由該堆積，中間層3 2的透鏡形狀更加變大 鏡寬度，因而複製該透鏡形狀，則如第2(c)圖、第3 c)圖所示，透鏡材料層31的透鏡形狀變成縮窄前述間 φ D 1。以此方式，選擇最適當的蝕刻條件，形成前述間 D 1變成零，進而有關間隔D2也儘可能接近零之微透鏡 〇 此處，第2圖和第3圖中，微透鏡3的形狀變成半 狀，不過也可以依據膜的種類或構成，改變該曲率，使 平面形狀變成長方形。另外，這種微透鏡3係以例如格 狀配列或蜂槽狀配列的方式配列，不過該配列間隔的X 向與Y方向，可以相同，也可以不相同。 Φ 其次，根據第4圖來說明用來形成前述微透鏡3之 漿裝置。圖中，圖號4爲氣密構成，壁部例如由銘所構 之圓筒狀的處理室，該處理室4具備有上部室4A及大 上部室4A的下部室48，下部室48則是接地。. 處理室4內具備有兼作爲用來大致呈水平支撐屬於 板的晶圓W之下部電極使用之載置台41，該載置台41 例如利用鋁來構成。另外，載置台41的表面設有利用 電吸附力來吸附保持晶圓W之靜電夾盤42。圖中，圖 42a爲靜電夾盤42的電源部。在被載置在靜電夾盤42 層 、少▲ 刖 域 透 ( 隔 隔 圓 該 子 方 電 成 於 基 則 靜 號 的 -13- 200810099 - (11) 表面之晶圓W的周圍配置聚焦環4 3，以電漿產生時，經 由聚焦環43，使電漿集束在載置台41上的晶圓W的方式 構成。前述載置台41的構成係介於絕緣板44支撐在由導 體所組成的支撐台45，介於該支撐台45，利用例如由滾 珠螺桿機構46所組成之升降機構，在載置台4 1表面位於 下部室4B的載置位置與第4圖所示的處理位置之間升降 自如。圖中，圖號47爲例如由不銹鋼（SUS)所構成之蛇 腹（bellows)，支持台45介於該蛇腹47與處理室4相導 通。 在前述載置台41的內部形成有用來令冷媒流通之冷 媒室4 8，藉由此方式，形成爲載置台4 1表面控制在例如 40 °C程度，利用該載置台41的溫度及來自電漿的受熱， 使晶圓W控制在特定溫度例如60°C程度。另外，在載置 台41的內部設有氣體流路49，以對靜電夾盤42與晶圓 W背面之間，供應當作冷卻氣體之背面氣體，調整晶圓w 的溫度的方式構成。 與處理室4之頂壁部分的前述載置台41相對向的區 域係作爲兼作爲上部電極使用的氣體供應室5而構成。在 該氣體供應室5的下面，形成多數個氣體流出孔5a，還在 上面經由當作氣體供應手段之氣體供應路，連接作爲第1 處理氣體源之例如CF4氣體源52A、及C4F8氣體源52B， 並且連接作爲第2處理氣體源之例如SF6氣體源52C、及 CHF3氣體源52D。圖中，MA、MB、MC、MD爲質量流量 控制器，VA、VB、VC、VD爲氣閥，藉由這些元件而構 200810099 ^ (12) - 成流量調整手段。以此方式，形成爲第1處理氣體或是第 2處理氣體經由氣體供應室5,從氣體流出孔5a面對載置 台41，大致均等地供應給該載置台41之載置面的面內全 am 體。 另外，在處理是4之上部室4A的周圍，配置具備有 當作磁場形成手段之複數個各向異性扇形柱狀磁鐵之雙極 環形磁鐵6 1，形成爲可以將特定的磁場例如1 〇〇G施加到 H 上部室4A內。進而，在前述載置台41，經由整合器62 連接當作電漿形成用的高頻供應手段之高頻電源部63，形 成爲特定的頻率例如13.56 MHz的高頻電力，從該高頻電 源部6 3供應給載置台4 1。以此方式，前述氣體供應室5 及載置台41功能上作爲一對的電極，可以在氣體供應室5 與載置台41之間令局頻產生來將上述處理氣體予以電獎 化。這種處理室4內形成爲利用真空排氣手段54，經由壓 力調整手段54A、排氣路53，直到特定的真空度爲止進行 φ 排氣。圖中，圖號55爲晶圓的搬運出入口，圖號56爲用 來開關前述搬運出入口 55之閘閥。 另外，在該電漿處理裝置1 〇，設有當作控制手段之例 如由電腦所組成之控制部57，該控制部57具備有由程式 、記憶體、CPU所組成之資料處理部等，前述程式是以從 控制部57來將控制訊號傳送到流量調整手段5〇或壓力調 整手段54 A等之電漿處理裝置10的各部位，對晶圓w施 予電漿處理的方式組裝命令。另外，例如前述記憶體具備 有寫入處理壓力、處理時間、氣體流量、電力値等之處理 15- 200810099 一 (13) 些 漿 的 碟 57 刻 未 從 的 處 段 分 的 56 〇 部 內 圓 生 電 晶 參數的値之區域，CPU執行程式中的各命令時，讀出這 處理.參數，與該參數値相對應的控制訊號，傳送給該電 處理裝置1 〇的各部位。該程式（也包括有關處理參數 輸入操作或顯示之程式），儲存在電腦記憶媒體例如軟 、光碟、MO (磁光碟）等的記憶體5 8，安裝至控制部 〇 接著，說明利用這種電漿處理裝置1 0來進行之鈾 處理。首先，開啓閘閥（未圖示），經由晶圓搬運部（ 圖示），將該表面具備有第1圖所示的構成之晶圓W， 搬運出入口 5 5搬入到處理室4內，對前述載置位置上 載置台41上進行收授。然後，令載置台41上升到前述 理位置爲止，利用真空排氣手段5 4，經由壓力調整手 54A，直到特定的真空度例如5.3 Pa(40 mTorr)爲止 將處理室4內予以排氣。接著，從氣體供應室5，例如 別以100 seem、30 sccm流量來導入屬於第1處理氣體 CF4氣體及C4F8氣體。 一方面，從高頻電源部63，將特定的頻率例如1 3 . MHz的高頻，例如以1400 W的電力，供應給載置台41 藉由此方式，在屬於上部電極之氣體供應室5與屬於下 電極之載置台4 1之間形成高頻電場。此處，上部室4 a 則利用雙極環形磁鐵6 1來形成水平磁場，所以會在晶 W存在的處理空間形成垂直交錯電磁場，利用藉此所產 之電子的漂移來生成磁控管放電。然後，利用磁控管放 ，使第1處理氣體電漿化，利用該電漿，如同前述蝕刻 -16- 200810099 (14) 、 圓W上的遮罩層33及中間層32。 接著，第1處理氣體停止導入，利用真空排氣手段54 ，經由壓力調整手段54A，直到特定的真空度例如2.65 Pa ( 20 mToi：T )爲止，將處理室4內予以排氣。接著，從 氣體供應室5，例如分別以30 seem、60 seem流量來導入 屬於第2處理氣體的SF6氣體及CHF3氣體。 一方面，從高頻電源部63，將特定的頻率例如13.56 φ MHz的高頻，例如以1400 W的電力，供應給載置台41。 -藉由此方式，如同前述在晶圓W存在的處理空間生成磁 控管放電。然後，利用磁控管放電，使第2處理氣體電漿. 化，利用該電漿，如同前述蝕刻晶圓W上的中間層3 2及 透鏡材料層3 1。以此方式，表面形成有微透鏡3的晶圓 W，利用晶圓搬運部（未圖示），經由搬運出入口 5 5，搬 出到處理室4的外部。 以上，上述的實施形態中，在遮罩層3 3與透鏡材料 φ 層3 1之間設置中間層3 2，首先，在特定的條件下，使用 遮罩層33來蝕刻由有機材料所組成之中間層32，增大該 中間層32的透鏡形狀之後，使用該中間層32來作爲遮罩 _ ，飩刻由無機材料所組成之透鏡材料層3 1。因而，導致透 鏡形狀大於遮罩層3 3之中間層3 2的形狀複製到透鏡材料 層31，以此方式，可以形成透鏡形狀大於遮罩層33之微 透鏡3。藉由此方式，可以比初期間隔d 1還要更縮窄微透 鏡3的間隔D1，選擇蝕刻條件的話，可以形成間隔d 1爲 零，間隔D2儘可能接近零之微透鏡3。 -17- 200810099 . (15) , 此處，假如針對不設置中間層32，將遮罩層33與由Si3N4 + 12CF*— 3SiF4t+ 2N2T + 12C4 Si3N4+ 6CF2* 3SiF4T + 2Ν2ί + 6C| • S13N4 + 4CF2*^ 3SiF4T + 2N2T + 4C| At this time, the deposited species consisting of the aforementioned C radicals are gradually deposited in the intermediate layer. Since the lens width is further increased and the intermediate layer 32 is reproduced, the lens width of the lens material layer 31 becomes large. On the other hand, in the initial stage of uranium engraving, the interval D1 which becomes the lens material layer is larger than the initial interval d1, which is also the same as described above. Here, in the etching of the lens material layer 31, as shown in the above reaction formula, nitrogen gas (N2) is generated by reaction with C radicals, but it is considered that the accumulation of C radicals is hindered by the n2 gas. Therefore, it is considered that compared with the -12-200810099*(10). interlayer 32 uranium formed by the organic film, the interval D1 in which the above-mentioned deposit is used to bury the lens material 31 is not easily progressed, and the lens shape is easily developed. The expansion speed is slower. However, as described above, the interval D1 of the intermediate layer 32 is sufficiently narrowed, and the tendency to accumulate the peripheral region of the lens shape gradually deposited in the intermediate layer 32 is further increased, and the lens shape of the intermediate layer 32 is further increased by the deposition. When the mirror width is reproduced and the lens shape is reproduced, as shown in Figs. 2(c) and 3c), the lens shape of the lens material layer 31 becomes narrowed by the aforementioned φ D 1 . In this way, the most appropriate etching conditions are selected to form the microlens in which the aforementioned interval D1 becomes zero, and the interval D2 is also as close as possible to zero. Here, in the second and third figures, the shape of the microlens 3 becomes It is semi-shaped, but it can also be changed according to the type or composition of the film to make the planar shape into a rectangular shape. Further, the microlenses 3 are arranged in a lattice arrangement or a bee-like arrangement, for example, but the X-direction and the Y-direction of the arrangement intervals may be the same or different. Φ Next, the slurry device for forming the aforementioned microlens 3 will be described based on Fig. 4 . In the figure, Fig. 4 is a hermetic structure, and the wall portion is, for example, a cylindrical processing chamber constructed by the name, and the processing chamber 4 is provided with a lower chamber 48 having an upper chamber 4A and a large upper chamber 4A, and the lower chamber 48 is Ground. The processing chamber 4 is provided with a mounting table 41 which serves as an electrode for supporting the lower portion of the wafer W belonging to the board substantially horizontally. The mounting table 41 is formed of, for example, aluminum. Further, on the surface of the mounting table 41, an electrostatic chuck 42 for adsorbing and holding the wafer W by an electric attraction force is provided. In the figure, Fig. 42a is a power supply portion of the electrostatic chuck 42. A focus ring 4 is disposed around the wafer W on the surface of the electrostatic chuck 40, which is less than ▲ ( ( ( ( -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 -13 4 4 4 4 4 3. When the plasma is generated, the plasma is bundled on the wafer W on the mounting table 41 via the focus ring 43. The mounting table 41 is configured to be supported by the insulating plate 44 supported by the conductor. The table 45 is interposed between the mounting table 45 and the lifting mechanism composed of the ball screw mechanism 46, and is movable between the mounting position of the lower chamber 4B on the surface of the mounting table 41 and the processing position shown in FIG. In the figure, reference numeral 47 is, for example, bellows composed of stainless steel (SUS), and the support table 45 is electrically connected to the processing chamber 4 via the bellows 47. Inside the mounting table 41, a refrigerant is formed to flow. In this manner, the surface of the mounting table 4 1 is controlled to, for example, about 40 ° C. The temperature of the mounting table 41 and the heat from the plasma are controlled to control the wafer W to a specific temperature, for example, 60. The degree of ° C. In addition, the inside of the mounting table 41 The gas flow path 49 is configured to supply a back gas which is a cooling gas between the electrostatic chuck 42 and the back surface of the wafer W, and adjust the temperature of the wafer w. The above-described load of the top wall portion of the processing chamber 4 The region facing the stage 41 is configured as a gas supply chamber 5 that also serves as an upper electrode. A plurality of gas outflow holes 5a are formed on the lower surface of the gas supply chamber 5, and a gas supply as a gas supply means is also provided thereon. The circuit is connected to, for example, a CF4 gas source 52A and a C4F8 gas source 52B as a first process gas source, and is connected to, for example, an SF6 gas source 52C and a CHF3 gas source 52D as a second process gas source. In the figure, MA, MB, MC, MD are mass flow controllers, VA, VB, VC, VD are gas valves, and these components are used to construct 200810099 ^ (12) - flow adjustment means. In this way, it is formed as the first process gas or the first (2) The processing gas is supplied to the mounting table 41 from the gas outflow hole 5a via the gas supply chamber 5, and is supplied to the in-plane total body of the mounting surface of the mounting table 41 substantially uniformly. Surrounded by The bipolar ring magnet 161 of a plurality of anisotropic sector-shaped columnar magnets as a magnetic field forming means is formed so that a specific magnetic field such as 1 〇〇G can be applied to the upper portion 4A of the H. Further, at the stage 41 The high-frequency power supply unit 63, which is a high-frequency supply means for forming a plasma, is connected to the high-frequency power supply having a specific frequency, for example, 13.56 MHz, and is supplied from the high-frequency power supply unit 63 to the mounting table 4 via the integrator 62. 1. In this manner, the gas supply chamber 5 and the mounting table 41 function as a pair of electrodes, and the processing gas can be electrified by generating a local frequency between the gas supply chamber 5 and the mounting table 41. In the processing chamber 4, the vacuum exhausting means 54 is formed, and the pressure adjusting means 54A and the exhaust path 53 are used to exhaust φ until a specific degree of vacuum. In the figure, reference numeral 55 is a conveyance port of the wafer, and reference numeral 56 is a gate valve for opening and closing the conveyance port 55. Further, the plasma processing apparatus 1 is provided with a control unit 57 composed of, for example, a computer as a control means, and the control unit 57 is provided with a data processing unit including a program, a memory, and a CPU. The program is an assembly command for transmitting the control signal from the control unit 57 to each portion of the plasma processing apparatus 10 such as the flow rate adjusting means 5 or the pressure adjusting means 54 A, and applying plasma treatment to the wafer w. In addition, for example, the memory is provided with a process of writing processing pressure, processing time, gas flow rate, power enthalpy, etc. 15-200810099 One (13) Some of the pulps of the pulp are not engraved from the 56-section inner circle In the region of the crystal parameter, when the CPU executes each command in the program, the processing parameter is read, and the control signal corresponding to the parameter 传送 is transmitted to each part of the electric processing device 1 . The program (also includes a program for processing parameter input operations or displays), and a memory stored in a computer memory medium such as a soft disk, an optical disk, an MO (magneto-optical disk), etc., is mounted to the control unit, and then, the use of the power is explained. The uranium treatment is carried out by the slurry treatment device 10 . First, a gate valve (not shown) is opened, and the wafer W having the structure shown in FIG. 1 is provided on the surface via a wafer transfer unit (not shown), and the transfer inlet 5 5 is carried into the processing chamber 4, and the above-described The placement position loading table 41 is accepted. Then, the mounting table 41 is raised to the predetermined position, and the inside of the processing chamber 4 is evacuated by the vacuum adjusting means 54 via the pressure adjusting hand 54A until a specific degree of vacuum is 5.3 Pa (40 mTorr), for example. Next, the first processing gas CF4 gas and the C4F8 gas are introduced from the gas supply chamber 5, for example, at a flow rate of 100 seem and 30 sccm. On the other hand, from the high-frequency power supply unit 63, a specific frequency, for example, a high frequency of 13.3 MHz, for example, 1400 W of electric power, is supplied to the stage 41 by means of the gas supply chamber 5 belonging to the upper electrode and A high-frequency electric field is formed between the mounting stages 41 belonging to the lower electrodes. Here, since the upper chamber 4a forms a horizontal magnetic field by the bipolar ring magnet 61, a vertical staggered electromagnetic field is formed in the processing space where the crystal W exists, and the magnetron discharge is generated by the drift of the electrons generated thereby. Then, the first processing gas is plasma-formed by a magnetron discharge, and the plasma is used as the etching layer -16-200810099 (14), the mask layer 33 on the circle W, and the intermediate layer 32. Then, the first processing gas is stopped and introduced into the processing chamber 4 by the vacuum exhausting means 54 through the pressure adjusting means 54A until a specific degree of vacuum is, for example, 2.65 Pa (20 mToi: T). Next, from the gas supply chamber 5, for example, SF6 gas and CHF3 gas belonging to the second process gas are introduced at a flow rate of 30 seem and 60 seem, respectively. On the other hand, the high frequency power supply unit 63 supplies a high frequency, for example, a high frequency of 13.56 φ MHz, for example, 1400 W, to the mounting table 41. In this way, the magnetron discharge is generated in the processing space in which the wafer W exists as described above. Then, the second processing gas is plasma-treated by magnetron discharge, and the plasma is used to etch the intermediate layer 32 and the lens material layer 31 on the wafer W as described above. In this manner, the wafer W having the microlenses 3 formed on its surface is carried out to the outside of the processing chamber 4 via the conveyance port 5 by a wafer conveyance unit (not shown). As described above, in the above embodiment, the intermediate layer 32 is provided between the mask layer 33 and the lens material φ layer 31. First, under the specific conditions, the mask layer 33 is used to etch the organic material. The intermediate layer 32, after increasing the lens shape of the intermediate layer 32, uses the intermediate layer 32 as a mask _ to engrave the lens material layer 31 composed of an inorganic material. Thus, the shape of the intermediate layer 32 which causes the lens shape to be larger than the mask layer 3 3 is copied to the lens material layer 31, and in this way, the microlens 3 having a lens shape larger than the mask layer 33 can be formed. In this way, the interval D1 of the microlens 3 can be narrowed more than the initial interval d1, and if the etching conditions are selected, the microlens 3 having the interval d1 of zero and the interval D2 as close as possible to zero can be formed. -17- 200810099 . (15) Here, if the intermediate layer 32 is not provided, the mask layer 33 is
SiN膜所組成之透鏡材料層31予以層積’使用含有SF6氣 體及CHF3氣體之處理氣體來形成微透鏡3的情況進行探 討，如同前述，S iN膜蝕刻則會因N2氣體的存在而防礙C 自由基等的堆積，成膜性比有機膜蝕刻還要小’所以前述 堆積物塡入蝕刻初期擴張之透鏡材料層3 1的間隔D 1不容 易進展。 φ 此時，也考慮到藉由長時間進行蝕刻處理，令成膜性 增加，並令前述堆積物塡入前述間隔D1進展，不過前述 SiN膜，爲了要確保膜厚的高面內均等性，Ιμπι程度的膜 厚爲極限，具有無法超過該膜厚的背景，無法加長鈾刻時 間。受到這樣限制之膜厚當中，因無法令成膜性增加，所 以被推認爲比遮罩層3 3的初期間隔d 1還要更縮窄微透鏡 3的間隔D1會有困難。 此處，該透鏡材料層3 1蝕刻係經由控制透鏡材料層 φ 3 1對於中間層32的蝕刻選擇比（（（透鏡材料層3 1的蝕 刻速度）/(中間層32的鈾刻速度）），以下稱爲「蝕刻 選擇比」），由後述的實施例能明白，可以控制微透鏡3 的透鏡形狀。 此時，該蝕刻選擇比可以經由調整SF6氣體及CHF3 氣體的流量比來進行控制。也就是透鏡材料層31蝕刻係 如同前述，從該SF6氣體及chf3氣體所解離出來之解離 生成物中的F自由基作爲蝕刻種來作用，C自由基等作爲 堆積種來作用，所以經由調整這些F自由基的量及（：自由 -18- 200810099 (16) 、 基等的量，就可以調整蝕刻性或堆積性，藉由此方式’可 以進行蝕刻選擇比的控制。 然後，由後述的實施被認定：前述蝕刻選擇比很小’ 則相對於飩刻性的堆積性變小，一方面前述触刻選擇比很 大，則相對於鈾刻性的堆積性變大，而透鏡形狀變大、前 述蝕刻選擇比過度變大，則相對於蝕刻性的堆積性過度變 大，蝕刻速度降低，而會發生蝕刻停止、蝕刻選擇比會對 φ 晶圓面內之触刻速度的均等性造成影響，因而必須根據這 些因素來求取蝕刻選擇比的適當範圍。 因而，在衡量生產線上的流量的處理時間內，控制透 鏡形狀，而且在提高透鏡形狀的狀態下，形成微透鏡3， 最好是在前述蝕刻選擇比成爲1.0以上且1·6以下的蝕刻 條件下，進行飩刻處理，尤其蝕刻選擇比爲1 ·4以上且 1.6以下的範圍的話，可以形成具備有與初期間隔dl相同 程度或更小的間隔D1之微透鏡3，進而經由壓縮蝕刻選 φ 擇比，可以形成間隔D1爲零，間隔D2儘可能接近零之 微透鏡。 另外，藉由控制供應到處理容器4內之高頻電力的供 應量或處理容器4內的處理壓力，如同後述也可以控制透 鏡形狀，又可以調整間隔D1的大小。該理由被推認爲因 藉由變化前述高頻電力的供應量或處理壓力，變化施加給 SF6氣體及CHF3氣體的能量，藉由此方式使從SF6氣體及 CHF3氣體所解離出來之解離生成物中的F自由基或C自 由基等的產生量不相同，故即使SF6氣體與CHF3氣體的 -19- 200810099 ， (17) » 流量比相同，對餽刻有幫助之F自由基的量或對堆積有幫 助之C自由基等的量仍會變化之故。因此’在透鏡材料層 3 1的飩刻速度變成大於中間層32的蝕刻速度的鈾刻條件 下進行触刻，最好是用來縮窄間隔D 1 ’藉由調整餓刻選 擇比、高頻電力的供應量或處理壓力等之蝕刻處理的參數 ，可以形成透鏡形狀的調整範圍變大’間隔D1或間隔D2 接近零或爲零之微透鏡3° φ 以上，本發明中，應用由有機材料所形成的遮罩層33 及中間層3 2、以及由無機材料所組成的透鏡材料層3 1之 3層構造，來形成微透鏡，所以經選擇蝕刻條件，可以形 成能夠控制透鏡形狀，而透鏡寬度大於遮罩層3 3的透鏡 形狀，相鄰透鏡彼此間的透鏡間距離（間隔 D1 )爲 0〜0·1 μηι程度之極小的由無機材料所組成之微透鏡3。這 種微透鏡3因對感光部2 1的聚光度很大，所以可以確保 很高的感度。 φ 如此由無機材料所形成之微透鏡3可以達到實用化， 所以提局依照目的的波長區域，從有機材料或無機材料來 自由選擇微透鏡3的材料之材料選擇的自由度。另外，預 測經由將由不同材料所形成的微透鏡3，橫跨複數層設置 在固體攝像元件，也能夠藉由各微透鏡3來選擇性進行各 別特定波長領域的聚光，補償各別的不足夠波長領域。 以上’前述第1處理氣體可以使用從Cf4氣體、sf6 氣體、Cd6氣體、CsFs氣體所選出的氣體、與從C4F8氣 體、C5F8氣體、C4F8氣體、c2F6氣體、C3F8氣體所選出 -20- 200810099 . (18) . 的氣體組合起來之氣體。另外，第2處理氣體可以是以氧 (〇2)氣組合在SF6氣體及CHF3氣體中的方式形成。 另外，前述中間層3 2及遮罩層3 3都是由有機材料所 構成，不過該兩層也可以由相同種類的膜來構成，還可以 利用不同種類的膜來構成。該兩層由相同的膜構成的情況 ，前述遮罩層3 3及中間層3 2則是由例如酚系抗蝕膜、丙 烯基系抗鈾膜、KrF抗蝕膜、將環烯烴順丁烯二酸酐作爲 φ 平台之抗蝕膜（COMA抗触膜）所構成。此情況下，遮罩 層33與中間層32的蝕刻選擇比變成相同，所以遮罩層33 的形狀直接複製到中間層32，對於透鏡形狀容易進行控制 的這點則具有效果。 進而，前述中間層32也可以形成1層以上的複數層 ，這些層可以由相同種類的有機膜或不同種類的有機膜形 成。設置層積複數層的中間層，中間層32的透鏡形狀之 調整的幅度則會變大，複製這形狀的話，針對微透鏡3的 φ 透鏡形狀，調整的幅度也會變大。 進而，形成透鏡材料層31的無機材料，可以使用氧 化矽膜或氮氧化矽膜等。此處，針對使用氧化矽膜來作爲 透鏡材料層31的情況進行說明。該氧化矽膜係指含有矽 和氧（〇 )的膜，一般所熟知的是二氧化矽膜（Si02膜） ，所以此處則以Si02膜來進行說明。首先，列舉Si〇2膜 之形成方法的一例，用來形成s i Ο 2膜的原料氣體係使用 例如四乙基砍垸氣體（tetraethylorthosilicate，Si(OC2H5)4 )等之有機來源的蒸氣及氧氣，令該四乙基矽烷氣體及氧 -21 - 200810099 . (19) . 氣電漿化，利用含在電漿中的矽和氧之各種活性種，使例 如4μιη膜厚的Si02膜形成在前述濾色層26的上面。 然後，由Si02膜所組成之透鏡材料層31的飩刻處理 則是與SiN膜的飩刻處理同樣，被推論爲將SF6氣體及 CF3氣體予以電漿化，從該兩氣體所解離出來之解離生成 物中的F自由基作爲蝕刻種來作用，C自由基、CF自由 基、CF2自由基、CF3自由基等作爲堆積種來作用，一面 φ 同時進行F自由基的蝕刻及CF自由基等的堆積，一面逐 漸進展蝕刻。 此時，針對Si〇2膜，被認爲CF自由基（CF* )、 CF2自由基（CF2* ) 、CF3自由基（CF2* )等都是依照以 下的反應來作用。 3/4Si02+ CF3* ^3/4SiF4+ CO+ 1/20 l/2Si02+ CF2* ->l/2SiF4+ CO l/4Si02 + CF*—l/4SiF4 + 1/2CO + 1/2C φ 如此，Si02膜蝕刻被認爲產生O及CO，並且C作爲 堆積成分來放出，利用該〇或co的影響，使成膜性小於 鈾刻屬於有機膜的中間層32的情況，不過該〇或CO被 推認爲妨礙C自由基等堆積的程度小於SiN膜蝕刻時所產 生的N2氣體。另外，由後述的實施例能夠明白，不會發 生蝕刻選擇比過度變大而不進展時刻的現象，所以預測隨 著蝕刻選擇比的增加，能夠形成很大透鏡形狀。 因而，透鏡材料層31爲Si02膜的情況，在前述鈾刻 選擇比變成1 · 7以上的鈾刻條件下進行蝕刻處理，在衡量 -22- 200810099 (20) . 生產線上的流量的處理時間內，透鏡形狀可以控制在所要 的範圍的狀態下，可以形成透鏡3，選擇蝕刻條件’就可 以形成間隔D 1小於初期間隔d 1，進而間隔D1爲零’間 隔D2儘可能接近零之微透鏡。另外，以該飩刻選擇比來 進行蝕刻的情況，由後述的實施例能夠明白，蝕刻速度的 面內均等性良好。 如此，透鏡材料層31爲SiN膜、Si02膜的情況，選 φ 擇蝕刻條件，就可以形成間隔D 1、D2爲零或儘可能接近 零的微透鏡3，因而被推認爲將氮氧化矽膜作爲材料來形 成微透鏡3的情況也會獲得同樣的效果。該氮氧化矽膜爲 含有矽和氮和氧的膜，此處則是SiON膜，不過SiON膜 係使用例如含有矽和氮和氧的處理氣體，藉由電漿CVD ( chemical vapor deposition)法戶斤开多成。 另外，本發明的微透鏡，也可以使用第5(a)圖或第 5 ( b)圖所示的構造之形成在CCD固體攝像元件或CMOS • 感測器上之微透鏡3。第5(a)圖爲除了形成在表面的微 透鏡3之外還具備有層內微透鏡27的例子，該層內微透 鏡27係在第1圖的構造中被形成在濾色層26的下層。圖 中，圖號28爲形成在層內微透鏡27的表面之平坦化膜（ 也有只有濾色層26的情況），其他的構造則與第1圖所 示的構造相同。這種構造係表面的微透鏡3以本發明的手 法所形成。另外，第5 ( b )圖爲在第1圖的構造中在遮光 膜24的上層直接形成微透鏡3的例子，該表面的微透鏡3 係以本發明的手法所形成。 -23- 200810099 . (21) (實施例） 以下，針對爲了要確認本發明的效果之實施例進行說 明。以下的實驗中，如第1圖所示，使用：在Si基板2 上形成有感光部21、垂直暫存器22、導電膜23以及遮光 膜24，再在該上方，從下側起依序形成有平坦化膜25、 濾色層2 6、透鏡材料層3 1、中間層3 2以及形成爲特定的 透鏡形狀之遮罩層3 3之晶圓W。飩刻裝置則是採用上述 第4圖所示的電漿鈾刻裝置。 1、透鏡材料層3 1由SiN膜所形成的情況 <實施例1 _ 1 > 如第6 ( a )圖所示，針對在膜厚1 μπι之透鏡材料層 3 1的上面，依序形成有由酚系抗飩膜所形成之中間層3 2 、及由酚系抗蝕膜所形成，被形成爲特定的透鏡形狀之遮 罩層3 3之8英吋的晶圓W，在以下的條件下進行蝕刻， 針對遮罩層3 3、中間層3 2、透鏡材料層3 1 (微透鏡3 ) 之各別的透鏡形狀，使用掃描型電子顯微鏡（SEM )來將 該平面形狀予以照像，根據該照像，分別針對遮罩層3 3、 中間層3 2、透鏡材料層3 1，測定間隔D 1。利用前述S Ε Μ 照像的照片（以下，稱爲「SEM照片」）所呈現的形狀、 及前述間隔D1 —倂顯示在第6 ( a )圖中。 〔中間層3 2的蝕刻條件〕 -24- 200810099 • (22) . 處理热體 高頻電源的電力 處理壓力 載置台的設定溫度 處理時間The lens material layer 31 composed of a SiN film is laminated. The case where the microlens 3 is formed using a processing gas containing SF6 gas and CHF3 gas is discussed. As described above, the SiN film etching is hindered by the presence of N2 gas. The deposition of C radicals or the like is smaller than the organic film etching. Therefore, the interval D 1 of the lens material layer 31 which is expanded at the initial stage of the deposition of the deposit is not easily progressed. φ In this case, it is considered that the film formation property is increased by the etching treatment for a long period of time, and the deposit is caused to progress in the interval D1. However, in order to ensure high in-plane uniformity of the film thickness, the SiN film is required. The film thickness of Ιμπι is the limit, and the background cannot exceed the film thickness, and the uranium engraving time cannot be lengthened. Among the film thicknesses thus restricted, since the film formability cannot be increased, it is considered that it is difficult to narrow the interval D1 of the microlenses 3 more than the initial interval d1 of the mask layer 33. Here, the lens material layer 31 is etched by controlling the etching selectivity ratio of the lens material layer φ 3 1 to the intermediate layer 32 (((etching speed of the lens material layer 31)/(the uranium engraving speed of the intermediate layer 32)) Hereinafter, it is understood that the "etching selection ratio" is hereinafter, and it can be understood from the examples described later that the lens shape of the microlens 3 can be controlled. At this time, the etching selection ratio can be controlled by adjusting the flow ratio of the SF6 gas and the CHF3 gas. In other words, the etching of the lens material layer 31 is as described above, and the F radicals in the dissociated product dissociated from the SF6 gas and the chf3 gas act as an etching species, and C radicals or the like act as a deposition species. The amount of F radicals and (: Free-18-200810099 (16), basis, etc., the etching property or the deposition property can be adjusted, and the etching selectivity can be controlled by this method. Then, the implementation will be described later. It is considered that the above-described etching selectivity is small, and the deposition property with respect to the engraving property is small. On the other hand, when the above-described etch selectivity is large, the deposition property with respect to uranium engravability is increased, and the lens shape is increased. When the etching selectivity is excessively increased, the deposition property with respect to the etching property is excessively increased, the etching rate is lowered, and etching is stopped, and the etching selectivity ratio affects the uniformity of the etch rate in the φ wafer plane. Therefore, it is necessary to determine the appropriate range of the etching selectivity ratio based on these factors. Thus, in the processing time for measuring the flow rate on the production line, the lens shape is controlled, and the lens is raised. In the state of forming the microlens 3, it is preferable to perform the etching process under the etching conditions in which the etching selectivity is 1.0 or more and 1.6 or less, and in particular, the etching selection ratio is in the range of 1. 4 or more and 1.6 or less. In this case, the microlens 3 having the interval D1 which is equal to or smaller than the initial interval d1 can be formed, and the φ ratio can be selected by compression etching to form a microlens having an interval D1 of zero and an interval D2 as close as possible to zero. By controlling the supply amount of the high-frequency power supplied into the processing container 4 or the processing pressure in the processing container 4, the lens shape can be controlled as described later, and the size of the interval D1 can be adjusted. This reason is considered to be due to The amount of the high-frequency power supplied or the processing pressure is changed, and the energy applied to the SF6 gas and the CHF3 gas is changed, whereby the F radical or C radical in the dissociated product dissociated from the SF6 gas and the CHF3 gas is changed in this manner. The amount of generation of the same is not the same, so even if the flow ratio of SF6 gas and CHF3 gas is the same as that of -19-200810099, (17) », the amount of F radicals that are helpful for feeding or the accumulation of The amount of C radicals and the like may still vary. Therefore, the engraving is performed under the uranium engraving condition in which the engraving speed of the lens material layer 31 becomes greater than the etching rate of the intermediate layer 32, preferably for narrowing. The interval D 1 ' can be adjusted by adjusting the parameters of the hungry selection ratio, the supply amount of the high-frequency power, or the processing pressure, etc., so that the adjustment range of the lens shape becomes large, and the interval D1 or the interval D2 is close to zero or zero. In the present invention, the lens layer 33 and the intermediate layer 32, which are formed of an organic material, and the three-layer structure of the lens material layer 31 composed of an inorganic material are used to form the microlens, so that the lens is 3° φ or more. By selecting the etching conditions, it is possible to form a lens shape capable of controlling the lens shape and having a lens width larger than that of the mask layer 33, and the inter-lens distance (interval D1) between adjacent lenses is extremely small to the extent of 0 to 0·1 μηι. A microlens 3 composed of an inorganic material. Since the microlens 3 has a large concentration of the photosensitive portion 21, it can ensure high sensitivity. φ The microlens 3 formed of the inorganic material can be put into practical use, so that the degree of freedom in material selection of the material of the microlens 3 can be freely selected from the organic material or the inorganic material in accordance with the wavelength region of interest. Further, it is predicted that by providing the microlenses 3 made of different materials and arranging the plurality of layers on the solid-state imaging element, it is also possible to selectively condense the respective specific wavelength regions by the respective microlenses 3, thereby compensating for the respective A sufficient wavelength field. The above-mentioned first processing gas can be selected from Cf4 gas, sf6 gas, Cd6 gas, CsFs gas, and selected from C4F8 gas, C5F8 gas, C4F8 gas, c2F6 gas, C3F8 gas, -20-200810099. 18) . The gas combined with the gas. Further, the second processing gas may be formed by combining oxygen (〇2) gas in the SF6 gas and the CHF3 gas. Further, the intermediate layer 32 and the mask layer 33 are both made of an organic material, but the two layers may be composed of the same type of film, or may be formed by using different types of films. In the case where the two layers are composed of the same film, the mask layer 3 3 and the intermediate layer 32 are made of, for example, a phenol-based resist film, a acryl-based uranium-proof film, a KrF resist film, and a cycloolefin butylene. The dianhydride is composed of a resist film (COMA anti-touch film) of the φ platform. In this case, since the etching selection ratio of the mask layer 33 and the intermediate layer 32 becomes the same, the shape of the mask layer 33 is directly copied to the intermediate layer 32, and this is advantageous in that the lens shape is easily controlled. Further, the intermediate layer 32 may be formed of a plurality of layers of one or more layers, and these layers may be formed of the same type of organic film or different types of organic films. When the intermediate layer of the plurality of layers is laminated, the adjustment of the lens shape of the intermediate layer 32 is increased. When the shape is reproduced, the amplitude of the adjustment of the φ lens shape of the microlens 3 is also increased. Further, as the inorganic material forming the lens material layer 31, a ruthenium oxide film or a ruthenium oxynitride film or the like can be used. Here, a case where a hafnium oxide film is used as the lens material layer 31 will be described. The ruthenium oxide film refers to a film containing ruthenium and oxygen (〇), and a ruthenium dioxide film (SiO 2 film) is generally known. Therefore, the SiO 2 film will be described here. First, an example of a method for forming a Si〇2 film is used. The raw material gas system for forming the si Ο 2 film uses, for example, organic-derived vapor and oxygen such as tetraethylorthosilicate (Si(OC2H5)4). The tetraethyl decane gas and oxygen-21 - 200810099. (19) . Gas-electric slurry, using various active species of cerium and oxygen contained in the plasma, so that a SiO 2 film having a film thickness of, for example, 4 μm is formed in the foregoing filter. The upper surface of the color layer 26. Then, the etching process of the lens material layer 31 composed of the SiO 2 film is the same as the etching process of the SiN film, and it is inferred that the SF6 gas and the CF3 gas are plasma-treated, and the dissociation from the two gases is dissociated. The F radical in the product acts as an etching species, and C radicals, CF radicals, CF2 radicals, CF3 radicals, and the like act as a deposition species, and φ simultaneously simultaneously etches F radicals and CF radicals. Stacking, and gradually progressing etching. In this case, it is considered that the CF ) 2 film, the CF 2 radical (CF 2 * ), the CF 3 radical (CF 2 * ), and the like act on the Si 〇 2 film in accordance with the following reaction. 3/4Si02+ CF3* ^3/4SiF4+ CO+ 1/20 l/2Si02+ CF2* ->l/2SiF4+ CO l/4Si02 + CF*—l/4SiF4 + 1/2CO + 1/2C φ So, the SiO 2 film is etched It is considered that O and CO are generated, and C is released as a deposition component, and the film formation property is smaller than that of the intermediate layer 32 which is an organic film by the influence of the ruthenium or co. However, the ruthenium or CO is considered to hinder C. The degree of accumulation of radicals or the like is smaller than that of the N 2 gas generated when the SiN film is etched. Further, as will be understood from the examples described later, the phenomenon that the etching selection ratio is excessively large and the progress time is not increased does not occur. Therefore, it is predicted that a large lens shape can be formed as the etching selection ratio increases. Therefore, in the case where the lens material layer 31 is a SiO 2 film, etching treatment is performed under the uranium engraving condition in which the uranium engraving selection ratio becomes 1.7 or more, in the processing time of measuring the flow rate on the production line -22-200810099 (20). The lens shape can be controlled in a desired range, and the lens 3 can be formed. The etching condition can be selected to form a microlens having an interval D1 smaller than the initial interval d1 and thus the interval D1 is zero, and the interval D2 is as close as possible to zero. Further, in the case where the etching is performed by the etching selection ratio, it is understood from the examples described later that the in-plane uniformity of the etching rate is good. Thus, in the case where the lens material layer 31 is a SiN film or a SiO 2 film, the microlens 3 having the interval D 1 , D 2 being zero or as close as possible to zero can be formed by selecting the etching condition, and thus it is considered that the yttrium oxynitride film is formed. The same effect can be obtained also in the case where the microlens 3 is formed as a material. The ruthenium oxynitride film is a film containing ruthenium and nitrogen and oxygen, and here is a SiON film, but the SiON film is made of, for example, a treatment gas containing ruthenium and nitrogen and oxygen, by a chemical vapor deposition method. Jin Jian opened more. Further, in the microlens of the present invention, the microlens 3 formed on the CCD solid-state imaging element or the CMOS sensor can be used as shown in Fig. 5(a) or Fig. 5(b). Fig. 5(a) shows an example in which an in-layer microlens 27 is provided in addition to the microlens 3 formed on the surface, and the intra-layer microlens 27 is formed in the color filter layer 26 in the configuration of Fig. 1. Lower level. In the figure, reference numeral 28 is a planarizing film formed on the surface of the intra-layer microlens 27 (there is also a case where only the color filter layer 26 is provided), and other structures are the same as those shown in Fig. 1. The microlens 3 of such a structure is formed by the method of the present invention. Further, Fig. 5(b) shows an example in which the microlens 3 is directly formed on the upper layer of the light-shielding film 24 in the structure of Fig. 1, and the microlens 3 on the surface is formed by the method of the present invention. -23- 200810099. (21) (Embodiment) Hereinafter, an embodiment for confirming the effects of the present invention will be described. In the following experiment, as shown in Fig. 1, a photosensitive portion 21, a vertical register 22, a conductive film 23, and a light-shielding film 24 are formed on the Si substrate 2, and then the upper side is sequentially arranged from the lower side. A wafer W having a planarizing film 25, a color filter layer 26, a lens material layer 31, an intermediate layer 3, and a mask layer 33 formed into a specific lens shape is formed. The engraving apparatus uses the plasma uranium engraving apparatus shown in Fig. 4 above. 1. Case where the lens material layer 31 is formed of a SiN film <Example 1 _ 1 > As shown in Fig. 6(a), for the lens material layer 3 1 having a film thickness of 1 μm, sequentially An intermediate layer 3 2 formed of a phenolic anti-caries film and an 8 inch wafer W formed of a mask layer 33 formed of a phenol-based resist film are formed. The etching is performed under the conditions, and the respective lens shapes of the mask layer 3 3, the intermediate layer 3 2, and the lens material layer 3 1 (microlens 3 ) are scanned by a scanning electron microscope (SEM). For example, according to the photograph, the interval D 1 is measured for each of the mask layer 3 3 , the intermediate layer 3 2 , and the lens material layer 31 . The shape represented by the photograph of the S Ε 照 (hereinafter referred to as "SEM photograph") and the interval D1 - 倂 are displayed in the sixth (a) diagram. [Etching conditions of the intermediate layer 3 2] -24- 200810099 • (22) . Handling of hot bodies Power of high-frequency power supply Processing pressure Setting temperature of the mounting table Processing time
:CF4/C4Fg= 1 00/30 seem ：1400 W :5.3 Pa ( 4 0 mTorr):CF4/C4Fg= 1 00/30 seem :1400 W :5.3 Pa ( 4 0 mTorr)
:0〇C :利用epd (電漿發光光譜分析 儀的終點檢測位置裝置），進行 1 99秒的蝕刻。此處，触刻時的終 點則是根據CF自由基的發光光譜 強度（波長260 nm)與CN自由 基的發光光譜強度（波長 3 87.2 nm )的比率等的運算結果來進行 檢測，停止蝕刻 〔透鏡材料層3 1的蝕刻條件〕 處理氣體 ：SF6/CHF3/03 = 60/50/25 seem 蝕刻選擇比 ：0.95:0〇C : Etching was performed for 1 99 seconds using epd (the end point detection position device of the plasma luminescence spectrum analyzer). Here, the end point at the time of the etch is detected based on the calculation result of the ratio of the luminescence intensity (wavelength 260 nm) of the CF radical to the luminescence intensity of the CN radical (wavelength 3 87.2 nm), and the etching is stopped. Etching conditions of the lens material layer 31 1 Processing gas: SF6/CHF3/03 = 60/50/25 seem Etching selection ratio: 0.95
高頻電源的電力 ：400 W 處理壓力 ：2.65Pa(20mTorr) 載置台的設定溫度：〇°c 處理時間 ：直到透鏡材料層3 1鈾刻7 5 0 nm 爲止進行，停止鈾刻 (比較例1 ) 如第6 ( b )圖所示，針對在膜厚1 之透鏡材料層 -25- 200810099 (23) . 31的上面，依序形成由酚系抗蝕膜所形成，呈特定的形狀 形成之遮罩膜33之晶圓W，在以下的條件下進行触刻， 再以掃描型電子顯微鏡（SEM)，針對遮罩膜33、透鏡材 料層31之透鏡形狀的平面形狀進行照像，根據該照片， 針對遮罩膜33 '透鏡材料層31測定間隔D1。該SEM照 片所呈現的形狀、及前述間隔D1 —倂顯示在第6(b)圖 中〇 〔透鏡材料層3 1的蝕刻條件〕 處理氣體 ：SF6/CHF3- 60/60 seem 蝕刻選擇比 ：1.09 高頻電源的電力 ：400 W 處理壓力 ：2.65Pa(20mTorr)Power of high-frequency power supply: 400 W Processing pressure: 2.65Pa (20mTorr) Setting temperature of the mounting table: 〇°c Processing time: Until the lens material layer 3 1 uranium engraved 7 5 0 nm, the uranium engraving is stopped (Comparative Example 1 As shown in Fig. 6(b), for the lens material layer -25-200810099 (23). 31 of the film thickness 1, a phenol-based resist film is formed in order to form a specific shape. The wafer W of the mask film 33 is photographed under the following conditions, and the planar shape of the lens shape of the mask film 33 and the lens material layer 31 is photographed by a scanning electron microscope (SEM). Photograph, the interval D1 is measured for the mask film 33' lens material layer 31. The shape exhibited by the SEM photograph and the interval D1 - 倂 are shown in Fig. 6(b) 〇 [etching conditions of the lens material layer 31] Processing gas: SF6/CHF3-60/60 seem Etching selection ratio: 1.09 High-frequency power supply: 400 W Processing pressure: 2.65Pa (20mTorr)
載置台的設定溫度：4〇°C 處理時間 ：直到透鏡材料層3 1蝕刻7 5 0 nm φ 爲止進行，停止蝕刻 (實驗結果） 有關前述間隔Dl(dl)，實施例1中，遮罩膜33爲 3 20 nm，中間層32爲100 nm，微透鏡3爲3 5 8 nm，比較 例1中，遮罩膜33爲5 00 nm，微透鏡3爲700 nm。因此 ，被認定：前述間隔D1則是實施例1中微透鏡3比遮罩 膜3 3大約寬1 · 1倍’相對於此比較例1中微透鏡3比遮 罩膜33大約寬1.4倍。 -26- 200810099 (24) ♦ 此處，有關飩刻選擇比，實施例1爲0·95 ’比較例1 爲1. 〇 9，比較例1較大，蝕刻選擇比較大則堆積性較強’ 透鏡形狀容易變大，但也因而被認定實施例1可以增大透 鏡形狀，縮窄間隔D1，因此本發明的有效性被理解。另 外，也確認：實施例1中之中間層3 2的間隔D1變成窄於 遮罩膜3 3的間隔D1。 φ <實施例1-2:有關調整蝕刻選擇比進行透鏡形狀的控制 > 針對與實施例1-1同樣的晶圓W，在0.95〜1.75的範 圍改變蝕刻選擇比，對透鏡材料層3 1進行蝕刻，至於遮 罩膜3 3、中間層3 2、透鏡材料層3 1，則針對平面形狀及 剖面形狀進行SEM照片的照像，觀察透鏡形狀的變化， 並且根據SEM照片，測定各別的間隔D1 ( dl )及蝕刻深 度。 ^ 此處，飩刻深度（飩刻量）則是成爲透鏡材料層（Setting temperature of the mounting table: 4 〇 ° C Processing time: Until the lens material layer 3 1 is etched by 7 50 nm φ, the etching is stopped (experimental result) Regarding the aforementioned interval D1 (dl), the mask film in the first embodiment 33 is 3 20 nm, the intermediate layer 32 is 100 nm, and the microlens 3 is 3 5 8 nm. In Comparative Example 1, the mask film 33 is 500 nm, and the microlens 3 is 700 nm. Therefore, it was confirmed that the above-mentioned interval D1 is that the microlens 3 in the first embodiment is about 1⁄1 times wider than the mask film 33. The microlens 3 in Comparative Example 1 is about 1.4 times wider than the mask film 33. -26- 200810099 (24) ♦ Here, regarding the engraving selection ratio, Example 1 is 0·95 'Comparative Example 1 is 1. 〇9, Comparative Example 1 is larger, and the etching selectivity is larger, the accumulation is stronger' The shape of the lens tends to become large, but it is therefore recognized that the embodiment 1 can increase the lens shape and narrow the interval D1, so the effectiveness of the present invention is understood. Further, it was also confirmed that the interval D1 of the intermediate layer 32 in the first embodiment became narrower than the interval D1 of the mask film 33. φ <Example 1-2: Controlling the shape of the lens by adjusting the etching selectivity ratio> For the wafer W similar to Example 1-1, the etching selectivity was changed in the range of 0.95 to 1.75, and the lens material layer 3 was changed. 1 etching is performed, and as for the mask film 3 3, the intermediate layer 3 2, and the lens material layer 3 1, the SEM photograph is taken for the planar shape and the cross-sectional shape, and the change in the shape of the lens is observed, and each individual is measured according to the SEM photograph. The interval D1 ( dl ) and the etching depth. ^ Here, the engraving depth (the engraving amount) is the layer of the lens material (
SiN膜）3 1之蝕刻量的指標，由第7 ( a )圖所示的中間層 32進行蝕刻後之透鏡材料層3 1的厚度X、與第7 ( b )圖 所示的透鏡材料層31進行飩刻後之透鏡材料層31的厚度 Y的差異（X-Y )來算出。此時，前述厚度X、Y爲沒有 形成透鏡形狀的區域之厚度。另外，本實施例中，利用電 漿發光光譜將蝕刻終點檢測出來，藉此來進行中間層32 的蝕刻，也會有中間層32結束蝕刻時，透鏡材料層31的 表面部若干受到触刻的情況，第7 ( a )圖則是表示透鏡材 •27- 200810099 (25) ♦ 料層31的表面受到飩刻的狀態。另外，依照蝕刻條件也 會有中間層3 2與透鏡材料層3 1的間隔D 1並不是零的情 況，此處則是讓該兩層持有特定間隔D1的狀態。將該 SEM照片上所呈現的形狀及前述間隔D1及餽刻深度，一 倂顯示在第8圖中。另外，有關蝕刻選擇比與間隔D1的 關係性則顯示在第9圖中。 φ 〔中間層3 2的蝕刻條件〕 在與實施例1 -1相同條件下進行。 〔透鏡材料層3 1的鈾刻條件〕 處理氣體 ：如下述 鈾刻選擇比 ：如下述The index of the etching amount of the SiN film 3 1 is the thickness X of the lens material layer 3 1 etched by the intermediate layer 32 shown in Fig. 7 ( a ), and the lens material layer shown in Fig. 7 (b) 31 is calculated by calculating the difference (XY) of the thickness Y of the lens material layer 31 after the engraving. At this time, the thicknesses X and Y are the thicknesses of the regions where the lens shape is not formed. In addition, in the present embodiment, the etching end point is detected by the plasma luminescence spectrum, whereby the etching of the intermediate layer 32 is performed, and when the intermediate layer 32 is finished etching, the surface portion of the lens material layer 31 is slightly etched. In the case, the 7th (a)th diagram indicates the lens material. 27- 200810099 (25) ♦ The surface of the layer 31 is etched. Further, depending on the etching conditions, there is also a case where the interval D 1 between the intermediate layer 32 and the lens material layer 31 is not zero, and here, the two layers are held at a specific interval D1. The shape presented on the SEM photograph, and the interval D1 and the depth of the feed, are shown in Fig. 8. Further, the relationship between the etching selection ratio and the interval D1 is shown in Fig. 9. φ [etching conditions of the intermediate layer 3 2] was carried out under the same conditions as in Example 1-1. [Uranium engraving conditions of the lens material layer 31] Processing gas: as shown below: uranium engraving selection ratio: as follows
高頻電源的電力 ：4 0 0 W 處理壓力 ：2.65Pa(20mTorr)High-frequency power supply: 4 0 0 W Processing pressure: 2.65Pa (20mTorr)
φ 載置台的設定溫度：〇 °C 處理時間 ：直到透鏡材料層3 1飩刻7 5 0 nm 爲止進行，停止蝕刻 蝕刻選擇比係藉由改變處理氣體的流量比來進行控制 。飩刻選擇比與處理氣體的流量比的關係如以下所述。 選擇比 0.95: SF6/CHF3/02 二 60/50/2 5 seem 選擇比 1.42: SF6/CHF3 = 30/60 seem 選擇比 1 .59 : SF6/CHF3 = 2 8/60 seem 選擇比 1.66: SF6/CHF3 = 29/60 seem -28- 200810099 (26) 選擇比 1·75: SF6/CHF3 = 25/60 seem 被認定依據第8圖及第9圖來調整飩刻選擇 形狀會變化，可以控制間隔D1。利用該結果， 比爲0.95時，間隔D1變成大於初期間隔dl，但 著蝕刻選擇比的增加，前述間隔ΕΠ會變小、一 選擇比爲1.66以上時，會發生透鏡材料層31的 達不到目標値的75 0 nm左右，且鈾刻不進展的 此，蝕刻選擇比過度變大則蝕刻不進展，被推認；! 由基的飩刻也進展，且這以上則C自由基等的堆 展，所以堆積量相對於蝕刻量的比率過度變大， 停止之故。 藉由此方式，倂用第9圖的數據，理解：爲 一面確保一定程度的蝕刻量，一面具有比初期間 要更窄的間隔D1之微透鏡3，最好是在鈾刻選 1.0以上且1.6以下的條件下，進行中間層32及 的蝕刻、尤其蝕刻選擇比爲1.4以上且1.6以下 話，間隔D1變成小於150 nm，可以將微透鏡 D 1形成爲與中間層32相同程度或更窄，則更理充 <實施例1 -3 :有關蝕刻選擇比與蝕刻速度的面 的關係> 針對與實施例1-1同樣的晶圓W，在0.8 6〜: 圍改變蝕刻選擇比，進行透鏡材料層31的飩刻 鏡材料層31的飩刻速度、及飩刻速度的面內均 比，透鏡 鈾刻選擇 確認：隨 方面蝕刻 蝕刻深度 現象。如 藝因F自 積就會進 發生飩刻 了要形成 隔d 1還 擇比成爲 微透鏡3 的範圍的 3的間隔 內均等性 ;.2 5的範 ，針對透 等性進行 -29 - 200810099 (27) 一 測定。前述飩刻速度爲表示經由前述晶圓面內的2 5部位 所測定出來之蝕刻速度的平均値，蝕刻速度的面內均等性 爲表示經由前述晶圓面內的25部位所測定出來之飩刻速 度的偏差除以蝕刻速度的絕對値之値，且表示該値越接近 零則蝕刻速度的面內均等性越高。此外，中間層3 2及透 鏡材料層3 1的蝕刻條件則如以下所述。 φ 〔中間層32的飩刻條件〕 在與實施例1-1相同條件下進行。Setting temperature of φ stage: 〇 °C Processing time: Until the lens material layer 3 1 engraved 7 5 0 nm, the etching is stopped. The etching selection ratio is controlled by changing the flow rate ratio of the processing gas. The relationship between the engraving selection ratio and the flow ratio of the processing gas is as follows. Select ratio 0.95: SF6/CHF3/02 II 60/50/2 5 seem Select ratio 1.42: SF6/CHF3 = 30/60 seem Select ratio 1.59: SF6/CHF3 = 2 8/60 seem Select ratio 1.66: SF6/ CHF3 = 29/60 seem -28- 200810099 (26) Selection ratio 1·75: SF6/CHF3 = 25/60 seem It is determined that the shape of the engraving selection will change according to Fig. 8 and Fig. 9 and the interval D1 can be controlled. . With this result, when the ratio is 0.95, the interval D1 becomes larger than the initial interval dl. However, when the etching selectivity is increased, the interval ΕΠ becomes small, and when the selection ratio is 1.66 or more, the lens material layer 31 does not reach the state. The target 値 is about 75 nm, and the uranium is not progressing. If the etching selectivity is too large, the etching does not progress, and it is reckoned. The engraving of the base is also progressing, and the above is the stacking of C radicals. Therefore, the ratio of the amount of deposition to the amount of etching is excessively large and stops. In this way, using the data of Fig. 9, it is understood that the microlens 3 having a narrower interval D1 than the initial period is ensured to ensure a certain degree of etching amount on one side, and it is preferable to select 1.0 or more in uranium. Under the condition of 1.6 or less, the etching of the intermediate layer 32 and, in particular, the etching selectivity ratio is 1.4 or more and 1.6 or less, and the interval D1 becomes less than 150 nm, and the microlens D 1 can be formed to be the same degree or narrower as the intermediate layer 32. Further, the above embodiment 1 - 3: the relationship between the etching selectivity and the surface of the etching rate > For the same wafer W as in the embodiment 1-1, the etching selection ratio is changed at 0.8 6 to: The engraving speed of the engraved mirror material layer 31 of the lens material layer 31 and the in-plane ratio of the engraving speed are performed, and the lens uranium engraving is selected to etch the etching depth phenomenon. If the factor F is self-productive, it will be engraved to form the interval d 1 and the ratio of the ratio of the microlens 3 to the interval of 3; the range of 2, 5 for the transparency -29 - 200810099 (27) One measurement. The etch rate is an average 値 of the etch rate measured through the 25 locations in the wafer surface, and the in-plane uniformity of the etch rate is measured by the 25 portions measured in the wafer surface. The deviation of the velocity is divided by the absolute 蚀刻 of the etch rate, and indicates that the closer the 値 is to zero, the higher the in-plane uniformity of the etch rate. Further, the etching conditions of the intermediate layer 32 and the lens material layer 31 are as follows. φ [Engraving conditions of the intermediate layer 32] The same conditions as in Example 1-1 were carried out.
Vs.· 〔透鏡材料層3 1的鈾刻條件〕 處理氣體 ：如下述 触刻選擇比 ：如下述Vs.· [Urban engraving conditions of the lens material layer 31] Processing gas: as shown below: Selection ratio: as follows
高頻電源的電力 ：400 W 處理壓力 ：2.65Pa(20mTorr) • 載置台的設定溫度：〇°c 處理時間 ：直到透鏡材料層31触刻750 nm 爲止進行，停止餓刻 蝕刻選擇比係藉由改變處理氣體的流量比來進行控制 。蝕刻選擇比與處理氣體的流量比的關係如以下所述。 選擇比 0.86 : SF6/CHF3/〇2= 60/25/30 seem 選擇比 〇·95 : SF6/CHF3/02 = 60/50/25 seem 選擇比 1 ·42 : SF6/CHF3 二 30/60 seem 選擇比 1·59: SF6/CHF3 = 28/60 seem -30- 200810099 * (28) . 選擇比 1.66: SF6/CHF3 = 29/60 seem 選擇比 1.75 : SF6/CHF3 二 25/60 seem 選擇比 2.17: SF6/CHF3 = 20/60 seem 選擇比 3.25 : SF6/CHF3= 15/60 seem 處理氣體的流量比與蝕刻選擇比的關係、飩刻速度、 蝕刻速度的面內均等性一倂顯示在第1 0圖中。經由該結 果，認定蝕刻選擇比變成1.75以上，蝕刻速度的面內均 φ 等性就會急遽惡化，經由在飩刻選擇比成爲1 · 〇〜1 ·6的條 件下進行中間層3 2及微透鏡3的蝕刻，確認可以確保透 鏡形狀的較高面內均等性。 <實施例2_ 1 :利用調整蝕刻選擇比進行透鏡形狀的控制 > 針對在膜厚4.2μπι之透鏡材料層31的上面’依序形 成有由酚系抗蝕膜所形成之中間層32、及被形成爲特定的 φ 透鏡形狀之由酚系抗飩膜所形成的遮罩層33之6英吋的 晶圓W，在1.6 3〜2.06的範圍改變鈾刻選擇比’進行透鏡 材料層3 1的飩刻，至於遮罩膜3 3、中間層32、微透鏡3 ，則針對平面形狀及剖面形狀進行SEM照片的照像’觀 察透鏡形狀的變化，並且根據SEM形狀，測定各別的間 隔D1 ( dl )。將該SEM照片上的形狀及間隔D1 —倂顯 示在第1 1圖中。另外，有關飩刻選擇比與間隔D1的關係 性則顯示在第1 2圖中。 200810099 • (29) 〔中間層3 2的鈾刻條件〕 處理氣體 ：CF4/C4F8 = 1 00/3 0 seemPower of high-frequency power supply: 400 W Processing pressure: 2.65Pa (20mTorr) • Setting temperature of the mounting table: 〇°c Processing time: Until the lens material layer 31 is inscribed at 750 nm, stopping the etch-etching selection ratio is performed by The flow rate ratio of the process gas is changed to control. The relationship between the etching selection ratio and the flow rate ratio of the processing gas is as follows. Select ratio 0.86: SF6/CHF3/〇2= 60/25/30 seem Select ratio 95: SF6/CHF3/02 = 60/50/25 seem Select ratio 1 · 42 : SF6/CHF3 2 30/60 seem Ratio 1.59: SF6/CHF3 = 28/60 seem -30- 200810099 * (28) . Select ratio 1.66: SF6/CHF3 = 29/60 seem Select ratio 1.75: SF6/CHF3 2 25/60 seem Select ratio 2.17: SF6/CHF3 = 20/60 seem Select ratio 3.25: SF6/CHF3= 15/60 seem The relationship between the flow ratio of the treatment gas and the etching selectivity ratio, the engraving speed, and the in-plane uniformity of the etching rate are shown in the first 0 In the picture. By the result, it is confirmed that the etching selectivity ratio becomes 1.75 or more, and the in-plane φ and the like of the etching rate are rapidly deteriorated, and the intermediate layer 3 2 and the micro are performed under the condition that the etching selection ratio is 1 · 〇 〜1·6. The etching of the lens 3 confirms that high in-plane uniformity of the lens shape can be ensured. <Example 2_1: Control of lens shape by adjusting etching selection ratio> An intermediate layer 32 formed of a phenol-based resist film is sequentially formed on the upper surface of the lens material layer 31 having a film thickness of 4.2 μm, And a 6-inch wafer W of the mask layer 33 formed of a phenol-based anti-caries film formed into a specific φ lens shape, changing the uranium engraving selection ratio in the range of 1.6 3 to 2.06 to perform the lens material layer 3 In the case of the mask film 33, the intermediate layer 32, and the microlens 3, the SEM photograph is taken for the planar shape and the cross-sectional shape to observe the change in the lens shape, and the respective intervals are measured according to the SEM shape. D1 ( dl ). The shape and interval D1 - 上 on the SEM photograph are shown in Fig. 11. Further, the relationship between the engraving selection ratio and the interval D1 is shown in Fig. 12. 200810099 • (29) [Urban engraving conditions for intermediate layer 3 2] Process gas : CF4/C4F8 = 1 00/3 0 seem
高頻電源的電力 ：1200 W 處理壓力 ：5.3Pa(40mTorr)High-frequency power supply: 1200 W Processing pressure: 5.3 Pa (40 mTorr)
載置台的設定溫度· 〇 C 處理時間 ：利用EPD，進行13 9秒的餓刻 ，蝕刻時的終點則是根據C0自由 基的發光光譜強度（波長226 nm )與CF自由基的發光光譜強度（ 波長260 nm)的比率之運算結果 來進行檢測，停止鈾刻 〔透鏡材料層3 1的鈾刻條件〕 處理氣體 蝕刻選擇比 高頻電源的電力 處理壓力Setting temperature of the mounting table · 〇C Processing time: Using EPD for 13 9 seconds of hunger, the end point of etching is based on the luminescence intensity of C0 radical (wavelength 226 nm) and the luminescence intensity of CF radical ( The result of the calculation of the ratio of the wavelength of 260 nm) is stopped to stop the uranium engraving [the uranium engraving condition of the lens material layer 31]. The treatment gas etching selects the power treatment pressure of the high-frequency power source.
:如下述 :如下述 ：400 W ：2.65 Pa ( 20 mTorr): as follows: as follows: 400 W : 2.65 Pa ( 20 mTorr)
載置台的設定溫度：〇°C 處理時間 ：直到透鏡材料層31蝕刻2·8 μπι 爲止進行，停止蝕刻 鈾刻選擇比係藉由改變處理氣體的流量比來進行控制 。蝕刻選擇比與處理氣體的流量比的關係如以下所述。 選擇比 1.63 : SF6/CHF3= 12/60 seem 選擇比 1·80 : SF6/CHF3= 10/60 seem -32- 200810099 ^ (30) 選擇比 2.06: SF6/CHF3 = 8/6 0 seem 被認定依據第11圖及第12圖來調整蝕刻選擇比 鏡形狀會變化，可以控制間隔D1。利用該結果，被 :蝕刻選擇比爲1.8以上的話，間隔D1變成5 00 nm ，蝕刻選擇比爲1 . 8以上的話，則與初期間隔d 1大 同程度，隨著飩刻選擇比的增加，前述間隔D1會變 與透鏡材料層31爲SiN膜的情況不相同，即使蝕刻 比增加仍可以確保鈾刻量。如此，透鏡材料層31爲 膜的情況，被推爲即使飩刻選擇比變大，堆積量相對 刻量的比率仍不會過度變高，不會發生蝕刻停止。 因此，從第12圖的近似曲線，被認定：爲了要 具有與初期間隔dl相同程度或更窄的間隔D1之微透 ，最好是在飩刻選擇比成爲1 . 8以上的條件下，進行 層3 2及微透鏡3的鈾刻，還預測：鈾刻選擇比變成 以上，就可以將間隔D1變成零。 <實施例2-2 :有關蝕刻選擇比與蝕刻速度的面內均 的關係> 針對與實施例2-1同樣的晶圓W，在1.63〜2.06 圍改變蝕刻選擇比，進行透鏡材料層3 1的飩刻’針 鏡材料層31的飩刻速度、及鈾刻速度的面內均等性 測定。前述飩刻速度及鈾刻速度的面內均等性’係以 晶圓面內的9個部位測定前述蝕刻速度’利用與實 1-3同樣的手法來算出。此外，中間層32及透鏡材 ，透 認定 以下 致相 小、 選擇 Si02 於蝕 形成 鏡3 中間 2.2 等性 的範 對透 進行 前述 施例 料層 -33- 200810099 燦 (31) 3 1的蝕刻條件如以下所述。 〔中間層3 2的飩刻條件〕 在與實施例1 -1相同的條件下進行Setting temperature of the mounting table: 〇 ° C Processing time : Until the lens material layer 31 is etched by 2·8 μπι, the etching is stopped. The uranium engraving selection ratio is controlled by changing the flow ratio of the processing gas. The relationship between the etching selection ratio and the flow rate ratio of the processing gas is as follows. Select ratio 1.63: SF6/CHF3= 12/60 seem Select ratio 1·80: SF6/CHF3= 10/60 seem -32- 200810099 ^ (30) Selection ratio 2.06: SF6/CHF3 = 8/6 0 seem In Fig. 11 and Fig. 12, the adjustment of the etching selection is changed from the shape of the mirror, and the interval D1 can be controlled. When the etching selectivity ratio is 1.8 or more, the interval D1 becomes 500 nm, and the etching selectivity ratio is 1.8 or more, which is about the same as the initial interval d1, and the etching ratio is increased as described above. The interval D1 may be different from the case where the lens material layer 31 is a SiN film, and the uranium engraving amount can be ensured even if the etching ratio is increased. As described above, in the case where the lens material layer 31 is a film, it is pushed so that the ratio of the deposition amount to the amount of engraving does not become excessively high even if the engraving selection ratio becomes large, and the etching stop does not occur. Therefore, from the approximate curve of Fig. 12, it is determined that in order to have a micro-transparence of the same degree or narrower interval D1 as the initial interval d1, it is preferable to carry out the condition that the engraving selection ratio is 1.8 or more. The uranium engraving of layer 3 2 and microlens 3 also predicts that the uranium engraving selectivity ratio becomes above, and the interval D1 can be made zero. <Example 2-2: Relationship between the etching selectivity and the in-plane of the etching rate> For the wafer W similar to Example 2-1, the etching selectivity was changed from 1.63 to 2.06, and the lens material layer was formed. The in-plane uniformity of the engraving speed of the needle mirror material layer 31 and the uranium engraving speed of the engraving of 3 1 was measured. The in-plane uniformity of the etching speed and the uranium engraving rate is measured by measuring the etching rate at nine locations in the wafer surface by the same method as in the real 1-3. In addition, the intermediate layer 32 and the lens material are etched under the above-mentioned embodiment layer-33-200810099 Can (31) 3 1 by considering that the following phase is small and the SiO 2 is selected in the middle of the etched mirror 3 . As described below. [Engraving conditions of the intermediate layer 3 2] Under the same conditions as in Example 1-1
〔透鏡材料層3 1的蝕刻條件〕 處理氣體 ：如下述 鈾刻選擇比 ：如下述 高頻電源的電力 ：400 W[Etching Conditions of Lens Material Layer 31] Process Gas: The following uranium engraving selection ratio: as follows: High-frequency power supply: 400 W
處理壓力 ：2·65 Pa ( 20 mT〇rr ) 載置台的設定溫度：〇°C 處理時間 ：直到透鏡材料層3 1飩刻2 · 8 爲止進行，停止蝕刻 蝕刻選擇比係藉由改變處理氣體的流量比來進行若 。蝕刻選擇比與處理氣體的流量比的關係與實施例2-1 同。 μιη 制 相 處理氣體的流量比與飩刻選擇比的關係、蝕刻速 蝕刻速度的面內均等性一倂顯示在第1 3圖中。經由 果，被確認：蝕刻選擇比爲1.63〜2.06的範圍，則飩 度的面內均等性良好。 結 速 <實施例2-3 ··有關間隔D1與高頻電力的關係> 針對實施例2-1的晶圓W，將蝕刻選擇比固定在 ，改變高頻電力的供應量來進行蝕刻，針對所獲得的 1.6 透 -34- 200810099 、 (32) 、 鏡3測定間隔D 1，再測定該間隔D 1的高頻電力依存性、 及透鏡材料層3 1的飩刻速度和鈾刻速度的面內均等性。 關於前述触刻速度及蝕刻速度的面內均等性則是利用與實 施例2-2同樣的手法來進行測定。此外，蝕刻條件如以下 所述。 〔中間層3 2的触刻條件〕Processing pressure: 2·65 Pa ( 20 mT〇rr ) Setting temperature of the mounting table: 〇 °C Processing time: until the lens material layer 3 1 engraved 2 · 8 is performed, stopping the etching etching selection ratio by changing the processing gas The flow ratio is compared to if. The relationship between the etching selection ratio and the flow rate ratio of the processing gas was the same as in Example 2-1. The relationship between the flow rate ratio of the phase treatment gas and the etching selectivity ratio, and the in-plane uniformity of the etching rate of the etching rate are shown in Fig. 13. As a result, it was confirmed that the etching selectivity ratio was in the range of 1.63 to 2.06, and the in-plane uniformity of the enthalpy was good. Junction speed <Example 2-3 · Relationship between interval D1 and high-frequency power> For the wafer W of Example 2-1, the etching selectivity was fixed, and the supply amount of the high-frequency power was changed to perform etching. For the obtained 1.6-34-200810099, (32), and mirror 3 measurement interval D 1, the high-frequency power dependence of the interval D 1 and the engraving speed and uranium engraving speed of the lens material layer 31 are measured. In-plane equalization. The in-plane uniformity of the above-mentioned etch rate and etching rate was measured by the same method as in Example 2-2. Further, the etching conditions are as follows. [Tactile conditions of the intermediate layer 3 2 ]
在與實施例1 -1相同條件下進行。 材料層3 1的鈾刻條件〕 處理氣體 · 蝕刻選擇比 ： 高頻電源的電力 ： 處理壓力 ： 載置台的設定溫度： φ 處理時間 SF6/CHF3= 12/60 seem 1.6 400 W 、 800 W 2.65 Pa ( 20 mTorr)This was carried out under the same conditions as in Example 1-1. Uranium engraving condition of material layer 3 1 Processing gas · Etching selection ratio: Power of high-frequency power supply: Processing pressure: Setting temperature of mounting table: φ Processing time SF6/CHF3 = 12/60 seem 1.6 400 W, 800 W 2.65 Pa ( 20 mTorr)
0°C :直到透鏡材料層31蝕刻2.8 μπι 爲止進行，停止蝕刻 將該結果顯示在第1 4圖中。第1 4圖中，縱軸爲間隔 D 1，橫軸爲高頻電力的供應量。另外，電力供應量爲400 W時的蝕刻速度爲1 86.4 nm/min ’蝕刻速度的面內均等性 爲土4.5%，電力供應量爲800 W時的蝕刻速度爲3 3 9·6 nm/min，蝕刻速度的面內均等性爲±3.9%。因此，被認定 :令高頻電力的供應量變化’藉此可以調整透鏡形狀也可 以調整間隔D1、可以調整蝕刻速度和刻速度的面內均等 -35 - 200810099 • (33) . 性、飩刻選擇比爲1 · 6的情況，間隔D 1則是電力供應量 爲8 00 W時比電力供應量爲400 W時還要更窄，也提高前 述刻速度的面內均等性。 <實施例2-4 :有關間隔D1與處理壓力的關係> 針對實施例2-1的晶圓W，將触刻選擇比固定在1.6 ，改變處理壓力的値來進行蝕刻，針對所獲得的微透鏡3 φ 測定間隔D 1，再測定該間隔D 1的處理壓力依存性、及透 鏡材料層31的蝕刻速度和蝕刻速度的面內均等性。關於 前述蝕刻速度及蝕刻速度的面內均等性則是利用與實施例 2-2同樣的手法來進行測定。此外，.触刻條件如以下所述 〔中間層3 2的蝕刻條件〕 在與實施例1 -1相同條件下進行。0 ° C : Until the lens material layer 31 is etched by 2.8 μm, the etching is stopped. The result is shown in Fig. 14. In Fig. 14, the vertical axis represents the interval D1, and the horizontal axis represents the supply of high-frequency power. In addition, the etching rate at the power supply of 400 W is 1 86.4 nm/min. The in-plane uniformity of the etching rate is 4.5% for the soil, and the etching rate for the power supply of 800 W is 3 3 9·6 nm/min. The in-plane uniformity of the etching rate was ±3.9%. Therefore, it is determined that the supply amount of the high-frequency power is changed 'by this, the lens shape can be adjusted, the interval D1 can be adjusted, and the in-plane equalization of the etching speed and the engraving speed can be adjusted. -35 - 200810099 • (33) . Sex, engraving In the case where the selection ratio is 1.6, the interval D 1 is even narrower when the power supply amount is 800 W than when the power supply amount is 400 W, and the in-plane uniformity of the aforementioned engraving speed is also improved. <Example 2-4: Relationship between the interval D1 and the treatment pressure> For the wafer W of Example 2-1, the etch selectivity was fixed at 1.6, and the treatment pressure was changed to perform etching. The microlens 3 φ is measured for the interval D1, and the processing pressure dependency of the interval D 1 and the in-plane uniformity of the etching rate of the lens material layer 31 and the etching rate are measured. The in-plane uniformity of the etching rate and the etching rate was measured by the same method as in Example 2-2. Further, the etch conditions were as follows (etching conditions of the intermediate layer 32) Under the same conditions as in Example 1-1.
〔透鏡材料層3 1的餓刻條件〕 處理氣體 ：SF6/CHF3 = 1〇 sccm/60 seem 蝕刻選擇比 ：1 · 6[Hungry conditions of the lens material layer 31] Processing gas: SF6/CHF3 = 1〇 sccm/60 seem Etching selection ratio: 1 · 6
高頻電源的電力 ：800 W 處理壓力 ：1 · 94 Pa ( 1 5 mTorr ) 、2 · 65 Pa (20 mTorr)High-frequency power supply: 800 W Processing pressure: 1 · 94 Pa (1 5 mTorr ), 2 · 65 Pa (20 mTorr)
載置台的設定溫度：0°C 處理時間 ：直到透鏡材料層31飩刻2.8 μηι -36- 200810099 (34) 爲止進行，停止鈾刻 將該結果顯示在第1 5圖中。第1 5圖中，縱軸爲間隔 D1，橫軸爲處理壓力。另外，處理壓力爲1.94 Pa時的飩 刻速度爲339.6 nm/min，刻速度的面內均等性爲±3.9%， 處理壓力爲2.65 Pa時的鈾刻速度爲323.0 nm/min，刻速 度的面內均等性爲土4.3%。因此，被認定：令處理壓力變 化，藉此可以調整透鏡形狀而可以調整間隔D1的大小、 可以調整蝕刻速度和刻速度的面內均等性、蝕刻選擇比爲 1.6的情況，處理壓力爲1.94 Pa時間隔D1變窄，也提高 前述刻速度的面內均等性。 如此，透鏡形狀或前述面內均等性，依賴高頻電力的 供應量或處理壓力，係如前述，隨著高頻電力的供應量或 處理壓力的增加，F自由基的量增加，結果推認爲因有助 於触刻之F的量與有助於堆積之C等的量之比例變化，這 點反映到透鏡形狀或前述刻速度的面內均等性之故。另外 ，透鏡材料層3 1爲SiN膜的情況，有關間隔D 1與高頻電 力的供應量或處理壓力的關係則未進行實驗，不過預測： 會獲得與透鏡材料層3 1爲Si02膜的情況同樣的結果。 以上，本發明的鈾刻處理只是以上述的電漿處理裝置 來實施，也能夠以藉由其他的方式來令電漿產生的裝置來 實施。進而，本發明不只能夠用於形成CCD固體攝像元 件，還能夠用於形成MOS型固體攝像元件或液晶顯示元 件所應用的微透鏡。進而，本發明的方法不只用於形成最 表面的微透鏡，也有效用於形成層內透鏡；除了使用半導 -37- 200810099 (35) ， 體晶圓之外，也可以使用玻璃基板來作爲形成本發明的微 透鏡的基板。 【圖式簡單說明】 第1圖爲表示具備有本發明的微透鏡之CCD固體攝 像元件的一個例子之剖面圖。 第2圖爲表示前述微透鏡的形成方法之過程圖。 φ 第3圖爲表示前述微透鏡的形成方法之過程圖。 第4圖爲表示用來實施形成前述微透鏡的蝕刻過程之 磁控管RIE電漿蝕刻裝置的一個例子之剖面圖。 第5圖爲表示具備有本發明的微透鏡之CCD固體攝 像元件的其他例子之剖面圖。 第6圖爲表示呈現實施例1 -1的結果之微透鏡的平面 形狀及間隔D1之特性圖。 第7圖爲用來說明鈾刻深度之剖面圖。 • 第8圖爲表示呈現實施例1-2的結果之微透鏡的平面 形狀及剖面形狀與間隔D1與飩刻深度之特性圖。 第9圖爲表示呈現實施例1-2的結果之間隔D1與鈾 刻選擇比的關係之特性圖。 第10圖爲表示呈現實施例1-3的結果之蝕刻選擇比 與鈾刻速度與刻速度的面內均等性之特性圖。 第11圖爲表示呈現實施例2-1的結果之微透鏡的平 面形狀及剖面形狀與間隔D1之特性圖。 第12圖爲表示呈現實施例2-1的結果之間隔D1與飩 -38- 200810099 - (36) 刻選擇比的關係之特性圖。 第1 3圖爲表示呈現實施例2-2的結果之蝕刻選擇比 與蝕刻速度與刻速度的面內均等性之特性圖。 第14圖爲表示呈現實施例2-3的結果之間隔D 1與高 頻電力的供應量的關係之特性圖。 第15圖爲表示呈現實施例2-4的結果之間隔D1與處 理壓力的關係之特性圖。 第16圖爲表示習知的微透鏡的形成方法之平面圖。 第1 7圖爲表示習知的微透鏡的形成方法之剖面圖。 【主要元件符號說明】 21 :感光部 22 :垂直暫存器 23 :導電膜 24 :遮光膜 25 :平坦化膜 2 6 :濾色層 3 :微透鏡 、 3 1 :透鏡材料層 3 2 :中間層 3 3 :遮罩膜 4 :處理室 41 :載置台 42 :靜電夾盤 -39- 200810099 (37) 5 :氣體供應室 5 0 :流量調整手段 52A : CF4氣體源 52B : C4F8氣體源 52C : SF6氣體源 52D : CHF3氣體源 54 :真空排氣手段 54A :壓力調整手段 6 1 :雙極環形磁體 6 3 :高頻電源部Setting temperature of the mounting table: 0 ° C Processing time: Until the lens material layer 31 is engraved 2.8 μηι -36 - 200810099 (34), the uranium engraving is stopped. The result is shown in Fig. 15. In Fig. 15, the vertical axis represents the interval D1, and the horizontal axis represents the processing pressure. In addition, the engraving speed was 339.6 nm/min at a treatment pressure of 1.94 Pa, the in-plane uniformity of the engraving speed was ±3.9%, and the uranium engraving speed at a treatment pressure of 2.65 Pa was 323.0 nm/min. The internal consistency is 4.3% for soil. Therefore, it is determined that the processing pressure is changed, whereby the lens shape can be adjusted, the size of the interval D1 can be adjusted, the in-plane uniformity of the etching rate and the engraving speed can be adjusted, and the etching selectivity can be adjusted to 1.6, and the processing pressure is 1.94 Pa. The time interval D1 is narrowed, and the in-plane uniformity of the aforementioned engraving speed is also improved. Thus, the lens shape or the in-plane uniformity depends on the supply amount of high-frequency power or the processing pressure. As described above, as the supply amount of high-frequency power or the processing pressure increases, the amount of F radicals increases, and as a result, it is estimated that This is reflected in the in-plane uniformity of the lens shape or the aforementioned engraving speed due to the change in the ratio of the amount of F which contributes to the engraving and the amount of C which contributes to the accumulation. Further, in the case where the lens material layer 31 is a SiN film, the relationship between the interval D1 and the supply amount of the high-frequency power or the processing pressure is not experimentally performed, but it is predicted that the lens material layer 31 is obtained as the SiO2 film. The same result. As described above, the uranium engraving treatment of the present invention can be carried out only by the above-described plasma processing apparatus, and can also be carried out by means of other means for generating plasma. Further, the present invention can be used not only for forming a CCD solid-state imaging element but also for forming a MOS type solid-state imaging element or a microlens to which a liquid crystal display element is applied. Furthermore, the method of the present invention is not only used to form the outermost surface microlens, but is also effective for forming an in-layer lens; in addition to the use of a semiconductor wafer, the glass substrate can be used as a semiconductor wafer. A substrate forming the microlens of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an example of a CCD solid-state image sensor including a microlens of the present invention. Fig. 2 is a process diagram showing a method of forming the aforementioned microlens. φ Fig. 3 is a process diagram showing a method of forming the aforementioned microlens. Fig. 4 is a cross-sectional view showing an example of a magnetron RIE plasma etching apparatus for performing an etching process for forming the aforementioned microlenses. Fig. 5 is a cross-sectional view showing another example of a CCD solid-state image sensor including the microlens of the present invention. Fig. 6 is a characteristic diagram showing the planar shape and the interval D1 of the microlens showing the results of Example 1-1. Figure 7 is a cross-sectional view showing the depth of uranium engraving. Fig. 8 is a characteristic diagram showing the planar shape and cross-sectional shape of the microlens showing the results of Example 1-2, and the interval D1 and the engraving depth. Fig. 9 is a characteristic diagram showing the relationship between the interval D1 and the uranium enth selection ratio which show the results of Example 1-2. Fig. 10 is a characteristic diagram showing the in-plane uniformity of the etching selection ratio and the uranium engraving speed and the engraving speed of the results of the examples 1-3. Fig. 11 is a characteristic diagram showing the planar shape, the cross-sectional shape and the interval D1 of the microlens showing the results of Example 2-1. Fig. 12 is a characteristic diagram showing the relationship between the interval D1 and the 选择 -38 - 200810099 - (36) selection ratio of the results of the embodiment 2-1. Fig. 1 is a characteristic diagram showing the in-plane uniformity of the etching selectivity and the etching rate and the engraving speed of the results of the embodiment 2-2. Fig. 14 is a characteristic diagram showing the relationship between the interval D 1 of the result of the embodiment 2-3 and the supply amount of high-frequency power. Fig. 15 is a characteristic diagram showing the relationship between the interval D1 showing the result of Example 2-4 and the processing pressure. Fig. 16 is a plan view showing a conventional method of forming a microlens. Fig. 17 is a cross-sectional view showing a conventional method of forming a microlens. [Description of main component symbols] 21: Photosensitive portion 22: Vertical register 23: Conductive film 24: Light-shielding film 25: Flattening film 2 6: Color filter layer 3: Microlens, 3 1 : Lens material layer 3 2 : Middle Layer 3 3 : Mask film 4 : Process chamber 41 : Mounting table 42 : Electrostatic chuck - 39 - 200810099 (37) 5 : Gas supply chamber 5 0 : Flow rate adjusting means 52A : CF4 gas source 52B : C4F8 gas source 52C : SF6 gas source 52D: CHF3 gas source 54: vacuum exhaust means 54A: pressure adjusting means 6 1 : bipolar ring magnet 6 3 : high frequency power supply unit
-40-40
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006178502A JP4826362B2 (en) | 2006-06-28 | 2006-06-28 | Method for forming a microlens |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200810099A true TW200810099A (en) | 2008-02-16 |
| TWI466272B TWI466272B (en) | 2014-12-21 |
Family
ID=39011546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096123363A TWI466272B (en) | 2006-06-28 | 2007-06-27 | A microlens forming method and a semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4826362B2 (en) |
| KR (2) | KR20080002638A (en) |
| CN (1) | CN101097846A (en) |
| TW (1) | TWI466272B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI627446B (en) * | 2012-05-30 | 2018-06-21 | 美商瑪森科技公司 | Method for forming microlenses |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008159748A (en) * | 2006-12-22 | 2008-07-10 | Toppan Printing Co Ltd | Method for manufacturing solid-state image sensing device and solid-state image sensing device |
| CN101949518A (en) * | 2010-09-29 | 2011-01-19 | 上海铭源光源发展有限公司 | Manufacturing method for fly lens structure |
| JP5372102B2 (en) | 2011-02-09 | 2013-12-18 | キヤノン株式会社 | Photoelectric conversion device and imaging system |
| JP2013077740A (en) | 2011-09-30 | 2013-04-25 | Sony Corp | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus |
| TW201921662A (en) | 2012-05-30 | 2019-06-01 | 日商新力股份有限公司 | Image pickup element, image pickup device, and manufacturing device and method |
| JP6099345B2 (en) * | 2012-09-27 | 2017-03-22 | シャープ株式会社 | LENS AND ITS MANUFACTURING METHOD, SOLID-STATE IMAGING DEVICE, ELECTRONIC INFORMATION DEVICE |
| US20140183334A1 (en) * | 2013-01-03 | 2014-07-03 | Visera Technologies Company Limited | Image sensor for light field device and manufacturing method thereof |
| JP2015065268A (en) | 2013-09-25 | 2015-04-09 | ソニー株式会社 | Lens array and manufacturing method thereof, solid state image sensor and electronic apparatus |
| US10665627B2 (en) | 2017-11-15 | 2020-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens |
| JPWO2020122032A1 (en) * | 2018-12-13 | 2021-10-28 | 凸版印刷株式会社 | Manufacturing method of solid-state image sensor and solid-state image sensor |
| CN110107841B (en) * | 2019-03-13 | 2023-11-10 | 赣州市众恒光电科技有限公司 | Protection industrial and mining lamp with changeable light emitting angle |
| US11808959B2 (en) | 2020-08-11 | 2023-11-07 | Himax Technologies Limited | Optical element and wafer level optical module |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002110952A (en) * | 2000-10-02 | 2002-04-12 | Sony Corp | Method for forming on-chip microlens and method for manufacturing solid-state imaging element |
| JP4450597B2 (en) * | 2003-09-24 | 2010-04-14 | 東京エレクトロン株式会社 | Method for forming a microlens |
| JP4830306B2 (en) * | 2004-06-23 | 2011-12-07 | 凸版印刷株式会社 | Manufacturing method of solid-state imaging device |
-
2006
- 2006-06-28 JP JP2006178502A patent/JP4826362B2/en active Active
-
2007
- 2007-06-27 KR KR1020070063369A patent/KR20080002638A/en active Search and Examination
- 2007-06-27 TW TW096123363A patent/TWI466272B/en active
- 2007-06-28 CN CNA2007101268281A patent/CN101097846A/en active Pending
-
2008
- 2008-12-22 KR KR1020080131214A patent/KR20090014134A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI627446B (en) * | 2012-05-30 | 2018-06-21 | 美商瑪森科技公司 | Method for forming microlenses |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090014134A (en) | 2009-02-06 |
| KR20080002638A (en) | 2008-01-04 |
| TWI466272B (en) | 2014-12-21 |
| JP4826362B2 (en) | 2011-11-30 |
| CN101097846A (en) | 2008-01-02 |
| JP2008009079A (en) | 2008-01-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200810099A (en) | Method for forming micro lenses and semiconductor device including the micro lenses | |
| US7875196B2 (en) | Method for forming micro lenses | |
| US7303690B2 (en) | Microlens forming method | |
| TWI299892B (en) | Hemi-spherical structure and method for fabricating the same, image device and method for fabricating microlens structure | |
| US7718345B2 (en) | Composite photoresist structure | |
| JP2005175422A (en) | Method of forming inorganic microlens of image sensor | |
| JP5045057B2 (en) | Plasma processing method | |
| JP2018121051A (en) | Plasma processing device | |
| US7862732B2 (en) | Method for forming micro lenses and semiconductor device including the micro lenses | |
| JP2002246579A (en) | Solid-state image pickup element and manufacturing method thereof | |
| TWI301300B (en) | Semiconductor device with micro-lens and method of making the same | |
| JP2008166762A (en) | Method of manufacturing image sensor | |
| JP2015518288A (en) | Method for forming a microlens | |
| TWI286840B (en) | Method and system for etching a gate stack | |
| TW201246296A (en) | Pattern forming method | |
| TW200405463A (en) | Etching method | |
| KR20080101190A (en) | Method for manufacturing image sensor | |
| US6995915B2 (en) | Manufacturing method of micro-lens, manufacturing method of solid-state image pickup device and solid-state image pickup device | |
| US8058585B2 (en) | Plasma processing method, plasma processing apparatus and storage medium | |
| TW201248715A (en) | Method for plasma etching | |
| KR20080079494A (en) | Methode of forming amorphous carbon layer and methode of forming pattern of semiconductor device using amorphous carbon layer | |
| JP2002237582A (en) | Solid-state imaging element and its manufacturing method | |
| JP2010005573A (en) | Spin coating method, apparatus therefor, method of producing solid imaging element, and method of producing device |