JP2002246579A - Solid-state image pickup element and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a structure of an in-layer micro lens which improves insufficient sensitivity of a CMOS photosensor. SOLUTION: After a light shielding film is formed, a resist patterning is performed to form an opening part. The light shielding film is patterned by dry-etching, and an interlayer insulating film just below it is dry-etched up to just above a photoelectric conversion element to form a non-through hole. Then, the resist is removed, and the hole is filled with a material having a refractive index higher than the interlayer insulating film and flattened. A color filter layer is formed over it, thus a color filter layer is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state imaging device and a method for manufacturing the same.

[0002]

2. Description of the Related Art With the spread of digital cameras and portable information terminals in recent years, the demand for solid-state imaging devices is rapidly expanding. Along with this, there is an increasing demand for a solid-state imaging device with lower cost, higher resolution, and lower power consumption. In particular, as a low-power solid-state imaging device, a CMOS solid-state imaging device is described as “Introduction to CCD Camera Technology (Yuo Takemura, published by Corona)”.
As described on page 37, line 11 to page 40, line 20, the image sensor that amplifies and transfers electric charges using CMOS transistors is more expensive than the CCD image sensor that uses a conventional charge transfer device. Because it is superior to electricity,
This is a very popular method.

[0003] Further, since this element is composed of a CMOS transistor, it is prototyped at a conventional semiconductor factory.
Since it can be manufactured, there is little capital investment, and since it has sufficient design flexibility such that an image processing processor can be simultaneously formed inside the chip, it is a device that has been very actively developed in recent years.

[0004]

However, this C
In the case of an imaging device that transfers electric charges by using MOS transistors, as shown in FIG. 8, a multilayer wiring 103 exists in an interlayer insulating film 102 existing between a photoelectric conversion element 100 and a light-shielding film 101. Therefore, the distance between the photoelectric conversion element 100 and the light-shielding film 101 becomes large, and even if the light obliquely incident is collected by the microlens array 200 formed on the surface, it is collected outside the range of the photoelectric conversion element. Because
There is a possibility that the imaging device may be inefficient and have low sensitivity.

In addition, since light condensed outside the range of the photoelectric conversion element enters an adjacent photoelectric conversion element, there are many color moirés in which a different color is mixed in a portion that should be a single color, and the contrast is low. There is also a problem that only images can be obtained. As a conventional method for solving this problem, “Digital Camera Magazine” vol. There is a means in which a microlens called an intralayer lens is inserted between a color filter and a light-shielding film described on pages 96 to 98 in pages 15 and 2000, and two convex lenses collect light.

[0006] Even with this method, the light condensing power can be increased and the sensitivity can be expected to be improved. However, since the light incident at an extremely oblique angle cannot be completely guided to the corresponding photoelectric conversion element, the color moiré is improved. It cannot be completely removed.

The present invention has been made in view of the above-mentioned conventional disadvantages, and has as its object to condense light by a microlens 200 and to introduce all light introduced into a light shielding film 101 into a photoelectric conversion element. And a method of manufacturing the same.

[0008]

The solid-state imaging device of the present invention has a plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, and a switching element and a wiring are formed adjacent to the photoelectric conversion elements. A light-shielding film is formed on the switching element and the wiring, and in the solid-state imaging device, an interlayer insulating film is formed between the wiring and the light-shielding film. In the opening,
It is characterized by being filled with a transparent material having a refractive index higher than the refractive index of the interlayer insulating film. Further, the transparent material is silicon nitride, and the transparent material is a photocurable resin.

Further, a method of manufacturing a solid-state imaging device according to the present invention includes a plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, wherein a switching element and a wiring are formed adjacent to the photoelectric conversion elements. Wherein a light-shielding film is formed on the switching element and the wiring, and an interlayer insulating film is formed between the wiring and the light-shielding film. After film formation, resist patterning is performed to form an opening,
(b) patterning a light-shielding film, (c) forming a hole by performing dry etching on the interlayer insulating film up to immediately above a photoelectric conversion element, removing the resist, and (d) forming the interlayer insulating film in the hole. After filling with a transparent material having a refractive index higher than the refractive index, the interlayer insulating film is flattened.

[0010] Further, the transparent material is made of a photo-curable resin, and the flattening process is performed by laminating a glass substrate subjected to an inactivation process with the photo-effective resin, The photocurable resin is cured by irradiating the resin with light, and the glass substrate is peeled off.

Further, the present invention is characterized in that the bonding of the glass substrate and the photocurable resin is performed in a reduced pressure atmosphere.

Further, the solid-state imaging device of the present invention has a plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, and a switching element and a wiring are formed adjacent to the photoelectric conversion elements. In a solid-state imaging device in which a light-shielding film is formed on a switching element and the wiring, and an interlayer insulating film is formed between the wiring and the light-shielding film, the solid-state imaging element is formed on the light-shielding film. A silicon nitride film is formed on the side and bottom surfaces of the hole provided below the opening.

Further, the semiconductor device has a plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, and a switching element and a wiring are formed adjacent to the photoelectric conversion element, and the switching element and the wiring are formed on the switching element and the wiring. A method for manufacturing a solid-state imaging device in which a light-shielding film is formed, and an interlayer insulating film is formed between the wiring and the light-shielding film, wherein (a) forming an opening after forming the light-shielding film (B) pattern the light-shielding film by dry etching, and (c) dry-etch the interlayer insulating film under the opening to a position immediately above the photoelectric conversion element to form a hole. After that, the resist is removed, (d) a silicon nitride film is formed on the side walls and the bottom of the light shielding film and the hole, and (e) a transparent material having a lower refractive index than the silicon nitride film is applied and flattened. Conversion process Do, characterized by things.

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view for explaining the structure of a microlens array as a solid-state imaging device according to the present invention. An interlayer insulating film 102 exists between the light-shielding film 101 and the photoelectric conversion element 100.
A wiring 103 of an Al alloy is buried underneath. In practice, a silicon oxide film is often used for the interlayer insulating film 102. On the other hand, the photoelectric conversion element 100 is formed in the Si substrate 110 below the opening of the light shielding film 101. A non-penetrating hole 108 is formed in the interlayer insulating film 102 just above the photoelectric conversion element 100 and the opening of the light-shielding film 101, and the non-penetrating hole 108 has a higher refractive index than the interlayer insulating film 102. The transparent material 203 is filled. This portion becomes the in-layer microlens of the present invention, and the surface of the transparent material 203 is flattened.

Since the refractive index of the transparent material 203 needs to be sufficiently higher than that of the interlayer insulating film 102, a silicon nitride film or an acrylic or epoxy high refractive index resin is preferably used.

In particular, the silicon nitride film has a very high refractive index (nD) of 1.9 to 2.0, and is a thin film generally used in semiconductors. It is suitable.

Further, a color filter 201 corresponding to the color of each pixel is formed on a transparent material 203, and a layer of a flattening resin 202 is provided thereon.
00 is formed.

The structure of the in-layer microlens array of the present invention has been described above with reference to FIG.

Next, the light-condensing principle of the in-layer microlens of the present invention will be described. The in-layer microlens of the present invention collects light by applying the total reflection phenomenon. That is, FIG.
As shown in FIG. 7, when light travels from a substance having a refractive index n2 to a substance having a refractive index n1 at an angle of Q, when the angle of Q is n2> n1, Q0 satisfying SIN Q0 = n1 / n2 is satisfied. When the angle is larger than the angle, the traveling light utilizes the reflection at the interface.

By utilizing this fact, not only light entering parallel to the optical axis as shown in FIG. 3A, but also light entering obliquely as shown in FIG. Since almost all the light can be led into the photoelectric conversion element 100, the effect of the microlens 200 is greatly enhanced. Therefore, it is possible to condense light having a value very close to the theoretical value of light that can be condensed in a substantially pixel area, and it is possible to easily provide an imaging device having high sensitivity and low noise.

Further, since the light that has entered the non-through hole 108 substantially enters the corresponding photoelectric conversion element due to the total reflection phenomenon, it does not enter the adjacent photoelectric conversion element and does not generate color moire.

Actually, an in-layer microlens array having this structure was formed, and microlenses 200 were formed on the surface layer by photolithography and heat melting of a general photosensitive resin, and the results of evaluation were shown in Table 1.

[0024]

[Table 1] In Table 1, assuming that the case where the in-layer microlens array of the present invention is not formed is 1, it can be understood that the microlens array of the present invention has improved up to 1.6 times.

(Embodiment 2) Next, a method for manufacturing an in-layer microlens of the present invention will be described. FIG. 4 is a view for explaining a method of manufacturing the in-layer microlens of the present invention. The description will be made with reference to this figure.

First, as shown in FIG. 4A, a photoelectric conversion element 100 is placed in a Si substrate 110 by a semiconductor process.
After forming a transistor (not shown) for amplifying and transferring charges, the interlayer insulating film 102 is formed.
And the wiring 103 are formed, and after the planarization process, the light shielding film 101 is formed.
Is formed to a thickness of 0.8 μm.

Next, a light-shielding film resist pattern 107 is formed by photolithography in order to form an opening in the Al alloy film 106, and the Al alloy is etched using the resist pattern 107 as a mask to etch the light-shielding film pattern 10.
1 to form the configuration shown in FIG. At this time, Al
Reactive ion etching using a chlorine-based gas as a film etching gas was performed. Since anisotropic etching can be performed by the reactive ion etching method, the resist pattern 107
And the dimensional conversion difference between the pattern formed by the Al alloy film 106 and the pattern formed by the Al alloy film 106 becomes almost zero, so that an extremely accurate opening can be formed.

Further, as shown in FIG. 4C, using the resist pattern 107 as a mask, the 3.8 μm-thick interlayer insulating film 102 is etched until it reaches the photoelectric conversion element 100 to form a non-through hole 108. I do. This unpenetrated hole 10
8 is formed by performing etching by a reactive ion etching method using CHF3 as an etching gas.
By doing so, since anisotropic etching can be performed, a hole having a side wall perpendicular to the surface can be formed.

After the resist pattern 107 is removed by oxygen plasma, a transparent material 203 is formed until the hole 108 is completely filled. Specifically, the plasma C is formed by using monosilane gas, ammonia gas, and nitrogen gas as materials.
It can be formed by forming a silicon nitride film with a thickness of 4 μm using VD.

Further, the surface of the transparent material 203 is flattened by chemical mechanical polishing (CMP) as shown in FIG.

Of course, planarization may be performed by an etch-back method using a resist and reactive ion etching.

Thereafter, as shown in FIG. 4E, a color filter 201 was repeatedly formed by photolithography using a pigment resist in the order of green, red and blue.

Further, a flattening resin 202 was applied thereon and baked at a high temperature to form a flat surface. afterwards,
A photosensitive resin to be the microlens array 200 was applied, and pixels were patterned.

Then, the pixel pattern is reflowed by baking at a high temperature, and the shape of the microlens array 200 is formed to obtain the structure shown in FIG.

Finally, although not shown in the figure, the resin in the electrode pad portion is exposed by photolithography and dry etching, and wiring is performed to complete the imaging device.

This image pickup device has 1.5 million pixels, and the pixels are formed at a pitch of 5 μm. It has been found that there is almost no reduction in yield as compared with the conventional manufacturing method, and the productivity is extremely high.

Further, when the sensitivity and S / N ratio of the image pickup device were examined by irradiating light, the sensitivity was 1.
A performance improvement of 64 times was recognized, and it was also confirmed that the S / N was very high.

(Embodiment 3) In Embodiment 2, the manufacturing method when the transparent material 203 is a silicon nitride film has been described. This time, by using a photocurable high-refractive index resin, there is provided a manufacturing method which can be formed with low capital investment without using expensive equipment such as CMP.

FIG. 5 is a view for explaining a method of manufacturing an in-layer microlens of the present invention. The description will be made with reference to this figure.

First, as shown in FIG. 5A, a photoelectric conversion element 100 is placed in a Si substrate 110 by a semiconductor process.
And transistor 10 for amplifying and transferring charge
After forming 5, an interlayer insulating film 102 wiring is formed, and after a planarization process, an Al alloy film 106 serving as the light shielding film 101 is formed to a thickness of 0.8 μm.

Next, in order to form an opening in the Al alloy film 106, resist patterning 107 is performed using photolithography. Using this resist pattern 107 as a mask, the Al alloy was etched to form a light-shielding film 101 as shown in FIG. At this time, reactive ion etching using chlorine gas as an etching gas was performed. Since the anisotropic etching can be performed by performing the reactive ion etching, the resist pattern 107 and the Al alloy film 1
Since the dimensional conversion difference from 06 is almost zero, an opening with extremely high precision can be formed.

Further, as shown in FIG. 5C, using the resist pattern 107 as a mask, the interlayer insulating film 102 having a thickness of 3.8 μm is etched until it reaches the photoelectric conversion element 100 to form a hole 108. The hole 108 is formed by a reactive ion etching method using C4F8 as an etching gas. By doing so, since anisotropic etching can be performed, a hole having a side wall perpendicular to the surface can be formed.

Then, after the resist pattern 107 is removed by oxygen plasma, a UV-curable acrylic optical resin 205 having a refractive index of 1.56 or more is applied by a dispenser. On the other hand, the surface of the quartz substrate 206 having the same size as the Si wafer and having a mirror-polished surface is subjected to an inert treatment such as vapor deposition of Teflon (registered trademark). After that, the quartz substrate 206 and the Si substrate 110 are bonded.

FIG. 6 is a structural view of an apparatus for bonding the quartz substrate 206 and the Si substrate 110 together.

A vacuum pump 307 is connected to the chamber 302 of this apparatus, and the inside of the chamber can be evacuated.

In this apparatus, a table 300 having a lifting mechanism is provided inside a chamber 302.
The top plate 304 is made of quartz thick enough not to bend even in vacuum.

A substrate obtained by bonding the Si substrate 110 and the quartz substrate 206 to the top plate 304 is pressed to form an adhesive 205
Is made uniform.

The ultraviolet lamp 30 is placed on the top plate 304.
5 are arranged and can be UV-cured in a vacuum.

The Si substrate 110 is placed on the table 300,
The quartz substrate 206 is placed on the arm 301 thereon, and then the chamber 302 is
After evacuating the inside, the table 300 is slowly raised to gently contact the quartz substrate 206 and the Si substrate 110, and then pressed against the top plate 304 at the top of the chamber. Since this top plate is made of thick quartz glass, it has a property of transmitting the ultraviolet light of the ultraviolet lamp at the top. After standing for a while until the film thickness of the UV-curable acrylic optical adhesive 205 becomes uniform, the UV lamp 305 is caused to emit light, and the UV-curable acrylic optical adhesive 205 is emitted.
To cure.

In this manner, curing is performed as shown in FIG. At this time, since the quartz substrate 206 has been subjected to the inert treatment, there is almost no adhesion between the quartz substrate 206 and the Si substrate, so that the quartz substrate 206 can be peeled off with a small amount of force. Therefore, when the quartz substrate is peeled off, the optical resin layer 205 having a flat surface as shown in FIG. 5E can be formed without requiring expensive CMP.

After that, the color filter 20 is
No. 1 was formed in the order of green, red and blue by repeating photolithography using a pigment resist.

Further, a flattening resin was applied thereon, baked at a high temperature to form a flat surface, and a photosensitive resin to become the microlens array 200 was applied and pixels were patterned. Then, the pixel pattern is reflowed by baking at a high temperature to form the shape of the microlens array 200, resulting in the structure shown in FIG.

Finally, although not shown in the figure, the resin at the electrode pad portion is exposed by photolithography and dry etching, and wiring is performed to complete the imaging device.

Similarly, this image pickup device has 1.5 million pixels, and the pixels are formed at a pitch of 5 μm. It has been found that there is almost no decrease in yield as compared with the conventional manufacturing method, and the productivity is very high.

Further, when the sensitivity and S / N ratio of the image pickup device were examined by irradiating light, the sensitivity was 1.
It was confirmed that the performance was improved 63 times and the S / N was very high.

(Embodiment 4) Next, in the present invention, in order to fill the high-aspect non-through hole shown in the manufacturing method of Embodiment 2 with a silicon nitride film, high-density plasma CVD is performed.
However, the present invention provides a method for manufacturing an in-layer microlens array having the effects of the present invention without using it, and without using an expensive and difficult-to-process CMP.

FIG. 7 is a view for explaining a third method of manufacturing the in-layer microlens array of the present invention.

A description will be given with reference to FIG. First, as shown in FIG. 7A, a semiconductor substrate 11 is formed by a semiconductor process.
After forming a photoelectric conversion element 100 and a transistor (not shown) for amplifying / transferring the charge in 0, an interlayer insulating film 102 and a wiring 103 are formed, and after a flattening process, a light shielding film is formed. An Al alloy film 106 to be 101 is formed with a thickness of 0.8 μm.

Next, a light-shielding film resist pattern 107 is formed by photolithography in order to form an opening in the Al alloy film 106, and the Al alloy is etched using the resist pattern 107 as a mask to etch the light-shielding film pattern 10
1 to form the configuration shown in FIG. At this time, Al
Reactive ion etching using a chlorine-based gas as a film etching gas was performed. Since anisotropic etching can be performed by the reactive ion etching method, the resist pattern 107
And the dimensional conversion difference between the pattern formed by the Al alloy film 106 and the pattern formed by the Al alloy film 106 becomes almost zero, so that an extremely accurate opening can be formed.

Further, as shown in FIG. 4C, a hole 108 is formed by etching the 3.8-μm-thick interlayer insulating film 102 using the resist pattern 107 as a mask until it reaches the photoelectric conversion element 100. . This hole 108 is formed by performing etching by a reactive ion etching method using CHF3 as an etching gas. By doing so, anisotropic etching can be performed, so that a non-through hole 108 having a side wall perpendicular to the surface can be formed. After that, the resist pattern 107 is removed by oxygen plasma.

Subsequently, a silicon nitride film is formed by using plasma CVD. The thickness of the film is desirably 0.2 μm or more. If it is 0.2 microns or more, FIG.
This is because the side wall and the bottom surface of the non-through hole 108 are covered with the silicon nitride film 207 as shown in FIG.

Next, as shown in FIG.
After forming the silicon oxide film 208 using VD,
Further, SOG 209 is applied by a spin coating method to perform flattening. Of course, planarization may be performed by an etch-back method using a resist and reactive ion etching.

Thereafter, the color filter 201 was formed by repeatedly performing photolithography using a pigment resist in the order of green, red, and blue, and then a flattening resin 202 was applied and baked at a high temperature to form a flat surface. Thereafter, a photosensitive resin to be the microlens array 200 was applied, and the pixels were patterned.

Then, the pixel pattern is reflowed by baking at a high temperature to form the shape of the microlens array 200, and the structure shown in FIG. 7F is obtained.

Finally, although not shown in the figure, the resin at the electrode pad portion is exposed by photolithography and dry etching, and wiring is performed to complete the imaging device.

This image pickup device has 2 million pixels, the pixels are formed at a pitch of 4.2 μm, and it has been found that there is almost no reduction in yield as compared with the conventional manufacturing method, and that the productivity is extremely high.

Further, when the sensitivity and the S / N ratio were examined by irradiating light to the image pickup device, the sensitivity was 1.
A 70-fold improvement in performance was observed, and it was also confirmed that the S / N was very high.

As described above, when this embodiment is used, the in-layer microlens array of the present invention can be manufactured with existing semiconductor equipment without introducing expensive equipment such as special high-density plasma CVD or CMP. Therefore, there is no capital investment,
A CMOS photosensor having high sensitivity can be easily manufactured at low cost.

[0069]

The effects of the present invention described above are as follows. Using conventional manufacturing equipment, light is collected by a microlens and all the light introduced into the opening of the light-shielding film is introduced into the photoelectric conversion element. An imaging device without color moiré can be easily and inexpensively manufactured.

[Brief description of the drawings]

FIG. 1 is a sectional structural view of an in-layer microlens showing a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a total reflection phenomenon that is a principle of the present invention.

FIG. 3 is an explanatory diagram of an effect of the in-layer microlens of the present invention.

FIG. 4 is an explanatory view of a method for manufacturing an in-layer microlens according to a second embodiment of the present invention.

FIG. 5 is an explanatory view of a method for manufacturing an in-layer microlens according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view showing a structure of a vacuum bonding apparatus necessary for realizing a third embodiment of the present invention.

FIG. 7 is an explanatory diagram of a method for manufacturing an in-layer microlens according to a fourth embodiment of the present invention.

FIG. 8 is a diagram illustrating the structure of a conventional image sensor.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 photoelectric conversion element 101 light-shielding film 102 interlayer insulating film 103 wiring 106 Al film 107 resist pattern 108 non-through hole 110 silicon substrate 200 microlens array 201 color filter 202 flattening film 203 transparent material 205 optical adhesive 206 quartz substrate 207 silicon nitride Film 208 silicon oxide film 209 SOG film 300 table 301 arm 302 chamber 304 top plate 305 ultraviolet lamp 307 vacuum pump

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H04N 5/335 H01L 27/14 D 31/02 DF Term (Reference) 4M118 AA01 AA05 AA10 AB01 BA14 CA03 CA40 CB14 EA01 FA06 GA09 GB11 GC08 GD04 5C024 CX41 CY47 CY48 CY49 EX43 EX52 GX03 GY31 5F052 KB06 5F088 BA01 BB03 EA04 HA10 HA20

Claims (8)

[Claims] A plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, wherein a switching element and a wiring are formed adjacent to the photoelectric conversion element, and the switching element and the wiring are formed on the switching element and the wiring; In a solid-state imaging device in which a light-shielding film is formed and an interlayer insulating film is formed between the wiring and the light-shielding film, an opening formed in the light-shielding film has a refractive index higher than that of the interlayer insulating film. A solid-state imaging device, which is filled with a transparent material having a high refractive index. 2. The solid-state imaging device according to claim 1, wherein said transparent material is silicon nitride. 3. The solid-state imaging device according to claim 1, wherein said transparent material is a photocurable resin. 4. A plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, wherein a switching element and a wiring are formed adjacent to the photoelectric conversion element, and the switching element and the wiring are formed on the switching element and the wiring. A light-shielding film is formed, and in a method of manufacturing a solid-state imaging device in which an interlayer insulating film is formed between the wiring and the light-shielding film, (a) after forming the light-shielding film, forming an opening. Perform resist patterning, (b) pattern the light-shielding film, (c) dry-etch the interlayer insulating film up to immediately above the photoelectric conversion element to form a hole, remove the resist, (d) in the hole A method for manufacturing a solid-state imaging device, characterized in that after filling with a transparent material having a refractive index higher than the refractive index of the interlayer insulating film, the interlayer insulating film is flattened. 5. The method for manufacturing a solid-state imaging device according to claim 4, wherein the transparent material is made of a photocurable resin, and the flattening processing is performed by removing the glass substrate that has been inactivated by the light effecting. The solid-state imaging device is characterized in that the solid-state imaging device is bonded to a resin, performs a curing process on the photocurable resin by irradiating the photocurable resin with light through the glass substrate, and peels off the glass substrate. Production method. 6. The method for manufacturing a solid-state imaging device according to claim 5, wherein the bonding of the glass substrate and the photocurable resin is performed in a reduced-pressure atmosphere. Manufacturing method. 7. A plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, wherein a switching element and a wiring are formed adjacent to the photoelectric conversion element, and the switching element and the wiring are formed on the switching element and the wiring. In a solid-state imaging device in which a light-shielding film is formed and an interlayer insulating film is formed between the wiring and the light-shielding film, the solid-state imaging device is provided below the light-shielding film and an opening formed in the light-shielding film. A solid-state imaging device comprising a silicon nitride film formed on the side and bottom surfaces of the hole. 8. A plurality of photoelectric conversion elements provided in a matrix on a silicon substrate, wherein a switching element and a wiring are formed adjacent to the photoelectric conversion element, and the switching element and the wiring are formed on the switching element and the wiring. A method for manufacturing a solid-state imaging device in which a light-shielding film is formed, and an interlayer insulating film is formed between the wiring and the light-shielding film, wherein (a) forming an opening after forming the light-shielding film (B) pattern the light-shielding film by dry etching, and (c) dry-etch the interlayer insulating film under the opening to a position immediately above the photoelectric conversion element to form a hole. After that, the resist is removed, (d) the light shielding film, a silicon nitride film is formed on the side wall and the bottom of the hole,
(e) A method of manufacturing a solid-state imaging device, comprising applying a transparent material having a lower refractive index than that of the silicon nitride film and performing a flattening process.