CN101097846A - 微透镜形成方法以及半导体装置 - Google Patents

微透镜形成方法以及半导体装置 Download PDF

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Publication number
CN101097846A
CN101097846A CNA2007101268281A CN200710126828A CN101097846A CN 101097846 A CN101097846 A CN 101097846A CN A2007101268281 A CNA2007101268281 A CN A2007101268281A CN 200710126828 A CN200710126828 A CN 200710126828A CN 101097846 A CN101097846 A CN 101097846A
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CN
China
Prior art keywords
etching
layer
lens material
material layer
intermediate layer
Prior art date
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Pending
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CNA2007101268281A
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English (en)
Chinese (zh)
Inventor
雨宫宏树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101097846A publication Critical patent/CN101097846A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Ophthalmology & Optometry (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Drying Of Semiconductors (AREA)
CNA2007101268281A 2006-06-28 2007-06-28 微透镜形成方法以及半导体装置 Pending CN101097846A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006178502A JP4826362B2 (ja) 2006-06-28 2006-06-28 マイクロレンズの形成方法
JP2006178502 2006-06-28

Publications (1)

Publication Number Publication Date
CN101097846A true CN101097846A (zh) 2008-01-02

Family

ID=39011546

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007101268281A Pending CN101097846A (zh) 2006-06-28 2007-06-28 微透镜形成方法以及半导体装置

Country Status (4)

Country Link
JP (1) JP4826362B2 (ko)
KR (2) KR20080002638A (ko)
CN (1) CN101097846A (ko)
TW (1) TWI466272B (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101949518A (zh) * 2010-09-29 2011-01-19 上海铭源光源发展有限公司 一种蝇眼透镜结构的制作方法
CN102637704A (zh) * 2011-02-09 2012-08-15 佳能株式会社 光电转换装置和图像感测系统
CN103915455A (zh) * 2013-01-03 2014-07-09 采钰科技股份有限公司 用于光场装置的图像传感器及其制造方法
CN104428896A (zh) * 2012-05-30 2015-03-18 索尼公司 图像拾取元件、图像拾取装置、制造装置及制造方法
US10665627B2 (en) 2017-11-15 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008159748A (ja) * 2006-12-22 2008-07-10 Toppan Printing Co Ltd 固体撮像素子の製造方法及び固体撮像素子
JP2013077740A (ja) 2011-09-30 2013-04-25 Sony Corp 固体撮像素子、固体撮像素子の製造方法、及び、電子機器
WO2013181140A2 (en) * 2012-05-30 2013-12-05 Mattson Technology, Inc. Method for forming microlenses
JP6099345B2 (ja) * 2012-09-27 2017-03-22 シャープ株式会社 レンズおよびその製造方法、固体撮像素子、電子情報機器
JP2015065268A (ja) 2013-09-25 2015-04-09 ソニー株式会社 レンズアレイおよびその製造方法、固体撮像装置、並びに電子機器
JPWO2020122032A1 (ja) * 2018-12-13 2021-10-28 凸版印刷株式会社 固体撮像素子及び固体撮像素子の製造方法
CN110107841B (zh) * 2019-03-13 2023-11-10 赣州市众恒光电科技有限公司 一种出光角可变的防护工矿灯
US11808959B2 (en) 2020-08-11 2023-11-07 Himax Technologies Limited Optical element and wafer level optical module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110952A (ja) * 2000-10-02 2002-04-12 Sony Corp オンチップマイクロレンズの形成方法および固体撮像素子の製造方法
JP4450597B2 (ja) * 2003-09-24 2010-04-14 東京エレクトロン株式会社 マイクロレンズの形成方法
JP4830306B2 (ja) * 2004-06-23 2011-12-07 凸版印刷株式会社 固体撮像素子の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101949518A (zh) * 2010-09-29 2011-01-19 上海铭源光源发展有限公司 一种蝇眼透镜结构的制作方法
CN102637704A (zh) * 2011-02-09 2012-08-15 佳能株式会社 光电转换装置和图像感测系统
CN102637704B (zh) * 2011-02-09 2015-04-29 佳能株式会社 光电转换装置和图像感测系统
US9293493B2 (en) 2011-02-09 2016-03-22 Canon Kabushiki Kaisha Photoelectric conversion apparatus and image sensing system
CN104428896A (zh) * 2012-05-30 2015-03-18 索尼公司 图像拾取元件、图像拾取装置、制造装置及制造方法
CN103915455A (zh) * 2013-01-03 2014-07-09 采钰科技股份有限公司 用于光场装置的图像传感器及其制造方法
CN103915455B (zh) * 2013-01-03 2017-03-01 采钰科技股份有限公司 用于光场装置的图像传感器及其制造方法
US10665627B2 (en) 2017-11-15 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens
TWI730258B (zh) * 2017-11-15 2021-06-11 台灣積體電路製造股份有限公司 影像感測裝置及其形成方法
US11222913B2 (en) 2017-11-15 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device having first lens over a light-sensing region and surrounded by a grid layer
US11791356B2 (en) 2017-11-15 2023-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device having a first lens and a second lens over the first lens

Also Published As

Publication number Publication date
KR20090014134A (ko) 2009-02-06
KR20080002638A (ko) 2008-01-04
TWI466272B (zh) 2014-12-21
JP4826362B2 (ja) 2011-11-30
JP2008009079A (ja) 2008-01-17
TW200810099A (en) 2008-02-16

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