JP4821314B2 - 半導体製造装置用バルブの弁体およびその製造方法 - Google Patents
半導体製造装置用バルブの弁体およびその製造方法 Download PDFInfo
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- JP4821314B2 JP4821314B2 JP2005372718A JP2005372718A JP4821314B2 JP 4821314 B2 JP4821314 B2 JP 4821314B2 JP 2005372718 A JP2005372718 A JP 2005372718A JP 2005372718 A JP2005372718 A JP 2005372718A JP 4821314 B2 JP4821314 B2 JP 4821314B2
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- valve body
- metal
- valve
- semiconductor manufacturing
- manufacturing apparatus
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Images
Landscapes
- Sliding Valves (AREA)
- Details Of Valves (AREA)
- Gasket Seals (AREA)
Description
記
照射条件:
O2、CF4プラズマ ガス流量・・・・・・・・16SCCM
圧力・・・・・・・・20mTorr
出力・・・・・・・・800W
照射時間・・・・・・30分
温度・・・・・・・・150℃
NF3プラズマ NF3/Ar・・・・・・1SLM/1SLM
圧力・・・・・・・・3Torr
照射時間・・・・・・2時間
温度・・・・・・・・150℃
CX1 2=CX1−Rf 1CHR1X2 (1)
(式中、X1は、水素原子、フッ素原子または−CH3、R1 fは、フルオロアルキレン基、パーフルオロアルキレン基、フルオロポリオキシアルキレン基またはパーフルオロポリオキシアルキレン基、R1は、水素原子または−CH3、X2は、ヨウ素原子または臭素原子)で表されるヨウ素または臭素含有単量体、一般式(2):
CF2=CFO(CF2CF(CF3)O)m(CF2)n−X3 (2)
(式中、mは、0〜5の整数、nは、1〜3の整数、X3は、シアノ基、カルボキシル基、アルコキシカルボニル基、臭素原子)で表される単量体などがあげられ、これらをそれぞれ単独で、または任意に組合わせて用いることができる。
R2IxBry (3)
(式中、xおよびyはそれぞれ0〜2の整数であり、かつ1≦x+y≦2を満たすものであり、R2は炭素数1〜16の飽和もしくは不飽和のフルオロ炭化水素基またはクロロフルオロ炭化水素基、または炭素数1〜3の炭化水素基であり、酸素原子を含んでいてもよい)で示される化合物などをあげることができる。このようなヨウ素化合物を用いて得られるフッ素ゴム(a)の末端には、ヨウ素原子または臭素原子が導入される。
で示されるビスアミドキシム系架橋剤などがあげられる。これらのビスアミノフェノール系架橋剤、ビスアミノチオフェノール系架橋剤またはビスジアミノフェニル系架橋剤などは、シアノ基、カルボキシル基、アルコキシカルボニル基と反応し、オキサゾール環、チアゾール環、イミダゾール環を形成し、架橋物を与える。
記
試験装置:超薄膜スクラッチ試験機 MODEL CSR−02((株)レスカ製)
試験条件:
ダイヤモンド圧子針曲率半径・・・・・・5.0μm
弾性アーム・・・・・・146.64g/mm
ステージ角度・・・・・・3.0度
測定速度・・・・・・10.0μm/s
荷重印加速度・・・・・・75.31mN/mm
励振幅・・・・・・79μm
励振周波数・・・・・・30Hz
記
照射条件:
O2、CF4プラズマ ガス流量・・・・・・・・16SCCM
圧力・・・・・・・・20mTorr
出力・・・・・・・・800W
照射時間・・・・・・30分
温度・・・・・・・・150℃
NF3プラズマ NF3/Ar・・・・・・1SLM/1SLM
圧力・・・・・・・・3Torr
照射時間・・・・・・2時間
温度・・・・・・・・150℃
表面粗さ計(機種名:表面形状測定顕微鏡VF−7500、(株)キーエンス製)を用いて測定する。
ベンコットM5(旭化成工業(株)製)を用いて、得られた弁体のエラストマーシール材上のコーティング面を20回擦り、表面の剥離の状態を下記基準により評価する。
○:20回擦り後において剥離がなかった。
△:10〜20回の擦りで剥離した。
×:10回未満の擦りで剥離した。
得られた弁体を用いて、下記条件にて密着性を測定する。なお、試験方法は、ガラス基板を弁体に置換える以外は、JIS R−3255(ガラスを基板とした薄膜の付着性試験方法)に規定された方法と同様の方法で行なう。
試験装置:超薄膜スクラッチ試験機 MODEL CSR−02((株)レスカ製)
試験条件:ダイヤモンド圧子針曲率半径・・・・・・5.0μm
弾性アーム・・・・・・・146.64g/mm
ステージ角度・・・・・・3.0度
測定速度・・・・・・・・10.0μm/s
荷重印加速度・・・・・・75.31mN/mm
励振幅・・・・・・・・・79μm
励振周波数・・・・・・・30Hz
得られた弁体を用いて、以下の条件で耐プラズマ性を測定する。
使用プラズマ照射装置:ICP高密度プラズマ装置((株)サムコインターナショナル研究所製、MODEL RIE−101iPH)
照射条件: ガス流量・・・・・・・・16SCCM
圧力・・・・・・・・20mTorr
出力・・・・・・・・800W
照射時間・・・・・・30分
温度・・・・・・・・150℃
使用プラズマ照射装置:アストロンフッ素原子ジェネレーターAX7657−2(アステックス(ASTEX)社製)
照射条件: NF3/Ar・・・・・・・1SLM/1SLM
圧力・・・・・・・・3Torr
照射時間・・・・・・2時間
温度・・・・・・・・150℃
照射操作:プラズマ照射装置のチャンバー内の雰囲気を安定させるために、チャンバー前処理として5分間かけて実ガス空放電を行なう。ついで被験サンプルを入れたアルミニウム製の容器をRF電極の中心部に配置し、上記の条件下でプラズマを照射する。
重量測定:ザートリウス(Sertorious)・GMBH製の電子分析天秤2006MPE(商品名)を使用し、0.1mgまで測定し0.1mgの桁を四捨五入する。
表面粗度測定:表面粗さ計(機種名:表面形状測定顕微鏡VF−7500、(株)キーエンス製)を用いて測定する。
(フッ素ゴムコンパウンド(A)の作製)
含フッ素エラストマー(ダイエルパーフロGA−105、ダイキン工業(株)製)と、パーヘキサ25B(日本油脂(株)製)とトリアリルイソシアヌレート(TAIC)(日本化成(株)製)と酸化アルミニウムとを重量比100/1/2/15で、オープンロールにて混練して架橋可能なフッ素系エラストマー組成物(A)を得た。
(フッ素ゴムコンパウンド(B)の作製)
含フッ素エラストマー(ダイエルパーフロGA−105、ダイキン工業(株)製)と、パーヘキサ25B(日本油脂(株)製)とトリアリルイソシアヌレート(TAIC)(日本化成(株)製)とポリイミド樹脂粉末UIP−S(宇部興産(株)製)とを重量比100/1/2/15で、オープンロールにて混練して架橋可能なフッ素系エラストマー組成物(B)を得た。
参考例1で得られた架橋可能なフッ素系エラストマー組成物(A)と、弁体本体(図3)を用いて、160℃で、7分間プレスして架橋成形を行なったのち、さらに、180℃のエアーオーブン中で4時間かけてオーブン架橋し、フッ素系エラストマーと弁体が一体化した半導体製造装置用バルブの弁体(A)を得た。このときあらかじめ弁体のゴムと接着する溝部分は、サンドペーパー(#100)を用いて表面を荒らした後に接着剤としてビニルトリメトキシシラン(KBM−1003、信越化学工業(株)製)を刷毛で塗布し、室温で風乾後、さらに150℃で10分間の焼成を行なった。
基材として、参考例2で得られた架橋可能なフッ素系エラストマー組成物(B)を用いた以外は、比較例1と同様にし、フッ素系エラストマーと弁体が一体化した半導体製造装置用バルブの弁体(B)を得た。
比較例1で得た半導体製造装置用バルブの弁体(A)を10%水酸化ナトリウム水溶液によるアルカリ超音波洗浄(45℃)1.5分、一般水道水超音波洗浄1.5分、一般水道水バブリング洗浄1.5分、純水超音波洗浄3分、純水バブリング洗浄1.5分、温純水洗浄 数分の順番で洗浄をした。洗浄後、エラストマーシールの接着された面にイオンプレーティング装置(成膜条件:蒸発材料 Al、放電電流 50A、Ar流量 40SCCM、成膜圧力 0.25mTorr)を用いて、厚さ0.2μmのアルミニウムのコーティング膜を施し、半導体製造装置用バルブの弁体(C)を得た。
半導体製造装置用バルブの弁体(A)に変えて半導体製造装置用バルブの弁体(B)を用いた以外は、実施例1と同様にし、半導体製造装置用バルブの弁体(D)を得た。
2 溝
3 エラストマーシール材
Claims (6)
- 弁体本体のシール側部分にエラストマーシール材が一体化された半導体製造装置用バルブの弁体であって、
前記弁体本体のシール側表面全体に、金属、金属酸化物、金属チッ化物、金属炭化物およびそれらの複合物からなる群より選ばれる1種以上の金属または金属化合物を含むコーティング膜を有する半導体製造装置用バルブの弁体。 - エラストマーシール材が、フッ素ゴムからなるシール材である請求項1記載の半導体製造装置用バルブの弁体。
- コーティング膜の膜厚が、0.005〜1μmである請求項1または2記載の半導体製造装置用バルブの弁体。
- 弁体本体のシール側部分にエラストマーシール材を組み込み一体化する工程、およびエラストマーシール材が一体化された前記弁体本体のシール側表面全体を、金属、金属酸化物、金属チッ化物、金属炭化物およびそれらの複合物からなる群より選ばれる1種以上の金属または金属化合物でコーティングする工程を有する半導体製造装置用バルブの弁体の製造方法。
- コーティングする工程が、真空成膜法により行われる請求項4記載の半導体製造装置用バルブの弁体の製造方法。
- 真空成膜法が、イオンプレーティング法である請求項5記載の半導体製造装置用バルブの弁体の製造方法。
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JP5845640B2 (ja) * | 2011-06-03 | 2016-01-20 | いすゞ自動車株式会社 | 流路切替弁及びそれを備えた内燃機関 |
JP6104927B2 (ja) | 2012-10-09 | 2017-03-29 | 日本バルカー工業株式会社 | 複合シール |
JP5697781B1 (ja) * | 2014-05-26 | 2015-04-08 | 日本バルカー工業株式会社 | 弁体の製造方法 |
EP3492500B1 (en) * | 2017-12-01 | 2023-09-20 | Daikin Industries, Ltd. | Use of a crosslinked product of a fluorine-containing amorphous elastomer |
JP2021080889A (ja) * | 2019-11-20 | 2021-05-27 | 愛三工業株式会社 | Egrバルブ装置 |
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JPS5871906A (ja) * | 1981-10-22 | 1983-04-28 | Daikin Ind Ltd | 含フツ素弾性状共重合体の製法 |
JPS6058962U (ja) * | 1983-09-29 | 1985-04-24 | 富士通株式会社 | Oリング |
JPS61223007A (ja) * | 1985-03-28 | 1986-10-03 | Daikin Ind Ltd | フルオロエラストマ−の乳化重合法 |
US4973634A (en) * | 1989-05-19 | 1990-11-27 | E. I. Du Pont De Nemours And Company | Preparation of bromo-containing perfluoropolymers having iodine curesites |
US4972038A (en) * | 1989-05-19 | 1990-11-20 | E. I. Du Pont De Nemours And Company | Cyano-containing perfluoropolymers having iodine curesites |
JP2945450B2 (ja) * | 1990-07-24 | 1999-09-06 | 古野電気株式会社 | 傾斜センサおよび傾斜角測定装置 |
IT1269514B (it) * | 1994-05-18 | 1997-04-01 | Ausimont Spa | Fluoroelastomeri vulcanizzabili per via perossidica,particolarmente adatti per la fabbricazione di o-ring |
US5579718A (en) * | 1995-03-31 | 1996-12-03 | Applied Materials, Inc. | Slit valve door |
EP0872495B1 (en) * | 1995-12-28 | 2001-11-14 | Daikin Industries, Limited | Fluorine-containing elastic copolymers, curable composition containing the same and sealant made therefrom |
US6045620A (en) * | 1997-07-11 | 2000-04-04 | Applied Materials, Inc. | Two-piece slit valve insert for vacuum processing system |
US6089543A (en) * | 1997-07-11 | 2000-07-18 | Applied Materials, Inc. | Two-piece slit valve door with molded-in-place seal for a vacuum processing system |
JPH11336905A (ja) * | 1998-05-28 | 1999-12-07 | Ckd Corp | バルブのシール構造 |
US6192827B1 (en) * | 1998-07-03 | 2001-02-27 | Applied Materials, Inc. | Double slit-valve doors for plasma processing |
JP3210627B2 (ja) * | 1998-09-30 | 2001-09-17 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
JP2002047480A (ja) * | 2000-07-31 | 2002-02-12 | Mitsubishi Cable Ind Ltd | シール材 |
JP2002047479A (ja) * | 2000-07-31 | 2002-02-12 | Mitsubishi Cable Ind Ltd | シール材 |
JPWO2005050069A1 (ja) * | 2003-11-21 | 2007-06-07 | ダイキン工業株式会社 | 表面コーティングされたシール材 |
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