JP4820879B2 - 非選択ワード線を効果的に制御して不揮発性メモリを読み出す方法 - Google Patents

非選択ワード線を効果的に制御して不揮発性メモリを読み出す方法 Download PDF

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Publication number
JP4820879B2
JP4820879B2 JP2008545686A JP2008545686A JP4820879B2 JP 4820879 B2 JP4820879 B2 JP 4820879B2 JP 2008545686 A JP2008545686 A JP 2008545686A JP 2008545686 A JP2008545686 A JP 2008545686A JP 4820879 B2 JP4820879 B2 JP 4820879B2
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JP
Japan
Prior art keywords
voltage
volatile storage
control gate
word line
storage element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008545686A
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English (en)
Japanese (ja)
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JP2009520310A (ja
Inventor
輝彦 亀井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk Corp
Original Assignee
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/303,193 external-priority patent/US7369437B2/en
Priority claimed from US11/305,588 external-priority patent/US7545675B2/en
Application filed by SanDisk Corp filed Critical SanDisk Corp
Publication of JP2009520310A publication Critical patent/JP2009520310A/ja
Application granted granted Critical
Publication of JP4820879B2 publication Critical patent/JP4820879B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2008545686A 2005-12-16 2006-12-11 非選択ワード線を効果的に制御して不揮発性メモリを読み出す方法 Expired - Fee Related JP4820879B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/303,193 2005-12-16
US11/303,193 US7369437B2 (en) 2005-12-16 2005-12-16 System for reading non-volatile storage with efficient setup
US11/305,588 US7545675B2 (en) 2005-12-16 2005-12-16 Reading non-volatile storage with efficient setup
US11/305,588 2005-12-16
PCT/US2006/046961 WO2007078611A1 (en) 2005-12-16 2006-12-11 Reading non-volatile storage with efficient control of non-selected word lines

Publications (2)

Publication Number Publication Date
JP2009520310A JP2009520310A (ja) 2009-05-21
JP4820879B2 true JP4820879B2 (ja) 2011-11-24

Family

ID=37950913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008545686A Expired - Fee Related JP4820879B2 (ja) 2005-12-16 2006-12-11 非選択ワード線を効果的に制御して不揮発性メモリを読み出す方法

Country Status (5)

Country Link
EP (1) EP1964129A1 (de)
JP (1) JP4820879B2 (de)
KR (1) KR101007371B1 (de)
TW (2) TWI334142B (de)
WO (1) WO2007078611A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129125A (ja) * 2008-11-27 2010-06-10 Toshiba Corp 多値不揮発性半導体メモリ
JP7171949B2 (ja) 2019-11-14 2022-11-15 長江存儲科技有限責任公司 プログラム障害を低減できるメモリデバイスとその消去方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285185A (ja) * 2004-03-29 2005-10-13 Toshiba Corp 半導体記憶装置
JP2007157289A (ja) * 2005-12-07 2007-06-21 Toshiba Corp 不揮発性半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224491A (ja) * 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
KR100562506B1 (ko) * 2003-12-01 2006-03-21 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005285185A (ja) * 2004-03-29 2005-10-13 Toshiba Corp 半導体記憶装置
JP2007157289A (ja) * 2005-12-07 2007-06-21 Toshiba Corp 不揮発性半導体装置

Also Published As

Publication number Publication date
WO2007078611A1 (en) 2007-07-12
KR101007371B1 (ko) 2011-01-13
JP2009520310A (ja) 2009-05-21
KR20080089401A (ko) 2008-10-06
TWI334142B (en) 2010-12-01
TW200737204A (en) 2007-10-01
EP1964129A1 (de) 2008-09-03
TW201027538A (en) 2010-07-16

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