TWI334142B - Method for using non-volatile storage and non-volatile storage system - Google Patents
Method for using non-volatile storage and non-volatile storage system Download PDFInfo
- Publication number
- TWI334142B TWI334142B TW095147162A TW95147162A TWI334142B TW I334142 B TWI334142 B TW I334142B TW 095147162 A TW095147162 A TW 095147162A TW 95147162 A TW95147162 A TW 95147162A TW I334142 B TWI334142 B TW I334142B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- volatile storage
- storage element
- unselected
- read
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 68
- 230000008569 process Effects 0.000 claims description 43
- 238000007667 floating Methods 0.000 claims description 28
- 238000012795 verification Methods 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000012423 maintenance Methods 0.000 claims 1
- 230000010287 polarization Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 239000012071 phase Substances 0.000 description 21
- 238000010586 diagram Methods 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 4
- 239000012073 inactive phase Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000001397 quillaja saponaria molina bark Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930182490 saponin Natural products 0.000 description 1
- 150000007949 saponins Chemical class 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/305,588 US7545675B2 (en) | 2005-12-16 | 2005-12-16 | Reading non-volatile storage with efficient setup |
| US11/303,193 US7369437B2 (en) | 2005-12-16 | 2005-12-16 | System for reading non-volatile storage with efficient setup |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200737204A TW200737204A (en) | 2007-10-01 |
| TWI334142B true TWI334142B (en) | 2010-12-01 |
Family
ID=37950913
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095147162A TWI334142B (en) | 2005-12-16 | 2006-12-15 | Method for using non-volatile storage and non-volatile storage system |
| TW099108720A TW201027538A (en) | 2005-12-16 | 2006-12-15 | Method for using non-volatile storage and non-volatile storage system |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099108720A TW201027538A (en) | 2005-12-16 | 2006-12-15 | Method for using non-volatile storage and non-volatile storage system |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1964129A1 (de) |
| JP (1) | JP4820879B2 (de) |
| KR (1) | KR101007371B1 (de) |
| TW (2) | TWI334142B (de) |
| WO (1) | WO2007078611A1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010129125A (ja) * | 2008-11-27 | 2010-06-10 | Toshiba Corp | 多値不揮発性半導体メモリ |
| WO2021092830A1 (en) * | 2019-11-14 | 2021-05-20 | Yangtze Memory Technologies Co., Ltd. | Memory device capable of reducing program disturbance and erasing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11224491A (ja) * | 1997-12-03 | 1999-08-17 | Sony Corp | 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード |
| KR100562506B1 (ko) * | 2003-12-01 | 2006-03-21 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
| JP4157065B2 (ja) * | 2004-03-29 | 2008-09-24 | 株式会社東芝 | 半導体記憶装置 |
| JP4791812B2 (ja) * | 2005-12-07 | 2011-10-12 | 株式会社東芝 | 不揮発性半導体装置 |
-
2006
- 2006-12-11 WO PCT/US2006/046961 patent/WO2007078611A1/en active Application Filing
- 2006-12-11 JP JP2008545686A patent/JP4820879B2/ja not_active Expired - Fee Related
- 2006-12-11 KR KR1020087017367A patent/KR101007371B1/ko active IP Right Grant
- 2006-12-11 EP EP06845066A patent/EP1964129A1/de not_active Withdrawn
- 2006-12-15 TW TW095147162A patent/TWI334142B/zh not_active IP Right Cessation
- 2006-12-15 TW TW099108720A patent/TW201027538A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009520310A (ja) | 2009-05-21 |
| TW201027538A (en) | 2010-07-16 |
| KR20080089401A (ko) | 2008-10-06 |
| KR101007371B1 (ko) | 2011-01-13 |
| TW200737204A (en) | 2007-10-01 |
| EP1964129A1 (de) | 2008-09-03 |
| JP4820879B2 (ja) | 2011-11-24 |
| WO2007078611A1 (en) | 2007-07-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |