KR101007371B1 - 비-휘발성 워드 라인들의 효율적인 제어로 비-휘발성 저장소자 판독 - Google Patents

비-휘발성 워드 라인들의 효율적인 제어로 비-휘발성 저장소자 판독 Download PDF

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Publication number
KR101007371B1
KR101007371B1 KR1020087017367A KR20087017367A KR101007371B1 KR 101007371 B1 KR101007371 B1 KR 101007371B1 KR 1020087017367 A KR1020087017367 A KR 1020087017367A KR 20087017367 A KR20087017367 A KR 20087017367A KR 101007371 B1 KR101007371 B1 KR 101007371B1
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KR
South Korea
Prior art keywords
voltage
volatile storage
storage element
control gate
read
Prior art date
Application number
KR1020087017367A
Other languages
English (en)
Korean (ko)
Other versions
KR20080089401A (ko
Inventor
데루히코 가메이
Original Assignee
샌디스크 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/305,588 external-priority patent/US7545675B2/en
Priority claimed from US11/303,193 external-priority patent/US7369437B2/en
Application filed by 샌디스크 코포레이션 filed Critical 샌디스크 코포레이션
Publication of KR20080089401A publication Critical patent/KR20080089401A/ko
Application granted granted Critical
Publication of KR101007371B1 publication Critical patent/KR101007371B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming

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  • Engineering & Computer Science (AREA)
  • Read Only Memory (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020087017367A 2005-12-16 2006-12-11 비-휘발성 워드 라인들의 효율적인 제어로 비-휘발성 저장소자 판독 KR101007371B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/305,588 US7545675B2 (en) 2005-12-16 2005-12-16 Reading non-volatile storage with efficient setup
US11/303,193 US7369437B2 (en) 2005-12-16 2005-12-16 System for reading non-volatile storage with efficient setup
US11/305,588 2005-12-16
US11/303,193 2005-12-16

Publications (2)

Publication Number Publication Date
KR20080089401A KR20080089401A (ko) 2008-10-06
KR101007371B1 true KR101007371B1 (ko) 2011-01-13

Family

ID=37950913

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087017367A KR101007371B1 (ko) 2005-12-16 2006-12-11 비-휘발성 워드 라인들의 효율적인 제어로 비-휘발성 저장소자 판독

Country Status (5)

Country Link
EP (1) EP1964129A1 (de)
JP (1) JP4820879B2 (de)
KR (1) KR101007371B1 (de)
TW (2) TWI334142B (de)
WO (1) WO2007078611A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010129125A (ja) * 2008-11-27 2010-06-10 Toshiba Corp 多値不揮発性半導体メモリ
CN110998734A (zh) 2019-11-14 2020-04-10 长江存储科技有限责任公司 能够减少程序干扰的存储器件及其擦除方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050213385A1 (en) * 2004-03-29 2005-09-29 Kabushiki Kaisha Toshiba Semiconductor memory device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11224491A (ja) * 1997-12-03 1999-08-17 Sony Corp 不揮発性半導体記憶装置およびそれを用いたｉｃメモリカード
KR100562506B1 (ko) * 2003-12-01 2006-03-21 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
JP4791812B2 (ja) * 2005-12-07 2011-10-12 株式会社東芝 不揮発性半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050213385A1 (en) * 2004-03-29 2005-09-29 Kabushiki Kaisha Toshiba Semiconductor memory device

Also Published As

Publication number Publication date
TW200737204A (en) 2007-10-01
TWI334142B (en) 2010-12-01
JP4820879B2 (ja) 2011-11-24
KR20080089401A (ko) 2008-10-06
TW201027538A (en) 2010-07-16
JP2009520310A (ja) 2009-05-21
WO2007078611A1 (en) 2007-07-12
EP1964129A1 (de) 2008-09-03

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