JP4817887B2 - 半導体基板の洗浄方法 - Google Patents

半導体基板の洗浄方法 Download PDF

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Publication number
JP4817887B2
JP4817887B2 JP2006056412A JP2006056412A JP4817887B2 JP 4817887 B2 JP4817887 B2 JP 4817887B2 JP 2006056412 A JP2006056412 A JP 2006056412A JP 2006056412 A JP2006056412 A JP 2006056412A JP 4817887 B2 JP4817887 B2 JP 4817887B2
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Prior art keywords
cleaning
silicon wafer
oxide film
ozone
etching
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Japanese (ja)
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JP2007234964A5 (enExample
JP2007234964A (ja
Inventor
良弘 森
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Siltronic AG
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Siltronic AG
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  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2006056412A 2006-03-02 2006-03-02 半導体基板の洗浄方法 Expired - Fee Related JP4817887B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006056412A JP4817887B2 (ja) 2006-03-02 2006-03-02 半導体基板の洗浄方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006056412A JP4817887B2 (ja) 2006-03-02 2006-03-02 半導体基板の洗浄方法

Publications (3)

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JP2007234964A JP2007234964A (ja) 2007-09-13
JP2007234964A5 JP2007234964A5 (enExample) 2009-04-02
JP4817887B2 true JP4817887B2 (ja) 2011-11-16

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JP2006056412A Expired - Fee Related JP4817887B2 (ja) 2006-03-02 2006-03-02 半導体基板の洗浄方法

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5233277B2 (ja) * 2007-12-25 2013-07-10 富士通セミコンダクター株式会社 半導体基板の処理方法及び半導体装置の製造方法
CN104022014A (zh) * 2013-03-01 2014-09-03 中芯国际集成电路制造(上海)有限公司 湿法清洗方法
JP2015041753A (ja) * 2013-08-23 2015-03-02 株式会社東芝 ウェハの洗浄方法
JP6690717B2 (ja) * 2016-08-22 2020-04-28 東京エレクトロン株式会社 塗布方法、塗布装置及び記憶媒体
CN108597986A (zh) * 2018-05-02 2018-09-28 厦门大学深圳研究院 一种基于预氧化处理的硅纳米线阵列的制备方法
JP7251419B2 (ja) * 2019-09-11 2023-04-04 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11111660A (ja) * 1997-10-01 1999-04-23 Toshiba Corp 洗浄方法
JPH11233476A (ja) * 1997-12-01 1999-08-27 Mitsubishi Electric Corp 半導体基板の処理方法
JPH11260778A (ja) * 1998-03-06 1999-09-24 Sony Corp 枚葉式表面洗浄方法及び装置
KR100567530B1 (ko) * 2003-12-30 2006-04-03 주식회사 하이닉스반도체 반도체 소자의 산화막 형성 방법

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