JP4815860B2 - 発光素子及びその製造方法 - Google Patents

発光素子及びその製造方法 Download PDF

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Publication number
JP4815860B2
JP4815860B2 JP2005131055A JP2005131055A JP4815860B2 JP 4815860 B2 JP4815860 B2 JP 4815860B2 JP 2005131055 A JP2005131055 A JP 2005131055A JP 2005131055 A JP2005131055 A JP 2005131055A JP 4815860 B2 JP4815860 B2 JP 4815860B2
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Japan
Prior art keywords
light emitting
layer
rare earth
material layer
emitting element
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JP2005131055A
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Japanese (ja)
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JP2006164938A (ja
JP2006164938A5 (enExample
Inventor
寿和 安田
暁 大前
統之 風田川
出穂 畑田
聡彦 目々澤
克典 簗嶋
啓修 成井
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Sony Corp
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Sony Corp
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Priority to JP2005131055A priority Critical patent/JP4815860B2/ja
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Publication of JP2006164938A5 publication Critical patent/JP2006164938A5/ja
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JP2005131055A 2004-11-11 2005-04-28 発光素子及びその製造方法 Expired - Fee Related JP4815860B2 (ja)

Priority Applications (1)

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JP2005131055A JP4815860B2 (ja) 2004-11-11 2005-04-28 発光素子及びその製造方法

Applications Claiming Priority (3)

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JP2004327382 2004-11-11
JP2004327382 2004-11-11
JP2005131055A JP4815860B2 (ja) 2004-11-11 2005-04-28 発光素子及びその製造方法

Related Child Applications (1)

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JP2008055879A Division JP2008198614A (ja) 2004-11-11 2008-03-06 発光素子及びその製造方法、並びに、発光装置

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JP2006164938A JP2006164938A (ja) 2006-06-22
JP2006164938A5 JP2006164938A5 (enExample) 2008-04-24
JP4815860B2 true JP4815860B2 (ja) 2011-11-16

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529646B2 (ja) * 2004-11-09 2010-08-25 ソニー株式会社 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子
US7923915B2 (en) 2006-12-18 2011-04-12 Industrial Technology Research Institute Display pixel structure and display apparatus
US20080143241A1 (en) * 2006-12-18 2008-06-19 Industrial Technology Research Institute Discharge field emission device, and light source apparatus and display apparatus applying the same
TWI366214B (en) 2006-12-18 2012-06-11 Ind Tech Res Inst Electron emission device and light emitting method
KR20090028413A (ko) * 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
JP5811709B2 (ja) * 2011-09-07 2015-11-11 ソニー株式会社 発光パネル、表示装置および電子機器
DE102013100291B4 (de) * 2013-01-11 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
KR101901173B1 (ko) * 2017-02-20 2018-09-21 전남대학교기술지주회사(주) 자외선 발광 소자 및 그 패키지
WO2019049192A1 (ja) * 2017-09-05 2019-03-14 シャープ株式会社 発光デバイス、発光デバイスの製造方法、発光デバイスの製造装置
CN115172616A (zh) * 2022-07-28 2022-10-11 北京京东方技术开发有限公司 一种显示基板、显示装置及显示基板的制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661307B2 (ja) * 1990-01-31 1997-10-08 日本電気株式会社 半導体レーザ
JPH04341796A (ja) * 1991-05-20 1992-11-27 Fuji Electric Co Ltd 薄膜エレクトロルミネセンス素子の製造方法
JP2743664B2 (ja) * 1991-10-15 1998-04-22 日本電気株式会社 半導体発光素子
JP2931204B2 (ja) * 1994-03-16 1999-08-09 株式会社フジクラ 半導体発光装置の製造方法
JPH0846222A (ja) * 1994-05-31 1996-02-16 Texas Instr Inc <Ti> 注入シリコン共鳴トンネリングダイオードおよびその製造方法
JP3707811B2 (ja) * 1994-09-27 2005-10-19 株式会社東芝 量子効果装置及びその製造方法
JP3600872B2 (ja) * 1996-04-30 2004-12-15 独立行政法人理化学研究所 希土類元素ドープＳｉ材料およびその製造方法
JPH10284800A (ja) * 1997-04-04 1998-10-23 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JPH10321955A (ja) * 1997-05-15 1998-12-04 Matsushita Electric Ind Co Ltd 電子線励起発光素子
JPH1187763A (ja) * 1997-09-09 1999-03-30 Hitachi Ltd ４族系半導体装置、４族系半導体光装置、および４族系半導体高発光部材
JP2001023917A (ja) * 1999-07-06 2001-01-26 Univ Waseda ゆらぎを抑制した半導体装置
JP2001339102A (ja) * 2000-05-29 2001-12-07 Toyota Central Res & Dev Lab Inc 窒化物系化合物半導体発光素子
JP2002069427A (ja) * 2000-06-13 2002-03-08 Matsushita Electric Ind Co Ltd 励起子形成物質、これを用いた発光材料、発光方法および発光素子、並びに発光素子を用いた装置
JP2002124387A (ja) * 2000-10-19 2002-04-26 Sharp Corp キャリア注入型発光素子
JP3484427B2 (ja) * 2001-03-28 2004-01-06 日本碍子株式会社 発光素子
JP3791765B2 (ja) * 2001-06-08 2006-06-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子
EP1410427A4 (en) * 2001-06-14 2008-04-23 Nanodynamics Inc EPITAXIAL-SIO X - BARRIER - / - INSULATION LAYER
JP4246424B2 (ja) * 2001-10-11 2009-04-02 財団法人ファインセラミックスセンター 量子井戸構造を有するＳｉ系半導体デバイスおよびその製造方法
JP2003218366A (ja) * 2002-01-25 2003-07-31 Japan Science & Technology Corp 量子ドット赤外光検出器
KR100442062B1 (ko) * 2002-01-29 2004-07-30 주식회사 럭스퍼트 광소자용 박막, 이를 이용한 광방출구조체 및 그 제조방법
JP2003273397A (ja) * 2002-03-19 2003-09-26 Fuji Xerox Co Ltd 半導体発光素子、半導体複合素子、及び半導体発光素子の製造方法
CN100484349C (zh) * 2002-12-26 2009-04-29 株式会社半导体能源研究所 有机发光元件

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