JP4812192B2 - フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法 - Google Patents

フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法 Download PDF

Info

Publication number
JP4812192B2
JP4812192B2 JP2001228497A JP2001228497A JP4812192B2 JP 4812192 B2 JP4812192 B2 JP 4812192B2 JP 2001228497 A JP2001228497 A JP 2001228497A JP 2001228497 A JP2001228497 A JP 2001228497A JP 4812192 B2 JP4812192 B2 JP 4812192B2
Authority
JP
Japan
Prior art keywords
data
flash memory
page
physical block
valid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001228497A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003044351A5 (enExample
JP2003044351A (ja
Inventor
和也 岩田
重一 小来田
昭夫 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2001228497A priority Critical patent/JP4812192B2/ja
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to PCT/JP2002/007456 priority patent/WO2003012647A1/ja
Priority to KR10-2004-7000299A priority patent/KR20040023643A/ko
Priority to US10/481,921 priority patent/US7039781B2/en
Priority to EP02749352A priority patent/EP1413959A4/en
Priority to CA002452441A priority patent/CA2452441A1/en
Priority to CNB028149815A priority patent/CN1278243C/zh
Priority to TW091116758A priority patent/TW573250B/zh
Publication of JP2003044351A publication Critical patent/JP2003044351A/ja
Publication of JP2003044351A5 publication Critical patent/JP2003044351A5/ja
Application granted granted Critical
Publication of JP4812192B2 publication Critical patent/JP4812192B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S707/00—Data processing: database and file management or data structures
    • Y10S707/99951—File or database maintenance
    • Y10S707/99952—Coherency, e.g. same view to multiple users
    • Y10S707/99953—Recoverability
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S707/00—Data processing: database and file management or data structures
    • Y10S707/99951—File or database maintenance
    • Y10S707/99956—File allocation

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Studio Circuits (AREA)
JP2001228497A 2001-07-27 2001-07-27 フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法 Expired - Fee Related JP4812192B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2001228497A JP4812192B2 (ja) 2001-07-27 2001-07-27 フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法
KR10-2004-7000299A KR20040023643A (ko) 2001-07-27 2002-07-23 플래시 메모리장치 및 그것에 기억된 데이터의 머지방법
US10/481,921 US7039781B2 (en) 2001-07-27 2002-07-23 Flash memory apparatus and method for merging stored data items
EP02749352A EP1413959A4 (en) 2001-07-27 2002-07-23 FLASH MEMORY DEVICE AND METHOD FOR COMBINING DATA STORED THEREIN
PCT/JP2002/007456 WO2003012647A1 (en) 2001-07-27 2002-07-23 Flash memory apparatus and method for merging data stored in the same
CA002452441A CA2452441A1 (en) 2001-07-27 2002-07-23 Flash memory system and method for merging the stored data items
CNB028149815A CN1278243C (zh) 2001-07-27 2002-07-23 用于合并存贮的数据项的按块擦除存储系统和方法
TW091116758A TW573250B (en) 2001-07-27 2002-07-26 Flash memory system and method of merge of storage data

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001228497A JP4812192B2 (ja) 2001-07-27 2001-07-27 フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法

Publications (3)

Publication Number Publication Date
JP2003044351A JP2003044351A (ja) 2003-02-14
JP2003044351A5 JP2003044351A5 (enExample) 2008-09-04
JP4812192B2 true JP4812192B2 (ja) 2011-11-09

Family

ID=19060999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001228497A Expired - Fee Related JP4812192B2 (ja) 2001-07-27 2001-07-27 フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法

Country Status (8)

Country Link
US (1) US7039781B2 (enExample)
EP (1) EP1413959A4 (enExample)
JP (1) JP4812192B2 (enExample)
KR (1) KR20040023643A (enExample)
CN (1) CN1278243C (enExample)
CA (1) CA2452441A1 (enExample)
TW (1) TW573250B (enExample)
WO (1) WO2003012647A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8825946B2 (en) 2012-02-23 2014-09-02 Kabushiki Kaisha Toshiba Memory system and data writing method

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4257824B2 (ja) * 2002-07-03 2009-04-22 シャープ株式会社 半導体記憶装置
US7571287B2 (en) * 2003-03-13 2009-08-04 Marvell World Trade Ltd. Multiport memory architecture, devices and systems including the same, and methods of using the same
JP4563715B2 (ja) * 2003-04-29 2010-10-13 三星電子株式会社 パーシャルコピーバック動作モードを有するフラッシュメモリ装置
CN100422956C (zh) * 2003-08-06 2008-10-01 松下电器产业株式会社 半导体存储卡、存取装置和存取方法
CN100349138C (zh) * 2003-08-08 2007-11-14 倚天资讯股份有限公司 非挥发性存储器存取系统及其循环使用存取空间方法
WO2005029311A1 (ja) * 2003-09-18 2005-03-31 Matsushita Electric Industrial Co., Ltd. 半導体メモリカード、半導体メモリ制御装置及び半導体メモリ制御方法
CN100504812C (zh) * 2003-11-21 2009-06-24 群联电子股份有限公司 随机存取闪存的控制方法
US7350044B2 (en) * 2004-01-30 2008-03-25 Micron Technology, Inc. Data move method and apparatus
US7490283B2 (en) 2004-05-13 2009-02-10 Sandisk Corporation Pipelined data relocation and improved chip architectures
KR100568115B1 (ko) 2004-06-30 2006-04-05 삼성전자주식회사 점진적 머지 방법 및 그것을 이용한 메모리 시스템
DE102004040296B3 (de) 2004-08-19 2006-03-02 Giesecke & Devrient Gmbh Schreiben von Daten in einen nichtflüchtigen Speicher eines tragbaren Datenträgers
JP4192129B2 (ja) * 2004-09-13 2008-12-03 株式会社東芝 メモリ管理装置
KR100664933B1 (ko) * 2004-12-15 2007-01-04 삼성전자주식회사 비휘발성 저장장치에 멀티미디어 데이터를 블록 단위로저장하는 방법 및 장치
US7409473B2 (en) * 2004-12-21 2008-08-05 Sandisk Corporation Off-chip data relocation
KR100684887B1 (ko) * 2005-02-04 2007-02-20 삼성전자주식회사 플래시 메모리를 포함한 데이터 저장 장치 및 그것의 머지방법
US7849381B2 (en) * 2004-12-21 2010-12-07 Sandisk Corporation Method for copying data in reprogrammable non-volatile memory
US8122193B2 (en) 2004-12-21 2012-02-21 Samsung Electronics Co., Ltd. Storage device and user device including the same
JP2006252137A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 不揮発性記憶装置の最適化方法
EP1712985A1 (en) * 2005-04-15 2006-10-18 Deutsche Thomson-Brandt Gmbh Method and system for storing logical data blocks into flash-blocks in multiple non-volatile memories which are connected to at least one common data I/O bus
JP5617873B2 (ja) * 2005-06-06 2014-11-05 ソニー株式会社 記憶装置
US7242623B2 (en) * 2005-07-12 2007-07-10 Infineon Technologies Flash Gmbh & Co. Kg Non-volatile memory cell device, programming element and method for programming data into a plurality of non-volatile memory cells
US7409489B2 (en) * 2005-08-03 2008-08-05 Sandisk Corporation Scheduling of reclaim operations in non-volatile memory
JP2007188552A (ja) * 2006-01-11 2007-07-26 Sharp Corp 半導体記憶装置
CN100476757C (zh) * 2006-07-20 2009-04-08 何纯淳 闪速存储器的回收方法
KR100849221B1 (ko) 2006-10-19 2008-07-31 삼성전자주식회사 비휘발성 메모리의 관리 방법 및 비휘발성 메모리 기반의장치
KR100825802B1 (ko) 2007-02-13 2008-04-29 삼성전자주식회사 기입 데이터의 논리적 페이지보다 이전 논리적 페이지들을가지는 데이터들을 데이터 블록으로부터 복사하는 불휘발성메모리 장치의 데이터 기입 방법
US20100318723A1 (en) * 2007-02-23 2010-12-16 Masahiro Nakanishi Memory controller, nonvolatile memory device, and nonvolatile memory system
CN101281492B (zh) * 2007-04-04 2011-02-02 扬智科技股份有限公司 恢复闪存的对照表的方法
DE602008002278D1 (de) * 2007-05-02 2010-10-07 St Microelectronics Sa Nicht flüchtiger Speicher mit drehbaren Hilfssegmenten
KR101336258B1 (ko) 2007-05-29 2013-12-03 삼성전자 주식회사 비휘발성 메모리의 데이터 처리 장치 및 방법
WO2009001514A1 (ja) * 2007-06-22 2008-12-31 Panasonic Corporation メモリコントローラ、不揮発性記憶装置、ファイルシステム、不揮発性記憶システム、データ書き込み方法及びデータ書き込みプログラム
US8234425B1 (en) 2007-06-27 2012-07-31 Marvell International Ltd. Arbiter module
US7949817B1 (en) 2007-07-31 2011-05-24 Marvell International Ltd. Adaptive bus profiler
TWI381383B (zh) * 2007-11-14 2013-01-01 Netac Technology Co Ltd 快閃記憶體的資料儲存方法
JP4675985B2 (ja) * 2008-03-01 2011-04-27 株式会社東芝 メモリシステム
US8131915B1 (en) 2008-04-11 2012-03-06 Marvell Intentional Ltd. Modifying or overwriting data stored in flash memory
US8683085B1 (en) 2008-05-06 2014-03-25 Marvell International Ltd. USB interface configurable for host or device mode
JP4461187B1 (ja) * 2008-12-24 2010-05-12 株式会社東芝 不揮発性半導体メモリドライブ装置、情報処理装置および不揮発性半導体メモリドライブ装置における記憶領域の管理方法
TWI402747B (zh) * 2009-02-17 2013-07-21 E Ten Information Sys Co Ltd 合併資料的方法及其電子裝置與電腦程式產品
JP2010211618A (ja) * 2009-03-11 2010-09-24 Toshiba Corp 半導体記憶装置
US8423710B1 (en) 2009-03-23 2013-04-16 Marvell International Ltd. Sequential writes to flash memory
US8213236B1 (en) 2009-04-21 2012-07-03 Marvell International Ltd. Flash memory
TWI455133B (zh) 2009-05-26 2014-10-01 Silicon Motion Inc 用來管理一快閃記憶體的複數個區塊之方法以及相關之記憶裝置及其控制器
US8027195B2 (en) * 2009-06-05 2011-09-27 SanDisk Technologies, Inc. Folding data stored in binary format into multi-state format within non-volatile memory devices
US8102705B2 (en) 2009-06-05 2012-01-24 Sandisk Technologies Inc. Structure and method for shuffling data within non-volatile memory devices
US20110002169A1 (en) * 2009-07-06 2011-01-06 Yan Li Bad Column Management with Bit Information in Non-Volatile Memory Systems
US8725935B2 (en) 2009-12-18 2014-05-13 Sandisk Technologies Inc. Balanced performance for on-chip folding of non-volatile memories
US8468294B2 (en) * 2009-12-18 2013-06-18 Sandisk Technologies Inc. Non-volatile memory with multi-gear control using on-chip folding of data
US8144512B2 (en) * 2009-12-18 2012-03-27 Sandisk Technologies Inc. Data transfer flows for on-chip folding
US8688922B1 (en) 2010-03-11 2014-04-01 Marvell International Ltd Hardware-supported memory management
JP5404483B2 (ja) * 2010-03-17 2014-01-29 株式会社東芝 メモリシステム
US8756394B1 (en) 2010-07-07 2014-06-17 Marvell International Ltd. Multi-dimension memory timing tuner
KR101734200B1 (ko) * 2010-12-03 2017-05-11 삼성전자주식회사 적응적 머지를 수행하는 메모리 시스템 및 그것의 데이터 쓰기 방법
TWI553654B (zh) * 2010-12-16 2016-10-11 群聯電子股份有限公司 資料管理方法、記憶體控制器與記憶體儲存裝置
US9342446B2 (en) 2011-03-29 2016-05-17 SanDisk Technologies, Inc. Non-volatile memory system allowing reverse eviction of data updates to non-volatile binary cache
US9396106B2 (en) * 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
JP5801158B2 (ja) * 2011-10-21 2015-10-28 ラピスセミコンダクタ株式会社 Ｒａｍ記憶装置
TWI447646B (zh) 2011-11-18 2014-08-01 Asmedia Technology Inc 資料傳輸裝置及多個指令的整合方法
US8924636B2 (en) 2012-02-23 2014-12-30 Kabushiki Kaisha Toshiba Management information generating method, logical block constructing method, and semiconductor memory device
US8842473B2 (en) 2012-03-15 2014-09-23 Sandisk Technologies Inc. Techniques for accessing column selecting shift register with skipped entries in non-volatile memories
US8681548B2 (en) 2012-05-03 2014-03-25 Sandisk Technologies Inc. Column redundancy circuitry for non-volatile memory
US9116792B2 (en) * 2012-05-18 2015-08-25 Silicon Motion, Inc. Data storage device and method for flash block management
KR101997572B1 (ko) * 2012-06-01 2019-07-09 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 저장 장치 및 그것의 쓰기 방법
KR102147359B1 (ko) 2012-06-29 2020-08-24 삼성전자 주식회사 비휘발성 메모리 장치의 관리 방법 및 비휘발성 메모리 장치
US9076506B2 (en) 2012-09-28 2015-07-07 Sandisk Technologies Inc. Variable rate parallel to serial shift register
US8897080B2 (en) 2012-09-28 2014-11-25 Sandisk Technologies Inc. Variable rate serial to parallel shift register
US9490035B2 (en) 2012-09-28 2016-11-08 SanDisk Technologies, Inc. Centralized variable rate serializer and deserializer for bad column management
CN105573661B (zh) * 2014-10-15 2018-11-09 群联电子股份有限公司 数据写入方法、存储器存储装置及存储器控制电路单元
CN104331266B (zh) * 2014-10-22 2018-04-27 安徽皖通邮电股份有限公司 一种实现任意数据位宽转换的方法和装置
US9934872B2 (en) 2014-10-30 2018-04-03 Sandisk Technologies Llc Erase stress and delta erase loop count methods for various fail modes in non-volatile memory
KR102282952B1 (ko) 2014-12-15 2021-07-30 삼성전자주식회사 스토리지 장치의 동작 방법
KR102211868B1 (ko) 2014-12-15 2021-02-04 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법
US9224502B1 (en) 2015-01-14 2015-12-29 Sandisk Technologies Inc. Techniques for detection and treating memory hole to local interconnect marginality defects
US10032524B2 (en) 2015-02-09 2018-07-24 Sandisk Technologies Llc Techniques for determining local interconnect defects
US9269446B1 (en) 2015-04-08 2016-02-23 Sandisk Technologies Inc. Methods to improve programming of slow cells
US9564219B2 (en) 2015-04-08 2017-02-07 Sandisk Technologies Llc Current based detection and recording of memory hole-interconnect spacing defects
TWI620115B (zh) * 2015-06-17 2018-04-01 旺宏電子股份有限公司 用於寫入資料的方法及設備與儲存媒體
CN106648443B (zh) * 2015-10-30 2019-06-25 群联电子股份有限公司 有效数据合并方法、存储器控制器与存储器存储装置
US10546644B2 (en) * 2017-12-29 2020-01-28 Gigadevice Semiconductor (Beijing) Inc. NAND flash memory and method for destroying information from the NAND flash memory
US11747978B2 (en) 2019-07-23 2023-09-05 International Business Machines Corporation Data compaction in distributed storage system
TWI880534B (zh) * 2023-12-19 2025-04-11 群聯電子股份有限公司 資料寫入方法、記憶體儲存裝置及記憶體控制電路單元

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3407317B2 (ja) * 1991-11-28 2003-05-19 株式会社日立製作所 フラッシュメモリを使用した記憶装置
JPH06222985A (ja) * 1993-01-26 1994-08-12 Oki Electric Ind Co Ltd メモリ制御装置
JPH06301601A (ja) 1993-04-16 1994-10-28 Sony Corp 情報記録装置及び情報転送装置
EP0646869B1 (en) * 1993-04-16 2002-07-03 Sony Corporation Information recording apparatus and information transfer apparatus
JP3215237B2 (ja) * 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み／消去方法
JPH07219720A (ja) * 1993-10-01 1995-08-18 Hitachi Maxell Ltd 半導体メモリ装置ならびにその制御方法
JPH0997207A (ja) * 1995-09-28 1997-04-08 Canon Inc フラッシュｒｏｍ管理方法及び装置及びコンピュータ制御装置
US5933847A (en) * 1995-09-28 1999-08-03 Canon Kabushiki Kaisha Selecting erase method based on type of power supply for flash EEPROM
JP3702515B2 (ja) * 1995-12-04 2005-10-05 富士通株式会社 フラッシュメモリ制御方法及びフラッシュメモリ制御ユニット
JPH10124384A (ja) * 1996-08-28 1998-05-15 Toshiba Corp 不揮発性半導体メモリの制御方法
US6418506B1 (en) * 1996-12-31 2002-07-09 Intel Corporation Integrated circuit memory and method for transferring data using a volatile memory to buffer data for a nonvolatile memory array
JP4079506B2 (ja) * 1997-08-08 2008-04-23 株式会社東芝 不揮発性半導体メモリシステムの制御方法
JP3534585B2 (ja) * 1997-10-21 2004-06-07 株式会社日立製作所 フラッシュメモリを複数使用した外部記憶装置のデータ記憶制御方法及び装置
US6622199B1 (en) * 1999-07-02 2003-09-16 Qualcomm Incorporated Method for minimizing data relocation overhead in flash based file systems

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8825946B2 (en) 2012-02-23 2014-09-02 Kabushiki Kaisha Toshiba Memory system and data writing method

Also Published As

Publication number Publication date
US20040193774A1 (en) 2004-09-30
KR20040023643A (ko) 2004-03-18
CN1537277A (zh) 2004-10-13
CA2452441A1 (en) 2003-02-13
CN1278243C (zh) 2006-10-04
WO2003012647A1 (en) 2003-02-13
EP1413959A4 (en) 2007-10-10
EP1413959A1 (en) 2004-04-28
TW573250B (en) 2004-01-21
US7039781B2 (en) 2006-05-02
JP2003044351A (ja) 2003-02-14

Similar Documents

Publication Publication Date Title
JP4812192B2 (ja) フラッシュメモリ装置、及び、それに記憶されたデータのマージ方法
US8037232B2 (en) Data protection method for power failure and controller using the same
US8583860B2 (en) Block management method for flash memory and controller and storage system using the same
US6996660B1 (en) Memory device and method for storing and reading data in a write-once memory array
CN102332290B (zh) 用来管理和存取闪存模块的控制器
US8055873B2 (en) Data writing method for flash memory, and controller and system using the same
CN101471124B (zh) 存储卡和搭载在存储卡中的卡用控制器以及存储卡的处理装置
US10657048B2 (en) Garbage collection method for data storage device
US8516184B2 (en) Data updating using mark count threshold in non-volatile memory
US7649794B2 (en) Wear leveling method and controller using the same
JPH08137634A (ja) フラッシュディスクカード
US7404031B2 (en) Memory card, nonvolatile semiconductor memory, and method of controlling semiconductor memory
US8745312B2 (en) Storage device and method of mapping a nonvolatile memory based on a map history
US6347355B1 (en) Non-volatile storage, the controlling method, and information memory medium
CN102479549A (zh) 半导体存储装置
KR100522006B1 (ko) 비휘발성 기억장치 및 그 제어방법
CN113096713B (zh) 存储器管理方法、存储器控制电路单元与存储器存储装置
JP4874588B2 (ja) 記憶デバイスおよびホスト機器
JP2004062328A (ja) Ｎａｎｄ型フラッシュメモリを搭載したフラッシュストレージメディア
JP4661497B2 (ja) メモリコントローラ、フラッシュメモリシステム及びフラッシュメモリの制御方法
JP4177292B2 (ja) メモリンコントローラ、フラッシュメモリシステム及びフラッシュメモリの制御方法
CN108062278A (zh) 一种闪存冷热数据分析器及分析方法
JP4177301B2 (ja) メモリコントローラ、フラッシュメモリシステム及びフラッシュメモリの制御方法
JP4792062B2 (ja) メモリカードおよびメモリカードに搭載されるコントローラ
CN109446109B (zh) 一种混合型记录实体映像表的方法

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20050524

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20061129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080723

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110707

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110726

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110823

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140902

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees