JP4806231B2 - 集積炭素ナノチューブセンサ - Google Patents
集積炭素ナノチューブセンサ Download PDFInfo
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- JP4806231B2 JP4806231B2 JP2005238138A JP2005238138A JP4806231B2 JP 4806231 B2 JP4806231 B2 JP 4806231B2 JP 2005238138 A JP2005238138 A JP 2005238138A JP 2005238138 A JP2005238138 A JP 2005238138A JP 4806231 B2 JP4806231 B2 JP 4806231B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 17
- 239000002041 carbon nanotube Substances 0.000 title claims description 17
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims description 17
- 230000035882 stress Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 12
- 230000002950 deficient Effects 0.000 claims description 9
- 230000008646 thermal stress Effects 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 15
- 239000002184 metal Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000002071 nanotube Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000003745 diagnosis Methods 0.000 description 2
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- 125000006850 spacer group Chemical group 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000000411 inducer Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/20—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising components having an active region that includes an inorganic semiconductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S977/761—Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S977/765—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less with specified cross-sectional profile, e.g. belt-shaped
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Materials Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Carbon And Carbon Compounds (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
10:ウェハ
15:スペーサ
22:ドレイン
24:ソース
25:ゲート絶縁体層
30:ゲート
35:第1の層間誘電体層
40:第2の層間誘電体層
45:コンタクト及びビア/金属相互接続部構造
46:コンタクト及びビア/金属相互接続部構造
50:CNT FETゲート
52:CNT FETドレイン
54:CNT FETソース
55:ナノチューブ
Claims (18)
- 監視されるべきデバイスと、
前記監視されるべきデバイスの近傍の炭素ナノチューブ電界効果トランジスタ(CNT FET)と、
を備える集積回路。 - 前記CNT FETが、前記監視されるべきデバイスからの、温度、電圧、電流、電界及び磁界信号のいずれかを含む信号を感知する、請求項1に記載の集積回路。
- 前記CNT FETが、前記集積回路における、機械的応力及び歪み、並びに熱的応力及び歪みのいずれかを含む応力及び歪みを計測する、請求項1に記載の集積回路。
- 前記CNT FETが、前記集積回路内の欠陥回路を検出する、請求項1に記載の集積回路。
- 前記監視されるべきデバイスが、金属酸化物半導体構成に構成されたトランジスタを含む、請求項1に記載の集積回路。
- 前記監視されるべきデバイスが、
ゲートと、
ソース領域と、
ドレイン領域と、
前記ソース領域及び前記ドレイン領域の各々から前記ゲートを分離するゲート絶縁体層と、
を含む、請求項1に記載の集積回路。 - 前記CNT FETが、
CNT FETゲートと、
CNT FETソース領域と、
CNT FETドレイン領域と、
前記CNT FETソース領域と前記CNT FETドレイン領域とを分離する炭素ナノチューブを含む、請求項6に記載の集積回路。 - 前記監視されるべきデバイスのゲート及び前記CNT FETゲートが、共用構造を備える、請求項7に記載の集積回路。
- 前記監視されるべきデバイスのソース領域及び前記CNT FETソース領域が、共用構造を備える、請求項7に記載の集積回路。
- 前記監視されるべきデバイスが、電界効果トランジスタ、ダイオード、配線、ビア、抵抗、インダクタ、及びキャパシタのいずれかを含む、請求項1に記載の集積回路。
- 主トランジスタと、
前記主トランジスタから離間された埋め込み炭素ナノチューブ電界効果トランジスタ(CNT FET)であって、前記主トランジスタからの信号を感知するCNT FETと、
を備える集積回路。 - 前記信号が、温度、電圧、電流、電界及び磁界信号のいずれかを含む、請求項11に記載の集積回路。
- 前記CNT FETが、前記集積回路における、機械的応力及び歪み、並びに熱的応力及び歪みのいずれかを含む応力及び歪みを計測する、請求項11に記載の集積回路。
- 前記CNT FETが、前記集積回路内の欠陥回路を検出する、請求項11に記載の集積回路。
- 集積回路の動作パラメータを評価する方法であって、
前記集積回路内に主トランジスタを形成するステップと、
前記集積回路内に炭素ナノチューブ電界効果トランジスタ(CNT FET)を埋め込むステップと、
前記主トランジスタを動作させるステップと、
前記CNT FETを用いて前記主トランジスタからの信号を検出するステップと、
を含む方法。 - 前記検出するステップにおいて、前記信号は、温度、電圧、電流、電界及び磁界信号のいずれかを含む、請求項15に記載の方法。
- 前記集積回路における、機械的応力及び歪み並びに熱的応力及び歪みのいずれかを含む応力及び歪みを、前記CNT FETを用いて計測することをさらに含む、請求項15に記載の方法。
- 前記CNT FETを用いて前記集積回路内の欠陥回路を検出することをさらに含む、請求項15に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/711083 | 2004-08-20 | ||
US10/711,083 US7247877B2 (en) | 2004-08-20 | 2004-08-20 | Integrated carbon nanotube sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006060227A JP2006060227A (ja) | 2006-03-02 |
JP4806231B2 true JP4806231B2 (ja) | 2011-11-02 |
Family
ID=35908806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005238138A Expired - Fee Related JP4806231B2 (ja) | 2004-08-20 | 2005-08-19 | 集積炭素ナノチューブセンサ |
Country Status (4)
Country | Link |
---|---|
US (2) | US7247877B2 (ja) |
JP (1) | JP4806231B2 (ja) |
CN (1) | CN100505257C (ja) |
TW (1) | TWI351772B (ja) |
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KR100657908B1 (ko) * | 2004-11-03 | 2006-12-14 | 삼성전자주식회사 | 분자흡착층을 구비한 메모리 소자 |
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US8409957B2 (en) | 2011-01-19 | 2013-04-02 | International Business Machines Corporation | Graphene devices and silicon field effect transistors in 3D hybrid integrated circuits |
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US8368053B2 (en) | 2011-03-03 | 2013-02-05 | International Business Machines Corporation | Multilayer-interconnection first integration scheme for graphene and carbon nanotube transistor based integration |
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CN104576324A (zh) * | 2013-12-21 | 2015-04-29 | 上海大学 | 碳基电子的制作及互连方法 |
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WO2005065326A2 (en) * | 2003-12-31 | 2005-07-21 | Pettit John W | Optically controlled electrical switching device based on wide bandgap semiconductors |
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2004
- 2004-08-20 US US10/711,083 patent/US7247877B2/en not_active Expired - Fee Related
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- 2005-07-05 CN CNB2005100820355A patent/CN100505257C/zh not_active Expired - Fee Related
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JP2006060227A (ja) | 2006-03-02 |
US7247877B2 (en) | 2007-07-24 |
US7484423B2 (en) | 2009-02-03 |
CN100505257C (zh) | 2009-06-24 |
TW200629582A (en) | 2006-08-16 |
US20060038167A1 (en) | 2006-02-23 |
TWI351772B (en) | 2011-11-01 |
CN1738044A (zh) | 2006-02-22 |
US20070197010A1 (en) | 2007-08-23 |
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