JP4799847B2 - 半導体レーザ素子及びその製造方法 - Google Patents
半導体レーザ素子及びその製造方法 Download PDFInfo
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- JP4799847B2 JP4799847B2 JP2004319489A JP2004319489A JP4799847B2 JP 4799847 B2 JP4799847 B2 JP 4799847B2 JP 2004319489 A JP2004319489 A JP 2004319489A JP 2004319489 A JP2004319489 A JP 2004319489A JP 4799847 B2 JP4799847 B2 JP 4799847B2
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- Prior art keywords
- injection
- resonator
- semiconductor laser
- semiconductor
- mesa
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- 239000004065 semiconductor Substances 0.000 title claims description 218
- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 238000002347 injection Methods 0.000 claims description 150
- 239000007924 injection Substances 0.000 claims description 150
- 239000000758 substrate Substances 0.000 claims description 44
- 238000003776 cleavage reaction Methods 0.000 claims description 41
- 230000007017 scission Effects 0.000 claims description 41
- 239000012212 insulator Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000004020 conductor Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
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- 238000009792 diffusion process Methods 0.000 description 11
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- 230000004888 barrier function Effects 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 238000009826 distribution Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004319489A JP4799847B2 (ja) | 2004-11-02 | 2004-11-02 | 半導体レーザ素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004319489A JP4799847B2 (ja) | 2004-11-02 | 2004-11-02 | 半導体レーザ素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006134943A JP2006134943A (ja) | 2006-05-25 |
| JP2006134943A5 JP2006134943A5 (https=) | 2007-11-08 |
| JP4799847B2 true JP4799847B2 (ja) | 2011-10-26 |
Family
ID=36728242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004319489A Expired - Fee Related JP4799847B2 (ja) | 2004-11-02 | 2004-11-02 | 半導体レーザ素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4799847B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201005696D0 (en) * | 2010-04-06 | 2010-05-19 | Oclaro Technology Plc | Semiconductor laser diodes |
| JP6160141B2 (ja) | 2012-03-22 | 2017-07-12 | 日亜化学工業株式会社 | 半導体レーザ装置 |
| EP3016219B1 (en) | 2014-10-31 | 2018-12-26 | Nichia Corporation | Semiconductor laser element |
| JP7380152B2 (ja) * | 2019-12-03 | 2023-11-15 | ウシオ電機株式会社 | 半導体レーザ素子 |
| CN119447983B (zh) * | 2025-01-09 | 2025-04-04 | 无锡市华辰芯光半导体科技有限公司 | 一种半导体激光器及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03231483A (ja) * | 1990-02-07 | 1991-10-15 | Hitachi Ltd | 半導体レーザ及びその製造方法 |
| JPH10223992A (ja) * | 1997-01-31 | 1998-08-21 | Oki Electric Ind Co Ltd | 半導体素子製造方法 |
| JP3648357B2 (ja) * | 1997-08-22 | 2005-05-18 | 日本オプネクスト株式会社 | 半導体レーザ素子の製造方法 |
| JP2002190644A (ja) * | 2000-10-12 | 2002-07-05 | Fuji Photo Film Co Ltd | 半導体レーザ素子およびその製造方法 |
| JP2003023218A (ja) * | 2001-07-06 | 2003-01-24 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
| JP2003158339A (ja) * | 2001-11-20 | 2003-05-30 | Mitsui Chemicals Inc | 半導体レーザ素子 |
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2004
- 2004-11-02 JP JP2004319489A patent/JP4799847B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006134943A (ja) | 2006-05-25 |
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