JP2006134943A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006134943A5 JP2006134943A5 JP2004319489A JP2004319489A JP2006134943A5 JP 2006134943 A5 JP2006134943 A5 JP 2006134943A5 JP 2004319489 A JP2004319489 A JP 2004319489A JP 2004319489 A JP2004319489 A JP 2004319489A JP 2006134943 A5 JP2006134943 A5 JP 2006134943A5
- Authority
- JP
- Japan
- Prior art keywords
- resonator
- injection
- laser device
- semiconductor
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 29
- 238000002347 injection Methods 0.000 claims 20
- 239000007924 injection Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000003776 cleavage reaction Methods 0.000 claims 3
- 230000007017 scission Effects 0.000 claims 3
- 239000012212 insulator Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004319489A JP4799847B2 (ja) | 2004-11-02 | 2004-11-02 | 半導体レーザ素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004319489A JP4799847B2 (ja) | 2004-11-02 | 2004-11-02 | 半導体レーザ素子及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006134943A JP2006134943A (ja) | 2006-05-25 |
| JP2006134943A5 true JP2006134943A5 (https=) | 2007-11-08 |
| JP4799847B2 JP4799847B2 (ja) | 2011-10-26 |
Family
ID=36728242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004319489A Expired - Fee Related JP4799847B2 (ja) | 2004-11-02 | 2004-11-02 | 半導体レーザ素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4799847B2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201005696D0 (en) * | 2010-04-06 | 2010-05-19 | Oclaro Technology Plc | Semiconductor laser diodes |
| JP6160141B2 (ja) | 2012-03-22 | 2017-07-12 | 日亜化学工業株式会社 | 半導体レーザ装置 |
| EP3016219B1 (en) | 2014-10-31 | 2018-12-26 | Nichia Corporation | Semiconductor laser element |
| JP7380152B2 (ja) * | 2019-12-03 | 2023-11-15 | ウシオ電機株式会社 | 半導体レーザ素子 |
| CN119447983B (zh) * | 2025-01-09 | 2025-04-04 | 无锡市华辰芯光半导体科技有限公司 | 一种半导体激光器及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03231483A (ja) * | 1990-02-07 | 1991-10-15 | Hitachi Ltd | 半導体レーザ及びその製造方法 |
| JPH10223992A (ja) * | 1997-01-31 | 1998-08-21 | Oki Electric Ind Co Ltd | 半導体素子製造方法 |
| JP3648357B2 (ja) * | 1997-08-22 | 2005-05-18 | 日本オプネクスト株式会社 | 半導体レーザ素子の製造方法 |
| JP2002190644A (ja) * | 2000-10-12 | 2002-07-05 | Fuji Photo Film Co Ltd | 半導体レーザ素子およびその製造方法 |
| JP2003023218A (ja) * | 2001-07-06 | 2003-01-24 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
| JP2003158339A (ja) * | 2001-11-20 | 2003-05-30 | Mitsui Chemicals Inc | 半導体レーザ素子 |
-
2004
- 2004-11-02 JP JP2004319489A patent/JP4799847B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5609939B2 (ja) | 半導体装置 | |
| JP5261980B2 (ja) | 絶縁ゲート型半導体装置の製造方法 | |
| JP5764846B2 (ja) | 高電圧垂直トランジスタのためのセグメントピラーレイアウト | |
| US20150349113A1 (en) | Semiconductor device | |
| JP2009088425A5 (https=) | ||
| JP7312997B2 (ja) | 半導体発光素子 | |
| JP6616878B2 (ja) | 半導体装置 | |
| JP2012064849A5 (https=) | ||
| JP5810720B2 (ja) | 量子カスケード半導体レーザ、レーザ装置および量子カスケード半導体レーザの製造方法 | |
| CN107910748A (zh) | 半导体激光器巴条、半导体激光器单管及其制备方法 | |
| JP2016122705A5 (https=) | ||
| JP2006134943A5 (https=) | ||
| JP2011134970A (ja) | 炭化珪素半導体装置およびその製造方法 | |
| JP2018157022A5 (https=) | ||
| JP2021034543A5 (https=) | ||
| PL1766740T3 (pl) | Przestrajalny unipolarny laser | |
| JP2007266575A5 (https=) | ||
| CN105244761B (zh) | 量子级联激光器相干阵列结构、激光器及其制造方法 | |
| JP2010108993A (ja) | バー状半導体レーザ素子およびその製造方法 | |
| JP2001044421A5 (https=) | ||
| JP2014150211A5 (https=) | ||
| JP2002232080A5 (https=) | ||
| JP6528594B2 (ja) | 半導体装置 | |
| JP2006278661A5 (https=) | ||
| JPWO2022004807A5 (https=) |