JP2006134943A5 - - Google Patents

Claims (11)

A semiconductor substrate of the first conductivity type;
An active layer provided on an upper surface of the semiconductor substrate;
A semiconductor layer of the second conductivity type formed on the active layer;
The semiconductor substrate, the active layer, and an elongated resonator formed by the semiconductor layer are formed to correspond to each other from end to end, and current is supplied to the active layer portion of the resonator. An electrode for injecting,
At least one end side of the resonator includes a non-injection portion made of an insulator for preventing current injection into the active layer and an injection portion for injecting current into the active layer. A semiconductor laser device, wherein the semiconductor laser device is provided periodically along a direction. Two grooves provided so as to reach a halfway depth from the upper surface of the semiconductor layer;
A mesa made of the semiconductor layer formed between the two grooves;
An insulating film provided on the upper surface of the semiconductor layer excluding the upper surface of the mesa;
The electrode is electrically connected to the top surface of the mesa;
The semiconductor laser device according to claim 1, wherein a lower portion of the mesa constitutes the resonator.   2. The semiconductor laser device according to claim 1, wherein the non-injection portions are arranged at a constant length and a constant pitch.   The length of the one or more non-injection portions adjacent to the end face of the resonator is shorter than the length of the non-injection portion on the back side of the resonator excluding these non-injection portions. The semiconductor laser device according to claim 1.   2. The semiconductor according to claim 1, wherein the length of the non-injection part is constant, and an interval between the adjacent non-injection parts gradually increases from the end face of the resonator toward the back. Laser element. Preparing a semiconductor substrate of the first conductivity type;
Forming an active layer on the upper surface of the semiconductor substrate;
Forming a semiconductor layer of the second conductivity type on the active layer;
Two grooves are formed at predetermined intervals so as to remove the semiconductor layer, and a plurality of protruding mesa sandwiched between the two grooves are formed on the active layer, and a resonator is formed under the mesa. Comprising the steps of:
Forming an insulating film covering the upper surface of the semiconductor substrate except for the upper surface of the mesa;
Forming an electrode selectively on the insulating film, a part of which overlaps the mesa; and
Forming an electrode on the lower surface of the semiconductor substrate;
Dividing the semiconductor substrate and each layer thereon between the mesa and the mesa, and cleaving at regular intervals in a direction orthogonal to the mesa to form a plurality of rectangular semiconductor laser elements,
Before the division and the cleavage, a non-injection portion made of an insulator that prevents injection of current into the active layer is periodically formed in the planned cleavage region where the cleavage is performed along the extending direction of the resonator. A method for manufacturing a semiconductor laser device, comprising: 7. The method of manufacturing a semiconductor laser device according to claim 6, wherein the non-injection portions are arranged at a constant length and a constant pitch. The length of the one or more non-injection portions adjacent to the end face of the resonator is formed shorter than the length of the non-injection portion on the back side of the resonator excluding these non-injection portions. A method for manufacturing a semiconductor laser device according to claim 6. The length of the non-injection part is made constant, and an interval between the adjacent non-injection parts is formed so as to be gradually widened at least in a predetermined length region from the end face of the resonator toward the back. 6. A method for producing a semiconductor laser device according to 6. 7. The method of manufacturing a semiconductor laser device according to claim 6, wherein the length of the non-injection portion is sequentially increased in at least a predetermined length region from the end face of the resonator toward the back. The lengths of the non-injection portions are sequentially increased in a predetermined length range from the end face of the resonator toward the back, and the interval between the adjacent non-injection portions is extended from the end face of the resonator to the back. 7. The method of manufacturing a semiconductor laser device according to claim 6, wherein the semiconductor laser device is formed so as to gradually widen at least in a predetermined length region.