JP4793502B2 - 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法 - Google Patents

有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法 Download PDF

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Publication number
JP4793502B2
JP4793502B2 JP2010210149A JP2010210149A JP4793502B2 JP 4793502 B2 JP4793502 B2 JP 4793502B2 JP 2010210149 A JP2010210149 A JP 2010210149A JP 2010210149 A JP2010210149 A JP 2010210149A JP 4793502 B2 JP4793502 B2 JP 4793502B2
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Japan
Prior art keywords
target
organic
reflective electrode
silver alloy
electrode film
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JP2010210149A
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English (en)
Japanese (ja)
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JP2011100719A (ja
JP2011100719A5 (enExample
Inventor
昌三 小見山
郁夫 伊藤
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority to JP2010210149A priority Critical patent/JP4793502B2/ja
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to CN2010800200309A priority patent/CN102421931B/zh
Priority to PCT/JP2010/067817 priority patent/WO2011043486A1/ja
Priority to US13/500,224 priority patent/US8821769B2/en
Priority to EP10822155.7A priority patent/EP2487274B1/en
Priority to KR1020117022697A priority patent/KR101099415B1/ko
Priority to TW099134036A priority patent/TWI385263B/zh
Publication of JP2011100719A publication Critical patent/JP2011100719A/ja
Publication of JP2011100719A5 publication Critical patent/JP2011100719A5/ja
Application granted granted Critical
Publication of JP4793502B2 publication Critical patent/JP4793502B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2010210149A 2009-10-06 2010-09-17 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法 Active JP4793502B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010210149A JP4793502B2 (ja) 2009-10-06 2010-09-17 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
PCT/JP2010/067817 WO2011043486A1 (ja) 2009-10-06 2010-10-05 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
US13/500,224 US8821769B2 (en) 2009-10-06 2010-10-05 Silver alloy target for forming reflection electrode film for organic EL element, and method for manufacturing the silver alloy target
EP10822155.7A EP2487274B1 (en) 2009-10-06 2010-10-05 Silver alloy target for forming reflection electrode film for organic el element, and method for manufacturing the silver alloy target
CN2010800200309A CN102421931B (zh) 2009-10-06 2010-10-05 有机el元件的反射电极膜形成用银合金靶和其制造方法
KR1020117022697A KR101099415B1 (ko) 2009-10-06 2010-10-05 유기 ｅｌ 소자의 반사 전극막 형성용 은 합금 타깃 및 그 제조 방법
TW099134036A TWI385263B (zh) 2009-10-06 2010-10-06 Silver alloy target for forming reflective electrode film for organic electroluminescent element and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009232634 2009-10-06
JP2009232634 2009-10-06
JP2010210149A JP4793502B2 (ja) 2009-10-06 2010-09-17 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2011100719A JP2011100719A (ja) 2011-05-19
JP2011100719A5 JP2011100719A5 (enExample) 2011-07-14
JP4793502B2 true JP4793502B2 (ja) 2011-10-12

Family

ID=43856934

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JP2010210149A Active JP4793502B2 (ja) 2009-10-06 2010-09-17 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法

Country Status (7)

Country Link
US (1) US8821769B2 (enExample)
EP (1) EP2487274B1 (enExample)
JP (1) JP4793502B2 (enExample)
KR (1) KR101099415B1 (enExample)
CN (1) CN102421931B (enExample)
TW (1) TWI385263B (enExample)
WO (1) WO2011043486A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5533545B2 (ja) * 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5806653B2 (ja) * 2011-12-27 2015-11-10 株式会社神戸製鋼所 反射電極用Ａｇ合金膜、反射電極、およびＡｇ合金スパッタリングターゲット
JP5159962B1 (ja) * 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5472353B2 (ja) 2012-03-27 2014-04-16 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP5928218B2 (ja) * 2012-07-20 2016-06-01 三菱マテリアル株式会社 Ａｇ合金膜及びその製造方法
JP2014196562A (ja) * 2012-12-21 2014-10-16 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5522599B1 (ja) * 2012-12-21 2014-06-18 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5612147B2 (ja) * 2013-03-11 2014-10-22 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
CN105316630B (zh) * 2014-06-04 2020-06-19 光洋应用材料科技股份有限公司 银合金靶材、其制造方法及应用该靶材的有机发光二极管
DE102014214683A1 (de) 2014-07-25 2016-01-28 Heraeus Deutschland GmbH & Co. KG Sputtertarget auf der Basis einer Silberlegierung
EP3168325B1 (de) 2015-11-10 2022-01-05 Materion Advanced Materials Germany GmbH Sputtertarget auf der basis einer silberlegierung
CN106893989B (zh) * 2016-12-29 2019-10-01 昆山全亚冠环保科技有限公司 一种银钛合金靶材防开裂轧制工艺
WO2019163745A1 (ja) * 2018-02-20 2019-08-29 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金スパッタリングターゲットの製造方法
JP2019143242A (ja) 2018-02-20 2019-08-29 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金スパッタリングターゲットの製造方法
CN117070905A (zh) * 2023-09-19 2023-11-17 芜湖映日科技股份有限公司 一种超大尺寸银合金靶材及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2857015B2 (ja) * 1993-04-08 1999-02-10 株式会社ジャパンエナジー 高純度アルミニウムまたはその合金からなるスパッタリングターゲット
CN1217028C (zh) 2001-03-16 2005-08-31 石福金属兴业株式会社 溅射靶材
AU2003242423A1 (en) * 2002-05-28 2003-12-12 Ishifuku Metal Industry Co., Ltd. Sputtering target material
KR100568392B1 (ko) * 2002-06-24 2006-04-05 가부시키가이샤 코베루코 카겐 은 합금 스퍼터링 타겟 및 그의 제조 방법
JP4264302B2 (ja) * 2002-06-24 2009-05-13 株式会社コベルコ科研 銀合金スパッタリングターゲットとその製造方法
JP4384453B2 (ja) 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
JP4351144B2 (ja) * 2004-12-08 2009-10-28 田中貴金属工業株式会社 銀合金

Also Published As

Publication number Publication date
TW201131001A (en) 2011-09-16
JP2011100719A (ja) 2011-05-19
TWI385263B (zh) 2013-02-11
EP2487274A4 (en) 2017-05-24
KR20110113214A (ko) 2011-10-14
CN102421931A (zh) 2012-04-18
US8821769B2 (en) 2014-09-02
EP2487274B1 (en) 2018-09-26
EP2487274A1 (en) 2012-08-15
WO2011043486A1 (ja) 2011-04-14
CN102421931B (zh) 2013-10-30
KR101099415B1 (ko) 2011-12-27
US20120193589A1 (en) 2012-08-02

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