JP4781066B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4781066B2
JP4781066B2 JP2005278118A JP2005278118A JP4781066B2 JP 4781066 B2 JP4781066 B2 JP 4781066B2 JP 2005278118 A JP2005278118 A JP 2005278118A JP 2005278118 A JP2005278118 A JP 2005278118A JP 4781066 B2 JP4781066 B2 JP 4781066B2
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Japan
Prior art keywords
film
insulating film
region
semiconductor
electrode
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Expired - Fee Related
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JP2005278118A
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English (en)
Japanese (ja)
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JP2006128650A (ja
JP2006128650A5 (enExample
Inventor
舜平 山崎
将文 森末
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005278118A priority Critical patent/JP4781066B2/ja
Publication of JP2006128650A publication Critical patent/JP2006128650A/ja
Publication of JP2006128650A5 publication Critical patent/JP2006128650A5/ja
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Publication of JP4781066B2 publication Critical patent/JP4781066B2/ja
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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005278118A 2004-09-30 2005-09-26 表示装置の作製方法 Expired - Fee Related JP4781066B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005278118A JP4781066B2 (ja) 2004-09-30 2005-09-26 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004288050 2004-09-30
JP2004288050 2004-09-30
JP2005278118A JP4781066B2 (ja) 2004-09-30 2005-09-26 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006128650A JP2006128650A (ja) 2006-05-18
JP2006128650A5 JP2006128650A5 (enExample) 2007-11-08
JP4781066B2 true JP4781066B2 (ja) 2011-09-28

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JP2005278118A Expired - Fee Related JP4781066B2 (ja) 2004-09-30 2005-09-26 表示装置の作製方法

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JP (1) JP4781066B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4698998B2 (ja) * 2004-09-30 2011-06-08 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP2008176095A (ja) * 2007-01-19 2008-07-31 Semiconductor Energy Lab Co Ltd パターン形成方法及び薄膜トランジスタの作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000353666A (ja) * 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
JP4099933B2 (ja) * 2000-06-28 2008-06-11 セイコーエプソン株式会社 配線の製造方法、配線及び電気光学装置
TW456048B (en) * 2000-06-30 2001-09-21 Hannstar Display Corp Manufacturing method for polysilicon thin film transistor liquid crystal display panel
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2003318193A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイス、その製造方法及び電子装置
JP4741192B2 (ja) * 2003-01-17 2011-08-03 株式会社半導体エネルギー研究所 半導体装置の作製方法

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JP2006128650A (ja) 2006-05-18

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