JP4781049B2 - 露光装置およびデバイス製造方法 - Google Patents

露光装置およびデバイス製造方法 Download PDF

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Publication number
JP4781049B2
JP4781049B2 JP2005249942A JP2005249942A JP4781049B2 JP 4781049 B2 JP4781049 B2 JP 4781049B2 JP 2005249942 A JP2005249942 A JP 2005249942A JP 2005249942 A JP2005249942 A JP 2005249942A JP 4781049 B2 JP4781049 B2 JP 4781049B2
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Japan
Prior art keywords
exposure
temperature
station
alignment
gas
Prior art date
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Expired - Fee Related
Application number
JP2005249942A
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English (en)
Japanese (ja)
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JP2007067099A (ja
JP2007067099A5 (enExample
Inventor
進太郎 愛知
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005249942A priority Critical patent/JP4781049B2/ja
Priority to US11/468,524 priority patent/US7486378B2/en
Publication of JP2007067099A publication Critical patent/JP2007067099A/ja
Priority to US12/236,630 priority patent/US8184261B2/en
Publication of JP2007067099A5 publication Critical patent/JP2007067099A5/ja
Application granted granted Critical
Publication of JP4781049B2 publication Critical patent/JP4781049B2/ja
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075Handling workpieces outside exposure position, e.g. SMIF box

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005249942A 2005-08-30 2005-08-30 露光装置およびデバイス製造方法 Expired - Fee Related JP4781049B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005249942A JP4781049B2 (ja) 2005-08-30 2005-08-30 露光装置およびデバイス製造方法
US11/468,524 US7486378B2 (en) 2005-08-30 2006-08-30 Exposure apparatus
US12/236,630 US8184261B2 (en) 2005-08-30 2008-09-24 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005249942A JP4781049B2 (ja) 2005-08-30 2005-08-30 露光装置およびデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2007067099A JP2007067099A (ja) 2007-03-15
JP2007067099A5 JP2007067099A5 (enExample) 2008-10-09
JP4781049B2 true JP4781049B2 (ja) 2011-09-28

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Family Applications (1)

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JP2005249942A Expired - Fee Related JP4781049B2 (ja) 2005-08-30 2005-08-30 露光装置およびデバイス製造方法

Country Status (2)

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US (2) US7486378B2 (enExample)
JP (1) JP4781049B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4781049B2 (ja) * 2005-08-30 2011-09-28 キヤノン株式会社 露光装置およびデバイス製造方法
JP2009021555A (ja) * 2007-06-12 2009-01-29 Canon Inc 露光装置
US20090106307A1 (en) * 2007-10-18 2009-04-23 Nova Spivack System of a knowledge management and networking environment and method for providing advanced functions therefor
KR101559425B1 (ko) * 2009-01-16 2015-10-13 삼성전자주식회사 반도체 소자의 제조 방법
JP5290063B2 (ja) * 2009-06-17 2013-09-18 株式会社日立ハイテクノロジーズ プロキシミティ露光装置、プロキシミティ露光装置の基板温度制御方法、及び表示用パネル基板の製造方法
EP2423749B1 (en) 2010-08-24 2013-09-11 ASML Netherlands BV A lithographic apparatus and device manufacturing method
KR102691584B1 (ko) * 2015-02-23 2024-08-05 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 관리 방법, 중첩 계측 방법 및 디바이스 제조 방법
EP3923075A1 (en) * 2020-06-08 2021-12-15 ASML Netherlands B.V. Apparatus for use in a metrology process or lithographic process
US11740564B2 (en) * 2020-06-18 2023-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus and method using the same
CN115903941A (zh) * 2021-08-20 2023-04-04 长鑫存储技术有限公司 控温装置及控温方法
CN115877665A (zh) * 2021-09-29 2023-03-31 长鑫存储技术有限公司 控温装置及控温方法
JP2024153349A (ja) * 2023-04-17 2024-10-29 キヤノン株式会社 温調装置、リソグラフィ装置及び物品の製造方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158626A (ja) * 1984-01-30 1985-08-20 Canon Inc 半導体露光装置
JPH0785112B2 (ja) * 1987-02-16 1995-09-13 キヤノン株式会社 ステージ装置
US4989031A (en) * 1990-01-29 1991-01-29 Nikon Corporation Projection exposure apparatus
JPH03252507A (ja) * 1990-03-02 1991-11-11 Hitachi Ltd レーザ干渉測長装置およびそれを用いた位置決め方法
US5877843A (en) * 1995-09-12 1999-03-02 Nikon Corporation Exposure apparatus
KR100542414B1 (ko) * 1996-03-27 2006-05-10 가부시키가이샤 니콘 노광장치및공조장치
TW333658B (en) * 1996-05-30 1998-06-11 Tokyo Electron Co Ltd The substrate processing method and substrate processing system
US6714278B2 (en) * 1996-11-25 2004-03-30 Nikon Corporation Exposure apparatus
WO1998028665A1 (en) * 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH11204396A (ja) * 1998-01-08 1999-07-30 Canon Inc 半導体製造システムおよびデバイス製造方法
JP2000311844A (ja) * 1999-04-27 2000-11-07 Canon Inc 半導体製造装置
JP3595756B2 (ja) * 2000-06-01 2004-12-02 キヤノン株式会社 露光装置、リソグラフィ装置、ロードロック装置、デバイス製造方法およびリソグラフィ方法
JP2002124451A (ja) * 2000-10-17 2002-04-26 Nikon Corp 温度制御方法、温調チャンバ及び露光装置
WO2002054463A1 (fr) * 2000-12-28 2002-07-11 Nikon Corporation Dispositif d'exposition
WO2002069848A2 (en) * 2001-03-06 2002-09-12 Board Of Regents, The University Of Texas System Apparatus for stent deployment with delivery of bioactive agents
WO2002075795A1 (en) * 2001-03-19 2002-09-26 Nikon Corporation Method and device for exposure, and method of manufacturing device
JP2003115451A (ja) * 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
JP2003114724A (ja) * 2001-10-04 2003-04-18 Canon Inc 非干渉化温調制御装置、協調空調装置、およびこれらを用いる露光装置
US6778258B2 (en) * 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
JP3595791B2 (ja) * 2001-11-19 2004-12-02 キヤノン株式会社 半導体製造装置
JP2004128213A (ja) * 2002-10-02 2004-04-22 Canon Inc 温調システム及びそれを組み込んだ露光装置
JP2004289147A (ja) * 2003-03-06 2004-10-14 Nikon Corp 露光装置とその方法及び電子デバイスの製造方法
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005142382A (ja) 2003-11-07 2005-06-02 Canon Inc 露光装置
WO2005081291A1 (ja) * 2004-02-19 2005-09-01 Nikon Corporation 露光装置及びデバイスの製造方法
JP4418699B2 (ja) * 2004-03-24 2010-02-17 キヤノン株式会社 露光装置
JP4418724B2 (ja) 2004-09-17 2010-02-24 キヤノン株式会社 露光装置
JP4781049B2 (ja) * 2005-08-30 2011-09-28 キヤノン株式会社 露光装置およびデバイス製造方法
JP2009021555A (ja) * 2007-06-12 2009-01-29 Canon Inc 露光装置

Also Published As

Publication number Publication date
US7486378B2 (en) 2009-02-03
JP2007067099A (ja) 2007-03-15
US8184261B2 (en) 2012-05-22
US20090059188A1 (en) 2009-03-05
US20070046911A1 (en) 2007-03-01

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