JP4778716B2 - エッチング組成物 - Google Patents
エッチング組成物 Download PDFInfo
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- JP4778716B2 JP4778716B2 JP2005070912A JP2005070912A JP4778716B2 JP 4778716 B2 JP4778716 B2 JP 4778716B2 JP 2005070912 A JP2005070912 A JP 2005070912A JP 2005070912 A JP2005070912 A JP 2005070912A JP 4778716 B2 JP4778716 B2 JP 4778716B2
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- JP
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- Prior art keywords
- etching
- etching composition
- liquid crystal
- mass
- crystal display
- Prior art date
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- Expired - Fee Related
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- 238000005530 etching Methods 0.000 title claims description 90
- 239000000203 mixture Substances 0.000 title claims description 49
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 36
- 239000010408 film Substances 0.000 claims description 27
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- 239000004973 liquid crystal related substance Substances 0.000 claims description 18
- 239000004094 surface-active agent Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 8
- 239000012498 ultrapure water Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 239000000654 additive Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000000996 additive effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 239000003945 anionic surfactant Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 101710134784 Agnoprotein Proteins 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- UAWBWGUIUMQJIT-UHFFFAOYSA-N azanium;1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate Chemical compound N.OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F UAWBWGUIUMQJIT-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- XLYOFNOQVPJJNP-DYCDLGHISA-N deuterium hydrogen oxide Chemical compound [2H]O XLYOFNOQVPJJNP-DYCDLGHISA-N 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- ODNHQUQWHMGWGT-UHFFFAOYSA-N iridium;oxotin Chemical compound [Ir].[Sn]=O ODNHQUQWHMGWGT-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- ing And Chemical Polishing (AREA)
Description
従って、他の金属配線に影響を及ぼすことなく、適切な蝕刻能力を有するエッチング組成物に対する研究が一層必要な実情にある。
本発明の他の目的は、他の金属配線に影響を及ぼすことなく、同時に蝕刻面が整列され残滓除去効率に優れたエッチング組成物を提供することである。
(a)塩酸12〜30質量%;
(b)酢酸1〜15質量%;
(c)AgNO3、Al(NO3)3、Ba(NO3)2、Ca(NO3)2、Cd(NO3)2、Cd(NO3)3、Ce(NO3)3、Co(NO3)2、Cr(NO3)3、Cu(NO3)2、Eu(NO3)3、Fe(NO3)3、HgNO3、KNO3、La(NO3)3、Mg(NO3)2、NH4NO3、NaNO3、Ni(NO3)2、Pb(NO3)2、PtNO3、Tb(NO3)3、及びZn(NO3)2からなる群から選ばれる1種以上の添加剤0.1〜5質量%;及び
(d)残量の超純水
を含むことを特徴とする薄膜トランジスタ液晶表示装置のエッチング(etching)組成物を提供する。
さらに、本発明は前記エッチング組成物でエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法を提供する。
本発明の薄膜トランジスタ液晶表示装置のエッチング組成物は(a)塩酸12〜30質量%、(b)酢酸1〜15質量%、(c)AgNO3、Al(NO3)3、Ba(NO3)2、Ca(NO3)2、Cd(NO3)2、Cd(NO3)3、Ce(NO3)3、Co(NO3)2、Cr(NO3)3、Cu(NO3)2、Eu(NO3)3、Fe(NO3)3、HgNO3、KNO3、La(NO3)3、Mg(NO3)2、NH4NO3、NaNO3、Ni(NO3)2、Pb(NO3)2、PtNO3、Tb(NO3)3、及びZn(NO3)2からなる群から1種以上選ばれる添加剤0.1〜5質量%、及び(d)残量の超純水を含むことを特徴とする。
本発明に使用される前記(a)の塩酸はエッチング組成物中に12〜30質量%含まれるのが好ましく、15〜20質量%含まれるのがさらに好ましい。その含量が前記範囲内の場合にはITO蝕刻条件で他の金属配線への影響を最小にすることができ、経時変化を減らし得る効果がある。
前記酢酸は、エッチング組成物に1〜15質量%含まれることが好ましく、5〜10質量%含まれることがより好ましい。その含量が前記範囲内の場合には反応速度を適切に調節して、エッチング速度を向上させ、これにより生産性を向上させ得る効果がある。
本発明に用いられる前記(d)の超純水はエッチング組成物の全量を100質量%とする残量分含まれ、エッチング組成物を稀釈する作用をする。
前記のような成分からなる本発明のエッチング組成物は、さらに(e)界面活性剤を追加して含むことができる。
前記界面活性剤はエッチング組成物の表面張力を低めて、大型基板によく延びるようにすることによって、大型基板でエッチングの均一性を増加させ、残滓を除去する作用をする。
前記界面活性剤はエッチング組成物に10〜300ppmで含まれるのが好ましい。その含量が前記範囲内の場合、残滓除去効率に優れると共に、大型基板におけるエッチング均一性を向上させることができる。
塩酸12質量%、酢酸3質量%、添加剤としてNH4NO3 0.1質量%及び残量の超純水を均一に混合してエッチング組成物を製造した。
前記実施例1における成分を下記表1に示す組成比で使用したことを除いては、前記実施例1と同じ方法によりエッチング組成物を製造した。
さらに、ガラス基板上に透明導電膜(ITO膜等)をスパタリングを通じて形成し、フォトレジストをコーティングして現像しパターンを形成させた試料片に前記実施例1〜4及び比較例1〜4のエッチング組成物を45℃の温度に保った後、90秒間浸漬してエッチング性能を測定した。その結果を下記表1に示す。なお、表1の単位は質量%である。
塩酸15質量%、酢酸5質量%、添加剤としてNH4NO3 1.0質量%及び残量の超純水からなるエッチング組成物に下記表2に示した通り、弗素系陰イオン性界面活性剤として、アンモニウムパーフルオロオクチルスルホネートを0、50、100、300、500、1,000ppmでそれぞれ別々に添加した後、均一に混合してエッチング組成物を製造した。なお、表2の単位は質量%である。
さらに、前記界面活性剤の濃度を変えて製造した実施例5〜10及び実施例12〜13のエッチング組成物の表面張力を測定した結果を下記表4及び図1に示した。
Claims (4)
- (a)塩酸12〜30質量%;
(b)酢酸1〜15質量%;
(c)NH 4 NO 3 0.1〜5質量%;及び
(d)残量の超純水
を含むことを特徴とする薄膜トランジスタ液晶表示装置のエッチング組成物。
- 前記エッチング組成物が、さらに(e)界面活性剤10〜300ppmを含む請求項1記載の薄膜トランジスタ液晶表示装置のエッチング組成物。
- 前記薄膜トランジスタ液晶表示装置が薄膜トランジスタ液晶表示装置の透明導電膜である請求項1記載の薄膜トランジスタ液晶表示装置のエッチング組成物。
- 請求項1〜3のいずれか一つの項に記載のエッチング組成物でエッチングする工程を含む薄膜トランジスタ液晶表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KRP2004-0018295 | 2004-03-18 | ||
KR20040018295 | 2004-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005268790A JP2005268790A (ja) | 2005-09-29 |
JP4778716B2 true JP4778716B2 (ja) | 2011-09-21 |
Family
ID=35041922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005070912A Expired - Fee Related JP4778716B2 (ja) | 2004-03-18 | 2005-03-14 | エッチング組成物 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4778716B2 (ja) |
KR (1) | KR101226546B1 (ja) |
CN (1) | CN1670624B (ja) |
TW (1) | TWI364072B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101160829B1 (ko) * | 2005-02-15 | 2012-06-29 | 삼성전자주식회사 | 식각액 조성물 및 박막 트랜지스터 표시판의 제조 방법 |
KR100771314B1 (ko) * | 2006-11-16 | 2007-10-29 | 삼성전기주식회사 | 세라믹 나노 분말을 함유하는 회로 형성용 에칭액 및 이를이용한 회로 형성방법 |
CN103255417B (zh) * | 2011-12-16 | 2016-01-20 | 江阴润玛电子材料股份有限公司 | 一种酸性钼铝钼蚀刻液及其制备工艺 |
CN102732252A (zh) * | 2012-06-21 | 2012-10-17 | 江阴润玛电子材料股份有限公司 | 一种新型王水系ito蚀刻液及制备方法 |
KR102116483B1 (ko) | 2013-10-18 | 2020-05-29 | 삼성디스플레이 주식회사 | 터치 스크린 패널 및 그 제조방법 |
CN104388090B (zh) * | 2014-10-21 | 2017-05-17 | 深圳新宙邦科技股份有限公司 | 一种草酸系ito蚀刻液及其制备方法和应用 |
CN110564420A (zh) * | 2019-08-22 | 2019-12-13 | 合肥中聚合臣电子材料有限公司 | 一种高世代平板用ito蚀刻液 |
CN114085671B (zh) * | 2021-12-14 | 2022-09-02 | 合肥中聚和成电子材料有限公司 | 一种ips型液晶面板用ito刻蚀液及其制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3583583D1 (de) * | 1984-11-17 | 1991-08-29 | Daikin Ind Ltd | Aetzzusammensetzung. |
JPH02135619A (ja) * | 1988-11-17 | 1990-05-24 | Asahi Glass Co Ltd | ウエットエッチング方法 |
JP3458023B2 (ja) * | 1995-08-01 | 2003-10-20 | メック株式会社 | 銅および銅合金のマイクロエッチング剤 |
JPH10110281A (ja) * | 1996-10-03 | 1998-04-28 | Asahi Denka Kogyo Kk | 金属酸化物薄膜のエッチング方法 |
DE60124473T2 (de) * | 2000-09-08 | 2007-09-06 | Kanto Kagaku K.K. | Ätzflüssigkeitszusammensetzung |
JP4897148B2 (ja) * | 2001-03-29 | 2012-03-14 | 富士技研工業株式会社 | 透明導電膜のエッチング液 |
KR100532080B1 (ko) * | 2001-05-07 | 2005-11-30 | 엘지.필립스 엘시디 주식회사 | 비정질 인듐 틴 옥사이드 식각용액 및 이를 이용한 액정표시소자의 제조방법 |
-
2005
- 2005-02-25 TW TW094105805A patent/TWI364072B/zh not_active IP Right Cessation
- 2005-03-14 JP JP2005070912A patent/JP4778716B2/ja not_active Expired - Fee Related
- 2005-03-16 KR KR1020050021921A patent/KR101226546B1/ko active IP Right Grant
- 2005-03-17 CN CN2005100554183A patent/CN1670624B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060043710A (ko) | 2006-05-15 |
JP2005268790A (ja) | 2005-09-29 |
KR101226546B1 (ko) | 2013-01-25 |
CN1670624B (zh) | 2012-11-14 |
CN1670624A (zh) | 2005-09-21 |
TWI364072B (en) | 2012-05-11 |
TW200603279A (en) | 2006-01-16 |
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