JP4777528B2 - カットされた単結晶からなる超音波変換器 - Google Patents

カットされた単結晶からなる超音波変換器 Download PDF

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Publication number
JP4777528B2
JP4777528B2 JP2001065343A JP2001065343A JP4777528B2 JP 4777528 B2 JP4777528 B2 JP 4777528B2 JP 2001065343 A JP2001065343 A JP 2001065343A JP 2001065343 A JP2001065343 A JP 2001065343A JP 4777528 B2 JP4777528 B2 JP 4777528B2
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crystal
cut
lead
thickness
length
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Japanese (ja)
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JP2001313997A5 (enExample
JP2001313997A (ja
Inventor
ジー・チェン
ラジェシュ・クマー・パンダ
ツルベケレ・アール・グルラヤ
ヒーザー・ベック
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Koninklijke Philips NV
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Koninklijke Philips NV
Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2001065343A 2000-03-08 2001-03-08 カットされた単結晶からなる超音波変換器 Expired - Fee Related JP4777528B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/521,167 US6465937B1 (en) 2000-03-08 2000-03-08 Single crystal thickness and width cuts for enhanced ultrasonic transducer
US09/521167 2000-03-08

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JP2001313997A JP2001313997A (ja) 2001-11-09
JP2001313997A5 JP2001313997A5 (enExample) 2008-04-24
JP4777528B2 true JP4777528B2 (ja) 2011-09-21

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JP2001065343A Expired - Fee Related JP4777528B2 (ja) 2000-03-08 2001-03-08 カットされた単結晶からなる超音波変換器

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US (1) US6465937B1 (enExample)
JP (1) JP4777528B2 (enExample)

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US20070034141A1 (en) * 2001-11-02 2007-02-15 Pengdi Han Hybrid stockbarger zone-leveling melting method for directed crystallization and growth of single crystals of lead magnesium niobate-lead titanate (PMN-PT) solid solutions and related piezocrystals
US6737789B2 (en) * 2002-01-18 2004-05-18 Leon J. Radziemski Force activated, piezoelectric, electricity generation, storage, conditioning and supply apparatus and methods
US20050206275A1 (en) * 2002-01-18 2005-09-22 Radziemski Leon J Apparatus and method to generate electricity
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US6821252B2 (en) * 2002-03-26 2004-11-23 G.E. Medical Systems Global Technology Company, Llc Harmonic transducer element structures and properties
KR100628812B1 (ko) * 2003-05-21 2006-09-26 제이에프이 미네랄 가부시키가이샤 압전단결정 소자와 그 제조방법
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US7717850B2 (en) * 2003-11-26 2010-05-18 Imacor Inc. Signal processing for ultrasound imaging
KR100852536B1 (ko) * 2003-10-14 2008-08-14 제이에프이미네라르 가부시키가이샤 압전단결정, 압전단결정소자 및 그 제조방법
JP4373777B2 (ja) * 2003-12-26 2009-11-25 敏夫 小川 圧電デバイス
JP4568529B2 (ja) * 2004-04-30 2010-10-27 Ｊｆｅミネラル株式会社 圧電単結晶素子
JP4613032B2 (ja) * 2004-05-06 2011-01-12 Ｊｆｅミネラル株式会社 圧電単結晶素子およびその製造方法
US20060012270A1 (en) * 2004-07-14 2006-01-19 Pengdi Han Piezoelectric crystal elements of shear mode and process for the preparation thereof
JP4658773B2 (ja) * 2004-10-29 2011-03-23 Ｊｆｅミネラル株式会社 圧電単結晶素子
US7402938B2 (en) * 2004-10-29 2008-07-22 Jfe Mineral Co., Ltd. Piezoelectric single crystal device
JP5168439B2 (ja) * 2005-07-29 2013-03-21 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、およびインクジェットプリンター
JP2007036141A (ja) * 2005-07-29 2007-02-08 Seiko Epson Corp 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、およびインクジェットプリンター
JP2007250626A (ja) * 2006-03-14 2007-09-27 Seiko Epson Corp 圧電素子の製造方法、アクチュエータ装置の製造方法、液体噴射ヘッドの製造方法、液体噴射装置の製造方法および圧電素子
US8203912B2 (en) * 2007-07-31 2012-06-19 Koninklijke Philips Electronics N.V. CMUTs with a high-k dielectric
WO2010097729A1 (en) 2009-02-27 2010-09-02 Koninklijke Philips Electronics, N.V. Pre-collapsed cmut with mechanical collapse retention
US7969073B2 (en) * 2007-12-18 2011-06-28 Trs Technologies, Inc. Tangentially poled single crystal ring resonator
WO2012021608A2 (en) * 2010-08-10 2012-02-16 Trs Technologies, Inc. Temperature and field stable relaxor-pt piezoelectric single crystals
CA2820874A1 (en) * 2010-12-08 2012-06-14 Microfine Materials Technologies Pte Ltd High-performance bending accelerometer
EP2800399A4 (en) * 2011-11-28 2016-02-24 Murata Manufacturing Co PIEZOELECTRIC STACKING ELEMENT AND MULTIFEED DETECTION SENSOR
KR101305271B1 (ko) * 2012-03-22 2013-09-06 한국기계연구원 자기전기 복합체
JP6420234B2 (ja) * 2012-04-04 2018-11-07 ハン ペンディＨＡＮ， Ｐｅｎｇｄｉ Ｅ−ｏ結晶装置に用いるための電気光学結晶素子を製造する方法
KR101688113B1 (ko) * 2012-04-04 2016-12-20 펑디 한 전기광학 단결정소자, 그 제조방법 및 그 소자를 이용한 시스템
US11142843B2 (en) * 2016-09-09 2021-10-12 Brigham Young University Polycrystalline textured materials exhibiting heterogeneous templated grain growth, methods of forming the same, and related systems
CN111515111B (zh) * 2020-04-17 2022-02-11 上海师范大学 基于弛豫铁电单晶薄膜的压电微机械超声换能器及其制备

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US5804907A (en) 1997-01-28 1998-09-08 The Penn State Research Foundation High strain actuator using ferroelectric single crystal
JP3244027B2 (ja) 1997-07-09 2002-01-07 株式会社村田製作所 圧電磁器組成物
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JP3755283B2 (ja) * 1998-02-13 2006-03-15 オムロン株式会社 圧電素子及びその製造方法、圧電素子を用いた振動センサ、圧電アクチュエータ、光スキャナ、歪みセンサ、圧電式振動ジャイロ

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US6465937B1 (en) 2002-10-15
JP2001313997A (ja) 2001-11-09
US20020153809A1 (en) 2002-10-24

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