JP4776829B2 - 自発光装置 - Google Patents
自発光装置 Download PDFInfo
- Publication number
- JP4776829B2 JP4776829B2 JP2001268299A JP2001268299A JP4776829B2 JP 4776829 B2 JP4776829 B2 JP 4776829B2 JP 2001268299 A JP2001268299 A JP 2001268299A JP 2001268299 A JP2001268299 A JP 2001268299A JP 4776829 B2 JP4776829 B2 JP 4776829B2
- Authority
- JP
- Japan
- Prior art keywords
- self
- light
- video signal
- pixel
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 claims description 104
- 238000012937 correction Methods 0.000 claims description 92
- 238000003860 storage Methods 0.000 claims description 34
- 230000008569 process Effects 0.000 claims description 32
- 230000001186 cumulative effect Effects 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- 238000012545 processing Methods 0.000 claims description 19
- 238000005070 sampling Methods 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 claims description 7
- 238000006731 degradation reaction Methods 0.000 claims description 6
- 238000013500 data storage Methods 0.000 claims description 5
- 230000036962 time dependent Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 126
- 238000005401 electroluminescence Methods 0.000 description 115
- 239000010410 layer Substances 0.000 description 76
- 238000005530 etching Methods 0.000 description 51
- 230000006866 deterioration Effects 0.000 description 48
- 239000012535 impurity Substances 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000000463 material Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 16
- 230000006870 function Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 12
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 238000001994 activation Methods 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 150000005072 1,3,4-oxadiazoles Chemical class 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100411598 Mus musculus Rab9a gene Proteins 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- -1 polyphenylene vinylene Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
- G09G2320/048—Preventing or counteracting the effects of ageing using evaluation of the usage time
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
- Control Of Gas Discharge Display Tubes (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001268299A JP4776829B2 (ja) | 2000-09-08 | 2001-09-05 | 自発光装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000273139 | 2000-09-08 | ||
| JP2000-273139 | 2000-09-08 | ||
| JP2000273139 | 2000-09-08 | ||
| JP2001268299A JP4776829B2 (ja) | 2000-09-08 | 2001-09-05 | 自発光装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002175041A JP2002175041A (ja) | 2002-06-21 |
| JP2002175041A5 JP2002175041A5 (enrdf_load_stackoverflow) | 2008-10-16 |
| JP4776829B2 true JP4776829B2 (ja) | 2011-09-21 |
Family
ID=26599540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001268299A Expired - Fee Related JP4776829B2 (ja) | 2000-09-08 | 2001-09-05 | 自発光装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4776829B2 (enrdf_load_stackoverflow) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6774578B2 (en) | 2000-09-19 | 2004-08-10 | Semiconductor Energy Laboratory Co., Ltd. | Self light emitting device and method of driving thereof |
| US6911781B2 (en) | 2002-04-23 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and production system of the same |
| JP2003330419A (ja) | 2002-05-15 | 2003-11-19 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| US7307607B2 (en) | 2002-05-15 | 2007-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Passive matrix light emitting device |
| JP4236422B2 (ja) * | 2002-07-12 | 2009-03-11 | 日立プラズマディスプレイ株式会社 | 表示装置 |
| JP4423848B2 (ja) * | 2002-10-31 | 2010-03-03 | ソニー株式会社 | 画像表示装置、および、その色バランス調整方法 |
| JP2004177557A (ja) * | 2002-11-26 | 2004-06-24 | Mitsubishi Electric Corp | マトリクス型映像表示装置の駆動方法、プラズマディスプレイパネルの駆動方法およびマトリクス型映像表示装置 |
| ATE394769T1 (de) * | 2003-05-23 | 2008-05-15 | Barco Nv | Verfahren zur anzeige von bildern auf einer grossbildschirmanzeige aus organischen leuchtdioden sowie die dazu verwendete anzeige |
| JP4889926B2 (ja) * | 2003-07-31 | 2012-03-07 | 株式会社半導体エネルギー研究所 | 表示装置、及びその駆動方法 |
| US7961160B2 (en) | 2003-07-31 | 2011-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device, a driving method of a display device, and a semiconductor integrated circuit incorporated in a display device |
| JP4887598B2 (ja) * | 2003-10-29 | 2012-02-29 | 日本電気株式会社 | 表示装置及び表示方法 |
| DE10354820A1 (de) * | 2003-11-24 | 2005-06-02 | Ingenieurbüro Kienhöfer GmbH | Verfahren und Vorrichtung zum Betrieb eines verschleißbehafteten Displays |
| JP4506229B2 (ja) * | 2004-03-26 | 2010-07-21 | ソニー株式会社 | 焼き付き補正装置、表示装置、画像処理装置、プログラム及び記録媒体 |
| US8421715B2 (en) | 2004-05-21 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Display device, driving method thereof and electronic appliance |
| US7482629B2 (en) | 2004-05-21 | 2009-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US7245297B2 (en) | 2004-05-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US6989636B2 (en) * | 2004-06-16 | 2006-01-24 | Eastman Kodak Company | Method and apparatus for uniformity and brightness correction in an OLED display |
| JP4705764B2 (ja) * | 2004-07-14 | 2011-06-22 | 株式会社半導体エネルギー研究所 | ビデオデータ補正回路及び表示装置の制御回路並びにそれを内蔵した表示装置・電子機器 |
| US8159478B2 (en) | 2004-09-27 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device using the same |
| JP4653615B2 (ja) * | 2004-09-27 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 表示装置及びそれを用いた電子機器 |
| EP1653433B1 (en) | 2004-10-29 | 2016-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Video data correction circuit, display device and electronic appliance |
| JP4974507B2 (ja) * | 2004-10-29 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 表示装置 |
| EP1820180B1 (en) * | 2004-12-06 | 2014-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic apparatus using the same |
| JP4934963B2 (ja) * | 2005-01-21 | 2012-05-23 | ソニー株式会社 | 焼き付き現象補正方法、自発光装置、焼き付き現象補正装置及びプログラム |
| JP4742615B2 (ja) * | 2005-02-25 | 2011-08-10 | ソニー株式会社 | 焼き付き現象補正方法、自発光装置、焼き付き現象補正装置及びプログラム |
| JP2006235324A (ja) * | 2005-02-25 | 2006-09-07 | Sony Corp | 焼き付き現象補正方法、自発光装置、焼き付き現象補正装置及びプログラム |
| KR101348753B1 (ko) * | 2005-06-10 | 2014-01-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
| JP4876710B2 (ja) * | 2005-09-06 | 2012-02-15 | セイコーエプソン株式会社 | 発光装置および画像形成装置 |
| JP4637710B2 (ja) * | 2005-09-30 | 2011-02-23 | 富士フイルム株式会社 | 露光装置 |
| JP4637712B2 (ja) * | 2005-09-30 | 2011-02-23 | 富士フイルム株式会社 | 露光装置 |
| KR100803542B1 (ko) * | 2006-04-04 | 2008-02-15 | 엘지전자 주식회사 | 플라즈마 디스플레이 장치 및 그 구동 방법 |
| JP4450012B2 (ja) | 2007-05-11 | 2010-04-14 | ソニー株式会社 | 有機elパネルの表示補正回路 |
| JP5213554B2 (ja) | 2008-07-10 | 2013-06-19 | キヤノン株式会社 | 表示装置及びその駆動方法 |
| JP2011112888A (ja) * | 2009-11-27 | 2011-06-09 | Yazaki Corp | 車両用表示装置 |
| JP5373570B2 (ja) * | 2009-11-27 | 2013-12-18 | 矢崎総業株式会社 | 車両用表示装置 |
| EP2731095B1 (en) | 2009-11-27 | 2016-09-28 | Yazaki Corporation | Display device for vehicle |
| KR101560237B1 (ko) * | 2009-12-31 | 2015-10-15 | 엘지디스플레이 주식회사 | 유기전계발광표시장치 |
| WO2013115356A1 (ja) * | 2012-02-02 | 2013-08-08 | 株式会社ニコン | 画像表示装置、電子機器、電子カメラ、及び情報端末 |
| JP2013257578A (ja) * | 2013-07-22 | 2013-12-26 | Japan Display Inc | 画像表示装置 |
| JP6290610B2 (ja) * | 2013-11-25 | 2018-03-07 | 株式会社ジャパンディスプレイ | 表示装置 |
| CN106373535A (zh) * | 2016-08-26 | 2017-02-01 | 深圳市金立通信设备有限公司 | 一种屏幕颜色矫正方法及终端 |
| KR102470405B1 (ko) * | 2018-03-09 | 2022-11-25 | 삼성전자 주식회사 | 디스플레이를 통해 이미지가 표시된 누적 시간에 기반하여, 이미지를 보상하여 표시하는 방법 및 전자 장치 |
| KR102546549B1 (ko) * | 2018-08-08 | 2023-06-23 | 삼성전자주식회사 | 디스플레이에 표시된 이미지의 속성에 기반하여 열화도를 계산하는 방법 및 이를 구현한 전자 장치 |
| CN111445844B (zh) * | 2019-01-17 | 2021-09-21 | 奇景光电股份有限公司 | 累积亮度补偿系统与有机发光二极管显示器 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH049996A (ja) * | 1990-04-27 | 1992-01-14 | Seikosha Co Ltd | エレクトロルミネセンス表示装置 |
| JPH10254410A (ja) * | 1997-03-12 | 1998-09-25 | Pioneer Electron Corp | 有機エレクトロルミネッセンス表示装置及びその駆動方法 |
| JPH1115437A (ja) * | 1997-06-27 | 1999-01-22 | Toshiba Corp | Led表示装置 |
| JPH11109918A (ja) * | 1997-10-03 | 1999-04-23 | Futaba Corp | 有機elディスプレイ装置 |
| US6897855B1 (en) * | 1998-02-17 | 2005-05-24 | Sarnoff Corporation | Tiled electronic display structure |
| JPH11305722A (ja) * | 1998-04-17 | 1999-11-05 | Mitsubishi Electric Corp | ディスプレイ装置 |
| JP2001056670A (ja) * | 1999-08-17 | 2001-02-27 | Seiko Instruments Inc | 自発光表示素子駆動装置 |
| JP2001350442A (ja) * | 1999-10-04 | 2001-12-21 | Matsushita Electric Ind Co Ltd | 表示パネルの駆動方法、表示パネルの輝度補正装置及び駆動装置 |
| JP2002006796A (ja) * | 2000-06-23 | 2002-01-11 | Fujitsu General Ltd | 表示装置 |
-
2001
- 2001-09-05 JP JP2001268299A patent/JP4776829B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002175041A (ja) | 2002-06-21 |
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