JP4763235B2 - プラズマ処理のための装置並びに方法 - Google Patents

プラズマ処理のための装置並びに方法 Download PDF

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Publication number
JP4763235B2
JP4763235B2 JP2003525699A JP2003525699A JP4763235B2 JP 4763235 B2 JP4763235 B2 JP 4763235B2 JP 2003525699 A JP2003525699 A JP 2003525699A JP 2003525699 A JP2003525699 A JP 2003525699A JP 4763235 B2 JP4763235 B2 JP 4763235B2
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gas
flow
pulsed
power
time
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JP2005502198A5 (https=
JP2005502198A (ja
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ストラング、エリック・ジェイ
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2003525699A 2001-08-29 2002-08-29 プラズマ処理のための装置並びに方法 Expired - Fee Related JP4763235B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US31536901P 2001-08-29 2001-08-29
US60/315,369 2001-08-29
PCT/US2002/025955 WO2003021002A1 (en) 2001-08-29 2002-08-29 Apparatus and method for plasma processing

Publications (3)

Publication Number Publication Date
JP2005502198A JP2005502198A (ja) 2005-01-20
JP2005502198A5 JP2005502198A5 (https=) 2010-05-20
JP4763235B2 true JP4763235B2 (ja) 2011-08-31

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JP2003525699A Expired - Fee Related JP4763235B2 (ja) 2001-08-29 2002-08-29 プラズマ処理のための装置並びに方法

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US (1) US7199328B2 (https=)
JP (1) JP4763235B2 (https=)
CN (1) CN100462475C (https=)
WO (1) WO2003021002A1 (https=)

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber
US20060027329A1 (en) * 2004-08-09 2006-02-09 Sinha Ashok K Multi-frequency plasma enhanced process chamber having a torroidal plasma source
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7436645B2 (en) * 2004-10-07 2008-10-14 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
US7648914B2 (en) * 2004-10-07 2010-01-19 Applied Materials, Inc. Method for etching having a controlled distribution of process results
WO2006094162A2 (en) * 2005-03-03 2006-09-08 Applied Materials, Inc. Method for etching having a controlled distribution of process results
JP4506677B2 (ja) 2005-03-11 2010-07-21 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
US8226769B2 (en) 2006-04-27 2012-07-24 Applied Materials, Inc. Substrate support with electrostatic chuck having dual temperature zones
US9275887B2 (en) 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
JP5192209B2 (ja) 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
JP5514413B2 (ja) * 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
US7879732B2 (en) * 2007-12-18 2011-02-01 Chartered Semiconductor Manufacturing Ltd. Thin film etching method and semiconductor device fabrication using same
JP2010118549A (ja) * 2008-11-13 2010-05-27 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8735291B2 (en) 2011-08-25 2014-05-27 Tokyo Electron Limited Method for etching high-k dielectric using pulsed bias power
US8808561B2 (en) * 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
JP6009171B2 (ja) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9287147B2 (en) 2013-03-14 2016-03-15 Applied Materials, Inc. Substrate support with advanced edge control provisions
US9275869B2 (en) * 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
CN104465290B (zh) * 2013-09-24 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种射频脉冲系统的阻抗匹配方法及射频脉冲系统
CN104752139B (zh) * 2013-12-30 2017-03-01 北京北方微电子基地设备工艺研究中心有限责任公司 一种射频脉冲系统及其阻抗匹配方法
JP5921580B2 (ja) * 2014-01-15 2016-05-24 株式会社日立ハイテクノロジーズ プラズマ処理方法
US9309598B2 (en) * 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
JP6316735B2 (ja) * 2014-12-04 2018-04-25 東京エレクトロン株式会社 プラズマエッチング方法
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US20160181116A1 (en) * 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
JP6378234B2 (ja) * 2016-03-22 2018-08-22 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP6541596B2 (ja) * 2016-03-22 2019-07-10 東京エレクトロン株式会社 プラズマ処理方法
JP6392266B2 (ja) * 2016-03-22 2018-09-19 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
JP6592400B2 (ja) 2016-05-19 2019-10-16 東京エレクトロン株式会社 エッチング方法
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
TWI766433B (zh) 2018-02-28 2022-06-01 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11688650B2 (en) * 2019-07-05 2023-06-27 Tokyo Electron Limited Etching method and substrate processing apparatus
JP7493378B2 (ja) * 2019-07-05 2024-05-31 東京エレクトロン株式会社 エッチング処理方法及び基板処理装置
US20210066064A1 (en) * 2019-08-30 2021-03-04 Applied Materials, Inc. Methods and apparatus for cleaning metal contacts
US11322364B2 (en) * 2020-04-01 2022-05-03 Tokyo Electron Limited Method of patterning a metal film with improved sidewall roughness
US11189462B1 (en) * 2020-07-21 2021-11-30 Tokyo Electron Limited Ion stratification using bias pulses of short duration
US11915910B2 (en) 2021-03-25 2024-02-27 Tokyo Electron Limited Fast neutral generation for plasma processing
GB202117193D0 (en) * 2021-11-29 2022-01-12 Spts Technologies Ltd A method of plasma etching

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263827A (ja) * 1990-03-14 1991-11-25 Yasuhiro Horiike デジタルエツチング装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401507A (en) * 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
DE3574997D1 (de) * 1984-03-03 1990-02-01 Stc Plc Pulsierendes plasmaverfahren.
US4891087A (en) 1984-10-22 1990-01-02 Texas Instruments Incorporated Isolation substrate ring for plasma reactor
GB8516537D0 (en) * 1985-06-29 1985-07-31 Standard Telephones Cables Ltd Pulsed plasma apparatus
KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
TW335517B (en) * 1996-03-01 1998-07-01 Hitachi Ltd Apparatus and method for processing plasma
KR0183844B1 (ko) * 1996-04-30 1999-05-15 김광호 알에프 발생 장치 및 이를 이용한 펄스 플라즈마 형성 방법
JP3122618B2 (ja) * 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US6200651B1 (en) * 1997-06-30 2001-03-13 Lam Research Corporation Method of chemical vapor deposition in a vacuum plasma processor responsive to a pulsed microwave source
US6185839B1 (en) * 1998-05-28 2001-02-13 Applied Materials, Inc. Semiconductor process chamber having improved gas distributor
US6589437B1 (en) * 1999-03-05 2003-07-08 Applied Materials, Inc. Active species control with time-modulated plasma
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US6784108B1 (en) * 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03263827A (ja) * 1990-03-14 1991-11-25 Yasuhiro Horiike デジタルエツチング装置

Also Published As

Publication number Publication date
JP2005502198A (ja) 2005-01-20
CN100462475C (zh) 2009-02-18
US20040195216A1 (en) 2004-10-07
WO2003021002A1 (en) 2003-03-13
CN1549872A (zh) 2004-11-24
US7199328B2 (en) 2007-04-03

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