JP4761748B2 - 高速バリア研磨組成物 - Google Patents

高速バリア研磨組成物 Download PDF

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Publication number
JP4761748B2
JP4761748B2 JP2004279440A JP2004279440A JP4761748B2 JP 4761748 B2 JP4761748 B2 JP 4761748B2 JP 2004279440 A JP2004279440 A JP 2004279440A JP 2004279440 A JP2004279440 A JP 2004279440A JP 4761748 B2 JP4761748 B2 JP 4761748B2
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JP
Japan
Prior art keywords
group
weight
polishing
solution
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004279440A
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English (en)
Japanese (ja)
Other versions
JP2005167199A (ja
JP2005167199A5 (enExample
Inventor
チンル・ビアン
カイ・フー
ヒュー・リ
チェントン・リウ
ジョン・クァンシ
マシュー・アール・ヴァンハネヘム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DuPont Electronic Materials Holding Inc filed Critical DuPont Electronic Materials Holding Inc
Publication of JP2005167199A publication Critical patent/JP2005167199A/ja
Publication of JP2005167199A5 publication Critical patent/JP2005167199A5/ja
Application granted granted Critical
Publication of JP4761748B2 publication Critical patent/JP4761748B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2004279440A 2003-09-25 2004-09-27 高速バリア研磨組成物 Expired - Fee Related JP4761748B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/670,534 2003-09-25
US10/670,534 US7300480B2 (en) 2003-09-25 2003-09-25 High-rate barrier polishing composition

Publications (3)

Publication Number Publication Date
JP2005167199A JP2005167199A (ja) 2005-06-23
JP2005167199A5 JP2005167199A5 (enExample) 2007-11-08
JP4761748B2 true JP4761748B2 (ja) 2011-08-31

Family

ID=34313856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004279440A Expired - Fee Related JP4761748B2 (ja) 2003-09-25 2004-09-27 高速バリア研磨組成物

Country Status (6)

Country Link
US (1) US7300480B2 (enExample)
EP (1) EP1520893B1 (enExample)
JP (1) JP4761748B2 (enExample)
KR (1) KR101109002B1 (enExample)
CN (1) CN100462415C (enExample)
TW (1) TWI354016B (enExample)

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US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US20060205219A1 (en) * 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers
US7842193B2 (en) * 2005-09-29 2010-11-30 Fujifilm Corporation Polishing liquid
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) * 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
US7842192B2 (en) * 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
US7935242B2 (en) * 2006-08-21 2011-05-03 Micron Technology, Inc. Method of selectively removing conductive material
US20080276543A1 (en) * 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
SG183744A1 (en) * 2007-08-20 2012-09-27 Advanced Tech Materials Composition and method for removing ion-implanted photoresist
CN101497765A (zh) * 2008-01-30 2009-08-05 安集微电子（上海）有限公司 一种化学机械抛光液
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2011014840A (ja) * 2009-07-06 2011-01-20 Adeka Corp Ｃｍｐ用研磨組成物
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
MY163071A (en) * 2011-06-29 2017-08-15 Sanyo Chemical Ind Ltd Electronic material polishing liquid
CN102304327A (zh) * 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
SG10201907142VA (en) * 2014-03-18 2019-09-27 Fujifilm Electronic Materials Usa Inc Etching composition
US10683439B2 (en) 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN113913115B (zh) * 2021-10-20 2022-09-06 博力思(天津)电子科技有限公司 一种硅通孔阻挡层碱性抛光液
CN115651543A (zh) * 2022-09-06 2023-01-31 苏州博来纳润电子材料有限公司 一种硅片粗抛光液组合物及其应用
CN118291951B (zh) * 2024-04-08 2025-02-25 合肥安德科铭半导体科技有限公司 一种有机小分子抑制剂及其在薄膜沉积中的应用方法
KR20250166844A (ko) 2024-04-08 2025-11-28 허페이 애드쳄 세미-테크. 코., 엘티디. 유기 소분자 억제제 및 박막 증착에서의 적용방법

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Also Published As

Publication number Publication date
US7300480B2 (en) 2007-11-27
CN1616574A (zh) 2005-05-18
CN100462415C (zh) 2009-02-18
US20050066585A1 (en) 2005-03-31
EP1520893A1 (en) 2005-04-06
TW200514843A (en) 2005-05-01
EP1520893B1 (en) 2011-05-18
KR101109002B1 (ko) 2012-02-08
KR20050030577A (ko) 2005-03-30
JP2005167199A (ja) 2005-06-23
TWI354016B (en) 2011-12-11

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