JP4761748B2 - 高速バリア研磨組成物 - Google Patents

高速バリア研磨組成物 Download PDF

Info

Publication number
JP4761748B2
JP4761748B2 JP2004279440A JP2004279440A JP4761748B2 JP 4761748 B2 JP4761748 B2 JP 4761748B2 JP 2004279440 A JP2004279440 A JP 2004279440A JP 2004279440 A JP2004279440 A JP 2004279440A JP 4761748 B2 JP4761748 B2 JP 4761748B2
Authority
JP
Japan
Prior art keywords
group
weight
polishing
solution
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004279440A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005167199A (ja
JP2005167199A5 (enExample
Inventor
チンル・ビアン
カイ・フー
ヒュー・リ
チェントン・リウ
ジョン・クァンシ
マシュー・アール・ヴァンハネヘム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DuPont Electronic Materials Holding Inc filed Critical DuPont Electronic Materials Holding Inc
Publication of JP2005167199A publication Critical patent/JP2005167199A/ja
Publication of JP2005167199A5 publication Critical patent/JP2005167199A5/ja
Application granted granted Critical
Publication of JP4761748B2 publication Critical patent/JP4761748B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2004279440A 2003-09-25 2004-09-27 高速バリア研磨組成物 Expired - Fee Related JP4761748B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/670,534 2003-09-25
US10/670,534 US7300480B2 (en) 2003-09-25 2003-09-25 High-rate barrier polishing composition

Publications (3)

Publication Number Publication Date
JP2005167199A JP2005167199A (ja) 2005-06-23
JP2005167199A5 JP2005167199A5 (enExample) 2007-11-08
JP4761748B2 true JP4761748B2 (ja) 2011-08-31

Family

ID=34313856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004279440A Expired - Fee Related JP4761748B2 (ja) 2003-09-25 2004-09-27 高速バリア研磨組成物

Country Status (6)

Country Link
US (1) US7300480B2 (enExample)
EP (1) EP1520893B1 (enExample)
JP (1) JP4761748B2 (enExample)
KR (1) KR101109002B1 (enExample)
CN (1) CN100462415C (enExample)
TW (1) TWI354016B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100851451B1 (ko) * 1998-12-25 2008-08-08 히다치 가세고교 가부시끼가이샤 Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 기판의 연마방법
US20050136670A1 (en) * 2003-12-19 2005-06-23 Ameen Joseph G. Compositions and methods for controlled polishing of copper
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution
US7427362B2 (en) * 2005-01-26 2008-09-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Corrosion-resistant barrier polishing solution
US20060205219A1 (en) * 2005-03-08 2006-09-14 Baker Arthur R Iii Compositions and methods for chemical mechanical polishing interlevel dielectric layers
US7842193B2 (en) * 2005-09-29 2010-11-30 Fujifilm Corporation Polishing liquid
US7534753B2 (en) * 2006-01-12 2009-05-19 Air Products And Chemicals, Inc. pH buffered aqueous cleaning composition and method for removing photoresist residue
TW200734436A (en) * 2006-01-30 2007-09-16 Fujifilm Corp Metal-polishing liquid and chemical mechanical polishing method using the same
US20070176142A1 (en) * 2006-01-31 2007-08-02 Fujifilm Corporation Metal- polishing liquid and chemical-mechanical polishing method using the same
US7842192B2 (en) * 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
JP2007214518A (ja) * 2006-02-13 2007-08-23 Fujifilm Corp 金属用研磨液
US7902072B2 (en) * 2006-02-28 2011-03-08 Fujifilm Corporation Metal-polishing composition and chemical-mechanical polishing method
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
US7935242B2 (en) * 2006-08-21 2011-05-03 Micron Technology, Inc. Method of selectively removing conductive material
US20080276543A1 (en) * 2007-05-08 2008-11-13 Thomas Terence M Alkaline barrier polishing slurry
TW200927918A (en) * 2007-08-20 2009-07-01 Advanced Tech Materials Composition and method for removing ion-implanted photoresist
CN101497765A (zh) * 2008-01-30 2009-08-05 安集微电子（上海）有限公司 一种化学机械抛光液
US8071479B2 (en) * 2008-12-11 2011-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
JP2011014840A (ja) * 2009-07-06 2011-01-20 Adeka Corp Ｃｍｐ用研磨組成物
US8431490B2 (en) * 2010-03-31 2013-04-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal
US8568610B2 (en) * 2010-09-20 2013-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
CN103619982B (zh) * 2011-06-29 2015-09-30 三洋化成工业株式会社 研磨液用中和盐、电子材料用研磨液、研磨方法和电子材料的制造方法
CN102304327A (zh) * 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
CN103773244B (zh) * 2012-10-17 2017-08-11 安集微电子（上海）有限公司 一种碱性化学机械抛光液
WO2015142778A1 (en) * 2014-03-18 2015-09-24 Fujifilm Electronic Materials U.S.A., Inc. Etching composition
US10683439B2 (en) 2018-03-15 2020-06-16 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing composition and method of polishing a substrate having enhanced defect inhibition
US11111435B2 (en) * 2018-07-31 2021-09-07 Versum Materials Us, Llc Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
CN113913115B (zh) * 2021-10-20 2022-09-06 博力思(天津)电子科技有限公司 一种硅通孔阻挡层碱性抛光液
CN115651543A (zh) * 2022-09-06 2023-01-31 苏州博来纳润电子材料有限公司 一种硅片粗抛光液组合物及其应用
KR20250166844A (ko) 2024-04-08 2025-11-28 허페이 애드쳄 세미-테크. 코., 엘티디. 유기 소분자 억제제 및 박막 증착에서의 적용방법
CN118291951B (zh) * 2024-04-08 2025-02-25 合肥安德科铭半导体科技有限公司 一种有机小分子抑制剂及其在薄膜沉积中的应用方法

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB679561A (en) 1949-04-07 1952-09-17 Poor & Co Buffing and polishing compositions and method of preparation
JPS5144138B2 (enExample) 1972-08-21 1976-11-26
US5281749A (en) * 1989-11-28 1994-01-25 Henkel Kommanditgesellschaft Auf Aktien Process for reducing the residual content of free alkylating agent in aqeous solutions of amphoteric or zwitterionic surfactants
US5391258A (en) 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5466389A (en) 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
US5860848A (en) 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
WO1996038262A1 (en) 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
US5676587A (en) 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US6001730A (en) 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5985748A (en) 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US20020019202A1 (en) 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6896825B1 (en) 1998-08-31 2005-05-24 Hitachi Chemical Company, Ltd Abrasive liquid for metal and method for polishing
JP4095731B2 (ja) 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
WO2000039844A1 (fr) 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
JP4644323B2 (ja) * 1999-04-28 2011-03-02 Ａｇｃセイミケミカル株式会社 有機アルカリを含有する半導体用研磨剤
TWI227726B (en) * 1999-07-08 2005-02-11 Eternal Chemical Co Ltd Chemical-mechanical abrasive composition and method
CN1107097C (zh) 1999-07-28 2003-04-30 长兴化学工业股份有限公司 化学机械研磨组合物及方法
DE60019142T2 (de) 1999-08-13 2006-02-09 Cabot Microelectronics Corp., Aurora Poliersystem mit stopmittel und verfahren zu seiner verwendung
US7232529B1 (en) 1999-08-26 2007-06-19 Hitachi Chemical Company, Ltd. Polishing compound for chemimechanical polishing and polishing method
JP4505891B2 (ja) * 1999-09-06 2010-07-21 Ｊｓｒ株式会社 半導体装置の製造に用いる化学機械研磨用水系分散体
US6656842B2 (en) 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
EP1094506A3 (en) * 1999-10-18 2004-03-03 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
WO2001060940A1 (en) 2000-02-16 2001-08-23 Rodel Inc Biocides for polishing slurries
US6451697B1 (en) 2000-04-06 2002-09-17 Applied Materials, Inc. Method for abrasive-free metal CMP in passivation domain
US6872329B2 (en) * 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
JP2002050595A (ja) 2000-08-04 2002-02-15 Hitachi Ltd 研磨方法、配線形成方法及び半導体装置の製造方法
JP3816743B2 (ja) * 2000-11-24 2006-08-30 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3825246B2 (ja) * 2000-11-24 2006-09-27 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002231666A (ja) 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
US6485355B1 (en) 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
JP2003023072A (ja) * 2001-07-06 2003-01-24 Hitachi Ltd 半導体装置の製造方法および半導体装置の製造装置
SG144688A1 (en) 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
JP2003068683A (ja) * 2001-08-22 2003-03-07 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US6638326B2 (en) 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
EP1490897B1 (en) 2002-03-25 2007-01-31 Rohm and Haas Electronic Materials CMP Holdings, Inc. Tantalum barrier removal solution
US7300602B2 (en) * 2003-01-23 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier metal polishing solution
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution

Also Published As

Publication number Publication date
TWI354016B (en) 2011-12-11
CN100462415C (zh) 2009-02-18
US7300480B2 (en) 2007-11-27
KR101109002B1 (ko) 2012-02-08
EP1520893B1 (en) 2011-05-18
KR20050030577A (ko) 2005-03-30
CN1616574A (zh) 2005-05-18
JP2005167199A (ja) 2005-06-23
EP1520893A1 (en) 2005-04-06
TW200514843A (en) 2005-05-01
US20050066585A1 (en) 2005-03-31

Similar Documents

Publication Publication Date Title
JP4761748B2 (ja) 高速バリア研磨組成物
US7767581B2 (en) Barrier polishing fluid
JP5032214B2 (ja) 銅／タンタル基体に有用な化学的機械研磨スラリー
JP4681261B2 (ja) 半導体層を研磨するための組成物
JP4261058B2 (ja) 銅／タンタル基体に有用な化学的機械研磨スラリー
US7790618B2 (en) Selective slurry for chemical mechanical polishing
KR101020613B1 (ko) 탄탈 배리어 제거 용액
US20050076579A1 (en) Bicine/tricine containing composition and method for chemical-mechanical planarization
US20070293048A1 (en) Polishing slurry
JP2002506915A (ja) 銅基材に有益な化学機械的研磨スラリー
TW200526770A (en) Compositions and methods for controlled polishing of copper
US20050097825A1 (en) Compositions and methods for a barrier removal
JP2006100835A (ja) ケミカルメカニカルポリッシングのための選択的バリヤスラリー
KR20080004454A (ko) 다작용성 활성화제를 갖는 신규 폴리싱 슬러리 및 마모제무함유 용액
KR100479804B1 (ko) 금속 ｃｍｐ용 연마 슬러리 조성물
KR101095615B1 (ko) Ｃｍｐ 슬러리

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070919

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070919

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101207

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101210

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110106

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110112

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110207

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110307

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110524

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110607

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4761748

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees